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Structural and dielectric thermal stability in (1− 2x)Na0.5Bi0.5TiO3 (NBT)–xBaTiO3 (BT)-xBiScO3 (BS) for x = 0.01, 0.03, 0.05, 0.07, and 0.09 lead-free ceramics were first investigated. X-ray diffraction studies revealed composition-driven phase transitions in NBT–BT–BS ceramics, wherein the crystal structure changed from rhombohedral to a mixed phase of cubic and tetragonal with increasing x. Dielectric measurements showed a low-temperature dielectric dispersion and a high-temperature dielectric maxima for all the ceramic samples. This was attributed to the presence of two types of polar nano region (PNR), such as low-temperature PNRs and high-temperature PNRs. The composition of x = 0.05 exhibited a relatively high permittivity of 3250 at 250 °C (10 kHz) maintaining thermal stability varying no more than ± 15% from temperature range of 168 to 400 °C. These results suggest that the addition of BT–BS to the NBT ceramics can also be suitable candidates for high-temperature capacitor applications. [ABSTRACT FROM AUTHOR]

Background and Purpose: Chitinase‐3‐like 1 (CHI3L1) causes skin inflammation in the progression of atopic dermatitis. We investigated if anti‐CHI3L1 antibody could prevent the development of atopic dermatitis and its mechanisms of action. Experimental Approach: The effect of CHI3L1 antibody on phthalic anhydride‐induced atopic dermatitis animal model and in vitro reconstructed human skin (RHS) model were investigated. Expression and release of atopic dermatitis‐related cytokines were determined using an enzyme‐linked immunosorbent assay, and RT‐qPCR, STAT3 and CXCL8 signalling were measured by western blotting. Key Results: Anti‐CHI3L1 antibody suppressed phthalic anhydride‐induced epidermal thickening, clinical score, IgE level and infiltration of inflammatory cells, and reduced phthalic anhydride‐induced inflammatory cytokines concentration. In addition, CHI3L1 antibody treatment inhibited the expression of STAT3 activity in phthalic anhydride‐treated skin. It was also confirmed that CHI3L1 antibody treatment alleviated atopic dermatitis‐related inflammation in the RHS model. The inhibitory effects of CHI3L1 antibody was similar or more effective compared with that of the IL‐4 antibody. We further found that CHI3L1 is associated with CXCL8 by protein‐association network analysis. siRNA of CHI3L1 blocked the mRNA levels of CHI3L1, IL‐1β, IL‐4, CXCL8, TSLP, and the expression of CHI3L1 and p‐STAT, and the level of CXCL8, whereas recombinant level of CXCL8 was elevated. Moreover, siRNA of STAT3 reduced the mRNA level of these cytokines. CHI3L1 and p‐STAT3 expression correlated with the reduced CXCL8 level in the RHS in vitro model. Conclusion and Implications: Our data demonstrated that CHI3L1 antibody could be a promising effective therapeutic drug for atopic dermatitis. [ABSTRACT FROM AUTHOR]

We report the growth of large-scale, single-oriented zinc oxide (ZnO) nanowall networks on epitaxial hexagonal boron nitride (h-BN) films and their application to flexible inorganic ultraviolet (UV) light sensors. Using catalyst-free metal-organic vapor phase epitaxy, ZnO nanowall networks with good vertical alignment are grown on epitaxial h-BN films. The single-oriented crystal structure of the ZnO nanostructures on h-BN is investigated using x-ray diffraction (XRD) spectroscopy, and the heteroepitaxial relationship between ZnO and h-BN is revealed through synchrotron radiation XRD. Interestingly, when utilizing the grown ZnO nanostructure as a channel for UV sensors, better performance merits such as a high IUV/Idark ratio, faster recovery time, and low dark current are achieved if h-BN is employed as a growth template. As an example of inorganic flexible optoelectronic device applications, flexible UV sensors are fabricated using ZnO/h-BN heterostructures owing to the insulating and transferrable nature of h-BN substrates. The sensor maintained an excellent performance, even under highly bent conditions. [ABSTRACT FROM AUTHOR]

We present site-dependent Sb-doping effects and optical phonon scattering-limited charge transport properties in a layered chalcogenide SnSe2. It was found that a group V element Sb acts as an electron acceptor at the cation site of Sn and as an electron donor at the anion site of Se in SnSe2 compounds. This phenomenon could be interpreted successfully by analyzing Bader atomic net charge, which is strongly affected by the difference of electronegativity between the elements. The charge transport mechanism in SnSe2, which had been controversial, was found to be optical phonon scattering with T−5/2-dependence, and the bandgap was measured to be ∼1.0 eV. [ABSTRACT FROM AUTHOR]