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1. Integrated Treatment Technology of Rural Domestic Sewage

2. Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors

3. Thermionic emission or tunneling? The universal transition electric field for ideal Schottky reverse leakage current in $\beta$-Ga$_{2}$O$_{3}$

6. Field-Effect Transistors 5 : Vertical Ga2O3 Fin-Channel Field-Effect Transistors and Trench Schottky Barrier Diodes

7. Electric field induced migration of native point defects in Ga2O3 devices.

16. Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV

17. Photoelectric Generation Coefficient of B‐Gallium Oxide during Exposure to High‐Energy Ionizing Radiation

18. β-Gallium oxide power electronics

24. Improved Vertical β-Ga2O3 Schottky Barrier Diodes With Conductivity-Modulated p-NiO Junction Termination Extension

26. Atomic-scale ferroic HfO2-ZrO2 superlattice gate stack for advanced transistors

27. Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements

34. Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction

37. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz

38. Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

41. Evolutionary de Winter pattern: from STEMI to de Winter ECG—a case report.

42. Breakdown Mechanisms in β -Ga 2 O 3 Trench-MOS Schottky-Barrier Diodes.

43. Thermal design of multi-fin Ga2O3 vertical transistors.

44. Ultrathin ferroic HfO2–ZrO2superlattice gate stack for advanced transistors

45. Breakdown Walkout in Polarization-Doped Vertical GaN Diodes

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