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48 results on '"Lin, Song-Sheng"'

15. Preparation and Properties of Ti-TiN-Zr-ZrN Multilayer Films on Titanium Alloy Surface

Author

LIN Song-sheng, ZHOU Ke-song, DAI Ming-jiang, SHI Qian, HU Fang, HOU Hui-jun, WEI Chun-bei, and LIU Jian-wu

Subjects
Ti-TiN-Zr-ZrN multilayer film, titanium alloy, erosion, vacuum cathodic arc deposition, Materials of engineering and construction. Mechanics of materials, TA401-492
Abstract

24 cycles Ti-TiN-Zr-ZrN soft-hard alternating multilayer film was deposited on TC11 titanium alloy by vacuum cathodic arc deposition method. The structure and performance of the multilayer film, especially wear and sand erosion resistance were investigated by various analytical methods including pin on disc wear tester, sand erosion tester, 3D surface topography instrument, scanning electron microscopy (SEM), X-ray diffraction(XRD), micro-hardness tester and scratch adhesion tester. The results indicate that the Vickers-hardness of the multilayer film with thickness of 5.8μm can reach up to 28.10GPa. The adhesive strength of these coatings can be as high as 56N. Wear rate of the multilayer coated alloy is one order of magnitude smaller than bare one, which decreased from 7.06×10-13 m3·N-1·m-1 to 3.03×10-14m3·N-1·m-1. Multilayer films can play the role in hindering the extension of cracks, and thus sand erosion properties of the TC11 titanium alloy substrates are improved.

Published
2017
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27. Effect of oxygen partial pressure on the performance of homojunction amorphous In-Ga-Zn-O thin-film transistors.

Author

Li, Zhi-Yue, Song, Shu-Mei, Wang, Wan-Xia, Gong, Jian-Hong, Tong, Yang, Dai, Ming-Jiang, Lin, Song-Sheng, Yang, Tian-Lin, and Sun, Hui

Subjects
INDIUM gallium zinc oxide, PARTIAL pressure, BAND gaps, TRANSISTORS, MAGNETRON sputtering, THIN films
Abstract

In this study, the homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers and source/drain electrodes were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the phase, microstructure, optical and electrical properties of IGZO thin films was investigated. The results showed that amorphous IGZO thin films always exhibit a high transmittance above 90% and wide band gaps of around 3.9 eV. The resistivity increases as the IGZO thin films are deposited at a higher oxygen partial pressure due to the depletion of oxygen vacancies. In addition, the electrical behaviors in homojunction IGZO TFTs were analyzed. When the active channel layers were deposited with an oxygen partial pressure of 1.96%, the homojunction IGZO TFTs exhibited optimal transfer and output characteristics with a field-effect mobility of 13.68 cm2 Vâˆ'1 sâˆ'1. Its sub-threshold swing, threshold voltage and on/off ratio are 0.6 V/decade, 0.61 V and 107, respectively. [ABSTRACT FROM AUTHOR]

Published
2023
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46. W-Doped DLC Films by IBD and MS

Author

Fu, Zhi Qiang, primary, Wang, Cheng Biao, additional, Wang, Wei, additional, Peng, Zhi Jian, additional, Yu, Xiang, additional, Lin, Song Sheng, additional, and Dai, Ming Jiang, additional

Published
2010
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48. The Optoelectronic Properties of p-Type Cr-Deficient Cu[Cr 0.95-x Mg 0.05 ]O 2 Films Deposited by Reactive Magnetron Sputtering.

Author

Lin SS, Shi Q, Dai MJ, Wang KL, Chen SC, Kuo TY, Liu DG, Song SM, and Sun H

Abstract

CuCrO 2 is one of the most promising p-type transparent conductive oxide (TCO) materials. Its electrical properties can be considerably improved by Mg doping. In this work, Cr-deficient CuCrO 2 thin films were deposited by reactive magnetron sputtering based on 5 at.% Mg doping. The influence of Cr deficiency on the film's optoelectronic properties was investigated. As the film's composition varied, CuO impurity phases appeared in the film. The mixed valency of Cu + /Cu 2+ led to an enhancement of the hybridization between the Cu 3d and O 2p orbitals, which further reduced the localization of the holes by oxygen. As a result, the carrier concentration significantly improved. However, since the impurity phase of CuO introduced more grain boundaries in Cu[Cr 0.95-x Mg 0.05 ]O 2 , impeding the transport of the carrier and incident light in the film, the carrier mobility and the film's transmittance reduced accordingly. In this work, the optimal optoelectronic performance is realized where the film's composition is Cu[Cr 0.78 Mg 0.05 ]O 2 . Its Haacke's figure of merit is about 1.23 × 10 -7 Ω -1 .

Published
2020
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