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192 results on '"Lin, C.F."'

5. Harvesting Solar Energy below Si Bandgap Using Metal-Silicon Junction through Hot Carrier Effect

Author

Chang, C.H., Jhou, J.C., Hsin-Ting, L., and Lin, C.F.

Subjects
New Materials, Devices and Conversion Concepts, Evolving and Emerging Technologies: Tandems, Thin Film absorbers, III-V, New Materials and Concepts, Advanced Modelling
Abstract

8th World Conference on Photovoltaic Energy Conversion; 227-229, Traditional silicon-based solar cells generally can only absorb the solar spectrum with wavelengths below 1.1 microns, and others cannot be absorbed but consumed in the form of heat. In this research, the metal/semiconductor junction is used to break through the limitation of silicon bandgap, and hot carrier effect is applied. The metal thin layer is used to absorb sunlight to generate hot carriers, quickly passing through the energy barrier to generate photocurrent, maximizing the use of solar energy. Compared with conventional silicon solar cells on the market, metal/silicon junction solar cells have better absorption and photovoltaic performance in the infrared regime, expanding the absorption range of silicon-based solar cells, and more effectively utilizing the entire solar spectrum.

Published
2022
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15. Growth and characterizations of GaN on SiC substrates with buffer layers

Author

Lin, C.F., Cheng, H.C., Chi, G.C., Feng, M.S., Guo, J.D., Hong, J. Minghuang, and Chen, C.Y.

Subjects
Gallium nitrate -- Research, Silicon carbide -- Electric properties, Semiconductors -- Research, Physics
Abstract

Low-pressure metalorganic chemical vapor deposition method was used to grow high quality GaN epitaxial layers on 6H-SiC substrates. Samples employing a three-period GaN/Al0.08Ga0.92N (100 angstrom/100 angstrom) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm2/V-s and 1.3X10 (super 17) cubic cm (at 300 K), respectively. Observation on the enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures was also conducted.

Published
1997

22. Phase equilibria in the Pt-In-P system

Author

Lin, C.F., Mohney, S. E., and Chang, Y.A.

Subjects
Phase distortion (Electronics) -- Research, Platinum alloys -- Research, X-ray diffractometer -- Research, X-rays -- Diffraction, Physics
Abstract

The use of electron probe microanalysis and x-ray diffraction facilitates the analysis of phase equilibria in the Pt-In-P system at 725 and 600 degrees centigrade. Three tertiary phases are indicated, and the two binary phases are in agreement with the phase diagrams in literature. A tie-line change from InP-Pt3In7 to In-PtP2 is observed between 600 and 725 degrees centigrade, and the creation of enthalpy of PtP2 is -350 plus or minus 40 kJ per mol.

Published
1993

42. Effect of a solid-state fermentation using Rhizopus oligosporus sp. T-3 on elimination of antinutritional substances and modification of biochemical constituents of defatted rapeseed meal

Author

Bau, H.M., Villaume, C., Lin, C.F., Evrard, J., Quéméner, Bernard, Nicolas, J.P., Mejean, L., ProdInra, Migration, Laboratoire de biochimie et technologie des glucides, and Institut National de la Recherche Agronomique (INRA)

Subjects
[SDV.IDA]Life Sciences [q-bio]/Food engineering, [SDV.IDA] Life Sciences [q-bio]/Food engineering, COLZA
Published
1994

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