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Organic electronics (OE) such as organic light-emitting diodes or organic solar cells represent an important and innovative research area to achieve global goals like environmentally friendly energy production. To accelerate OE material discovery, various computational methods are employed. For the initial generation of structures, a molecular cluster approach is employed. Here, we present a semi-automated workflow for the generation of monolayers and aggregates using the GFNn-xTB methods and composite density functional theory (DFT-3c). Furthermore, we present the novel D11A8MERO dye interaction energy benchmark with high-level coupled cluster reference interaction energies for the assessment of efficient quantum chemical and force-field methods. GFN2-xTB performs similar to low-cost DFT, reaching DFT/mGGA accuracy at two orders of magnitude lower computational cost. As an example application, we investigate the influence of the dye aggregate size on the optical and electrical properties and show that at least four molecules in a cluster model are needed for a qualitatively reasonable description. [ABSTRACT FROM AUTHOR]

Integration of photonic crystal (PhC) configurations onto the surfaces of light-emitting diodes (LEDs) can play an important role in enhancing light extraction efficiency. While the literature is rich with various PhC fabrication approaches, there is a need for high throughput methods that are appropriate for low-cost devices. In this paper, we report the use of single pulse laser interference lithography (LIL) for the fabrication of photonic crystal structures on LEDs. The use of brief nanosecond pulse exposures offers significant benefits for high-throughput production. In our study, we have applied single pulse LIL on GaAs/AlGaAs LED structures to achieve high-quality photoresist arrays and then have used inductively coupled plasma etching to create nanoholes into the epitaxial structure. The resulting array forms an effective PhC, controlling surface transmission. Electroluminescence (EL) analyses confirm that these structures enhance the average EL intensity of the LED by up to 3.5 times at room temperature. This empirical evidence underscores the efficacy and potential of this fabrication approach in advancing the functional capabilities of semiconductor-based light-emitting devices. [ABSTRACT FROM AUTHOR]

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects. [ABSTRACT FROM AUTHOR]

Temperature-dependent piezoelectric-field characteristics of GaInN/GaN blue quantum wells are experimentally investigated between 100 and 300 K. The results show that the magnitude of the piezoelectric field increases with decreasing temperature with a slope of 1.08 kV cm−1 K−1 due to the increase in a mismatch between thermal expansion coefficients. To understand the impact of temperature-dependent piezoelectric field on the device performance, the external quantum efficiencies (EQEs) of a blue light-emitting diode are measured in the same temperature range. More severe EQE droops are observed at lower temperatures, which can be attributed to the increase in carrier overflow/spill-over to the p-clad layer enhanced by the stronger piezoelectric fields. The larger blueshifts in mean photon energy are simultaneously observed at lower temperatures, which also confirms the stronger piezoelectric fields at lower temperatures. [ABSTRACT FROM AUTHOR]

When combined with nanostructured substrates, two-dimensional semiconductors can be engineered with strain to tailor light–matter interactions on the nanoscale. Recently, room-temperature nanoscale exciton localization with controllable wrinkling in 1L-WSe2 was achieved using arrays of gold nanocones. Here, the characterization of quantum dot-like states and single-photon emitters in the 1L-WSe2/nanocone system is reported. The nanocones induce a wide range of strains, and as a result, a diverse ensemble of narrowband, potential single-photon emitters is observed. The distribution of emitter energies reveals that most reside in two spectrally isolated bands, leaving a less populated intermediate band that is spectrally isolated from the ensembles. The spectral isolation is advantageous for high-purity quantum light emitters, and anti-bunched emission from one of these states is confirmed up to 25 K. Although the spatial distribution of strain is expected to influence the orientation of the transition dipoles of the emitters, multimodal emission polarization anisotropy and atomic force microscopy reveal that the macroscopic orientation of the wrinkles is not a good predictor of dipole orientation. Finally, the emission is found to change with thermal cycling from 4 to 290 K and back to 4 K, highlighting the need to control factors such as temperature-induced strain to enhance the robustness of this quantum emitter platform. The initial characterization here shows that controlled nanowrinkles of 1L-WSe2 generate quantum light in addition to uncovering potential challenges that need to be addressed for their adoption into quantum photonic technologies. [ABSTRACT FROM AUTHOR]

When combined with nanostructured substrates, two-dimensional semiconductors can be engineered with strain to tailor light–matter interactions on the nanoscale. Recently, room-temperature nanoscale exciton localization with controllable wrinkling in 1L-WSe2 was achieved using arrays of gold nanocones. Here, the characterization of quantum dot-like states and single-photon emitters in the 1L-WSe2/nanocone system is reported. The nanocones induce a wide range of strains, and as a result, a diverse ensemble of narrowband, potential single-photon emitters is observed. The distribution of emitter energies reveals that most reside in two spectrally isolated bands, leaving a less populated intermediate band that is spectrally isolated from the ensembles. The spectral isolation is advantageous for high-purity quantum light emitters, and anti-bunched emission from one of these states is confirmed up to 25 K. Although the spatial distribution of strain is expected to influence the orientation of the transition dipoles of the emitters, multimodal emission polarization anisotropy and atomic force microscopy reveal that the macroscopic orientation of the wrinkles is not a good predictor of dipole orientation. Finally, the emission is found to change with thermal cycling from 4 to 290 K and back to 4 K, highlighting the need to control factors such as temperature-induced strain to enhance the robustness of this quantum emitter platform. The initial characterization here shows that controlled nanowrinkles of 1L-WSe2 generate quantum light in addition to uncovering potential challenges that need to be addressed for their adoption into quantum photonic technologies. [ABSTRACT FROM AUTHOR]

This study explores the effect of molecular permanent dipole moment (PDM) on aggregation of guest molecules in phosphorescent host–guest organic light-emitting diodes (OLEDs). Through a combination of photoluminescence measurements, high-angle annular dark-field scanning transmission electron microscopy analysis, and an Ising model based physical vapor-deposition simulation, we show that higher PDM of tris[2-phenylpyridinato-C2,N]iridium(III) guest can actually lead to a reduced aggregation relative to tris[bis[2-(2-pyridinyl-N)phenyl-C] (acetylacetonato)iridium(III) when doped into a non-polar host 1,3,5-tris(carbazol-9-yl)benzene. This study further explores the effect of host polarity by using a polar host 3′,5′-di(carbazol-9-yl)-[1,1′-biphenyl]-3,5-dicarbonitrile, and it is shown that the polar host leads to reduced guest aggregation. This study provides a comprehensive understanding of the impact of molecular PDM on OLED material efficiency and stability, providing insights for optimizing phosphorescent OLED materials. [ABSTRACT FROM AUTHOR]

In this study, we investigate the tradespace between the improvement of mid-infrared light-emitting diode efficiency through microcavity enhancement vs reduction of Auger recombination for different W-superlattice thicknesses. Several sample designs are modeled and then grown and fabricated to test the tradespace at different W-superlattice thicknesses down to the quantum well limit. In a half-cavity, with a single reflector from the top metal contact, intermediate thickness W-superlattices gave the highest efficiencies, outperforming those in the W-quantum well limit across the entire measured current range. Experimentally, we report wallplug efficiencies of 0.4% for a room temperature 3.2 μm device. W-superlattices of intermediate thickness were also found to be optimal for a full-cavity device with a bottom distributed Bragg reflector added. The resonant full cavity did strongly improve the peak spectral radiance, with a measured increase of four to five times for a 3.6 μm device, and a value that is >250 times larger than previously reported. [ABSTRACT FROM AUTHOR]

Recent years have seen an explosion of interest in organic radicals due to their promise for highly efficient organic light-emitting diodes and molecular qubits. However, accurately and inexpensively computing their electronic structure has been challenging, especially for excited states, due to the spin-contamination problem. Furthermore, while alternacy or "pseudoparity" rules have guided the interpretation and prediction of the excited states of closed-shell hydrocarbons since the 1950s, similar general rules for hydrocarbon radicals have not to our knowledge been found yet. In this article, we present solutions to both of these challenges. First, we combine the extended configuration interaction singles method with Pariser–Parr–Pople (PPP) theory to obtain a method that we call ExROPPP (Extended Restricted Open-shell PPP) theory. We find that ExROPPP computes spin-pure excited states of hydrocarbon radicals with comparable accuracy to experiment as high-level general multi-configurational quasi-degenerate perturbation theory calculations but at a computational cost that is at least two orders of magnitude lower. We then use ExROPPP to derive widely applicable rules for the spectra of alternant hydrocarbon radicals, which are completely consistent with our computed results. These findings pave the way for highly accurate and efficient computation and prediction of the excited states of organic radicals. [ABSTRACT FROM AUTHOR]

Nonvolatile memory using intersubband transitions and quantum-well electron accumulation in GaN/AlN resonant tunneling diodes (RTDs) is a promising candidate for high-speed nonvolatile memory operating on a picosecond timescale. This memory has been fabricated on sapphire(0001) substrates to date because of the high affinity between the nitride materials and the substrate. However, the fabrication of this memory on Si(111) substrates is attractive to realize hybrid integration with Si devices and nonvolatile memory and three-dimensional integration such as chip-on-wafer and wafer-on-wafer. In this study, GaN/AlN RTDs are fabricated on a Si(111) substrate using metal-organic vapor phase epitaxy. The large strain caused by the differences in the thermal expansion coefficients and lattice constants between the Si(111) substrate and nitride materials are suppressed by a growth technique based on the insertion of low-temperature-grown AlGaN and thin AlN layers. The GaN/AlN RTDs fabricated on Si(111) substrates show clear GaN/AlN heterointerfaces and a high ON/OFF ratio of >220, which are equivalent to those for devices fabricated on sapphire(0001) substrates. However, the nonvolatile memory characteristics fluctuate by repeated write/erase memory operations. Evaluation of the ON/OFF switching time and endurance characteristics indicates that the instability of the nonvolatile memory characteristics is caused by electron leakage through deep levels in the quantum-well structure. Possible methods for suppressing this are discussed with an aim of realizing high-speed and high-endurance nonvolatile memory. [ABSTRACT FROM AUTHOR]

Charge carrier mobility and recombination determine the performance of many opto-electronic devices such as solar cells, sensors, and light-emitting diodes. Understanding how these parameters change as a function of material choice, charge carrier density, and device geometry is essential for developing the next generation of devices. The time-delayed collection field (TDCF) technique is becoming a widely used method to measure both recombination and carrier transport with values derived from this method being widely reported for many material systems. However, most novel materials are highly disordered with a high density of trap states and standard TDCF theory neglects the influence of these states. In this work, we examine how reliable TDCF can be as a measurement technique when the device contains significant energetic disorder. We identify regimes where the results can be relied upon and where the results should be taken with more caution. Finally, we provide simple and easy to use experimental tests to help the experimentalist decide whether the physical processes are dominated by trap states. [ABSTRACT FROM AUTHOR]

N-heterocyclic carbene (NHC) iridium(III) complexes are considered as promising candidates for blue emitters in organic light-emitting diodes. They can play the roles of the emitter as well as of electron and hole transporters in the same emission layer. We investigate optical transitions in such complexes with account of geometry and electronic structure changes upon excitation or charging and exciton transfer between the complexes from first principles. It is shown that excitation of NHC iridium complexes is accompanied by a large reorganization energy ∼0.7 eV and a significant loss in the oscillator strength, which should lead to low exciton diffusion. Calculations with account of spin–orbit coupling reveal a small singlet–triplet splitting ∼0.1 eV, whereas the oscillator strength for triplet excitations is found to be an order of magnitude smaller than for the singlet ones. The contributions of the Förster and Dexter mechanisms are analyzed via the explicit integration of transition densities. It is shown that for typical distances between emitter complexes in the emission layer, the contribution of the Dexter mechanism should be negligible compared to the Förster mechanism. At the same time, the ideal dipole approximation, although giving the correct order of the exciton coupling, fails to reproduce the result taking into account spatial distribution of the transition density. For charged NHC complexes, we find a number of optical transitions close to the emission peak of the blue emitter with high exciton transfer rates that can be responsible for exciton–polaron quenching. The nature of these transitions is analyzed. [ABSTRACT FROM AUTHOR]

Laser lift-off (LLO) is an important step in the processing chain of nitride-based light-emitting diodes (LEDs), as it enables the transfer of LEDs from the growth substrate to a more suitable carrier. A distinctive feature of LLO with ultrashort pulses is the ability to use either above- or below-bandgap radiation, since nonlinear absorption becomes relevant for ultrashort pulses. This study addresses the differences in the absorption scheme for below- and above-bandgap radiation and investigates the electrical and optical properties of InGaN/GaN LEDs before and after LLO with 347 and 520 nm laser light via current–voltage and power- as well as temperature-dependent photoluminescence measurements. LLO could be successfully realized with both wavelengths. The threshold fluence required for LLO is about a factor of two larger for 520 nm compared to that for 347 nm. Furthermore, an increase in leakage current by several orders of magnitude and a significant decrease in efficiency with laser fluence are observed for below-bandgap radiation. In contrast, leakage current hardly increases and efficiency is less dependent on the laser fluence for samples lifted with 347 nm. This degradation is ascribed to the absorption of laser light in the active region, which facilitates a modification of the local defect landscape. The effect is more severe for below-bandgap radiation, as more laser light penetrates deep into the structure and reaches the active region. Ultimately, we show that LEDs lifted with ultrashort laser pulses can exhibit good quality, making ultrashort pulse LLO a viable alternative to conventional LLO with nanosecond pulses. [ABSTRACT FROM AUTHOR]

Limited stability of blue quantum dot light-emitting diodes (QLEDs) under current stress impedes commercialization. Multi-layer structures of the state-of-the-art blue QLEDs pose significant difficulty in the fundamental understanding of degradation mechanisms. Here, by applying transient electroluminescence measurements, we disentangle charge transport in both pristine and degraded blue QLEDs. By varying thicknesses of the charge transport layers and the emissive layer, respectively, we show that the charge transport in pristine QLEDs is primarily dominated by holes. Furthermore, the degradation of QLEDs under electrical stress is governed by the decrease of hole transport in the emissive quantum dot layer due to the formation of hole traps. [ABSTRACT FROM AUTHOR]

We introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S21 roll-off slower than −20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles. [ABSTRACT FROM AUTHOR]

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers. [ABSTRACT FROM AUTHOR]

The polarization-induced quantum confined Stark effect has been recognized as a significant factor contributing to the Internal Quantum Efficiency (IQE) droop in light-emitting diodes (LEDs). This study focuses on the design of LEDs by investigating the InAlN/AlGaN interface. By incorporating InAlN quantum wells, a polarization-matched (PM) multi-quantum well (MQW) LED architecture was developed. While the flat conduction and valence bands on PM MQWs indicate an improved recombination rate, it is crucial to examine the impact on IQE, considering carrier confinement and injection efficiency influenced by the band offsets. This paper presents a numerical analysis comparing two LEDs emitting at 245 and 275 nm, respectively. The results demonstrate that the PM LED operating at 275 nm exhibits enhanced performance, benefiting from high probability density overlap. Conversely, the PM LED emitting at 245 nm demonstrates poor confinement, resulting in an overall low performance, regardless of polarization matching. [ABSTRACT FROM AUTHOR]

Designing organic semiconductors for practical applications in organic solar cells, organic field-effect transistors, and organic light-emitting diodes requires understanding charge transfer mechanisms across different length and time scales. The underlying electron transfer mechanisms can be efficiently explored using semiempirical quantum mechanical (SQM) methods. The dimer projection (DIPRO) method combined with the recently introduced non-self-consistent density matrix tight-binding potential (PTB) [Grimme et al., J. Chem. Phys. 158, 124111 (2023)] is used in this study to evaluate charge transfer integrals important for understanding charge transport mechanisms. PTB, parameterized for the entire Periodic Table up to Z = 86, incorporates approximate non-local exchange, allowing for efficient and accurate calculations for large hetero-organic compounds. Benchmarking against established databases, such as Blumberger's HAB sets, or our newly introduced JAB69 set and comparing with high-level reference data from ωB97X-D4 calculations confirm that DIPRO@PTB consistently performs well among the tested SQM approaches for calculating coupling integrals. DIPRO@PTB yields reasonably accurate results at low computational cost, making it suitable for screening purposes and applications to large systems, such as metal-organic frameworks and cyanine-based molecular aggregates further discussed in this work. [ABSTRACT FROM AUTHOR]

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power semiconductor devices. However, fabrication of GaN devices often relies on harsh etch processes, which can leave an etch damage layer, limiting final device performance. In this work, an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)3] is presented for the controlled etching of GaN, which reduces oxygen and carbon contamination while smoothing the surface. The ALE chemistry was first examined with density functional theory. A comparison between proposed thermal and plasma-driven reactions is made by implementing Natarajan–Elliott analysis, highlighting that the plasma process is a good candidate for GaN ALE. Saturation was experimentally confirmed for both ALE half-cycles at 150 and 300 °C, with etch rates of 0.31 ± 0.01 and 0.40 ± 0.02 nm/cycle, respectively. Analysis of the films post-ALE shows that the RMS roughness of the films decreases from 2.6 ± 0.1 to 1.9 ± 0.1 nm after 25 nm of etching at 300 °C, in agreement with a previously developed curvature-dependent smoothing model. Taken together, this ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices. [ABSTRACT FROM AUTHOR]

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power semiconductor devices. However, fabrication of GaN devices often relies on harsh etch processes, which can leave an etch damage layer, limiting final device performance. In this work, an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)3] is presented for the controlled etching of GaN, which reduces oxygen and carbon contamination while smoothing the surface. The ALE chemistry was first examined with density functional theory. A comparison between proposed thermal and plasma-driven reactions is made by implementing Natarajan–Elliott analysis, highlighting that the plasma process is a good candidate for GaN ALE. Saturation was experimentally confirmed for both ALE half-cycles at 150 and 300 °C, with etch rates of 0.31 ± 0.01 and 0.40 ± 0.02 nm/cycle, respectively. Analysis of the films post-ALE shows that the RMS roughness of the films decreases from 2.6 ± 0.1 to 1.9 ± 0.1 nm after 25 nm of etching at 300 °C, in agreement with a previously developed curvature-dependent smoothing model. Taken together, this ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices. [ABSTRACT FROM AUTHOR]

With the use of biotechnology, hydrogen can be produced from wastewater rich in short-chain fatty acids. A previous study revealed the ability of Rhodobacter sphaeroides KKU-PS1 to produce biohydrogen from substrates mimicking succinate fermentation effluent. However, the process still requires optimization. Before illumination optimization, due to high concentration of the effluent, various effluent dilution factors ranging from 10 to 100 were compared, and the optimal dilution factor was determined to be 50. Light-emitting diode (LED) setups consisting of bands and tubes were compared, and various illuminated surface-to-volume ratios (S/V) were obtained. LED tubes were subsequently used for light intensity optimization in the range of 5–23 klux, revealing optimum light intensity at 15 klux, yielding 2202 mL H 2 /L and 13.8 mL H 2 /L/h as the cumulative hydrogen and maximum output rate, respectively. The lighting protocol at 15 klux and with a 6h–6h light-dark cycle improved the total light conversion efficiency by up to 3.1%. The study successfully optimized the process, with results rivalling those of a previous study using malate. [Display omitted] • Photofermentation can convert acidic fermentation effluents to hydrogen energy. • Dilution factor of 50 produced H 2 profile that was comparable to higher dilutions. • Cumulative H 2 peaked at 2202 mL H 2 /L at maximum rate of 13.8 mL H 2 /L/h with 15 klux. • Light saturation point was observed at 15–23 klux with similar H 2 productivity. • 6h–6h light-dark cycle achieved the highest light conversion efficiency of 3.1% at 240 h. [ABSTRACT FROM AUTHOR]

The use of red fluorescent powder derived from nitrides and oxides in warm white LEDs is a pressing concern due to its lower quantum efficiency. Fluoride red phosphors activated by Mn4+ ions show promising potential for application in white light-emitting diodes (LEDs) due to their distinctive narrowband red emission and broad blue excitation, along with the relatively mild synthesis conditions required. However, the quantum efficiency of early Mn4+-doped fluoride phosphors was not optimal, highlighting the importance of identifying a suitable preparation method and matrix. Here, we introduce an efficient and thermally stable red fluoride phosphor, Cs 2 SiF 6 :Mn4+, which demonstrates a remarkable quantum efficiency of 98.32 % achieved through ion exchange techniques. However, even at a temperature of 423 K, the luminous intensity still maintained at 95 % of that under room temperature conditions. By incorporating Cs 2 SiF 6 :Mn4+ as a red emitter, a stable 10 W high-power warm white LEDs with a luminous efficiency of approximately 126.1 lm/W can be realized. These findings underscore the significant potential of the red phosphor Cs 2 SiF 6 :Mn4+ in advancing high-performance, high-power warm white LEDs. [ABSTRACT FROM AUTHOR]

In this article, zinc-borosilicate silicon（ZBS） glass containing europium (Eu) ions and CsPbBr 3 quantum dots (QDs) (ZEQ) was synthesized via melting crystallization route. The composition and luminescent properties are investigated by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and photoluminescence (PL) spectra. The XRD and XPS results imply that Eu 3+, Eu 2+ ions and CsPbBr 3 QDs are coexisted in ZBS glass. The dual-mode emission from cyan to orange-red can be achieved by adjusting the melting temperature. Besides, the ZEQ has good water resistance, outstanding light irradiation and excellent heating-cooling cycle stability. Moreover, based on the ZEQ, the light-emitting diodes (LEDs) are designed to obtain the white light with the correlated color temperature (CCT) of 5255 K, the Coherent Infrared Energy (CIE) color coordinate of (0.337 0.313), the NSCT color gamut of 116 % and 87 % of Rec.2020. Thus, this article provides a novel material ZEQ, which is tunable luminescence and ultra-stable. The strategy provides the route that the luminescence of Eu ions and QDs can be observed at the same time, solving the difficulty of the rare earth ions entering into the QDs lattice. Moreover, the ZEQ is expected to be used as the light source for solid-state lighting and also provides valuable research results for future exploration of functional glass containing both rare-earth ions and QDs materials. [ABSTRACT FROM AUTHOR]

Circularly polarized electroluminescence (CPEL) is highly promising in realm of 3D display and optical data storage. However, designing a groundbreaking chiral material with high comprehensive CPEL performance remains a formidable challenge. In this work, a pair of chiral polymers with self‐assembled behavior is designed by integrating a chiral BN‐moiety into polyfluorene backbone, named R‐PBN and S‐PBN, respectively. The chiral polymers show narrowband emission centered at 490 nm with full‐width half maximum (FWHM) of 29 nm and high photoluminescence quantum yield (PLQY) of 79 %. After thermal annealing treatment, the chiral polymers undergo self‐assembly, exhibiting amplified circularly polarized luminescence (CPL) with asymmetry factor (|glum|) of up to 0.11. Moreover, the solution‐processed nondoped CP‐OLEDs based on the chiral polymers as emitting layers exhibit maximum external quantum efficiency (EQEmax) of 9.8 %, intense CPEL activities with |gEL| of up to 0.07, and small FWHM of 36 nm, simultaneously. This represents the first case of self‐assembled chiral polymers that combines high EQE, large gEL value and narrowband emission. [ABSTRACT FROM AUTHOR]

Although there has been a considerable amount of research on near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs), narrow-band emission and poor thermal stability continue to be problems associated with NIR phosphors. To solve these problems, La3ZrxSn1−xGa5O14:0.015Cr3+ phosphors with ultra-broadband NIR emission were obtained by partially replacing Sn4+ with Zr4+ through a strategy of multiple lattice site occupancy and cationic modulation, which altered the crystal field environment of the material. The spectrum was broadened, and the luminous intensity and thermal stability of the material were successfully improved. Finally, the phosphor was combined with a blue LED chip package, and the broad prospects of the phosphor in the NIR application field were proved by experiments of level detection, biomedical imaging, and night vision monitoring. [ABSTRACT FROM AUTHOR]

Herein, a variety of single-phase full-spectrum emission phosphors doped with Eu2+ were synthesized. Under the 350 nm excitation, as K+ and Y3+ were introduced into Ca 10 Na(PO 4) 7 (CNP):1.5%Eu2+, respectively, the emission color of Ca 9.85 K y Na (1- y) (PO 4) 7 :1.5%Eu2+ (0 ≤ y ≤ 1.0) was tuned from yellow to cyan, while that of Ca (9.85- z) NaY 0.667 z (PO 4) 7 :1.5%Eu2+ (0 ≤ z ≤ 1.0) was tuned from yellow to green. The internal quantum yield (QY) of Ca 9·85 K 0·4 Na 0·6 (PO 4) 7 (CKNP):1.5%Eu2+ and Ca 9·45 NaY 0·267 (PO 4) 7 (CNYP):1.5%Eu2+ reached 47.47 % and 27.11 %, respectively. The introduction of K+ or Y3+ made Eu2+ selectively occupy the Ca sites and led to changes in the local environment of Eu2+, allowing for spectral tuning emission. In addition, the luminescence intensity of the samples retained 54.59 % and 31.34 % of their room temperature values. Eventually, two white light emitting diode (WLED) devices were fabricated, combining the synthesized white emitting phosphors with 365 nm ultraviolet (UV) chips. They exhibited high color rendering indices of 84.7 and 77.0, along with low correlated color temperatures of 5435 K and 5023 K. The Commission Internationale de L'Eclairage (CIE) color coordinates were (0.3349, 0.3975) and (0.3517, 0.4366), respectively. The results pointed to the phosphors' potential suitability for use in the WLED sector. [ABSTRACT FROM AUTHOR]

AbstractThe combination of PbBr2 with 3-(2-pyridyl)-5-(4-chlorophenyl)-1,2,4-triazine (PCPT) results in a 2-D Pb(II) coordination polymer, denoted as [Pb9(PCPT)4Br18]n. This compound has been identified and studied through CHN analysis, FT-IR, and 1H NMR spectroscopy, in addition to detailed analysis using single-crystal X-ray diffraction techniques. Considering the primary and secondary Pb–N and Pb–Br bonds, Pb1 and Pb2 exhibit hemidirected pentagonal bipyramidal geometries, whereas Pb3, Pb4, and Pb5 demonstrate holodirected octahedral geometries. The 2-D structure transitions into a 3-D arrangement due to the presence of non-covalent C–H…Br and π…π stacking interactions. The interactions highlighted above enhance the structural stability and support the transfer of charge and energy between metal centers, positioning the polymer as a potential candidate for luminescence applications. Analysis of the electro-optical characteristics of this compound indicates its suitability as a luminescent material for incorporating into organic light-emitting diodes. [ABSTRACT FROM AUTHOR]

Though micro‐LED (light‐emitting diode) displays are considered the emerging display technology, the micron‐scale LED chip size encounters severe efficiency degradation that may impact the power budget of the displays. This work proposes an ion implantation method to deliberately create a high‐resistivity sidewall in the InGaN/GaN green LED. Our study demonstrates that ion implantation suppresses reverse leakage current due to the mitigation of sidewall defects. For an LED mesa size of 10 × 10 μm2, optical output power density is improved by 36.2% compared to the device without implantation. Compared to a larger 100 × 100 μm2 device without implantation, we achieve only 21.3% degradation of output power density under 10 A/cm2 injection for a 10 × 10 μm2 LED with implantation. In addition, the ion implantation method can lower the wavelength shift by reducing light emission from the region near the sidewall (where the amount of Indium [In] clustering differs from the mesa region). The results show promise in addressing the efficiency challenges of micro‐LED displays by selective ion implantation. [ABSTRACT FROM AUTHOR]

Photodynamic therapy (PDT) is a promising cancer treatment approach. Indocyanine green (ICG) is a water-soluble tricarbocyanine dye with a peak absorption wavelength of around 800 nm and possesses the capacity to produce reactive oxygen species. FTIR spectroscopy is rarely used and offers insights into molecular changes in cancer studies. MCF-7 cells were injected into Nude mouse. Once the tumor had grown to a size of 3–4 mm, mice were randomized into the 12 PDT groups. After each mouse received 5 mg/kg of ICG, they were photo-irradiated with a diode laser emitting light at 809 nm, followed by waiting intervals of 0, 30, 60, and 90 min. Laser irradiation parameters were 150, 250, 500 mW/cm2 and irradiation duration was 1200s. The tumor size was measured every day for four days. The FTIR spectroscopy was used to perform spectral analysis on tumor tissue samples. Four distinct regions (3600–2800 cm-1, 1750–1550 cm-1, 1540–1450 cm-1, and 1700–1100 cm-1) were analyzed, and Hierarchical Cluster study was carried out. A decrease in tumor volume was observed with all PDT applications, except, increases in tumor volume was observed at 150mW 90-minute group. PDT administered after 90 min revealed variations in 150mW and 250mW laser powers in the 3600 cm-1–2800 cm-1 range. The 250mW and 500mW applications resulted in a considerable reduction in fibroadenoma and carcinoma tissues, according to an analysis comparing the A1695 / A1635 ratio. It is proposed that the ideal treatments for further investigation have a power output of 250 mW. [ABSTRACT FROM AUTHOR]

Interfaces play an important role in the heat and stress transfer within applications such as electronic cooling. The coexistence of apparently contradictory properties between heat dissipation and adhesion at interfaces poses a constant challenge for existing interface materials. Herein, a thermal interface material is reported, consisting of epoxy‐functionalized polydimethylsiloxane and aluminum fillers with excellent interfacial heat/force transfer ability. This material optimizes the combination of thermal conductivity of 3.46 W m−1 K−1 and adhesion energy of 1.17 kJ m−2. Using two viscoelastic models, the excellent interfacial force transfer ability is attributed to a hierarchical energy dissipation via the introduction of borate ester bonds and the aluminum filler networks. A simple kinetic bond model demonstrates that the borate ester bonds increase molecular chain segment mobility, allowing full extension at debonding interface for stress dispersion and efficient energy dissipation. The aluminum filler networks not only facilitate thermal transfer, but also dissipate the mechanical energy during filler network destruction due to the bond breakage between fillers. The excellent heat dispassion and mechanical stability are further demonstrated when this thermal interface material is used in flexible light emitting diodes and high‐power chips. This work provides a new strategy for balancing interfacial heat and force transfer. [ABSTRACT FROM AUTHOR]

The island‐bridge structural design is a common strategy for imparting stretchability to flexible electronic devices. In this structure, the low modulus regions bear most of the deformation, while the rigid islands, which house the electronic components, undergo minimal deformation. However, due to the modulus differences that can be several times or even several orders of magnitude larger, severe strain concentration occur at the edges of the rigid islands in high modulus regions. This strain concentration caused by rigid constraints not only reduces the stretchability of the soft substrate but also degrades the mechanical performance of the interconnected structures, thereby significantly affecting the overall stability of the device. Starting from finite element simulations, this paper introduces modulus gradient regions and optimizes geometric parameters, significantly alleviating the strain concentration at the edges of the rigid islands. Serpentine‐shaped circuits are then transferred to a substrate with strain isolation, which demonstrates better stretchability stability under 20% elongation compared to traditional strain isolation strategies. In addition, the stretchable light emitting diode (LED) system with gradient modulus has better stretchability compared to the system with conventional strategy. This suggests that this strategy has great potential in maintaining the stability of stretchable systems. [ABSTRACT FROM AUTHOR]

With an electron-deficient rigid planar structure and excellent π–π stacking ability, hexaazatriphenylene (HAT) and its derivatives are widely used as basic building blocks for constructing covalent organic frameworks (COFs), components of organic light-emitting diodes and solar cells, and electrode materials for lithium-ion batteries (LIBs). Here, a HAT derivative, hexaazatriphenylenehexacarbonitrile, is explored as an anode material for LIBs. The HAT anode exhibited high initial reversible capacities of 672 mA h g−1 at 100 mA g−1 and 550 mA h g−1 at 400 mA g−1 and stable cycling with a capacity of 503 mA h g−1 after 1000 cycles at 400 mA g−1 corresponding to a capacity retention of 91.5%. Furthermore, the lithium storage mechanism and the cause of the first irreversible capacity loss of the HAT anode were investigated by X-ray photoelectron spectroscopy (XPS) analysis and density functional theory (DFT) calculations. We have carried out a series of analyses on the mechanism of initial capacity loss. This study provides new insight on initial capacity loss and provides valuable insights into the molecular design and the electrochemical properties of HAT-based anode materials. [ABSTRACT FROM AUTHOR]

Solid-state phosphor-converted white light-emitting diodes (pc-WLEDs) are the leading trend of the lighting industry in the 21st century. To pursue high quality WLED lighting, the development of highly efficient phosphors with tunable luminescence has become a hot research topic. Herein, we reported for the first time on Bi3+/Eu3+-doped Li3Ba2Y3(WO4)8 phosphors that exhibited tunable emission and high energy transfer efficiency of 89.90% from Bi3+ to Eu3+. The phase purity, microstructure, electronic structure and photoluminescence properties of these phosphors were studied in detail. Bi3+ and Eu3+ were effectively doped in Li3Ba2Y3(WO4)8 with an optical bandgap of 3.81 eV. The band structure and density of states were quantitatively evaluated by density functional theory simulation. At an excitation wavelength of 342 nm, the Bi3+-doped phosphor achieved yellow-green emission. By alloying Eu3+ into Li3Ba2Y3(WO4)8:Bi3+, the luminescence gradually turned red due to the energy transfer from Bi3+ to Eu3+. Moreover, the activation energy of the prepared phosphor was 0.1897 eV, demonstrating excellent thermal stability. Eventually, by combining Li3Ba2Y3(WO4)8:4%Bi3+,4%Eu3+ and a blue-emitting BAM:Eu2+ phosphor with a 365 nm ultraviolet chip, a WLED device with a high colour rendering index (Ra) of 78.7, chromaticity coordinates of (0.3401, 0.3131) and correlated colour temperature of 5080 K was successfully achieved. This work provided new insights into the design and development of color-tunable phosphors for white LEDs. [ABSTRACT FROM AUTHOR]

The eyes play a special role in human communications. Previous psychological studies have reported reflexive attention orienting in response to another individual's eyes during live interactions. Although robots are expected to collaborate with humans in various social situations, it remains unclear whether robot eyes have the potential to trigger attention orienting similarly to human eyes, specifically based on mental attribution. We investigated this issue in a series of experiments using a live gaze-cueing paradigm with an android. In Experiment 1, the non-predictive cue was the eyes and head of an android placed in front of human participants. Light-emitting diodes in the periphery served as target signals. The reaction times (RTs) required to localize the valid cued targets were faster than those for invalid cued targets for both types of cues. In Experiment 2, the gaze direction of the android eyes changed before the peripheral target lights appeared with or without barriers that made the targets non-visible, such that the android did not attend to them. The RTs were faster for validly cued targets only when there were no barriers. In Experiment 3, the targets were changed from lights to sounds, which the android could attend to even in the presence of barriers. The RTs to the target sounds were faster with valid cues, irrespective of the presence of barriers. These results suggest that android eyes may automatically induce attention orienting in humans based on mental state attribution. [ABSTRACT FROM AUTHOR]

Hot-carrier solar cells offer the potential for enhanced power conversion efficiency by tapping into the kinetic energy of hot carriers generated upon sunlight absorption. This involves using specially designed materials capable of efficiently extracting and utilizing the energy of these hot carriers to produce electrical power. Here, we observed such a hot carrier effect in hexamine doped methylammonium lead triiodide perovskite solar cells when exposed to 100 mW/cm2 of 5000 K white LED light. We discovered that these perovskite solar cells exhibited remarkable power conversion efficiency, reaching up to 54.22% with the Voc (open-circuit voltage) and Jsc (short-circuit current density) values were measured at 1.10 V and 54 mA/cm2, respectively. In comparison, under similar conditions but using a solar simulator, the power conversion efficiency remained below 20%. Our results suggest that the high PCE under white LED irradiation is due to the fine resonance between the light energy and perovskite band gap energy, enabling long carrier lifetime and then allowing massive photovoltaics process. These findings highlight the alternative to achieve hot carrier's perovskite solar cells and efficient energy generation by converting light energy into the wavelength match with the perovskite materials absorber energy band gap. [ABSTRACT FROM AUTHOR]

Light intensity is a critical environmental factor influencing plant growth and development. To survive high light conditions, plants have evolved various protective mechanisms, including non-photochemical quenching (NPQ). However, NPQ can limit effective photosynthetic yield when transitioning to low light conditions. This phenomenon is underexplored in cassava (Manihot esculenta), a starchy storage root crop known for its high biological efficiency and climate resilience. To address this knowledge gap, we assessed the photoprotective abilities and growth responses of six cassava varieties under natural environmental light conditions (control) and intermittent high light (IHL) conditions by adding 900 μmol m−2 s−1 using full-spectrum LED lights, on top of the natural ambient daylight. Our results demonstrated a significant impact of light treatment on aboveground biomass, total crop biomass, chlorophyll a and b content, photosynthetic rate, and NPQ values during transitions from low to high light and vice versa. Notably, cassava variety 'Sree Suvarna' exhibited the highest yield under both control and IHL conditions. These findings suggest that screening cassava varieties for their ability to postpone photoinhibition and recover quickly from photoinhibition may enhance photosynthetic performance. Such strategies have important implications for improving the efficiency and resilience of cassava crops, ultimately contributing to sustainable agricultural productivity. Excessive light can be detrimental to plant growth. To overcome this, plants employ photoprotective non-photochemical quenching (NPQ) mechanisms. This study evaluated NPQ kinetics and growth of six cassava (Manihot esculenta) varieties under natural and intermittent high light conditions. Exposure to high light significantly affected biomass production, chlorophyll content, and photosynthesis, with the variety 'Sree Suvarna' demonstrating the highest yield across all conditions. Identifying cassava varieties with effective NPQ regulation could improve photosynthetic efficiency and enhance crop resilience, supporting sustainable agricultural productivity. [ABSTRACT FROM AUTHOR]

The introduction of white light-emitting diodes (LEDs) is one of the key innovations that has revolutionized the lighting industry due to its multiple benefits. Despite their advantages, there is a gap in the environmental impact information of the recently developed high-power LED products within the whole lifecycle, which is a key step to achieve sustainable and green development. This life cycle assessment (LCA) is conducted by considering the cradle-to-grave system boundary. The functional units considered are a LED and compact fluorescent lamp (CFL) of 40 million lumen-hours (lm-h) used for indoor applications over an operating time of 20 000 h. In this study, the LCA was carried out using the SimaPro software and built-in ecoinvent database V2.2 with appropriate life cycle inventory data. The analysis results indicate that: (1) the LED-package has a dominant environmental impact followed by the LED driver while the housing and corrugated-board packaging materials showed the least negative effect to the ecosystem during the manufacturing phase. On the contrary, the CFL drivers are dominant followed by the light sources in the case of CFLs. From the lifecycle stages, the usage-phase showed a predominant environmental effect, mainly due to the energy consumption and sources of energy production. (2) A scenario analysis on the sources of electricity production revealed that prospective sources (70% natural gas, 25% nuclear and 5% pumped storage) of energy production lowered the environmental impact compared to the current electricity mix. These proposed electricity generation production sources provide a 61% reduction in the global warming potential in light sources for Hong Kong. [ABSTRACT FROM AUTHOR]

Societal Impact Statement Summary The use of chemical plant protection products must be reduced to promote sustainability in food production. One possible alternative is biological control agents (BCAs), but their efficacy under commercial conditions does not always reach the standard of chemical control agents. Previously, light has been found to induce mechanisms in bacterial BCAs that can affect their distribution and establishment. This could promote BCA efficacy. We looked into how monochromatic and polychromatic (which is what growers use) light treatments affected the occurrence of three BCAs post‐application. By combining two non‐chemical methods: a biological (BCA) and a cultural (light) control method, this offers a new integrated pest control strategy. The dynamics and functionality of beneficial and non‐beneficial, non‐phototrophic bacteria can be influenced by light quality. We investigated if light could aid the survival of three bacterial biological control agents (BCAs; Bacillus amyloliquefaciens DSM7, Pseudomonas chlororaphis 50083 and Streptomyces griseoviridis CBS904.68) in the canopy of greenhouse‐grown tomatoes at four light treatments. Tomato plants were exposed to 50 μmol m−2 s−1 of either polychromatic light (white) or monochromatic light (blue: 420 nm, green: 530 nm and red: 660 nm) using DYNA LED lamps for a total of 48 h post foliar application of the BCAs. Leaves were harvested from two levels in the canopy at the top and middle of each plant at 0, 2, 4, 8, 12, 24 and 48 h post inoculation. The occurrences of the BCAs were quantified by plate count and droplet digital PCR (ddPCR). S. griseoviridis persisted under most treatments, whereas P. chlororaphis and B. amyloliquefaciens preferred the polychromatic and green light treatments as depicted by the viable count analyses. Significant differences between the DNA and cDNA concentrations were only noted for P. chlororaphis, with prominent wavelength effects. Light exposure dose, placement in the canopy and wavelength were found to be decisive factors for BCA re‐isolation, indicating that they have different optimal light environments. [ABSTRACT FROM AUTHOR]

The aim of this study was to evaluate the degree of conversion (DC), Vickers microhardness (VHN), main components and surface properties of a microhybrid and two bulk-fill composite resins polymerized with second and third generation light emitting diodes (LED). Sixty cylindrical specimens of Filtek™ Bulk-Fill, everX Posterior (bulk technique) and Filtek Z250 (incremental technique) were prepared in plexiglass molds (5 mm in diameter and 4 mm in thickness) and cured with second-generation LED (Woodpecker LED.B) and third-generation LED (Valo) resulting in six groups (n = 10). DC was determined using Fourier transform infrared spectroscopy (FT-IR), and VHN with Vickers microhardness tester. The main components were identified by means of energy-dispersive X-ray spectroscopy (EDX) microanalysis; whereas filler particles and surface properties were analyzed by scanning electron microscopy (SEM). VHN and DC data were analyzed using two-way ANOVA, followed by t-test with Bonferroni correction for pairwise comparison (p < 0.05). When DC and VHN values were evaluated, after polymerization with second and third generation LED, there was a statistical difference in bulk-fill composites, while there was no statistical difference in microhybrid composite. While, the highest DC and VHN values were obtained after polymerization of Filtek Z250 with Valo, the lowest DC and VHN values were obtained with Filtek Bulk-Fill with Woodpecker LED.B. The degree of conversion and microhardness are affected by the structure of the composite resin and LEDs. [ABSTRACT FROM AUTHOR]

Near‐infrared light‐emitting diodes (NIR LEDs) based on perovskite quantum dots (QDs) have produced external quantum efficiency (EQE) of ~15 %. However, these high‐performance NIR‐QLEDs suffer from immediate carrier quenching because of the accumulation of migratable ions at the surface of the QDs. These uncoordinated ions and carriers—if not bound to the nanocrystal surface—serve as centers for exciton quenching and device degradation. In this work, we overcome this issue and fabricate high‐performance NIR QLEDs by devising a ligand anchoring strategy, which entails dissolving the strong‐binding ligand (Guanidine Hydroiodide, GAI) in the mediate‐polar solvent. By employing the dye‐sensitized device structure (phosphorescent indicator), we demonstrate the elimination of the interface defects. The treated QDs films exhibit an exciton binding energy of 117 meV: this represents a 1.5‐fold increase compared to that of the control (74 meV). We report, as a result, the NIR QLEDs with an EQE of 21 % which is a record among NIR perovskite QLEDs. These QLEDs also exhibit a 7‐fold higher operational stability than that of the best previously reported NIR QLEDs. Furthermore, we demonstrate that the QDs are compatible with large‐area QLEDs: we showcase 900 mm2 QLEDs with EQE approaching 20 %. [ABSTRACT FROM AUTHOR]

This study was aimed at evaluating the effects of light-emitting diode (LED) (blue, green, red, and white) on carotenoid and lipid production by Rhodotorula mucilaginosa CCT 7688. Results showed that LED at 50 µmol m−2 s−1 enhanced carotenoid production in all colors under study, by comparison with the control (1794.21 µg L−1). However, both green (3473.00 µg L−1) and red (3497.76 µg L−1) stood out in the production since there was increase of 93.5 and 94.9%, respectively. β-Carotene and astaxanthin were found to be the major carotenoids. However, at intensity of 100 µmol m−2 s−1, there was decrease (green 1377.0 µg L−1; red 826.86 µg L−1). In lipid production, there was no significant change when 50 µmol m−2 s−1 was used. The yeast exhibited distinct behavior towards the LED; i.e., carotenogenic production was notably more accentuated, a fact that shows that adequate illumination is an effective strategy to increase carotenoid production. In this sense, it is concluded that the intensity of light and colors applied to microbial cultivation is extremely important, as it affects the metabolism of yeasts, leading to an increase in the production of carotenoids and causing a significant change in the profile of fatty acids produced. [ABSTRACT FROM AUTHOR]

Cross-linkable hole-transporting materials with a new cross-linking group, benzocyclobutene, are designed and synthesized. These materials dissolve well in common organic solvents and exhibit excellent solvent resistance after thermal cross-linking. Electroluminescent (EL) devices were fabricated using these two hole-transporting materials. [ABSTRACT FROM AUTHOR]

Few-layered N -doped rGO nanosheets covered with defective TiO 2- x nanoparticles form an enriched 2D/0D Schottky heterojunction through interfacial N -Ti and C-Ti bonds, serving as a bipolar cathode host for lithium-sulfur batteries with enhanced electrochemical properties. [Display omitted] The shuttling and sluggish conversion kinetics of lithium polysulfides (LiPSs) lead to poor cycling performance and low energy efficiency in lithium-sulfur batteries (LSBs). In this work, a hierarchically structured nanocomposite, synthesized through a surfactant-directed hydrothermal growth following dopamine-protected pyrolysis, serves as a bidirectional catalyst for LSBs. This nanocomposite comprises N -doped reduced graphene oxide (rGO) nanosheets anchored with uniformly distributed TiO 2- x nanoparticles via interfacial N -Ti and C-Ti bonding, resulting in the formation of abundant 2D/0D Schottky heterojunctions (rGO/TiO 2- x). Density functional theory (DFT) calculations and in situ Raman characterizations demonstrate that rGO/TiO 2- x effectively inhibits the shuttling of LiPSs with enhanced redox kinetics, achieving high utilization of the sulfur cathode and improving the overall reversibility. A high areal capacity is attained at a high sulfur loading and a low electrolyte/sulfur ratio. The initial specific capacity reaches 1010 mA h g−1 at a current density of 0.2C (1C = 1675 mA g−1), and a retention of 86.4 % is attained over 100 cycles. A light-emitting diode (LED) screen using two LSBs with rGO/TiO 2- x demonstrates their high potential for practical applications. [ABSTRACT FROM AUTHOR]

Broadband near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) have become important as new NIR light sources in NIR spectroscopy and NIR imaging techniques. However, currently developed broadband NIR phosphors commonly suffer from weak emission and poor thermal stability. In this work, a series of Gd 3 Lu 2 Ga 3 O 12 : Cr3+ phosphors were synthesized via high-temperature solid-state reaction. Under 460 nm excitation, the phosphors exhibit an intense emission spanning from 650 to 1150 nm with a full width at half maximum (FWHM) of 122 nm. After introducing Yb3+ as a co-dopant, the emission of the phosphor has been broadened greatly. Interestingly, the studied phosphors demonstrate super high thermal stability in a wide temperature range of 35–560 K, with the integrated emission intensity fluctuating within 10 %. At 435 K, the emission intensity of Gd 3 Lu 2 Ga 3 O 12 : 0.03Cr3+ remains 99.5 % and Gd 3 Lu 2 Ga 3 O 12 : 0.03Cr3+, 0.01 Yb3+ keeps 102.7 % of the initial intensity at room temperature. These NIR phosphors have been encapsulated with a common commercial 460 nm blue LED chip to fabricate a pc-LED device. The NIR output power of the device reaches 23.93 mW@100 mA, with a photoelectric conversion efficiency of 9.81 % at 20 mA current. The applications of the prepared NIR light source in night vision, and bioimaging have been demonstrated. The results show that these Cr3+/Yb3+ doped garnet phosphors can be effectively used in NIR light sources. [ABSTRACT FROM AUTHOR]

Due to the adoption of fluorescent powder encapsulated by organic resin, commercial light emitting diodes (LEDs) suffer from low thermal stability and poor light quality under high temperature, and luminescent glass is one of the effective ways to solve this problem. A series of borosilicate (B 2 O 3 –SiO 2 –Al 2 O 3 –PbO-Dy 2 O 3 –Eu 2 O 3 , marked as BSAP: DyEu) was prepared by the gas suspension technique. The basic characterization test indicate that the prepared glass has excellent thermal stability and stable structure. The optical properties of the luminescent glass were investigated in detail. By changing the Eu3+ doping amount, the Dy3+/Eu3+ co-doped glass can realize warm white light emission. The temperature-variable fluorescence spectra of BASP: Dy1.25Eu1.0 were analyzed, and the glass can produce strong warm white light emission in a wide temperature range. At 700 K, the luminous intensity of the glass remains above 38.49 % of the room temperature, and the chroma shift ΔC = 8.57 × 10−3. In addition, the w- LED device based on commercial GaN chip and BSAP: DyEu glass realizes warm white light output with excellent correlated color temperature (3063 K) and high color rendering index (90.3). The analysis shows that Dy3+/Eu3+ co-doped borosilicate glass can be used as a candidate material for w- LED applications. [ABSTRACT FROM AUTHOR]

Mn4+ activated fluoride red phosphors are used in warm white light emitting diodes (WLEDs). However, their inherently low moisture resistance is a major barrier to their use in high humidity conditions. In this work, the Nb-based oxyfluoride phosphors A x NbOF y :Mn4+ (A = Na, Cs; x = 2, 3; y = 5, 6) were synthesized by the co-precipitation method. The crystal structure, morphology, and luminescence properties are investigated with composition variation. The non-equivalent replacement of Nd5+ ions by Mn4+ results in bright red emission under blue light excitation. These phosphors showed very good moisture resistant luminescence. The best performance was achieved by the Na 3 NbOF 6 :0.1%Mn4+, which retained 98 % of the initial fluorescence intensity after immersion in water for 60 min. In addition, the W6+ and Mo6+ are used to compensate for the charge difference between Mn4+ and Nd5+ in Na 3 NbOF 6 :Mn4+. The compensated phosphors have shown large enhancements of 169 % (W6+) and 168 % (Mo6+) in luminescence intensity. This strategy of non-equivalent doping approach of Mn4+ into the Nb-based oxyfluoride materials and the charge compensation by W6+/Mo6+ to enhance the luminescence intensity provides a new way to realize high performance red phosphors for WLEDs. [ABSTRACT FROM AUTHOR]

The utilization of perovskite quantum dots (PQDs) in photoelectric devices is indeed an area of intense research due to their advantageous properties such as tunability of visible light and efficient light emission. In this study, mixed CsPbI 3 and FAPbI 3 PQD dispersions were successfully employed for cation exchange to prepare red-color Cs 1−x FA x PbI 3 PQD with the photoluminescence (PL) wavelength from 689 nm (x = 0) to 778 nm (x = 1). It is also found that the aggregation of Cs 1−x FA x PbI 3 PQD films were strongly dependent on x. When x from 0 to 0.6, the holes in PQD thin films were gradually improved. On the opposite, when x > 0.6, the PQDs thin films returned more and more holes due to an excess of FA + cations. The resulting Cs 1-x FA x PbI 3 PQD based light-emitting diodes (LEDs) also demonstrated tunable emission wavelengths, and it is worth mentioning that the maximum external quantum efficiency (EQE) of 11.22 % was achieved with an emission wavelength of 758 nm when x = 0.6. [ABSTRACT FROM AUTHOR]

In recent decades, numerous red phosphors have been designed and developed. Nevertheless, many of them are unsatisfactory due to their low brightness and poor thermal stability. Look at these shortcomings; present study reports on Eu3+ doped Y 2 Si 2 O 7 (YPS) phosphors, synthesized through low temperature based urea assisted gel-combustion method. Comprehensive investigations were conducted on phase purity, luminous characteristics, energy transfer mechanism, quantum efficacy, morphology, elemental makeup, band gap and thermal stability. XRD analysis was employed to verify the preparation of Y 2 Si 2 O 7 matrix with triclinic structure (P-1 space group). Morphology and elemental investigations of the fabricated materials was evaluated via TEM and EDX techniques respectively. Under the illumination at 393 nm, the most strong emission band is shown in PL spectra at 613 nm (electric dipole 5D 0 →7F 2 transition). Additionally, the dipole-quadrupole (d-q) interaction was found to be the predominant route of energy transfer among nearby Eu3+ ions and it was concluded that 3 mol % was the optimal doping concentration of Eu3+ ions. The Judd-Ofelt (J-O) theory was used for current phosphors in order to establish their Ω 2 and Ω 4 with other radiative parameters. The assessment of thermal stability yielded highly promising results with activation energy of 0.241 eV. Present research indicates that Y 2 Si 2 O 7 :Eu3+ is a promising candidate of red emitting phosphor for white light-emitting diodes. [Display omitted] • Gel-combustion derived Eu3+ doped Y 2 Si 2 O 7 nanophosphors were crystallized into triclinic symmetry with P–1 space group. • Dominance of electric dipole 5D 0 →7F 2 transition at 613 nm was observed which define the red color of synthesized nanophosphors. • The luminous thermal stability revealed 69.4 % of luminescence at 498 K with activation energy of 0.241 eV. • Colorimetric investigation of the synthesized Y 2 Si 2 O 7 :Eu3+ nanophosphors validate their applicability in white light applications. [ABSTRACT FROM AUTHOR]

Underwater wireless optical communication (UOWC) systems have lately garnered a significant amount of attention for both academic purposes and trial applications. Although the idea is not new, the fact that seawater has a smaller window of absorption for blue-green light has reawakened interest in it, and it has grown an essential attraction because of its high bandwidth, it can cover a wide variety of underwater activities as compared to radio frequency and acoustic technologies. To monitor pollution, maintain oil pipelines, monitor climate change, conduct offshore investigations, and conduct oceanography research, the wireless transmission of information underwater technology is of importance to the military, industrial, and scientific organizations all around the world. The use of wavelengths of visible light to transmit secure data across point-to-point connections in underwater optical wireless communication (UOWC) compares well with the usage of free-space optical (FSO) communications. However, UWOC systems also have a huge amount of absorption and scattering introduced by the aquatic channels. Different from standard terrestrial free-space optical communication, many unique system design strategies have been investigated in recent years to solve these technological issues. This article presents a vision as well as various obstacles in the domain of underwater optical wireless communication, a detailed overview, and comparison of underwater communications techniques (UOWC) links, basic modulation technique techniques, and c pursuits on UWOC. [ABSTRACT FROM AUTHOR]