Search

Your search keyword '"Li, Shangsheng"' showing total 235 results
Start Over Author "Li, Shangsheng"
235 results on '"Li, Shangsheng"'

19. Thermoelectric performance of Te composited with FeTe2 and co-doped with Sb and Se.

Author

Lu, Weikang, Li, Shangsheng, Zhou, Xubiao, Zhu, Hongyu, Hu, Meihua, Qin, Bingke, and Su, Taichao

Abstract

In recent years, the element semiconductor Te has been considered as a potential thermoelectric material in the middle temperature region due to its excellent thermoelectric performance and high stability. However, it is necessary to dop with high toxic As element or low toxic Bi or Sb under high pressure conditions to obtain a moderate carrier concentration. In this study, we synthesized Sb-Se doped and FeTe2 composited Te under lower pressure conditions. The results show that the solid solubility of Fe in Te does not exceed 5 at%. After exceeding its solid solubility, Fe is precipitated in the form of FeTe2. The electrical transport properties and thermal conductivity of Te were tuned effectively by FeTe2 composite and Sb doping. The maximum ZT value of the sample with the composition of Fe0.1Te0.9Sb0.003 reaches 0.65 at 607 K, which is much higher than that of the pristine Te. The thermal conductivity was further reduced by Se doping. Thereby, the ZT value of the sample Fe0.1Te0.872Sb0.003Se0.025 was enhanced to 0.76 at 580 K. These results show that combining with doping and composite can improve the thermoelectric properties of Te effectively. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

23. Anatomic resection versus radiofrequency ablation with an ablative margin ≥ 1.0 cm for solitary small hepatocellular carcinoma measuring ≤ 3 cm: Comparison of long-term outcomes using propensity score matching analysis

Author

Zhang, Chunchen, primary, Gao, Ruize, additional, Guo, Shigang, additional, Ning, Chunmin, additional, Li, Aolei, additional, Wang, Xiangtao, additional, Li, Shangsheng, additional, Ding, Jianhua, additional, Kong, Xinliang, additional, Wang, Qiang, additional, Xu, Yanjie, additional, Li, Jiaqi, additional, Gao, Jun, additional, Wang, Shaohong, additional, Kong, Jian, additional, Ke, Shan, additional, and Sun, Wenbing, additional

Published
2022
Full Text
View/download PDF

25. Adaptive Control for Synchronous Generator Based on Pseudolinear Neural Networks

Author

Fan, Youping, Chen, Yunping, Li, Shangsheng, Liu, Dong, Chai, Yi, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Wang, Jun, editor, Yi, Zhang, editor, Zurada, Jacek M., editor, Lu, Bao-Liang, editor, and Yin, Hujun, editor

Published
2006
Full Text
View/download PDF

26. Adaptive Fuzzy Basis Function Network Based Fault-Tolerant Stable Control of Multi-machine Power Systems

Author

Fan, Youping, Chen, Yunping, Li, Shangsheng, Gong, Qingwu, Chai, Yi, Hutchison, David, editor, Kanade, Takeo, editor, Kittler, Josef, editor, Kleinberg, Jon M., editor, Mattern, Friedemann, editor, Mitchell, John C., editor, Naor, Moni, editor, Nierstrasz, Oscar, editor, Pandu Rangan, C., editor, Steffen, Bernhard, editor, Sudan, Madhu, editor, Terzopoulos, Demetri, editor, Tygar, Dough, editor, Vardi, Moshe Y., editor, Weikum, Gerhard, editor, Wang, Jun, editor, Yi, Zhang, editor, Zurada, Jacek M., editor, Lu, Bao-Liang, editor, and Yin, Hujun, editor

Published
2006
Full Text
View/download PDF

32. Effects of phosphorus dopingviaMn3P2on diamond growth along the (100) surfaces

Author

Su Taichao, Kunqiu Leng, Meihua Hu, Qun Yang, Guangjin Gao, Li Shangsheng, Mingming Guo, Kun-Peng Yu, Jun-Zuo Wang, and Yue You

Subjects
Materials science, Dopant, Doping, Analytical chemistry, chemistry.chemical_element, Diamond, 02 engineering and technology, General Chemistry, engineering.material, 010402 general chemistry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Crystal, Van der Pauw method, X-ray photoelectron spectroscopy, chemistry, engineering, General Materials Science, Fourier transform infrared spectroscopy, 0210 nano-technology, Carbon
Abstract

In this study, diamond crystals were synthesized via the temperature gradient method at 5.6 GPa and 1230–1245 °C by adding a Mn3P2 dopant and FeNi catalyst. Experimental results showed that Mn3P2 shifted the V-shaped growth region to the upper right by influencing the catalytic properties. The scanning electron microscopy (SEM) photographs of the diamonds synthesized at 1245 °C revealed that there were many dendritic structures in the (100) surfaces. The diamond crystal quality could be improved when the added Mn3P2 was less than 6 wt% at 1245 °C, but it would be seriously damaged when the diamond was heavily doped with Mn3P2. Pits and uneven layered structures appeared on the diamond surfaces when the additive was included at 12 wt% at 1245 °C. The Fourier transform infrared spectroscopy (FTIR) results revealed that the Mn3P2 additive increases the N content of the crystal and that N is present in the diamond crystal in the form of a “C” center. It is worth noting that phosphorus could be doped into diamond crystals by using the Mn3P2 additive and that the other impurities in diamonds were mostly C–N and C–O forms, as confirmed by X-ray photoelectron spectroscopy (XPS). The phosphorus in the sample crystals mainly formed C–P bonds with carbon, while a smaller amount of phosphorus formed P–O bonds with oxygen. The test results of the electrical properties as assessed by the van der Pauw method for the diamond crystals with Mn3P2 doped at 1245 °C revealed a resistivity of 0.516 × 106–9.729 × 106 Ω cm and a negative Hall coefficient, indicative of an n-type semiconductor.

Published
2019
Full Text
View/download PDF

33. In situ synthesis and thermoelectric properties of Te/FeTe2 composites.

Author

Zhou, Xubiao, Li, Shangsheng, Su, Taichao, Hu, Meihua, Hu, Qiang, and Qin, Bingke

Subjects
CARRIER density, THERMOELECTRIC materials, THERMAL conductivity, PHONON scattering, POISONS, SEMICONDUCTORS
Abstract

Besides excellent thermoelectric performance in the medium temperature region, the elemental semiconductor Tellurium (Te) has the character of simple composition and not easy to segregate, which also makes it very advantageous in practical manufacturing and application, and has attracted extensive attention in recent years. However, the carrier concentration of intrinsic Te is too low to obtain high thermoelectric performance. Only high toxic As doing is effective to optimize the electrical transport properties. In this study, we used the in situ compositing method to overcome the disadvantage of poor electrical transport properties of Te. The results show that simple mixing followed by high-pressure sintering method can form dispersoid distribution of FeTe2 in the matrix of Te. High carrier concentration of 2.6 to 4.8 × 1019 cm−3 was obtained for the Te/FeTe2 composites, which results in an enhanced power factor. Simultaneously, the phonon scattering of the second phase of FeTe2 reduces the phonon thermal conductivity of Te. This study shows that FeTe2 composition helps to overcome the disadvantage of poor electrical transport properties of elemental semiconductor Te. [ABSTRACT FROM AUTHOR]

Published
2022
Full Text
View/download PDF

43. Thermoelectric performance of Te doped with As and alloyed with Se

Author

Li Shangsheng, Hongan Ma, Su Taichao, Xiaopeng Jia, Manman Yang, Hu Qiang, Hu Meihua, and Zhu Hongyu

Subjects
Materials science, chemistry.chemical_element, 02 engineering and technology, 010402 general chemistry, 01 natural sciences, Condensed Matter::Materials Science, Thermal conductivity, Condensed Matter::Superconductivity, Thermoelectric effect, General Materials Science, Arsenic, Condensed matter physics, business.industry, Mechanical Engineering, Doping, 021001 nanoscience & nanotechnology, Crystallographic defect, 0104 chemical sciences, Semiconductor, chemistry, Mechanics of Materials, Condensed Matter::Strongly Correlated Electrons, Dislocation, 0210 nano-technology, Tellurium, business
Abstract

Recently, it was found that element semiconductor tellurium (Te) behaved a high thermoelectric (TE) performance. Further enhancement of its TE performance was expected in decreasing phonon thermal conductivity. In this paper, element semiconductor Te doped with arsenic (As) and alloyed with selenium (Se) was prepared by one-step high-pressure method. Trace amounts of As doping could increase the carrier concentration of Te effectively and thereby optimize its power factor. The phonon thermal conductivity of Te was depressed sharply, due to the effect of high-pressure compression (introducing dislocations, lattice curvatures and nanograins) and Se alloying (introducing point defects and crystal dislocation). The beneficial effect of As doping on the power factor, high-pressure compression and Se alloying on thermal conductivity led to a peak ZT of 0.81 at 540 K for Te doped with 0.5 mol% As and alloyed with 10 mol% Se.

Published
2018
Full Text
View/download PDF

50. High-pressure synthesis and thermoelectric performance of tellurium doped with bismuth

Author

Zhu Hongyu, Manman Yang, Xiaopeng Jia, Li Shangsheng, Su Taichao, Hu Qiang, Hongan Ma, Hu Meihua, and Dawei Zhou

Subjects
010302 applied physics, Materials science, Dopant, business.industry, Mechanical Engineering, Doping, Analytical chemistry, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Bismuth, Semiconductor, chemistry, Mechanics of Materials, Seebeck coefficient, 0103 physical sciences, Thermoelectric effect, Figure of merit, General Materials Science, 0210 nano-technology, Tellurium, business
Abstract

Recently, it was found that element semiconductor tellurium (Te) has a high thermoelectric performance. However, it needs to be doped with high-toxic arsenic (As) to tune the carrier concentration of Te. In this paper, low-toxic bismuth (Bi) was employed as dopant to optimize the thermoelectric performance of Te combining with a high-pressure synthesis method. The effect of substituting Bi on the electrical transport and thermal transport properties of Te has been investigated. The results show that the solubility limit of Bi in Te is about 0.1 mol%. However, the trace amounts of Bi doping can tune the carrier concentration of Te effectively and thereby optimize its power factor. The thermal conductivity of non-doped Te prepared by high pressure is much lower than that of the sample prepared at ambient pressure. And Bi doping can further decrease the value due to the phonons scattered by the heavy impurity atom. An enhanced figure of merit ZT ~ 0.72 was obtained at 517 K, which is about four times that of non-doped Te and is comparable to the state-of-the-art thermoelectric alloys with more complex composition such as Bi2Te3 and PbTe.

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results