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12. Quasi-1-Dimensional Dual-Gate MoS2 Field-Effect Transistors with 50 nm Channel Length.

Author

Zhou, Yuchen, Yoon, Chankeun, Vasishta, Sudhanva, Xu, Xin, Liang, Kelly, and Dodabalapur, Ananth

Abstract

Quasi-1-dimensional dual-gate MoS2 field-effect transistors (FETs) are demonstrated with channels composed of an array of nanospike source/drain electrodes. This geometry creates an effect of electric field tailoring and can laterally confine the conducting channel into charge nanoribbons. Due to effective lateral charge confinement below threshold, MoS2 transistors with 50 nm channel length show greatly improved gate control when compared to conventional FETs with flat edge source/drain electrodes of the same channel length. The device design also results in reduced drain induced barrier lowering and high intrinsic gain of 91 dB. Patterning of the source/drain electrodes into an array of nanospikes results in a reduction of charge injection perimeter without significant change in on-current and contact resistance. More importantly, these advantages are achieved without etching the semiconductor into nanoribbons, which typically results in enhanced scattering. The proposed device geometry is well suited for scaling down to channel lengths much smaller than 50 nm, especially when used with symmetric double gating or single gate FETs with high-k gate dielectrics. [ABSTRACT FROM AUTHOR]

Published
2023
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15. Nanostructuring approaches to altering and enhancing performance characteristics of thin-film transistors

Author

Liang, Kelly (Ph. D. In Electrical And Computer Engineering) and 0000-0002-6335-4223

Subjects
Flexible electronics, Polymer semiconductor, Thin-film transistor, Thin-film transistor, TFT, Back-end-of-the-line, Disordered semiconductors, Nanospike, BEOL, Flexible transistor, Amorphous metal oxide, Device engineering, Nanostripe
Abstract

Nanostructured thin-film transistor (TFT) designs and approaches in this work have been shown to enhance transistor characteristics across many semiconductor materials. We highlight two nanostructuring approaches, including nanostripe patterning of the transistor channel and nanospike patterning of the source and drain electrodes. Both nanostructuring techniques are shown to alter and improve transistor performance by (i) enhancing gate control which improves subthreshold characteristics, (ii) enhancing electric fields and carrier concentrations near the source contact to improve carrier injection, and (iii) redistributing the carrier concentrations within the channel resulting in enhanced concentrations in narrow channels designated as charge nanoribbons. Nanostripe-patterning of semiconductor channels was studied with technology computer-assisted design (TCAD) software and shown to enhance transistor drive currents over unpatterned channels by greater than a factor of 11 and showed that the nanostripe patterning of the semiconductor channel resulted in reduced short channel effects and significantly improved gate control. The advantages of nanostripe channel patterning were also demonstrated experimentally and showed enhancement of carrier mobility by a factor of 2. Nanospike-patterning of the metal source and drain electrode TFTs were also explored and shown, through experimental studies and simulation studies, to substantially improve the performance of TFTs, especially at short channel lengths and also below threshold. Inspired by field emission contacts and our nanostripe work, the sharp tip of the nanospike electrodes focus electric fields and produces field-emission enhanced carrier injection from the nanospike source and drain contacts, leading to higher drive currents, carrier densities, and carrier velocities. Nanospike electrodes also facilitate quasi-three-dimensional gate control, especially at low gate voltage conditions. This leads to significantly improved subthreshold characteristics and reduced subthreshold dependence on drain voltage, especially at short channel lengths. While nanospike electrode TFTs do not have physically patterned semiconductor regions as nanostripe TFTs, nanospike electrode TFTs also form charge nanoribbons at high drain voltages which similarly facilitates superior gate control over the full channel. Both nanostripe semiconductor TFTs and nanospike electrode TFTs are promising approaches that are compatible with many thin-film semiconductor materials, fabrication methods, and design strategies. These nanostructuring strategies can improve processing speed and performance while reducing power consumption when applied to flexible electronic systems or in back-end-of-the-line circuits.

Published
2022
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19. Advantages of adding a weak second gate in sub-micron bottom-contact organic thin film transistors.

Author

Yoon, Chankeun, Zhou, Yuchen, McCulley, Calla M., Liang, Kelly, and Dodabalapur, Ananth

Subjects
ORGANIC thin films, THIN film transistors, ORGANIC field-effect transistors, METALLIC glasses, SPIN coating, THRESHOLD voltage, METALLIC oxides
Abstract

It is shown that in bottom gate, bottom-contact sub micrometer organic thin-film transistors (TFTs) with Dinaphtho[2,3-b:2′,3′-f]thieno-[3,2-b]thiophene active semiconductors, the addition of a top gate results in substantial improvements in a whole range of electrical performance characteristics. These improvements are not due to additional charge induced by the top gate but originate from the spatial redistribution of the charge induced by the bottom gate by the top gate. In the TFTs described in this work, the bottom gate insulator consists of a bilayer of SiO2 and solution-deposited high-k ZrO2, while the top gate insulator is a relatively thick CYTOP® layer deposited from a solution by spin coating. The capacitances per unit area of the bottom gate insulator and top gate insulator are 87 and 8 nF/cm2, respectively. On account of this large difference, the top gate is referred to as "weak," as its ability to induce charges in the channel is very much limited. The use of a weak top gate is shown to result in large improvements in the on-state drain current, sub-threshold swing, threshold voltage, and contact resistance compared to single gate operation. Weak top gates are especially useful when processing constraints make it difficult to realize symmetric or close to symmetric dual gate designs. While this demonstration is for a specific materials system, the design principle is more general and is likely to benefit a range of short channel length TFTs including organic/polymer, amorphous metal oxide, and 2D semiconductor-based transistors. [ABSTRACT FROM AUTHOR]

Published
2023
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39. Colaboradores

Author

Abbott, Jinnette Dawn, Agarwal, Rajiv, Al-Badri, Marwa, Ali, Hyeon-Ju Ryoo, Aliotta, Jason M., Almhanna, Khaldoun, Al-Qaisi, Mohanad T., Arzomand, Zuhal, Asombang, Akwi W., Aung, Su N., Azzoli, Christopher G., Bandera, Christina, Banerjee, Debasree, Batheja, Mashal, Bazarian, Jeffrey J., Benbadis, Selim R., Benjamin, Ivor J., Benoit, Eric, Berger, Marcie G., Bergwitz, Clemens, Berliner, Nancy, Berns, Jeffrey S., Bhadbhade, Pooja, Bhavaraju-Sanka, Ratna, Bichile, Tanmayee, Birnbaum, Ariel E., Bliss, Charles M., Jr., Blum, Andrew S., Bonder, Bryan J., Bratman, Russell, Braunstein, Glenn D., Bready, Alma M. Guerrero, Bungiro, Richard, Burgner, Anna Marie, Cahill, Jonathan, Canakis, Andrew, Carneiro, Benedito A., Casserly, Brian, Chahin, Abdullah, Chan, Philip A., Chapin, Kimberle, Cheshire, William P., Jr., Chung, Waihong, Ciafaloni, Emma, Cigarroa, Joaquin E., Cinquegrani, Michael P., Coca, Andreea, Cohen, Harvey Jay, Cohen, Scott, Concepcion, Beatrice P., Connell, Nathan T., Constantinou, Maria, Cortez, Roberto, Counihan, Timothy J., Cross, Anne Haney, Cunha, Cheston B., Cunha, Joanne S., Cu-Uvin, Susan, Dabbouseh, Noura M., Dapaah-Afriyie, Kwame, Denney-Koelsch, Erin M., De Souza, Andre, De Vriese, An S., Dharmadhikari, Neal D., Dickstein, Leah, Dizon, Don, Domsic, Robyn T., Eagle, Kim A., Earing, Michael G., Egan, Pamela, El-Deiry, Wafik S., Elkind, Mitchell S.V., Evans, Tarra B., Fallon, Michael B., Farmakiotis, Dimitrios, Farraye, Francis A., Farrell, Ronan, Fenton, Mary Anne, Fervenza, Fernando C., Fine, Sean, Finn, Arkadiy, Flanigan, Timothy, Flores, Brisas M., Foderaro, Andrew E., Friedman, Theodore C., Garland, Joseph Metmowlee, Gartman, Eric J., Geara, Abdallah, Gil, Raul Macias, Gilligan, Timothy, Goggins, Michael Raymond, Gopalakrishnan, Geetha, Gopinath, Vidya, Greenspan, Susan L., Hamdy, Osama, Hamel, Johanna, Handa, Sajeev, Heflin, Mitchell T., Holloway, Robert G., Huang, Christopher S., Hussain, Zilla, Ikizler, T. Alp, Isufi, Iris, Jackson, Carlayne E., Jacob, Paul G., Jankowich, Matthew D., Johnsen, Niels V., Johnson, Jessica E., June, Rayford R., Kheirbek, Tareq, Khorana, Alok A., Kilic, Sena, Kim, David, Kleczka, James, Klinger, James R., Koo, Patrick, Koolwal, Pooja, Kotlarczyk, Mary P., Kuderer, Nicole M., Kwara, Awewura, Kwon, Jennifer M., Lange, Richard A., Larkin, Jerome, Lee, Alfred I., Levine, Daniel J., Lewandowski, David E., Liang, Kelly V., Liang, Kimberly P., Lichtenstein, David R., Lienesch, Douglas W., Ling, Geoffrey S.F., Little, Ester, Liu, Yi, Lohr, Nicole L., Lonks, John R., Lyman, Gary H., Lyness, Jeffrey M., Lyons, Shane, Maas, Diana, Malik, Talha A., Manocha, Sonia, Manzi, Susan, Marshall, Frederick J., McCool, F. Dennis, McCulloh, Russell J., McGarry, Kelly, Govern, Eavan Mc, McKinney, Robin L., Mega, Anthony, Mehta, Shivang, Milam, Douglas F., Mileno, Maria D., Misra, Abhinav Kumar, Moe, Orson W., Mohan, Niveditha, Moreland, Larry W., Morrison, Alan R., Moss, Steven F., Mullin, Christopher J., Murphy, Sinéad M., Nallu, Sagarika, Neyra, Javier A., Noaiseh, Ghaith, Ollila, Thomas A., Opal, Steven M., Palmer, Biff F., Pan, Jen Jung, Papazoglou, Anna, Parnes, Aric, Patel, Nayan M., Pelcovits, Ari, Perazella, Mark A., Picco, Michael F., Powers, Kate E., Previll, Laura A., Rajora, Nilum, Ramirez-Zamora, Adolfo, Reagan, John, Reece, Rebecca, Rich, Harlan, Richman, Jennifer H., Rogers, Lisa R., Rogers, Ralph, Rose, Michal G., Roth, James A., Rounds, Sharon, Rubenstein, Jason C., Rupawala, Abbas, Sarvaideo, Jenna, Saxena, Ramesh, Schiffman, Fred J., Schneider, Ruth B., Seaborg, Kristin A., Seetharam, Anil, Seropian, Stuart, Sethi, Jigme Michael, Sethi, Sanjeev, Shane, Elizabeth, Sharma, Esseim, Shastri, Shani, Shea, Barry S., Shevell, Lauren, Smith, Joseph A., Jr., Smith, Robert J., Sohal, Davendra P.S., Song, Christopher, Sperry, Thomas, Statland, Jeffrey M., Stein, Emily M., Strande, Jennifer L., Strenger, Rochelle, Talbot, Thomas R., Tarolli, Christopher G., Tarshish, Yael, Taunk, Pushpak, Tsoukas, Philip, Tunkel, Allan R., Turner, Jeffrey M., Vazquez, Zoe G.S., Vela, Stacie A.F., Vespa, Paul M., Vongpatanasin, Wanpen, Walker, Marcella D., Wang, Eunice S., Wasan, Sharmeel K., Weber, Thomas J., Wilcoxson, Brandon J., Wing, Edward J., Wong, Ellice, Wysolmerski, John J., Yousefzai, Rayan, Ziegler, Thomas R., and Zon, Rebecca

Published
2022
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44. African migrants in China: space, race and embodied encounters in Guangzhou, China.

Author

Liang, Kelly and Le Billon, Philippe

Subjects
*AFRICANS, *CITIES & towns, *RACIALIZATION, *RACE relations
Abstract

This paper examines 'intimate geographies' of everyday social encounters between African migrants and Chinese residents in Guangzhou, China. Based on interviews in an urban area represented as an 'African enclave', we document some of the banal, everyday sensory and corporeal encounters relating to housing, mobility, food, gender and trade. We suggest that African migration does not easily constitute an economic and cultural 'bridge' facilitating comprehension and appreciation between ordinary Chinese and Africans. Rather, we find racialized 'Othering' of African migrants to be a prevalent feature of encounters. We also find that African migrants are not voiceless and passive but proactive in questioning these views and practices, and in seeking to expand and deepen economic and broader social ties. These findings point to the importance of sensory perceptions and corporeal practices shaping racialization in many spheres of life, but do not preclude some forms of cultural bridging and positive interactions, demonstrating the ambivalences of embodied encounters in a globalizing city. [ABSTRACT FROM AUTHOR]

Published
2020
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