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Kagome metals have emerged as a frontier in condensed matter physics due to their potential to host exotic quantum states. Among these, CsV3Sb5 has attracted significant attention for the unusual coexistence of charge density wave (CDW) order and superconductivity, presenting an ideal system for exploring novel electronic and phononic phenomena. The nature of CDW formation in CsV3Sb5 has sparked considerable debate. Previous studies have suggested that the underlying mechanism driving the CDW transition in CsV3Sb5 is distinct from conventional ones, such as electron-phonon coupling and Fermi surface nesting. In this study, we examine the origin of the CDW state via ab initio finite-temperature simulations of the lattice dynamics associated with CDW structures in CsV3Sb5. Through a comparative study of CsV3Sb5 and 2H-NbSe2, we demonstrate that the experimental absence of phonon softening in CsV3Sb5 and the presence of a weakly first order transition can be attributed to quantum zero-point motion of the lattice, which leads to smearing of the CDW landscape and effectively stabilizes the pristine structure even below the CDW transition temperature. We argue that this surprising behavior could cause coexistence of pristine and CDW structures across the transition and lead to a weak first-order transition. We further discuss experimental implications and use the simulation to interpret coherent phonon spectroscopy results in single crystalline CsV3Sb5. These findings not only refine our fundamental understanding of CDW transitions, but also highlight the surprising role of quantum effects in influencing macroscopic properties of relatively heavy-element materials like CsV3Sb5. Our results provide crucial insights into the formation mechanism of CDW materials that exhibit little to no phonon softening, including cuprates, aiding in the understanding of the CDW phase in quantum materials.

Photostriction is a phenomenon that can potentially improve the precision of light-driven actuation, the sensitivity of photodetection, and the efficiency of optical energy harvesting. However, known materials with significant photostriction are limited, and effective guidelines to discover new photostrictive materials are lacking. In this study, we perform a high-throughput computational search for new photostrictive materials based on simple thermodynamic descriptors, namely the band gap pressure and stress coefficients. Using constrained density functional theory simulations, we establish that these descriptors can accurately predict intrinsic photostriction in a wide range of materials. Subsequently, we screen over 4770 stable semiconductors with a band gap below 2 eV from the Materials Project database to search for strongly photostrictive materials. This search identifies PtS$_2$ and Te$_2$I as the most promising ones, with photostriction exceeding 10$^{-4}$ with a moderate photocarrier concentration of 10$^{18}$ cm$^{-3}$. Furthermore, we provide a detailed analysis of factors contributing to strong photostriction, including bulk moduli and band-edge orbital interactions. Our results provide physical insights into photostriction of materials and demonstrate the effectiveness of using simple descriptors in high-throughput searches for new functional materials.

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator {\alpha}-RuCl3. At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems., Comment: Comments are welcome. Please email feedback to bliao@ucsb.edu

Manipulating thermal properties in materials has been of fundamental importance for advancing innovative technologies. Heat carriers such as phonons are impeded by breaking crystal symmetry or periodicity. Notable methods of impeding the phonon propagation include varying the density of defects, interfaces, and nanostructures, as well as changing composition. However, a robust link between the individual nanoscale defect structures, phonon states, and macroscopic thermal conductivity is lacking. Here we reveal from nanoscale structure-phonon mechanisms on how the grain boundary (GB) tilt and twist angles fundamentally drive the changes in atom rearrangements, exotic vibrational states, and finally macroscopic heat transport at different bicrystal strontium titanate GBs using emerging atomic resolution vibrational spectroscopy. The 10 deg and 22 deg tilt GBs exhibit reduced phonon populations by 54% and 16% compared to the bulk value, respectively, consistent with measured thermal conductivities. A tiny twist angle further introduces a fine and local tunning of thermal conductivity by introducing twist induced defects periodically embedded with the tilt induced GB defects. Our results demonstrate that varying the tilt angle coarsely modifies the phonon population along entire GB while varying the twist angle incurs a finer adjustment at periodic locations on the GB. Our study offers a systematic approach to understanding and manipulating cross GB thermal transport of arbitrary GBs predictably and precisely.

Semiconductor heterojunctions have gained significant attention for efficient optoelectronic devices owing to their unique interfaces and synergistic effects. Interaction between charge carriers with the heterojunction plays a crucial role in determining device performance, while its spatial-temporal mapping remains lacking. In this study, we employ scanning ultrafast electron microscopy (SUEM), an emerging technique that combines high spatial-temporal resolution and surface sensitivity, to investigate photocarrier dynamics across a Si/Ge heterojunction. Charge dynamics are selectively examined across the junction and compared to far bulk areas, through which the impact of the built-in potential, band offsets, and surface effects is directly visualized. In particular, we find that the heterojunction drastically modifies the hot photocarrier diffusivities by up to 300%. These findings are further elucidated with insights from the band structure and surface potential measured by complementary techniques. This work demonstrates the tremendous effect of heterointerfaces on charge dynamics and showcases the potential of SUEM in characterizing realistic devices.

Magnetocaloric materials, which exploit reversible temperature changes induced by magnetic field variations, are promising for advancing energy-efficient cooling technologies. The potential integration of two-dimensional materials into magnetocaloric systems represents an emerging opportunity to enhance the magnetocaloric cooling efficiency. In this study, we use atomistic spin dynamics simulations based on first-principles parameters to systematically evaluate how magnetocaloric properties transition from three-dimensional (3D) to two-dimensional (2D) ferromagnetic materials. We find that 2D features such as reduced Curie temperature, sharper magnetic transition, and higher magnetic susceptibility are beneficial for magnetocaloric applications, while the relatively higher lattice heat capacity in 2D can compromise achievable adiabatic temperature changes. We further propose GdSi$_2$ as a promising 2D magnetocaloric material near hydrogen liquefaction temperature. Our analysis offers valuable theoretical insights into the magnetocaloric effect in 2D ferromagnets and demonstrates that 2D ferromagnets hold promise for cooling and thermal management applications in compact and miniaturized nanodevices.

Two-dimensional (2D) materials have shown great potential in applications as transistors, where thermal dissipation becomes crucial because of the increasing energy density. Although thermal conductivity of 2D materials has been extensively studied, interactions between nonequilibrium electrons and phonons, which can be strong when high electric fields and heat current coexist, are not considered. In this work, we systematically study the electron drag effect, where nonequilibrium electrons impart momenta to phonons and influence the thermal conductivity, in 2D semiconductors using ab initio simulations. We find that, at room temperature, electron drag can significantly increase thermal conductivity by decreasing phonon-electron scattering in 2D semiconductors, while its impact in three-dimensional (3D) semiconductors is negligible. We attribute this difference to the large electron-phonon scattering phase space and higher contribution to thermal conductivity by drag-active phonons. Our work elucidates the fundamental physics underlying coupled electron-phonon transport in materials of various dimensionalities., Comment: 16 pages, 5 figures

Magnetic cooling based on the magnetocaloric effect is a promising solid-state refrigeration technology for a wide range of applications in different temperature ranges. Previous studies have mostly focused on near room temperature (300 K) and cryogenic temperature (< 10 K) ranges, while important applications such as hydrogen liquefaction call for efficient magnetic refrigerants for the intermediate temperature 10K to 100 K. For efficient use in this range, new magnetocaloric materials with matching Curie temperatures need to be discovered, while conventional experimental approaches are typically time-consuming and expensive. Here, we report a computational material discovery pipeline based on a materials database containing more than 6000 entries auto-generated by extracting reported material properties from literature using a large language model. We then use this database to train a machine learning model that can efficiently predict magnetocaloric properties of materials based on their chemical composition. We further verify the magnetocaloric properties of predicted compounds using ab initio atomistic spin dynamics simulations to close the loop for computational material discovery. Using this approach, we identify 11 new promising magnetocaloric materials for the target temperature range. Our work demonstrates the potential of combining large language models, machine learning, and ab initio simulations to efficiently discover new functional materials.

Topological materials are often associated with exceptional thermoelectric properties. Orthorhombic BaMnSb2 is a topological semimetal consisting of alternating layers of Ba, Sb, and MnSb. A recent experiment demonstrates that BaMnSb2 has a low thermal conductivity and modest thermopower, promising as a thermoelectric material. Through first-principles calculations with Coulomb repulsion and spin-orbit coupling included, we studied the electronic structure, phononic structure, and thermoelectric transport properties of BaMnSb2 in depth. We find that BaMnSb2 exhibits a low lattice thermal conductivity, owing to the scattering of the acoustic phonons with low-frequency optical modes. Using the linearized Boltzmann transport theory with a constant relaxation time approximation, the thermopower is further calculated and an intriguing goniopolar transport behavior, which is associated with both n-type and p-type conduction along separate transport directions simultaneously, is observed. We propose that the figure of merit can be enhanced via doping in which electrical conductivity is decreased while the thermopower remains undiminished. BaMnSb2 is a potential platform for elucidating complex band structure effects and topological phenomena, paving the way to explore rich physics in low-dimensional systems.

Engineering new quantum phases requires fine tuning of the electronic, orbital, spin, and lattice degrees of freedom. To this end, the kagome lattice with flat bands has garnered great attention by hosting various topological and correlated phases, when the flat band is at the Fermi level. Here we discover unconventional nematiciy in kagome metal CoSn, where flat bands are fully occupied below the Fermi level. Thermodynamic, dilatometry, resonant X-ray scattering, inelastic neutron scattering, Larmor diffraction, and thermoelectric measurements consistently hint at rotational symmetry-breaking and nematic order that is pronounced only near T=225 K. These observations, principally the nematic's finite temperature stability -- incipience -- can be explained by a phenomenological model which reveals that thermally excited flat bands promote symmetry breaking at a characteristic temperature. Our work shows that thermal fluctuations, which are typically detrimental for correlated electron phases, can induce new ordered states of matter, avoiding the requirements for fine tuning of electronic bands., Comment: 37 pages, 5 main figures, 14 supplementary figures

Thermal switching materials, whose thermal conductivity can be controlled externally, show great potential in contemporary thermal management. Manipulating thermal transport properties through magnetic fields has been accomplished in materials that exhibit a high magnetoresistance. However, it is generally understood that the lattice thermal conductivity attributed to phonons is not significantly impacted by the magnetic fields. In this study, we experimentally demonstrate the significant impact of phonon-magnon scattering on the thermal conductivity of the rare-earth metal gadolinium near room temperature, which can be controlled by a magnetic field to realize thermal switching. Using first-principles lattice dynamics and spin-lattice dynamics simulations, we attribute the observed change in phononic thermal conductivity to field-suppressed phonon-magnon scattering. This research suggests that phonon-magnon scattering in ferromagnetic materials is crucial for determining their thermal conductivity, opening the door to innovative magnetic-field-controlled thermal switching materials.

Topological insulators and semimetals have been shown to possess intriguing thermoelectric properties promising for energy harvesting and cooling applications. However, thermoelectric transport associated with the Fermi arc topological surface states on topological Dirac semimetals remains less explored. In this work, we systematically examine thermoelectric transport in a series of topological Dirac semimetal Cd3As2 thin films grown by molecular beam epitaxy. Surprisingly, we find significantly enhanced Seebeck effect and anomalous Nernst effect at cryogenic temperatures when the Cd3As2 layer is thin. Combining angle-dependent quantum oscillation analysis, magnetothermoelectric measurement, transport modelling and first-principles simulation, we isolate the contributions from bulk and surface conducting channels and attribute the unusual thermoeletric properties to the topological surface states. Our analysis showcases the rich thermoelectric transport physics in quantum-confined topological Dirac semimetal thin films and suggests new routes to achieving high thermoelectric performance at cryogenic temperatures.

With the ever-growing need to reduce energy consumption, building materials that passively heat or cool are gaining importance. However, many buildings require both heating and cooling, even within the same day. To date, few technologies can automatically switch between passive heating and cooling, and those that can require a large temperature range to cycle states (>15o C), making them ineffective for daily switching. We present a passively adaptive radiative switch that leverages the expansion in phase-change energy storage materials to actuate the motion of louvers and can cycle states in less than 3o C. The black selective-absorber louvers induce high heat gain when closed, yet when open, expose a white, emissive surface for low heat gain. During an outdoor test in which temperature was held steady, our device reduced the energetic cost of cooling by 3.1x and heating by 2.6x compared to non-switching devices. Our concept opens the door for passively adaptive thermoregulating building materials., Comment: 32 pages with supplementary information included

The mechanisms of lithium electrodeposition, which overwhelmingly affect lithium metal battery performance and safety, remain insufficiently understood due to its electrochemical complexity. Novel, non-destructive and in situ techniques to probe electrochemical interfaces during lithium electrodeposition are highly desirable. In this work, we demonstrate the capability of transient grating spectroscopy to monitor lithium electrodeposition at the micrometer scale by generating and detecting surface acoustic waves that sensitively interact with the deposited lithium. Specifically, we show that the evolution of the frequency, velocity and damping rate of the surface acoustic waves strongly correlate with the lithium nucleation and growth process. Our work illustrates the sensitivity of high-frequency surface acoustic waves to micrometer scale changes in electrochemical cells and establishes transient grating spectroscopy as a versatile platform for future in situ investigation of electrochemical inte

Achieving high thermoelectric performance requires efficient manipulation of thermal conductivity and a fundamental understanding of the microscopic mechanisms of phonon transport in crystalline solids. One of the major challenges in thermal transport is achieving ultralow lattice thermal conductivity. In this study, we use the anti-bonding character of the highest-occupied valence band as an efficient descriptor for discovering new materials with an ultralow thermal conductivity. We first examined the relationship between anti-bonding valence bands and low lattice thermal conductivity in model systems PbTe and CsPbBr3. Then, we conducted a high-throughput search in the Materials Project database and identified over 600 experimentally stable binary semi-conductors with a strong anti-bonding character in their valence bands. From our candidate list, we conducted a comprehensive analysis of the chemical bonds and the thermal transport in the XS family, where X=K, Rb, and Cs are alkaline metals. These materials all exhibit ultralow thermal conductivities less than 1 W/(m K) at room temperature despite simple structures. We attributed the ultralow thermal conductivity to the weakened bonds and increased phonon anharmonicity due to their anti-bonding valence bands. Our results provide chemical intuitions to understand lattice dynamics in crystals and open up a convenient venue towards searching for materials with an intrinsically low lattice thermal conductivity., Comment: 23 pages, 5 figures

A thorough understanding of electrical and thermal transport properties of group-III nitride semiconductors is essential for their electronic and thermoelectric applications. Despite extensive previous studies, these transport properties were typically calculated without considering the nonequilibrium coupling effect between electrons and phonons, which can be particularly strong in group-III nitride semiconductors due to the high electric fields and high heat currents in devices based on them. In this work, we systematically examine the phonon drag effect, namely the momentum exchange between nonequilibrium phonons and electrons, and its impact on charge mobility and Seebeck coefficient in GaN and AlN by solving the fully coupled electron and phonon Boltzmann transport equations with ab initio scattering parameters. We find that, even at room temperature, the phonon drag effect can significantly enhance mobility and Seebeck coefficient in GaN and AlN, especially at higher carrier concentrations. Furthermore, we show that the phonon drag contribution to mobility and Seebeck coefficient scale differently with the carrier concentration and we highlight a surprisingly important contribution to the mobility enhancement from the polar optical phonons. We attribute both findings to the distinct mechanisms the phonon drag affects mobility and Seebeck coefficient. Our study advances the understanding of the strong phonon drag effect on carrier transport in wide bandgap GaN and AlN and gives new insights into the nature of coupled electron-phonon transport in polar semiconductors.

Materials with a large magnetocaloric response are highly desirable for magnetic cooling applications. It is suggested that a strong spin-lattice coupling tends to generate a large magnetocaloric effect, but no microscopic mechanism has been proposed. In this work, we use spin lattice dynamics simulation to examine the lattice contribution to the magnetocaloric entropy change in bcc iron (Fe) and hcp gadolinium (Gd) with exchange interaction parameters determined from ab initio calculations. We find that indirect Ruderman Kittel Kasuya Yosida (RKKY) exchange interaction in hcp Gd leads to longer range spin lattice coupling and more strongly influences the low frequency long wavelength phonons. This results in a higher lattice contribution towards the total magnetocaloric entropy change as compared to bcc Fe with short range direct exchange interactions. Our analysis provides a framework for understanding the magnetocaloric effect in magnetic materials with strong spin lattice couplings. Our finding suggests that long range indirect RKKY type exchange gives rise to a larger lattice contribution to the magnetocaloric entropy change and is, thus, beneficial for magnetocaloric materials.

The structure-property relationship plays a central role in materials science. Understanding the structure-property relationship in solid-state materials is crucial for structure design with optimized properties. The past few years witnessed remarkable progress in correlating structures with properties in crystalline materials, such as machine learning methods and particularly graph neural networks as a natural representation of crystal structures. However, significant challenges remain, including predicting properties with complex unit cells input and material-dependent, variable-length output. Here we present the virtual node graph neural network to address the challenges. By developing three types of virtual node approaches - the vector, matrix, and momentum-dependent matrix virtual nodes, we achieve direct prediction of $\Gamma$-phonon spectra and full dispersion only using atomic coordinates as input. We validate the phonon bandstructures on various alloy systems, and further build a $\Gamma$-phonon database containing over 146,000 materials in the Materials Project. Our work provides an avenue for rapid and high-quality prediction of phonon spectra and bandstructures in complex materials, and enables materials design with superior phonon properties for energy applications. The virtual node augmentation of graph neural networks also sheds light on designing other functional properties with a new level of flexibility., Comment: 40 pages total, 4 main figures + 25 supplementary figures

Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics and photo-detectors. While recent experimental studies using scanning ultrafast electron microscopy (SUEM) have demonstrated that the local change in the secondary electron emission induced by photoexcitation enables direct visualization of the photocarrier dynamics in space and time, the origin of the corresponding image contrast still remains unclear. Here, we investigate the impact of photoexcitation on secondary electron emissions from semiconductors using a Monte Carlo simulation aided by time-dependent density functional theory (TDDFT). Particularly, we examine two photo-induced effects: the generation of photo-carriers in the sample bulk, and the surface photovoltage (SPV) effect. Using doped silicon as a model system and focusing on primary electron energies below 1 keV, we found that both the hot photocarrier effect immediately after photoexcitation and the SPV effect play dominant roles in changing the secondary electron yield (SEY), while the distribution of photocarriers in the bulk leads to a negligible change in SEY. Our work provides insights into electron-matter interaction under photo-illumiation and paves the way towards a quantitative interpretation of the SUEM contrasts., Comment: 6 figures

Organic-inorganic hybrid perovskites (OIHPs) exhibiting exceptional photovoltaic and optoelectronic properties are of fundamental and practical interest, owing to their tunability and low manufacturing cost. For practical applications, however, challenges such as material instability and the photocurrent hysteresis occurring in perovskite solar cells under light exposure need to be understood and addressed. While extensive investigations have suggested that ion migration is a plausible origin of these detrimental effects, detailed understanding of the ion migration pathways remains elusive. Here, we report the characterization of photo-induced ion migration in OIHPs using \textit{in situ} laser illumination inside a scanning electron microscope, coupled with secondary electron imaging, energy-dispersive X-ray spectroscopy and cathodoluminescence with varying primary electron energies. Using methylammonium lead iodide (MAPbI$_3$), formamidinium lead iodide (FAPbI$_3$) and hybrid formamidinium-methylammonium lead iodide as model systems, we observed photo-induced long-range migration of halide ions over hundreds of micrometers and elucidated the transport pathways of various ions both near the surface and inside the bulk of the OIHPs, including a surprising finding of the vertical migration of lead ions. Our study provides insights into ion migration processes in OIHPs that can aid OIHP material design and processing in future applications.

A novel meta-heuristic algorithm, Egret Swarm Optimization Algorithm (ESOA), is proposed in this paper, which is inspired by two egret species' (Great Egret and Snowy Egret) hunting behavior. ESOA consists of three primary components: Sit-And-Wait Strategy, Aggressive Strategy as well as Discriminant Conditions. The performance of ESOA on 36 benchmark functions as well as 2 engineering problems are compared with Particle Swarm Optimization (PSO), Genetic Algorithm (GA), Differential Evolution (DE), Grey Wolf Optimizer (GWO), and Harris Hawks Optimization (HHO). The result proves the superior effectiveness and robustness of ESOA. The source code used in this work can be retrieved from https://github.com/Knightsll/Egret_Swarm_Optimization_Algorithm; https://ww2.mathworks.cn/matlabcentral/fileexchange/115595-egret-swarm-optimization-algorithm-esoa., Comment: 10 pages, 5 figures, 6 tables. Source code used for this work is available online: see https://github.com/Knightsll/Egret_Swarm_Optimization_Algorithm and https://ww2.mathworks.cn/matlabcentral/fileexchange/115595-egret-swarm-optimization-algorithm-esoa. This paper has been submitted to MDPI mathematics

Cubic boron arsenide (BAs) is promising for microelectronics thermal management due to its high thermal conductivity. Recently, its potential as an optoelectronic material is also being explored. However, it remains challenging to measure its photocarrier transport properties due to small sizes of available high-quality crystals. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the diffusion of photoexcited charge carriers in BAs single crystals. Surprisingly, we observed ambipolar diffusion at low optical fluence with persistent hot carrier dynamics for above 200 picoseconds, which can be attributed to the large frequency gap between acoustic and optical phonons, the same feature that is responsible for the high thermal conductivity. At higher optical fluence, we observed spontaneous electron-hole separation. Our results show BAs is an attractive optoelectronic material combining high thermal conductivity and excellent photocarrier transport properties. Our study also demonstrates the capability of SUEM to probe photocarrier transport in emerging materials., Comment: 10 pages; 9 figures

Microscale energy transport processes are crucial in microelectronics, energy harvesting devices, and emerging quantum materials. To study these processes, methods that can probe transport with conveniently tunable length scales are highly desirable. Transient grating spectroscopy (TGS) is such a tool that can monitor microscale energy transport processes associated with various fundamental energy carriers including electrons, phonons, and spins. Having been developed and applied for a long time in the chemistry community, TGS has regained popularity recently in studying different transport regimes in solid-state materials. In this Tutorial, we provide an in-depth discussion of the operational principle and instrumentation details of a modern heterodyne TGS configuration from a practitioner's point of view. We further review recent applications of TGS in characterizing microscale transport of heat, charge, spin, and acoustic waves, with an emphasis on thermal transport., Comment: 44 pages, 11 figures. Comments are welcome

Understanding the opto-electronic properties of semiconducting polymers under external strain is essential for their applications in flexible opto-electronic, light-emitting and photovoltaic devices. While prior studies have highlighted the impact of static strains applied on a macroscopic length scale, assessing the effect of a local transient deformation before structural relaxation occurs is challenging due to the required high spatio-temporal resolution. Here, we employ scanning ultrafast electron microscopy (SUEM) to image the dynamical effect of a photo-induced transient strain in the archetypal semiconducting polymer poly(3-hexylthiophene) (P3HT). We observe that the photo-induced SUEM contrast, corresponding to the local change of secondary electron emission, exhibits a ring-shaped spatial profile with a rise time of $\sim 300$ ps, beyond which the profile persists in the absence of a spatial diffusion. We attribute the observation to the electronic structure modulation of P3HT caused by a photo-induced strain field owing to its relatively low modulus and strong electron-lattice coupling, as supported by a finite-element analysis. Our work provides insights into tailoring opto-electronic properties using transient mechanical deformation in semiconducting polymers, and demonstrates the versatility of SUEM to study photo-physical processes in diverse materials.

Soft heat engines are poised to play a vital role in future soft robots due to their easy integration into soft structures and low-voltage power requirements. Recent works have demonstrated soft heat engines relying on liquid-to-gas phase change materials. However, despite the fact that many soft robots have air as a primary component, soft air cycles are not a focus of the field. In this paper, we develop theory for air-based soft heat engines design and efficiency, and demonstrate experimentally that efficiency can be improved through careful cycle design. We compare a simple constant-load cycle to a designed decreasing-load cycle, inspired by the Otto cycle. While both efficiencies are relatively low, the Otto-like cycle improves efficiency by a factor of 11.3, demonstrating the promise of this approach. Our results lay the foundation for the development of air-based soft heat engines as a new option for powering soft robots., Comment: IROS 2021 Conference submission

Van der Waals materials exhibit naturally passivated surfaces and can form versatile heterostructures, enabling observation of carrier transport mechanisms not seen in three-dimensional materials. Here we report observation of a "band bending junction", a new type of semiconductor homojunction whose surface potential landscape depends solely on a difference in thickness between the two semiconductor regions atop a buried heterojunction interface. Using MoS2 on Au to form a buried heterojunction interface, we find that lateral surface potential differences can arise in MoS2 from the local extent of vertical band bending in thin and thick MoS2 regions. Using scanning ultrafast electron microscopy, we examine the spatiotemporal dynamics of photogenerated charge carriers and find that lateral carrier separation is enabled by a band bending junction, which is confirmed with semiconductor transport simulations. Band bending junctions may therefore enable new electronic and optoelectronic devices in Van der Waals materials that rely on thickness variations rather than doping to separate charge carriers., Comment: 16 pages, 4 figures

Anharmonic phonon-phonon scattering serves a critical role in heat conduction in solids. Previous studies have identified many selection rules for possible phonon-phonon scattering channels imposed by phonon energy and momentum conservation conditions and crystal symmetry. However, the crystal-symmetry-based selection rules have mostly been \textit{ad hoc} so far in selected materials, and a general formalism that can summarize known selection rules and lead to new ones in any given crystal is still lacking. In this work, we apply a general formalism for symmetry-based scattering selection rules based on the group theory to anharmonic phonon-phonon scatterings, which can reproduce known selection rules and guide the discovery of new selection rules between phonon branches imposed by the crystal symmetry. We apply this formalism to analyze the phonon-phonon scattering selection rules imposed by the in-plane symmetry of graphene, and demonstrate the significant impact of symmetry-breaking strain on the lattice thermal conductivity. Our work quantifies the critical influence of the crystal symmetry on the lattice thermal conductivity in solids and suggests routes to engineer heat conduction by tuning the crystal symmetry., Comment: 26 pages, 9 figures. Comments are welcome

Gallium nitride (GaN), a wide band-gap semiconductor, has been broadly used in power electronic devices due to its high electron mobility and high breakdown voltage. Its relatively high thermal conductivity makes GaN a favorable material for such applications, where heat dissipation is a major concern for device efficiency and long-term stability. However, in GaN-based transistors, where the active region can withstand extremely strong electric fields, the field effect on the thermal transport properties has drawn little attention so far. In this work, we apply first-principles methods to investigate phonon properties of wurtzite GaN in the presence of a near-breakdown electric field applied along different crystallographic directions. We find that the electric field changes thermal conductivity considerably via impacting the bond stiffness and ionicity as well as the crystal symmetry, although it has little effect on phonon dispersions. The presence of an out-of-plane electric field increases (decreases) the thermal conductivity parallel (perpendicular) to the electric field, which is attributed to different changes of the Ga-N bond stiffness and ionicity. When an in-plane electric field is applied, the sizable decrease of thermal conductivities along all directions is attributed to the crystal symmetry breaking that enhances the phonon-phonon scattering. Our study provides insights into the effect of extreme external electric fields on phonon transport properties in wide-gap semiconductors., Comment: 9 pages, 7 figures. Comments are welcome

A thorough understanding of the microscopic picture of heat conduction in solids is critical to a broad range of applications, from thermal management of microelectronics to more efficient thermoelectric materials. The transport properties of phonons, the major microscopic heat carriers in semiconductors and insulators, particularly their scattering mechanisms, have been a central theme in microscale heat conduction research. In the past two decades, significant advancements have been made in computational and experimental efforts to probe phonon-phonon, phonon-impurity, and phonon-boundary scattering channels in detail. In contrast, electron-phonon scatterings were long thought to have negligible effects on thermal transport in most materials under ambient conditions. This article reviews the recent progress in first-principles computations and experimental methods that show clear evidence for a strong impact of electron-phonon interaction on phonon transport in a wide variety of technologically relevant solid-state materials. Under thermal equilibrium conditions, electron-phonon interactions can modify the total phonon scattering rates and renormalize the phonon frequency, as determined by the imaginary part and the real part of the phonon self-energy, respectively. Under nonequilibrium transport conditions, electron-phonon interactions can affect the coupled transport of electrons and phonons in the bulk through the "phonon or electron drag" mechanism as well as the interfacial thermal transport. Based on these recent results, we evaluate the potential use of electron-phonon interactions to control thermal transport in solids. We also provide an outlook on future directions of computational and experimental developments., Comment: 23 pages, 5 figures. Comments are welcome

While charge carrier dynamics and thermal management are both keys to the operational efficiency and stability for energy-related devices, experimental techniques that can simultaneously characterize both properties are still lacking. In this paper, we use laser-induced transient grating (TG) spectroscopy to characterize thin films of the archetypal organic semiconductor regioregular poly(3-hexylthiophene) (P3HT) and its blends with the electron acceptor [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) on glass substrates. While the thermal response is determined to be dominated by the substrates, we show that the recombination dynamics of photocarriers in the organic semiconductor thin films occur on a similar timescale and can be separated from the thermal response. Our measurements indicate that the photocarrier dynamics are determined by multiple recombination processes and our extracted recombination rates are in good agreement with previous reports using other techniques. We further apply TG spectroscopy to characterize another conjugated polymer and a molecular fluorescent material to demonstrate its general applicability. Our study indicates the potential of transient grating spectroscopy to simultaneously characterize thermal transport and photocarrier dynamics in organic optoelectronic devices., Comment: 18 pages; 5 Figures

Topological phase transitions occur when the electronic bands change their topological properties, typically featuring the closing of the bandgap. While the influence of topological phase transitions on electronic and optical properties has been extensively studied, its implication on phononic properties and thermal transport remains unexplored. In this work, we use first-principles simulations to show that certain phonon modes are significantly softened near topological phase transitions, leading to increased phonon-phonon scattering and reduced lattice thermal conductivity. We demonstrate this effect using two model systems: pressure-induced topological phase transition in $\rm ZrTe_5$ and chemical composition induced topological phase transition in $\rm{Hg_{1-x}Cd_{x}Te}$. We attribute the phonon softening to emergent Kohn anomalies associated with the closing of the bandgap. Our study reveals the strong connection between electronic band structures and lattice instabilities and opens up a potential direction towards controlling heat conduction in solids., Comment: 8 pages, 5 figures. Comments are welcome

The perturbation of a semiconductor from the thermodynamic equilibrium often leads to the display of nonlinear dynamics and formation of spatiotemporal patterns due to the spontaneous generation of competing processes. Here, we describe the ultrafast imaging of nonlinear carrier transport in silicon, excited by an intense femtosecond laser pulse. We use scanning ultrafast electron microscopy (SUEM) to show that, at a sufficiently high excitation fluence, the transport of photoexcited carriers slows down by turning into an oscillatory process. We attribute this nonlinear response to the electric field, generated by the spatial separation of these carriers under intrinsic and photo-induced fields; we then provide an advection-diffusion model that mimics the experimental observation. Our finding provides a direct imaging evidence for the electrostatic oscillation of hot carriers in highly excited semiconductors and offers new insights into their spatiotemporal evolution as the equilibrium is recovered.

Recently, Cd3As2 has attracted intensive research interest as an archetypical Dirac semimetal, hosting three-dimensional linear-dispersive electronic bands near the Fermi level. Previous studies have shown that single-crystalline Cd3As2 has an anomalously low lattice thermal conductivity, ranging from 0.3 W/mK to 0.7 W/mK at 300 K, which has been attributed to point defects. In this work, we combine first-principles lattice dynamics calculations and temperature-dependent high-resolution Raman spectroscopy of high-quality single-crystal thin films grown by molecular beam epitaxy to reveal the existence of a group of soft optical phonon modes at the Brillouin zone center of Cd3As2. These soft phonon modes significantly increase the scattering phase space of heat-carrying acoustic phonons and are the origin of the low lattice thermal conductivity of Cd3As2. Furthermore, we show that the interplay between the phonon-phonon Umklapp scattering rates and the soft optical phonon frequency explains the unusual non-monotonic temperature dependence of the lattice thermal conductivity of Cd3As2. Our results further suggest that the soft phonon modes are potentially induced by a Kohn anomaly associated with the Dirac nodes, in analogy to similar, nonetheless weaker, effects in graphene and Weyl semimetals., Comment: 7 pages, 4 figure. Comments are welcome

In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (Cd$_3$As$_2$), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of Cd$_3$As$_2$ thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown Cd$_3$As$_2$ promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.

Phonon scattering by electrons, or "phonon-electron scattering", has been recognized as a significant scattering channel for phonons in materials with high electron concentration, such as thermoelectrics and nanoelectronics, even at room temperature. Despite the abundant previous studies of phonon-electron scattering in different types of three-dimensional (3D) bulk materials, its impact on the phonon transport, and thus the heat transfer properties, of two-dimensional (2D) materials has not been understood. In this work, we apply ab initio methods to calculate the phonon-electron scattering rates in two representative 2D materials, silicene and phosphorene, and examine the potential of controlling the thermal conductivity of these materials via externally induced phonon-electron scattering by electrostatic gating. We also develop an analytical model to explain the impact of reduced dimensionality and distinct electron and phonon dispersions in 2D on phonon-electron scattering processes. We find that over 40\% reduction of the lattice thermal conductivity can be achieved in silicene with an induced charge carrier concentration in the range of $10^{13}~cm^{-2}$, which is experimentally achievable. Our study not only generates new fundamental insights into phonon transport in 2D materials but also provides practical guidelines to search for 2D materials with strong phonon-electron scattering for potential thermal switching applications., Comment: 21 pages, 6 figures

Coherent wave effects of thermal phonons hold promise of transformative opportunities in thermal transport control but remain largely unexplored due to the small wavelength of thermal phonons, typically below a few nanometers. This small length scale indicates that, instead of artificial phononic crystals, a more promising direction is to examine the coherent phonon effects in natural materials with hierarchical superstructures matching the thermal phonon wavelength. In this work, we use first-principles simulations to characterize the previously unstudied thermal properties of D-graphene and T-graphene, two-dimensional carbon allotropes based upon the traditional graphene structure but containing a secondary, in-plane periodicity. We find that despite very similar atomic structure and bonding strength, D-graphene and T-graphene possess significantly different thermal properties than that of pristine graphene. At room temperature, the calculated thermal conductivity of D-graphene and T-graphene is 600 Wm-1K-1 and 800 Wm-1K-1 compared to over 3000 Wm-1K-1 for graphene. We attribute these distinct properties to the presence of naturally occurring, low frequency optical phonon modes that display characteristics of phonon coherence and arise from a folding of the acoustic modes and the associated frequency gap opening, a phenomenon also found in superlattices where an out of plane periodicity is introduced. Furthermore, we observe significantly enhanced Umklapp scatterings in D- and T-graphene that largely suppress the hydrodynamic phonon transport in pristine graphene. Our study presents D-graphene and T-graphene as ideal model systems to explore the coherent phonon effects in 2D and demonstrates the potential of using coherent phonon effects to significantly modify thermal transport of 2D materials without making drastic changes to their fundamental compositions., Comment: 19 pages, 4 figures, 1 table

Epitaxial growth of III-V semiconductors on Si is a promising route for silicon photonics. Threading dislocations and the residual thermal stress generated during growth are expected to affect the thermal conductivity of the III-V semiconductors, which is crucial for efficient heat dissipation from photonic devices built on this platform. In this work, we combine a non-contact laser-induced transient thermal grating technique with ab initio phonon simulations to investigate the in-plane thermal transport of epitaxial GaAs-based buffer layers on Si, employed in the fabrication of III-V quantum dot lasers. Surprisingly, we find a significant reduction of the in-plane thermal conductivity of GaAs, up to 19%, as a result of a small in-plane biaxial stress of 250 MPa. Using ab initio phonon calculations, we attribute this effect to the enhancement of phonon-phonon scattering caused by the in-plane biaxial stress, which breaks the cubic crystal symmetry of GaAs. Our results indicate the importance of eliminating the residual thermal stress in the epitaxial III-V layers on Si to avoid the reduction of thermal conductivity and facilitate heat dissipation. Additionally, our results showcase potential means of effectively controlling thermal conductivity of solids with external strain/stress., Comment: 8 pages, 8 figures

Crystalline materials with ultralow thermal conductivity are highly desirable for thermoelectric applications. Many known crystalline materials with low thermal conductivity, including PbTe and Bi2Te3, possess a special kind of chemical bond called "resonant bond". Resonant bonds consist of superposition of degenerate bonding configurations that leads to structural instability, anomalous long-range interatomic interaction and soft optical phonons. These factors contribute to large lattice anharmonicity and strong phonon-phonon scattering, which result in low thermal conductivity. In this work, we use first-principles simulation to investigate the effect of resonant bonding in two dimensions (2D), where resonant bonds are in proximity to the surface. We find that the long-range interatomic interaction due to resonant bonding becomes more prominent in 2D due to reduced screening of the atomic-displacement-induced charge density distortion. To demonstrate this effect, we analyze the phonon properties of quasi-2D Bi2PbTe4 with an ultralow thermal conductivity of 0.74 W/mK at 300K. By comparing the interatomic force constants of quasi-2D Bi2PbTe4 and its bulk counterpart, and the properties of resonant bonds near the surface and in the bulk, we conclude that resonant bonds are significantly enhanced in reduced dimensions and are more effective in reducing the lattice thermal conductivity. Our results will provide new clues to searching for thermal insulators in low-dimensional materials., Comment: 14 pages,6 figures

In this paper, we examine the application of an ideal phonon-hydrodynamic material as the heat transfer medium between two non-hydrodynamic contacts with a finite temperature difference. We use the integral-equation approach to solve a modified phonon Boltzmann transport equation with the displaced Bose-Einstein distribution as the equilibrium distribution between two boundaries perpendicular to the heat transfer direction. When the distance between the boundaries is smaller than the phonon normal scattering mean free path, our solution converges to the ballistic limit as expected. In the other limit, we find that, although the local thermal conductivity in the bulk of the hydrodynamic material approaches infinity, the thermal boundary resistance at the hydrodynamic/non-hydrodynamic interfaces becomes dominant. Our study provides insights to both the steady-state thermal characterization of phonon-hydrodynamic materials and the practical application of phonon-hydrodynamic materials for thermal management., Comment: 7 pages, 5 figures

The hotness of the sun and the coldness of the outer space are inexhaustible thermodynamic resources for human beings. From a thermodynamic point of view, any energy conversion systems that receive energy from the sun and/or dissipate energy to the universe are heat engines with photons as the "working fluid" and can be analyzed using the concept of entropy. While entropy analysis provides a particularly convenient way to understand the efficiency limits, it is typically taught in the context of thermodynamic cycles among quasi-equilibrium states and its generalization to solar energy conversion systems running in a continuous and non-equilibrium fashion is not straightforward. In this educational article, we present a few examples to illustrate how the concept of photon entropy, combined with the radiative transfer equation, can be used to analyze the local entropy generation processes and the efficiency limits of different solar energy conversion systems. We provide explicit calculations for the local and total entropy generation rates for simple emitters and absorbers, as well as photovoltaic cells, which can be readily reproduced by students. We further discuss the connection between the entropy generation and the device efficiency, particularly the exact spectral matching condition that is shared by infinite-junction photovoltaic cells and reversible thermoelectric materials to approach their theoretical efficiency limit., Comment: 22 pages, 5 figures

The dynamics of photo-excited charge carriers, particularly their transport and interactions with defects and interfaces, play an essential role in determining the performance of a wide range of solar and optoelectronic devices. A thorough understanding of these processes requires tracking the motion of photocarriers in both space and time simultaneously with extremely high resolutions, which poses a significant challenge for previously developed techniques, mostly based on ultrafast optical spectroscopy. Scanning ultrafast electron microscopy (SUEM) is a recently developed photon-pump-electron-probe technique that combines the spatial resolution of scanning electron microscopes (SEM) and the temporal resolution of femtosecond ultrafast lasers. Despite many recent excellent reviews for the ultrafast electron microscopy, we dedicate this article specifically to SUEM, where we review the working principle and contrast mechanisms of SUEM in the secondary-electron-detection mode from a users' perspective and discuss the applications of SUEM to directly image photocarrier dynamics in various materials. Furthermore, we propose future theoretical and experimental directions for better understanding and fully utilizing the SUEM measurements to obtain detailed information about the dynamics of photocarriers. To conclude, we envision the potential of expanding SUEM into a versatile platform for probing photophysical processes beyond photocarrier dynamics., Comment: 23 pages, 6 figures