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In this work, we present the following important results: 1) We introduce a new Si source, liquid SiCl4, which is free of C, to significantly enhance the irreversibility field (Hirr), the upper critical field (Hc2), and the critical current density (Jc), with little reduction in the critical temperature (Tc). 2) Although Si can not incorporate into the crystal lattice, we found a reduction in the a-axis lattice parameter, to the same extent as for carbon doping. 3) The SiCl4 treated MgB2 shows much higher Jc with superior field dependence above 20 K than undoepd MgB2 and MgB2 doped with various carbon sources. 3) We provide an alternative interpretation for the reduction of the a lattice parameter in C- and non-C doped MgB2. 4). We introduce a new parameter, RHH (Hc2/Hirr), which can clearly reflect the degree of flux pinning enhancement, providing us with guidance for further enhancing Jc. 5) We have found that spatial variation in the charge carrier mean free path is responsible for the flux pinning mechanism in the SiCl4 treated MgB2 with large in-field Jc., Comment: 18 pages, 9 figures

Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying., Comment: 17 pages, 4 figures, to be published in Superconductor Science and Technology

We present the fabrication and test results of Hot-Isostatic-Pressed (HIPed) Powder-in-Tube (PIT) MgB$_2$ coils. The coils properties were measured by transport and magnetization at different applied fields ($H$) and temperatures ($T$). The engineering critical current ($J_e$) value is the largest reported in PIT MgB$_2$ wires or tapes. At 25 K our champion 6-layer coil was able to generate a field of 1 T at self-field ($I_c >$ 220 A, $J_e \sim 2.8 \times 10^4$ A/cm$^2$). At 4 K this coil generated 1.6 T under an applied field of 1.25 T ($I_c \sim350$ A, $J_e \sim 4.5 \times 10^4$ A/cm$^2$). These magnetic fields are high enough for a superconducting transformer or magnet applications such as MRI. A SiC doped MgB$_2$ single layer coil shows a promising improvement at high fields and exhibits $J_c > 10^4$ A/cm$^2$ at 7 T., Comment: 8 pages 3 figures

Bulk MgB2 samples were prepared under different synthesis conditions and analyzed by scanning and transmission electron microscopy. The critical current densities were determined from the magnetization versus magnetic field curves of bulk and powder-dispersed-in-epoxy samples. Results show that through a slow cooling process, the oxygen dissolved in bulk MgB2 at high synthesis temperatures can segregate and form nanometer-sized coherent precipitates of Mg(B,O)2 in the MgB2 matrix. Magnetization measurements indicate that these precipitates act as effective flux pinning centers and therefore significantly improve the intra-grain critical current density and its field dependence., Comment: 4 pages, 4 figures, to be published in IEE Transactions in Applied Superconductivity

We have performed microwave measurements on superconducting hot-isostatically- pressed (HIPed) bulk MgB2 using a parallel-plate resonator technique. The high density and strength of the HIPed material allowed preparation of samples with mirror-like surfaces for microwave measurements. The microwave surface resistance decreased by about 40% at 20 K when the root-mean-square surface roughness was reduced from 220 nm to 110 nm through surface-polishing and ion-milling. The surface resistance was independent of surface microwave magnetic field at least up to 4 Oe and below 30 K. We attribute this behavior, and the overall low surface resistance (~0.8 mOhms at 10 GHz and 20 K), to the high density of our samples and the absence of weak links between grains.

The critical current density (Jc) of hot isostatic pressed (HIPed) MgB2 wires, measured by d.c. transport and magnetization, is compared with that of similar wires annealed at ambient pressure. The HIPed wires have a higher Jc than the annealed wires, especially at high temperatures and magnetic fields, and higher irreversibility field (Hirr). The HIPed wires are promising for applications, with Jc>106 A/cm2 at 5 K and zero field and >104 A/cm2 at 1.5 T and 26.5 K, and Hirr ~ 17 T at 4 K. The improvement is attributed to a high density of structural defects, which are the likely source of vortex pinning. These defects, observed by transmission electron microscopy, include small angle twisting, tilting, and bending boundaries, resulting in the formation of sub-grains within MgB2 crystallites., Comment: 13 pages,3 figures

The microstructures of MgB2 wires prepared by the powder-in-tube technique and subsequent hot isostatic pressing were investigated using transmission electron microscopy. Large amount of crystalline defects including small angle twisting, tilting, and bending boundaries, in which high densities of dislocations reside, were found forming sub-grains within MgB2 grains. It is believed that these defects resulted from particle deformation during the hot isostatic pressing process and are effective flux pinning centers that contribute to the high critical current densities of the wires at high temperatures and at high fields., Comment: 16 pages, 6 figures

MgB2 samples prepared by solid-state reaction were investigated using high-resolution transmission electron microscopy (HREM), X-ray energy-dispersive spectroscopy (EDX), electron energy-loss spectroscopy (EELS), and energy-filtered imaging. Large amounts of coherent precipitates with a size range from about 5 nm up to about 100 nm were found in the MgB2 crystallite matrices. The precipitates are of different shapes including sphere, ellipsoid, and faceted polyhedron depending on the size of the precipitates. EDX and EELS analyses confirm that smaller precipitates contain magnesium, boron and oxygen while larger faceted precipitates contain mainly magnesium and oxygen, implying that the oxygen content increases with precipitate size. HREM and electron diffraction investigations found that the precipitates have the same crystal lattice structure as that of MgB2 but with various composition modulations depending on the composition of the precipitates. The precipitates transform to the MgO phase after long exposure to residual oxygen in flowing Ar gas at high temperatures. The effect of the precipitates in different size ranges on flux pinning is discussed., Comment: 29 pages, 9 Figures, to be published in J. Applied Physics

We report dc transport and magnetization measurements of Jc in MgB2 wires fabricated by the powder-in-tube method, using commercial MgB2 powder with 5 %at Mg powder added as an additional source of magnesium, and stainless steel as sheath material. By appropriate heat treatments, we have been able to increase Jc by more than one order of magnitude from that of the as-drawn wire. We show that one beneficial effect of the annealing is the elimination of most of the micro-cracks, and we correlate the increase in Jc with the disappearance of the weak-link-type behavior., Comment: 12 pages, 3 figures, submitted to APL

Here we describe the results of an atomic resolution study of oxygen incorporation into bulk MgB2. We find that ~20-100 nm sized precipitates are formed by ordered substitution of oxygen atoms onto boron lattice sites, while the basic bulk MgB2 crystal structure and orientation is preserved. The periodicity of the oxygen ordering is dictated by the oxygen concentration in the precipitates and primarily occurs in the (010) plane. The presence of these precipitates correlates well with an improved critical current density and superconducting transition behavior, implying that they act as pinning centers., Comment: Submitted to Applied Physics Letters, 6 pages, 3 figures

The sizes and concentrations of capped and surface InGaAs/GaAs quantum dots (QDs) grown under the same conditions have been investigated.