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The gas-phase metallicity distribution within galaxies records critical information about galactic evolution. In this work we investigate how active galactic nuclei (AGN) influence this distribution by measuring the two-point correlation functions of gas-phase metallicity in 95 non-AGN and 37 AGN-host galaxies from the Calar Alto Legacy Integral Field spectroscopy Area integral field spectrographic survey. We measure metallicity using a novel Bayesian method that properly includes both stellar and AGN contributions to emission line fluxes and allows us to measure metallicities in both AGN-host and non-AGN galaxies in a single, consistent framework. We find that the two-point correlation functions of both AGN-host and non-AGN galaxies are well-fit by a simple injection-diffusion model, and that the correlation lengths $l_\mathrm{corr}$ we derive for the non-AGN galaxies are reasonably consistent with those obtained in earlier work. The AGN-host galaxies generally have smaller $l_\mathrm{corr}$ than non-AGN galaxies at fixed stellar mass, but similar $l_\mathrm{corr}$ at fixed star formation rate (SFR), suggesting that the primary effect of hosting an AGN in this sample is a reduction in SFR at fixed stellar mass, and that this in turn suppresses the correlation length. Our findings further indicate that, while both SFR and stellar mass are positively correlated with metallicity correlation length $l_\mathrm{corr}$, the former is more fundamental, implying that fluctuations in the metallicity distribution within galaxies are driven more by short-term responses to physical processes such as star formation that can change much faster than a Hubble time., Comment: 16 pages, 15 figures, accepted by MNRAS

Galaxies' stellar masses, gas-phase oxygen abundances (metallicity), and star formation rates (SFRs) obey a series of empirical correlations, most notably the mass-metallicity relation (MZR) and fundamental metallicity relation (FZR), which relates oxygen abundance to a combination of stellar mass and SFR. However, due to the difficulty of measuring oxygen abundances and SFRs in galaxies that host powerful active galactic nuclei (AGN), to date it is unknown to what extent AGN-host galaxies also follow these correlations. In this work, we apply Bayesian methods to the MaNGA integral field spectrographic (IFS) survey that allow us to measure oxygen abundances and SFRs in AGN hosts, and use these measurements to explore how the MZR and FZR differ between galaxies that do and do not host AGN. We find similar MZRs at stellar masses above $10^{10.5} \mathrm{M}_\odot$, but that at lower stellar masses AGN hosts show up to $\sim 0.2$ dex higher oxygen abundances. The offset in the FZR is significantly smaller, suggesting that the larger deviation in the MZR is a result of AGN-host galaxies having systematically lower SFRs at fixed stellar mass. However, within the AGN-host sample there is little correlation between SFR and oxygen abundance. These findings support a scenario in which an AGN can halt efficient gas accretion, which drives non-AGN host galaxies to both higher SFR and lower oxygen abundance, resulting in the galaxy evolving off the star-forming main sequence (SFMS). As a consequence, as the SFR declines for an individual system its metallicity remains mostly unchanged., Comment: 18 pages, 14 figures, accepted for publication in MNRAS

We identify a fading AGN SDSS J220141.64+115124.3 from the internal Product Launch-11 (MPL-11) in Mapping Nearby Galaxies at Apache Point Observatory (MaNGA) survey. The central region with a projected radius of $\sim$2.4 kpc is characterized as LINER-like line ratios while the outskirts extended to $\sim$15 kpc show Seyfert-like line ratios. The [OIII]$\lambda$5007 luminosity of the Seyfert regions is a factor of 37 (2) higher than the LINER regions without (with) dust attenuation correction, suggesting that the AGN activity decreases at least $\sim$8 $\times$ 10$^3$ yrs ($\sim$2.4 kpc/light-speed) ago. We model the emission line spectra in the central region with double Gaussian components (a narrow core and a broad wing) and analyze the properties of each component. The narrow core component mostly co-rotates with the stellar disc, whereas the broad wing component with a median of the velocity dispersion $\sim$300 km s$^{-1}$ is related to a wind outflow. The kinematic position angle (PA) of the ionized gas shows a $\sim$20{\deg} twist from the galaxy center to 1.5 effective radius. The median of the PA difference between the gas and stellar components is as large as $\sim$50{\deg} within 0.4 effective radius. The tidal feature in DESI image and star-gas misalignment suggest this galaxy is a merger remnant. Combining all these observational results as well as public available X-ray and MIR luminosities, we confirm this is a fading AGN, the merger process kick-started the central engine to quasar phase which ionized gas composed of tidal debris, and now the activity of the central black hole decreases. The discontinuity in [OIII]$\lambda$5007 flux and EQW maps is due to multiple AGN outbursts triggered by merger remnant gas inflows., Comment: Accepted for publication in MNRAS. 12 pages, 10 figures, 1 table

The spatially precise integration of arrays of micro-patterned two-dimensional (2D) crystals onto three-dimensionally structured Si/SiO$_2$ substrates represents an attractive strategy towards the low-cost system-on-chip integration of extended functions in silicon microelectronics. However, the reliable integration of the arrays of 2D materials on non-flat surfaces has thus far proved extremely challenging due to their poor adhesion to underlying substrates as ruled by weak van der Waals interactions. Here we report on a novel fabrication method based on nano-subsidence which enables the precise and reliable integration of the micro-patterned 2D materials/silicon photodiode arrays exhibiting high uniformity. Our devices display peak sensitivity as high as 0.35 A/W and external quantum efficiency (EQE) of ca. 90%, outperforming most commercial photodiodes. The nano-subsidence technique opens a viable path to on-chip integrate 2D crystals onto silicon for beyond-silicon microelectronics., Comment: 41 pages, 5 figures, with SI

Frequent accretion of external cold gas is thought to play an important role in galaxy assembly. However, almost all known kinematically misaligned galaxies identify only one gas disk that is misaligned with the stellar disk, implying a single gas acquisition event. Here we report a new configuration in two galaxies where both contain two gas disks misaligned with each other and also with the stellar disk. Such systems are not expected to be stable or long-lasting, challenging the traditional picture of gas accretion of galaxies and their angular momentum build-up. The differences in kinematic position angles are larger than 120{\deg} between the two gas disks, and 40{\deg} between each gas disk and the stellar component. The star formation activity is enhanced at the interface of the two gas disks compared with the other regions within the same galaxy. Such systems illustrate that low-redshift galaxies can still experience multiple gas acquisition events, and provide a new view into the origins of galactic gas., Comment: Published in Nature Astronomy on 29 September 2022; 23 pages, 6 figures

Galaxy mergers and interactions are expected to play a significant role leading to offsets between gas and stellar motions in galaxies. Herein we crossmatch galaxies in MaNGA MPL-8 with the Dark Energy Spectroscopic Instrument (DESI) Legacy Surveys and identify 311 merging galaxies that have reliable measurements of the $\Delta$PA, the difference between the stellar and gas kinematic position angles to investigate the impacts of merging on gas-stellar rotation misalignments. We find that the merging fractions of misaligned galaxies (30$^\circ$ $\leqslant$ $\Delta$PA $<$150$^\circ$) are higher than that of co-rotators ($\Delta$PA $<$ 30$^\circ$) in both quiescent and star-forming galaxies. This result suggests that merging is one process to produce kinematic misalignments. The merging fraction of counter-rotators ($\Delta$PA $\leqslant$ 150$^\circ$) is lower than that of misaligned galaxies in both quiescent and star-forming galaxies, while in the latter it is likely even lower than that of co-rotators. The orbital angular momentum transfer to the spins of stars and gas during merging and the tidal feature disappearance can lead to small merging fractions in counter-rotators. Numerous new stars that inherit angular momentum from gas after merging can further lower the merging fraction of star-forming counter-rotators., Comment: 11 pages, 6 figures, accepted by MNRAS

Early-type galaxies (ETGs) are composed of two distinct populations: high-mass and low-mass, which are likely to be built via gas-poor merging and gas-rich merging/accretion, respectively. However, it is difficult to directly associate low-mass ETGs with gas-rich processes, because currently they are gas poor with no signs of ongoing star formation. We report a discovery of an ETG (SDSS J142055.01+400715.7) with Mstellar=10^10 Msun that offers direct evidence for gas-rich merging as the origin of low-mass ETGs. The integrated properties of the galaxy are consistent with a typical low-mass ETG, but the outer and inner regions show distinct dispersion- and rotation-dominated kinematics, respectively. There are some tidal features surrounding the galaxy. These two facts suggest very recent galaxy merging. Furthermore, the inner disk harbors on-going star formation, indicating the merging to be gas rich. This type of galaxy is rare but it may be a demonstration of the role the transient phase of gas-rich merging plays in making a low-mass ETG., Comment: 6 pages, 6 figures, accepted for publication in MNRAS

Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobility. The intriguingly high dependence of band gap on layer thickness may lead to novel device applications, although its origin remains poorly understood, and generally attributed to quantum confinement effect. In this work, we demonstrate via first-principles calculations that strong interlayer coupling may be mainly responsible for this phenomenon, especially in the fewer-layer region, and it could also be an essential factor influencing other material properties of {\beta}-InSe and {\gamma}-InSe. Existence of strong interlayer coupling manifests itself in three aspects: (i) indirect-to-direct band gap transitions with increasing layer thickness; (ii) fan-like frequency diagrams of the shear and breathing modes of few-layer flakes; (iii) strong layer-dependent carrier mobilities. Our results indicate that multiple-layer InSe may be deserving of attention from FET-based technologies and also an ideal system to study interlayer coupling, possibly inherent in other 2D materials., Comment: 8 pages, 5 figures

Two-dimensional (2D) van der Waals semiconductors represent the thinnest, air stable semiconducting materials known. Their unique optical, electronic and mechanical properties hold great potential for harnessing them as key components in novel applications for electronics and optoelectronics. However, the charge transport behavior in 2D semiconductors is more susceptible to external surroundings (e.g. gaseous adsorbates from air and trapped charges in substrates) and their electronic performance is generally lower than corresponding bulk materials due to the fact that surface and bulk coincide. In this article, we review recent progress on the charge transport properties and carrier mobility engineering of 2D transition metal chalcogenides, with a particular focus on the markedly high dependence of carrier mobility on thickness. We unveil the origin of this unique thickness dependence and elaborate the devised strategies to master it for carrier mobility optimization. Specifically, physical and chemical methods towards the optimization of the major factors influencing the extrinsic transport such as electrode/semiconductor contacts, interfacial Coulomb impurities and atomic defects are discussed. In particular, the use of \textit{ad-hoc} molecules makes it possible to engineer the interface with the dielectric and heal the vacancies in such materials. By casting fresh light onto the theoretical and experimental works, we provide a guide for improving the electronic performance of the 2D semiconductors, with the ultimate goal of achieving technologically viable atomically thin (opto)electronics., Comment: 33 pages, 19 figures and 6 tables

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors., Comment: 18 pages, 8 figures. A brief review for the JPSJ SPECIAL TOPICS "Recent Progress in Science of Atomic Layers"

Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities., Comment: First to observe the quantum confinement effect on interfacial barrier in 2D materials

Two-dimensional semiconductors are structurally ideal channel materials for the ultimate atomic electronics after silicon era. A long-standing puzzle is the low carrier mobility ({\mu}) in them as compared with corresponding bulk structures, which constitutes the main hurdle for realizing high-performance devices. To address this issue, we perform combined experimental and theoretical study on atomically thin MoS2 field effect transistors with varying the number of MoS2 layers (NLs). Experimentally, an intimate relation is observed with a 10-fold degradation in {\mu} for extremely thinned monolayer channels. To accurately describe the carrier scattering process and shed light on the origin of the thinning-induced mobility degradation, a generalized Coulomb scattering model is developed with strictly considering device configurative conditions, i.e., asymmetric dielectric environments and lopsided carrier distribution. We reveal that the carrier scattering from interfacial Coulomb impurities (e.g., chemical residues, gaseous adsorbates and surface dangling bonds) is greatly intensified in extremely thinned channels, resulting from shortened interaction distance between impurities and carriers. Such a pronounced factor may surpass lattice phonons and serve as dominant scatterers. This understanding offers new insight into the thickness induced scattering intensity, highlights the critical role of surface quality in electrical transport and would lead to rational performance improvement strategies for future atomic electronics., Comment: With Supporting Information

We demonstrate the possibility in quantifying the Raman intensities for both specimen and substrate layers in a common stacked experimental configuration and, consequently, propose a general and rapid thickness identification technique for atomic-scale layers on dielectric substrates. Unprecedentedly wide-range Raman data for atomically flat MoS2 flakes are collected to compare with theoretical models. We reveal that all intensity features can be accurately captured when including optical interference effect. Surprisingly, we find that even freely suspended chalcogenide few-layer flakes have a stronger Raman response than that from the bulk phase. Importantly, despite the oscillating intensity of specimen spectrum versus thickness, the substrate weighted spectral intensity becomes monotonic. Combined with its sensitivity to specimen thickness, we suggest this quantity can be used to rapidly determine the accurate thickness for atomic layers.

Unipolar transport is demonstrated in a bilayer graphene with a series of p-n junctions and is controlled by electrostatic biasing by a comb-shaped top gate. The OFF state is induced by multiple barriers in the p-n junctions, where the band gap is generated by applying a perpendicular electric field to the bilayer graphene, and the ON state is induced by the p-p or n-n configurations of the junctions. As the number of the junction increases, current suppression in the OFF state is pronounced. The multiple p-n junctions also realize the saturation of the drain current under relatively high source-drain voltages., Comment: 18 pages, 4 figures, Applied Physics Letters, in printing

We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n interface. A current-voltage relationship exhibiting differential resistance peak at forward bias stems from the tunneling current through the insulating region at the p-n interface. The tunneling current reflects singularities in the density of states modified by the electric field. This work suggests that the effect of carrier charge tuning by external electric field in 2D semiconductors is analogously to that by impurity doping in 3D semiconductors., Comment: 18 pages, 7 figures, to be published in Journal of the Physical Society of Japan

Realization of logic circuits from graphene is very attractive for high-speed nanoelectronics. However, the intrinsic ambipolar nature hinders the formation of graphene logic devices with the conventional complementary architecture. Using electrostatic doping modulation, we show here a facile method to control the charge neutrality points and form a complementary-like structure, in which the ambipolar conduction is used as a benefit rather than a drawback to construct logic devices. A band gap is also introduced in the channels to improve the switching ratio of the graphene transistors. For the first time, complementary-like NOR and NAND logic gates were demonstrated. This method provides a possible route for logic circuits from ambipolar graphene and, in principle, can be also extended to other ambipolar semiconductors, such as organic compounds and carbon nanotube thin films., Comment: 16 pages, 7 figures

Realization of logic circuits in graphene with an energy gap (EG) remains one of the main challenges for graphene electronics. We found that large transport EGs (>100 meV) can be fulfilled in dual-gated bilayer graphene underneath a simple alumina passivation top gate stack, which directly contacts the graphene channels without an inserted buffer layer. With the presence of EGs, the electrical properties of the graphene transistors are significantly enhanced, as manifested by enhanced on/off current ratio, subthreshold slope and current saturation. For the first time, complementary-like semiconducting logic graphene inverters are demonstrated that show a large improvement over their metallic counterparts. This result may open the way for logic applications of gap-engineered graphene., Comment: Accepted by ACS Nano