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Your search keyword '"Li-Sheng Deng"' showing total 5 results
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5 results on '"Li-Sheng Deng"'

2. Hygroscopic additive-modified magnesium sulfate thermochemical material construction and heat transfer numerical simulation for low temperature energy storage

Author

Shi-Jie Li, Xiang-Yu Yang, Li-Sheng Deng, Yong-Chun Fu, Ming-Jun Pang, Ti Dong, Yi-Song Yu, Ling-Na Su, and Shang Jiang

Subjects
General Chemical Engineering, General Chemistry
Abstract

In this research, the core objective is to explore the effect of super-absorbent polymer material (poly(sodium acrylate)) on the heat storage performance of magnesium sulfate and to investigate the heat transfer behavior of 13X-zeolite, nano-aluminum oxide (nano-Al

Published
2022

3. Stereocontrolled and convergent total synthesis of amphidinolide T3

Author

Li-Sheng Deng, Xiao-Ping Huang, and Gang Zhao

Subjects
Oxidation-reduction reaction -- Analysis, Glutamate -- Chemical properties, Stereochemistry -- Analysis, Biological sciences, Chemistry
Abstract

A description is provided of stereocontrolled and convergent total synthesis of amphidinolide T3. The construction of a retrosynthetic scheme led to the recognition of readily available and enantiomerically related compounds as starting materials for the total synthesis of amphidinolide T3.

Published
2006

4. Growth of GaAs on Si by Using a Thin Si Film as Buffer Layer

Author

Xiao-jun Jin, Zhi-bo Xiao, Maosheng Hao, Lianxi Zheng, Xiong-wei Hu, J.B Liang, Li-sheng Deng, and Yu-tian Wang

Subjects
Crystallinity, Full width at half maximum, Photoluminescence, Materials science, business.industry, Transmission electron microscopy, General Physics and Astronomy, Optoelectronics, Chemical vapor deposition, business, Layer (electronics), Amorphous solid, Molecular beam epitaxy
Abstract

We report a novel technique for growing high-quality GaAs on Si substrate. The process involves deposition of a thin amorphous Si film prior to the conventional two-step growth. The GaAs layers grown on Si by this technique using metalorganic chemical vapor deposition exhibit a better surface morphology and higher crystallinity as compared to the samples grown by conventional two-step method. The full width at half maximum (FWHM) of the x-ray (004) rocking curve for 2.2 μm thick GaAs/Si epilayer grown by using this new method is 160 arcsec. The FWHM of the photoluminescence spectrum main peak for this sample is 2.1 meV. These are among the best results reported so far. In addition, the mechanism of this new growth method was studied using high-resolution transmission electron microscopy.

Published
1996

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