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Your search keyword '"Lin, Z.P."' showing total 23 results
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23 results on '"Lin, Z.P."'

19. In VivoOxidation of [13C]Galactose in Patients with Galactose-1-Phosphate Uridyltransferase Deficiency

Author

Berry, G.T., Nissim, I., Mazur, A.T., Elsas, L.J., Singh, R.H., Klein, P.D., Gibson, J.B., Lin, Z.P., and Segal, S.

Abstract

We developed an intravenous and oral [13C]galactose breath test for the in vivostudy of galactose metabolism. Following an intravenous bolus of 7 mg/kg of [1-13C]galactose in the fasting state, normal children and adults eliminated 3-6% and 21-47% of the bolus as 13CO2in expired air collected over 1 and 5 h, respectively, Comparable fractional elimination was seen when the dose was given orally. Patients with galactosemia who have barely detectable or absent galactose-l-phosphate uridyltransferase (GALT) activity in erythrocytes and are homoallelic for the Q188R gene mutation, when given a 7 mg/kg intravenous bolus had barely detectable 13CO2in air samples in the first hour, but eventually eliminated as much as 3.6% of the dose in 5 h. A galactosemia/Duarte (Q188R/N314D) compound heterozygote and a homozygous Duarte subject, as well as a subject with one normal allele and one Q188R allele, showed normal in vivooxidation. An assessment of whole body galactose metabolism can be made with this procedure. Further use of this in vivomodality in patients with different genetic backgrounds should increase our understanding of genotype-phenotype relationships in hereditary galactosemia.

Published
1995
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23. The important features of V Hg-related defects in arsenic-doped HgCdTe

Author

Duan, H., Dong, Y.Z., Lin, Z.P., Huang, Y., Chen, X.S., and Lu, W.

Subjects
*CRYSTAL growth, *POINT defects, *MERCURY, *ARSENIC, *DOPED semiconductors, *CADMIUM telluride, *THERMAL conductivity, *COMPLEX compounds
Abstract

Abstract: The as-grown arsenic-doped HgCdTe typically exhibits compensated n-type conductivity. Based on first-principles calculations, we identify Hg vacancies (V Hg) as a dominant defect species involved in the compensation. Arsenic donor (AsHg) and V Hg acceptor no doubt tend to combine into complex defects but little has been recognized about the features of the complex defects in precious studies. These features outlined in this work enable us to provide a consistent explanation for arsenic activation mechanism proposed by Zandian et al. [] and Berding et al. []. [Copyright &y& Elsevier]

Published
2012
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