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Nova Her 2021 was observed with TESS 12.62 days after its most recent outburst in June 12.537 2021. This cataclysmic variable belongs to the intermediate polar class, with an spin period of $\sim$501 s and orbital period of 0.1529 days. During TESS observations of Sector 40, the orbital period of 0.1529(1) days is detected significantly 17 days after the onset of the outburst. A modulation, of unknown origin, with a period of $\sim$0.537 days is present in the data from day 13 until day 17., Comment: Presented on the 65th Meeting of the Asociacion Argentina de Astronomia in September 2023. Will be submitted to the BAAA soon

Astrometric studies and orbital modeling of planetary moons have contributed significantly to advancing our understanding of their orbital dynamics. These studies require precise positions measured over extended periods. In this paper, we present the results of the 2021 Brazilian Jovian mutual phenomena campaign. The data correspond to eight events between Galilean satellites, in addition to a rare eclipse of Thebe, an inner satellite, totaling nine events. A geometric model along with the DE440/JUP365 ephemerides was used to reproduce the events and simulate the light curves. A Monte Carlo method and chi-squared statistics were used to fit the simulated light curves to the observations. The reflectance model adopted for our simulations was the complete version of the Oren-Nayer model. The average uncertainty of the relative positions of the Galilean satellites was 5 mas (15 km) and for the inner Thebe satellite 32 mas (96 km). The seven mutual events (nine independent observations) here analyzed represent and addition of 17% events (10% light curves) with respect to the PHEMU21 international campaign. Furthermore, our result of Thebe eclipse is only the second measurement published to date. Our results contribute to the ephemeris database, being fundamental to improving satellite orbits and thus minimizing their uncertainties., Comment: 10 pages, 5 figures

As a natural continuation of study $LCM$-groups, we explore other properties of $LCM$-groups and $LC$-series. We obtain some characterizations of finite groups which are not LCM-groups but all proper sections are $LCM$-groups. Also, for a $p$-group $G$, we prove that $G$ is a $LC$-nilpotent group and we obtain a bound for its $LC$-nilpotency. Finally, as an application, we prove that a finite supersolvable group, groups of order $pq, pq^2$ and $pqr$ are $LC$-nilpotent groups, where $p,q$ and $r$ are prime numbers.

SW Sextantis systems are nova-like cataclysmic variables that have unusual spectroscopic properties, which are thought to be caused by an accretion geometry having part of the mass flux trajectory out of the orbital plane. Accretion onto a magnetic white dwarf is one of the proposed scenarios for these systems. To verify this possibility, we analysed photometric and polarimetric time-series data for a sample of six SW Sex stars. We report possible modulated circular polarization in BO Cet, SW Sex, and UU Aqr with periods of 11.1, 41.2 and 25.7 min, respectively, and less significant periodicities for V380 Oph at 22 min and V442 Oph at 19.4 min. We confirm previous results that LS Peg shows variable circular polarization. However, we determine a period of 18.8 min, which is different from the earlier reported value. We interpret these periods as the spin periods of the white dwarfs. Our polarimetric results indicate that 15% of the SW Sex systems have direct evidence of magnetic accretion. We also discuss SW Sex objects within the perspective of being magnetic systems, considering the latest findings about cataclysmic variables demography, formation and evolution., Comment: 29 pages, 17 figures

Let $G$ be a periodic group, and let $LCM(G)$ be the set of all $x\in G$ such that $o(x^nz)$ divides the least common multiple of $o(x^n)$ and $o(z)$ for all $z$ in $G$ and all integers $n$. In this paper, we prove that the subgroup generated by $LCM(G)$ is a locally nilpotent characteristic subgroup of $G$ whenever $G$ is a locally finite group. For $x,y\in G$ the vertex $x$ is connected to vertex $y$ whenever $o(xy)$ divides the least common multiple of $o(x)$ and $o(y)$. Let $Deg(G)$ be the sum of all $deg(g)$ where $g$ runs over $G$. We prove that for any finite group $G$ with $h(G)$ conjugacy classes, $Deg(G)=|G|(h(G)+1)$ if and only if $G$ is an abelian group., Comment: 21 pages

We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material.

The interplay between disorder and spin polarization in a GaMnAs thin layer results into spin-polarized impurity hole bands. A figure of merit is defined to label the hole state as being extended or localized. The calculation leads to a phase diagram determining the metallic or non-metallic character of the sample. It is shown that samples with the highest figures of merit have a ratio between the extended hole density and the Mn concentration near 0.2, in agreement with the ratio of 0.1-0.25 known to occur among samples produced with the highest Curie temperatures. Both the non-metal-to-metal and the metal-to-non-metal transitions experimentally observed in the ferromagnetic regime are obtained, as the Mn concentration increases. An explanation is given for the occurrence of a maximal Curie temperature in ferromagnetic GaMnAs samples., Comment: 4 figures. Text changed and references added. Journal-ref added

A self-consistent calculation of the density of states and the spectral density function is performed in a two-dimensional spin-polarized hole system based on a multiple-scattering approximation. Using parameters corresponding to GaMnAs thin layers, a wide range of Mn concentrations and hole densities have been explored to understand the nature, localized or extended, of the spin-polarized holes at the Fermi level for several values of the average magnetization of the Mn ystem. We show that, for a certain interval of Mn and hole densities, an increase on the magnetic order of the Mn ions come together with a change of the nature of the states at the Fermi level. This fact provides a delocalization of spin-polarized extended states anti-aligned to the average Mn magnetization, and a higher spin-polarization of the hole gas. These results are consistent with the occurrence of ferromagnetism with relatively high transition temperatures observed in some thin film samples and multilayered structures of this material., Comment: 3 pages

Aiming at the optimization of the spin diffusion length in (001) GaAs quantum wells, we explore the effect of the anisotropy of the spin-orbit coupling on the competition between the Rashba and the Dresselhaus spin-orbit couplings by solving the kinetic spin Bloch equations with the electron-phonon and the electron-electron scattering explicitly included. For identical strengths of the Rashba and the Dresselhaus spin-orbit couplings, the spin diffusion length shows strong anisotropy not only for the spin polarization direction but also for the spin diffusion direction. Two special directions are used seeking for the large diffusion length: ($\bar{1}$10) and (110). Without the cubic term of the Dresselhaus spin-orbit coupling and with the identical Dresselhaus and Rashba strengths, infinite diffusion lengths can be obtained {\em either} for the spin diffusion/injection direction along $(\bar110)$, regardless of the direction of spin polarization, {\em or} for the spin polarization along $(110)$, regardless of the direction of the spin diffusion/injection. However, the cubic Dresselhaus term cannot be neglected, resulting into a finite spin diffusion length which decreases with the temperature and the electron density, and of which the anisotropy for the spin diffusion direction and spin polarization direction is maintained. For the spin diffusion/injection direction along ($\bar{1}$10), the spin diffusion length increases first with the increase of the Rashba strength (from 0) which can be tuned by the external gate voltage; when the Rashba strength is slightly smaller than (in stead of equal to) the Dresselhaus strength, the diffusion length reaches its maximum; and then it decreases with the Rashba strength., Comment: 8 pages, 5 figures, to be published in PRB.

We investigate the spin relaxation and spin dephasing of $n$-type GaAs quantum wells. We obtain the spin relaxation time $T_1$, the spin dephasing time $T_2$ and the ensemble spin dephasing time $T_2^{\ast}$ by solving the full microscopic kinetic spin Bloch equations, and we show that, analogous to the common sense in an isotropic system for conduction electrons, $T_1$, $T_2$ and $T_2^{\ast}$ are identical due to the short correlation time. The inhomogeneous broadening induced by the D'yakonov-Perel term is suppressed by the scattering, especially the Coulomb scattering, in this system., Comment: 4 pages, 2 figures, to be published in Phys. Lett. A

The occurrence of inhomogeneous spin-density distribution in multilayered ferromagnetic diluted magnetic semiconductor nanostructures leads to strong dependence of the spin-polarized transport properties on these systems. The spin-dependent mobility, conductivity and resistivity in (Ga,Mn)As/GaAs,(Ga,Mn)N/GaN, and (Si,Mn)/Si multilayers are calculated as a function of temperature, scaled by the average magnetization of the diluted magnetic semiconductor layers. An increase of the resistivity near the transition temperature is obtained. We observed that the spin-polarized transport properties changes strongly among the three materials., Comment: 3 pages, 4 figures

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic interaction between holes and the localized moment on the Mn(++) sites. Our calculation shows the distribution of heavy holes and light holes in the structure. A strong spin-polarization is observed, and the charge is concentrated mostly on the GaMnAs layers, due to heavy and light holes with their total angular momentum aligned anti-parallel to the average magnetization. The charge and spin distributions are analyzed in terms of their dependence on the number of multilayers, the widths of the GaMnAs and GaAs layers, and the width of lateral GaAs layers at the borders of the structure., Comment: 12 pages,7 figures

The magnetic order resulting from an indirect exchange between magnetic moments provided by spin-polarized hole gas in the metallic phase of a GaMnAs double layer structure is studied via Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas due to the existence of an average magnetization in the magnetic layers, establishing, in this way, a self-consistency between the magnetic order and the electronic structure. That interaction leads to an internal ferromagnetic order inside each layer, and a parallel arrangement between their magnetizations, even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions., Comment: 17 pages and 14 figures

The magnetic order resulting from an indirect exchange between magnetic moments in the metallic phase of a Ga(1-x)Mn(x)As bilayered structure is studied "via" Monte Carlo simulation. The coupling mechanism involves a perturbative calculation in second order of the interaction between the magnetic moments and carriers (holes). We take into account a possible polarization of the hole gas establishing, thus, self-consistency between the magnetic order and the electronic structure. It leads to a ferromagnetic order even in the case of thin layers. This fact is analyzed in terms of the inter- and intra-layer interactions., Comment: 3 pages

The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments., Comment: 3 pages, 3 figures

The frictional drag force between separated but coupled two-dimensional electron gases of different temperatures is studied using the non-equilibrium Green function method based on the separation of center-of-mass and relative dynamics of electrons. As the mechanisms of producing the frictional force we include the direct Coulomb interaction, the interaction mediated via virtual and real TA and LA phonons, optic phonons, plasmons, and TA and LA phonon-electron collective modes. We found that, when the distance between the two electron gases is large, and at intermediate temperature where plasmons and collective modes play the most important role in the frictional drag, the possibility of having a temperature difference between two subsystems modifies greatly the transresistivity., Comment: 8figures

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory., Comment: 4 pages

The magnetic order resulting from a confinement-adapted Ruderman-Kittel-Kasuya-Yosida indirect exchange between magnetic moments in the metallic phase of a AlAs/Ga(1-x)Mn(x)As quantum well is studied by Monte Carlo simulation. This coupling mechanism involves magnetic moments and carriers (holes), both coming from the same Mn(2+) ions. It leads to a paramagnetic, a ferromagnetic, or a canted spin phase, depending on the carrier concentration, and on the magnetic layer width. It is shown that high transition temperatures may be obtained., Comment: 7 figures

The magnetic order in the diluted magnetic semiconductor barrier of double AlAs/GaAs: Mn quantum well structures is investigated by Monte Carlo simulations. A confinement adapted RKKY mechanism is implemented for indirect exchange between Mn ions mediated by holes. It is shown that, depending on the barrier width and the hole concentration a ferromagnetic or a spin-glass order can be established., Comment: 3 figures

The optic vibrational (confined and interface) modes and the electron-phonon and hole-phonon interactions are obtained, in the dielectric continuum model, for two diluted magnetic semiconductor structures: a single well of Cd1-xMnxTe/Cd1-yMgyTe with the magnetic ions in the well, and a double well of CdTe/Cd1-xMnxTe, in which a thin layer of the magnetic material is grown in the middle of the structure. The scattering rates for the intra- and the inter-subband transitions are obtained for electrons and holes., Comment: 8 pages, 6 figures