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Controllable spin-orbit torque based nonvolatile memory is highly desired for constructing energy efficient reconfigurable logic-in-memory computing suitable for emerging data-intensive applications. Here, we report our exploration of the IrMn/Co/Ru/CoPt/CoO heterojunction as a potential candidate for applications in both multistate memory and programmable spin logic. The studied heterojunction can be programmed into four different magnetic configurations at will by tuning both the in-plane exchange bias at the interface of IrMn and Co layers and the out-of-plane exchange bias at the interface of CoPt and CoO layers. Moreover, on the basis of the controllable exchange bias effect, 10 states of nonvolatile memory and multiple logic-in-memory functions have been demonstrated. Our findings indicate that IrMn/Co/Ru/CoPt/CoO multilayered structures can be used as a building block for next-generation logic-in-memory and multifunctional multidimensional spintronic devices.

The preparation of two-dimensional magnetic materials is a key process to their applications and the study of their structure and morphology plays an important role in the growth of high-quality thin films. Here, the growth, structure, and morphology of Cr1+δTe2 films grown by molecular beam epitaxy on mica with variations of Te/Cr flux ratio, growth temperature, and film thickness have been systematically investigated by scanning tunneling microscopy, reflection high-energy electron diffraction, scanning electron microscope, and X-ray photoelectron spectroscopy. We find that a structural change from multiple phases to a single phase occurs with the increase in growth temperature, irrespective of the Cr/Te flux ratios, which is attributed to the desorption difference of Te atoms at different temperatures, and that the surface morphology of the films grown at relatively high growth temperatures (≥ 300 °C) exhibits a quasi-hexagonal mesh-like structure, which consists of nano-islands with bending surface induced by the screw dislocations, as well as that the films would undergo a growth-mode change from 2D at the initial stage in a small film thickness (2 nm) to 3D at the later stage in thick thicknesses (12 nm and 24 nm). This work provides a general model for the study of pseudo-layered materials grown on flexible layered substrates.

Preparation of atomic reconstructions and tracking its dynamic-evolutionary pathways for some polar surfaces of ionic crystals are essential in surface science but remain a formidable challenge. Mainly by scanning tunneling microscopy, we investigate various reconstructions as well as their dynamic-evolutionary pathways on ZnO(0001) surface as a prototypical ionic crystal, which have been successfully prepared by introducing Ga surface segregation. We observe three complex pathways from an initial disorder to finally well-ordered surface with (2×8) reconstruction undergoing complicated atom desorption, missing and moving dynamic processes, one of which is “disorder → [disorder + (√3 × √3)R30°] → [(2 × 2)] → zigzag arrangement → [(2 × 8)]”. The atomic reconstructions are proposed to originate from the modification of empty states of dangling bonds of the surface by surface segregation. Our findings provide a general model for preparing plentifully atomic reconstructions and revealing dynamic-evolutionary pathways on complex polar surfaces of ionic crystals.

Signaling proteins are composed of conserved protein interaction domains that serve as allosteric regulatory elements of enzymatic or binding activities. The ubiquitous, structurally conserved cyclic nucleotide binding (CNB) domain is found covalently linked to proteins with diverse folds that perform multiple biological functions. Given that the structures of cAMP-bound CNB domains in different proteins are very similar, it remains a challenge to determine how this domain allosterically regulates such diverse protein functions and folds. Instead of a structural perspective, we focus our attention on the energy landscapes underlying the CNB domains and their responses to cAMP binding. We show that optical tweezers is an ideal tool to investigate how cAMP binding coupled to interdomain interactions remodel the energy landscape of the regulatory subunit of protein kinase A (PKA), which harbors two CNB domains. We mechanically manipulate and probe the unfolding and refolding behavior of the CNB domains as isolated structures or selectively as part of the PKA regulatory subunit, and in the presence and absence of cAMP. Optical tweezers allows us to dissect the changes in the energy landscape associated with cAMP binding, and to examine the allosteric interdomain interactions triggered by the cyclic nucleotide. This single molecule approach can be used to study other modular, multidomain signaling proteins found in nature.

Via exploring the spin dynamics and transport properties at interfaces of magnetic material/non-magnetic metal bilayers, spintronics advanced many techniques on generation, detection, and manipulation of spin currents, which laid down a foundation for designing spintronic devices. New ideas and methods for manipulating spin are required in the spintronics community. Merging with cavity quantum electrodynamics, magnetic resonance in ferromagnets inside of a microwave cavity, realizes a strong magnon-microwave coupling at room temperature, opening an avenue to manipulate spin and spin current for the spintronics community. Spin-microwave coupling strength was significantly improved by replacing a few spins in a paramagnetic spin system with magnetization in ferromagnetic materials. Thus, a strongly coupled magnon-microwave system offers a hybrid quantum platform with many measures to tune the coupled system, such as an exchange magnetic field, an anisotropy field, controlled coupling strength, controlled damping parameters, and so on. Many devices were proposed and demonstrated with potential applications. In this review, we briefly introduce the concept and mechanism of magnon-microwave coupling, a classical electrodynamical coupling model for the coupling, spin currents produced by the coupled magnon, and manipulation of the spin current via the strong coupling. In ferromagnets, magnons can couple to a microwave mode as a magnon-polariton propagating in the materials. The strongly coupled magnon-microwave system is a magnon-polariton in a cavity where the microwave was confined as a resonance mode with a high quality factor. Using the Landau-Lifshitz-Gilbert equation and Maxwell equations, we introduce the classical electrodynamical coupling model and reveal that the magnon is driven by a torque produced by the microwave magnetic field on the magnetization and the microwave is feedback via Faraday’s law. Therefore, the coupling strength of the magnon-microwave system can be controlled by changing the torque. Magnon-microwave coupling is experimentally studied using many techniques, such as microwave transmission, Brillouin light scattering, Faraday rotation measurement, and spin pumping electrical detection. Spin pumping is well explored in the spintronics community as a spin current produced by magnon and detected as a voltage via inverse spin Hall effect in a novel metal. Combining with microwave transmission of the coupled microwave subsystem, spin pumping electrical detection by directly detecting the spin current produced by the magnon subsystem in the coupled system, illustrates a more complete profile of the coupled magnon-microwave system. In addition, the strongly coupled magnon-microwave system offers a new technique to manipulate spin currents. We experimentally demonstrate that spin currents produced by the strongly coupled system are correlated with each other mediated by the microwave cavity, and can be manipulated remotely. Two almost identical magnet samples are used to couple to a cavity and the coupling strengths between each magnet and the cavity are tunable individually. By using electrical detection to locally detect each magnet sample respectively, we find that the spin currents produced by two magnet samples are coherently correlated. By tuning the coupling strength of one magnet sample to the cavity, the spin current produced by the second magnet sample is manipulated distantly over a few centimeters, which is far longer than the distance of spin-orbit interaction or exchange interaction. This distant control is only limited by the coherence length of the microwave and the dimension of the cavity. This flexibility opens the door to improve spin current generation and manipulation for cavity spintronic devices.

Cyclic-nucleotide binding (CNB) domains are structurally and evolutionarily conserved signaling modules that regulate proteins with diverse folds and functions. Despite a wealth of structural information, the mechanisms by which CNB domains couple cyclic-nucleotide binding to conformational changes involved in signal transduction remain unknown. Here we combined single-molecule and computational approaches to investigate the conformation and folding energetics of the two CNB domains of the regulatory subunit of protein kinase A (PKA). We found that the CNB domains exhibit different conformational and folding signatures in the apo state, when bound to cAMP, or when bound to the PKA catalytic subunit, underscoring their ability to adapt to different binding partners. Moreover, we show while the two CNB domains have near-identical structures, their thermodynamic coupling signatures are divergent, leading to distinct cAMP responses and differential mutational effects. Specifically, we demonstrate mutation W260A exerts local and allosteric effects that impact multiple steps of the PKA activation cycle. Taken together, these results highlight the complex interplay between folding energetics, conformational dynamics, and thermodynamic signatures that underlies structurally conserved signaling modules in response to ligand binding and mutational effects.

A simple, reliable, and self-switchable spin-orbit torque (SOT)-induced magnetization switching in a ferromagnetic single layer is needed for the development of next generation fully electrical controllable spintronic devices. In this work, field-free SOT-induced magnetization switching in a CoPt single layer is realized by broken multiple inversion symmetry through simultaneously introducing both oblique sputtering and a vertical composition gradient. A quantitative analysis indicates that multiple inversion asymmetries can produce dynamical bias fields along both

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Novel spintronic devices with low power consumption, nonvolatility, and high storage density are highly desired to meet the rapid development of modern information storage and communication technology, which poses a great challenge to both material and device researches. To overcome this challenge, our group has focused our research on the following two aspects. On one hand, we have explored novel magnetoresistance effects in a variety of materials and devices, aiming to get a deep understanding about the spin dependent transport and obtain an effective control of spin-dependent transport. On the other hand, we have tried to control the magnetoresistance based on multi-physical field effects, aiming to obtain spintronic prototype devices that can be used for multi-state data storage. Regarding the novel magnetoresistance explorations, this article will introduce: (1) The negative magnetoresistance in amorphous condensed magnetic semiconductors. The spin dependent variable range hopping model is proposed, which can quantitatively explain the temperature and magnetic field dependent transport behavior in the condensed magnetic semiconductors. In addition, this model provides an alternative way to detect the spin polarization ratio of the magnetic semiconductors. (2) The positive magnetoresistance in single-crystal CoZnO magnetic semiconductors. By quantitative analysis of the transport properties of CoZnO films, it is observed that the positive magnetoresistance in the “hard gap” regime is the result of the carrier wavefunction shrinkage under applied magnetic field. (3) The rectification magnetoresistance in non-magnetic Schottky heterojunctions and the tunneling rectification magnetoresistance in magnetic tunnel junctions. A brand new rectification magnetoresistance is observed in nonmagnetic Al/Ge Schottky heterojunctions: The application of a pure small sinusoidal alternating current to the nonmagnetic Schottky heterojunctions can generate a significant direct-current voltage, and this rectification voltage strongly varies with the external magnetic field. Moreover, by using CoO-ZnO composite tunneling barrier, the charge-related rectification and spin-dependent tunneling magnetoresistance are integrated into the Co/CoO-ZnO/Co magnetic tunneling junctions to realize the tunneling rectification magnetoresistance. The observation of rectification magnetoresistance and tunneling rectification magnetoresistance not only adds new members to the magnetoresistance family, but also provides a promising way to control the devices’ properties by using alternating current. In terms of multistate data storage application, this review will introduce: (1) The electrical and magnetic field controllable 4 resistance states in oxide heterojunctions. In Co/CoO-ZnO/Co magnetic tunneling junctions, by integrating the electrical field induced resistance switching and the magnetic field induced tunneling magnetoresistance effects, four nonvolatile resistance states are demonstrated. (2) The remanent magnetization controllable 10 resistance states in magnetic heterojunctions. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. (3) The spin-orbit torque controllable 10 resistance states in single-layer magnetic alloy. A repeatable bulk spin-orbit torque switching of the perpendicularly magnetized CoPt alloy single-layer films is realized by introducing a composition gradient in the thickness direction to break the inversion symmetry. Moreover, a ten states nonvolatile memory is illustrated solely by changing the electrical current to control the multi-domain states of the CoPt alloy.

Material functionalities strongly depend on the stoichiometry, crystal structure, and homogeneity. Here we demonstrate an approach of amorphous nonstoichiometric inhomogeneous oxides to realize tunable ferromagnetism and electrical transport at room temperature. In order to verify the origin of the ferromagnetism, we employed a series of structural, chemical, and electronic state characterizations. Combined with electron microscopy and transport measurements, synchrotron-based grazing incident wide angle X-ray scattering, soft X-ray absorption and circular dichroism clearly reveal that the room-temperature ferromagnetism originates from the In0.23Co0.77O1−v amorphous phase with a large tunable range of oxygen vacancies. The room-temperature ferromagnetism is tunable from a high saturation magnetization of 500 emu cm−3 to below 25 emu cm−3, with the evolving electrical resistivity from 5 × 103 μΩ cm to above 2.5 × 105 μΩ cm. Inhomogeneous nano-crystallization emerges with decreasing oxygen vacancies, driving the system towards non-ferromagnetism and insulating regime. Our work unfolds the novel functionalities of amorphous nonstoichiometric inhomogeneous oxides, which opens up new opportunities for developing spintronic materials with superior magnetic and transport properties.

How to electrically control magnetic properties of a magnetic material is promising towards spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their zero net magnetization. In this work, we found electron doping dependent variation of magnetic orders of a two-dimensional (2D) AFM insulator NiPS3, where doping concentration is tuned by intercalating various organic cations into the van der Waals gaps of NiPS3 without introduction of defects and impurity phases. The doped NiPS3 shows an AFM-ferrimagnetic (FIM) transition at doping level of 0.2-0.5 electrons/cell and a FIM-AFM transition at doping level of >= 0.6 electrons/cell. We propose that the found phenomenon is due to competition between Stoner exchange dominated inter-chain ferromagnetic order and super-exchange dominated inter-chain AFM order at different doping level. Our studies provide a viable way to exploit correlation between electronic structures and magnetic properties of 2D magnetic materials for realization of magnetoelectric effect., 18 pages, 7 figures

A simple, reliable, and electrically controllable way to develop complementary spin–orbit logic devices is highly desired. In this work, controllable field-free spin–orbit torque (SOT) switching is demonstrated in the Pt/IrMn/Co/Ru/CoPt/CoO/MgO heterojunction at room temperature, which makes it an attractive building block for complementary spin logic. By applying current pulses along two orthogonal directions, both the in-plane exchange bias at the IrMn/Co interface and the perpendicular magnetization switching of the CoPt layer can be well controlled. Using this controllable SOT switching, multiple spin logic operations and a spin logic half-adder are obtained. These results indicate that controllable SOT switching could provide a potentially applicable way toward efficient spin logic and in-memory computing devices.

Voltage control of magnetic properties is a promising path to realize low-power spintronic devices and meets the requirements for quicker information processing speed and ongoing scale reduction. Hydrogen migration induced by voltage gating has been demonstrated to modify the intrinsic magnetic properties of materials by affecting the exchange interaction, electron occupancy, and magnetoelastic effect. Herein, the magnetic properties of a ferrimagnetic Gd29Fe71 film in an all-solid-state multilayer device, which is constructed using a GdOx electrolyte, can be reversibly modulated by voltage-controlled hydrogen migration. Polar MOKE results indicate that hydrogen intercalation/deintercalation can modulate the Gd29Fe71 film's degree of compensation and control the dominant magnetic sublattice. Furthermore, the polarity of the polar MOKE curves can be reversibly switched. As with the increase in hydrogen loading, the compensation point in the Gd29Fe71 film is approached, the density of magnetic domain nucleation sites decreases, and the magnetic domain structures transform from labyrinth domains to uniform large area domains. At the same time, a strong perpendicular magnetic anisotropy is developed. This work shows a possible pathway for reversible control of magnetism in spintronic devices.

Controllable manipulation of specific spin configurations of magnetic materials is the key to constructing functional spintronic devices. Here, it is demonstrated by integrating the merits of ferromagnetic, ferrimagnetic, and antiferromagnetic spin configurations into one synthetic antiferromagnetic (SAF) heterostructure by controlling both long-range oscillatory interlayer coupling and neighboring ferrimagnetic coupling. A controllable manipulation of four types of spin configurations of the Pt/[Co/Pt/Co]/Ru/CoTb SAF heterostructures composed of ferromagnetic Co/Pt/Co and ferrimagnetic CoTb layers is successfully achieved. In particular, the compensated magnetization, enhanced anomalous Hall resistance in the remanence state, wide-temperature spin-orbit torque switching of magnetization, and high immunity to the external magnetic field are simultaneously obtained in one of the SAF heterojunctions with macroscopic interlayer antiferromagnetic coupling. This design concept of engineering spin configurations may enable efficient spin manipulation for customized memory and logic applications.