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514 results on '"Lin, Y.-M."'

4. Effect of welding sequence on welding-induced-alignment-distortion in packaging of butterfly laser diode modules: Simulation and experiment

Author

Lin, Y M, Eichele, C, and Shi, F G

Subjects
butterfly laser diode package, fiber optic component attachment, finite-element method (FEM), laser welding, packaging yield, welding-induced-alignment-distortion (WIAD), welding sequence
Abstract

Controlling welding-induced-alignment-distortion (WIAD) and maintaining coupling efficiency is obviously the most challenging issue in assembling of fiber-optic components using laser welding. WIAD is the dominant barrier to having high packaging yields. Previous investigation has revealed that the WIAD in butterfly laser diode module packaging could be mitigated by properly choosing weld process parameters such as welding sequence. In this paper, the effect of welding sequence on WIAD is studied numerically by finite-element method (FEM) with a more realistic physics based laser welding model and experimentally by welding prototype butterfly packages. Results from both methods are compared. It is shown that the influence of welding process parameters on WIAD is significant and WIAD control is possible if proper welding sequence is employed.

Published
2005

5. D-Mode GaN HEMT with Direct Drive

Author

Heumesser, V., Lai, J. S., Hsieh, H. C., Hsu, J., Yang, C. Y., Chang, E. Y., Ko, H. K., Liu, W. H., Lin, Y. M., Heumesser, V., Lai, J. S., Hsieh, H. C., Hsu, J., Yang, C. Y., Chang, E. Y., Ko, H. K., Liu, W. H., and Lin, Y. M.

Abstract

A direct-driven gate driver circuit has been developed for the depletion-mode gallium nitride (d-mode GaN) high electron mobility transistor (HEMT), which is a'normally on'' device and is typically connected in series with a low-voltage power MOSFET to prevent shoot-through faults. The switching of such a''cascode'' device is substantially delayed due to a large MOSFET input capacitance. This paper introduces a charge-pump based direct-driven approach to provide a negative voltage in the gate drive loop so that the device becomes 'normally off The switching characteristics of the direct-driven HEMT is analyzed through computer simulation and hardware testing. Results indicate that the switching delays due to MOSFET gating is eliminated, and the voltage slew rate can be directly controlled by the gate resistance.

Published
2023

44. Sustainable polysaccharide-based biomaterial recovered from waste aerobic granular sludge as a surface coating material

Author

Lin, Y. M., Nierop, K.G.J., Girbal-Neuhauser, E., Adriaanse, M., van Loosdrecht, M. C M, Organic geochemistry, Organic geochemistry & molecular biogeology, Organic geochemistry, and Organic geochemistry & molecular biogeology

Subjects
Materials science, Size-exclusion chromatography, Biological wastewater treatment, engineering.material, Polysaccharide, Industrial and Manufacturing Engineering, Coating, Materials Science(all), Amphiphile, Alginate-like exopolysaccharides, General Materials Science, Renewable Energy, Chemical composition, Waste Management and Disposal, Extracellular polymers, chemistry.chemical_classification, Waste management, Sustainability and the Environment, Renewable Energy, Sustainability and the Environment, Biomaterial, Polysaccharide-based biomaterial, Surface coating, chemistry, Chemical engineering, OA-Fund TU Delft, Aerobic granular sludge, engineering, Sewage treatment
Abstract

To evaluate the possibility of utilizing polysaccharide-based biomaterial recovered from aerobic granular sludge as a coating material, the morphology, molecular weight distribution and chemical composition of the recovered biomaterial were investigated by atomic force microscopy, size exclusion chromatography and pyrolysis–GC–MS to have a better understanding of the properties of the biomaterial. The biomaterial recovered from aerobic granular sludge demonstrates chain-like structure. The molecular weight of 1/3 of the biomaterial is higher than 70 kDa. It is amphiphilic due to containing polysaccharides as a major fraction and lipids as a minor fraction. The biomaterial easily forms a film on a hydrophilic surface (e.g. paper), and functions as a water resistant barrier. Biomaterial recovery from waste aerobic granular sludge in biological wastewater treatment process provides a new resource of sustainable materials.

Published
2015
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45. Effect of interfacial layer on the crystal structure of InAs/AlAs0.16Sb0.84/AlSb quantum wells.

Author

Lin, Y. M., Chen, C. H., and Lee, C. P.

Subjects
*ION channels, *X-ray diffraction, *QUANTUM wells, *INDIUM arsenide, *BUFFER layers, *ELECTRON mobility
Abstract

Ion channeling technique using MeV C2+ ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface. [ABSTRACT FROM AUTHOR]

Published
2014
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50. High-speed, high-reliability GaN power device with integrated gate driver

Author

Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, Chen, Jing, Tang, Gaofei, Kwan, M.-H., Zhang, Zhaofu, He, Jiabei, Lei, Jiacheng, Su, R.-Y., Yao, F.-W., Lin, Y.-M., Yu, J.-L., Yang, Thomas, Chern, Chan-Hong, Tsai, Tom, Tuan, H. C., Kalnitsky, Alexander, and Chen, Jing

Abstract

An enhancement-mode GaN power switch with monolithically integrated gate driver is demonstrated on a 650-V GaN-on-Si power device platform. The integrated GaN-based gate driver features advanced designs such as bootstrapped gate-charging current source that enables high current driving capability during the entire turn-on process and rail-to-rail output. The GaN power transistor with integrated gate driver was characterized up to 300 V/15 A switching operations using a double pulse tester, and exhibits suppressed gate ringing and fast switching speed. The peak drain voltage slew rate d V/dt is above 125 V/ns during turn-on, and 336 V/ns during turn-off.

Published
2018

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