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All‐inorganic CsPbI3 perovskite semiconductor is attractive for deep‐red light‐emitting diodes (LEDs) because of its high photoluminescence, good thermal stability, excellent charge transport, and solution processability. However, the metastable phase of optically active CsPbI3 hinders the fabrication of efficient and bright deep‐red LEDs. Herein, a multifunctional ionic ligand regulation strategy using (2‐hydroxy‐5‐methylphenyl) triphenyl‐phosphonium iodide and 3‐(N, N‐dimethyloctylammonio) propanesulfonate is reported to regulate the optically active CsPbI3 crystallization and thus obtain high‐quality γ‐CsPbI3 thin films. The high crystallinity and preferential orientation of γ‐CsPbI3 arise from the strong bonding between the ionic ligands and ionic lead halide clusters. The obtained γ‐CsPbI3 thin films also possess suppressed defect densities, high luminescence, and high stability. Using this high‐quality thin film, an efficient and bright deep‐red LED with a peak external quantum efficiency of 13.34% and a maximum luminance of 2110 cd m−2 is successfully fabricated. The operational lifetime of the fabricated LED (time to half of the initial brightness, T50) reaches up to 40 min under a high current density of 50 mA cm−2 (corresponding to the initial brightness of 200 cd m−2). [ABSTRACT FROM AUTHOR]

Metal halide perovskite light‐emitting diodes (PeLEDs) are promising high‐definition display candidates due to their narrow emission bandwidth and wide color gamut. However, efficient and stable pure‐red PeLEDs have rarely been achieved. Herein, a robust and strongly‐coordinated sulfate anion passivation strategy is reported to achieve a spectrally stable and efficient pure‐red PeLED with an electroluminescent peak at 630 nm and full width at half maximum of 27 nm. Octylammonium sulfate is employed to construct a PbSO4 layer on the surface of CsPbI3−xBrx nanocrystals, which can effectively inhibit phase separation under UV light, humidity, or heat treatment. Using sulfate passivated CsPbI3−xBrx NC film, pure red PeLEDs with high external quantum efficiency of 12.6%, excellent spectral stability, and an operational half‐life time of over 300 min (T50@100 cd cm−2) are fabricated. This work provides a new avenue to improve performance of pure red PeLEDs via strong‐coordinated sulfate passivation. [ABSTRACT FROM AUTHOR]

Inorganic cesium lead bromide nanocrystals (CsPbBr 3 NCs) hold promising prospects for high performance green light-emitting diodes (LEDs) due to their exceptional color purity and high luminescence efficiency. However, the common ligands employed for passivating these indispensable NCs, such as long-chain organic ligands like oleic acid and oleylamine (OA/OAm), display highly dynamic binding and electronic insulating issues, thereby resulting in a low efficiency of the as-fabricated LEDs. Herein, we report a new zwitterionic short-branched alkyl sulfobetaine ligand, namely trioctyl(propyl-3-sulfonate) ammonium betaine (TOAB), to in situ passivate CsPbBr 3 NCs via a feasible one-step solution synthesis, enabling efficiency improvement of CsPbBr 3 NC-based LEDs. The zwitterionic TOAB ligand not only strengthened the surface passivation of CsPbBr 3 NCs with a high photoluminescence quantum yield (PLQY) of 97%, but also enhanced the carrier transport in the fabricated CsPbBr 3 NC thin films due to the short-branched alkyl design. Consequently, CsPbBr 3 NCs passivated with TOAB achieved a green LED with an external quantum efficiency (EQE) of 7.3% and a maximum luminance of 5716 cd m -2 , surpassing those of LEDs based on insulating long-chain ligand-passivated NCs. Our work provides an effective surface passivation ligand design to enhance the performance of CsPbBr 3 NC-based LEDs.

Lead halide perovskite nanocrystals (LHP NCs) are regarded as promising emitters for next-generation ultrahigh-definition displays due to their high color purity and wide color gamut. Recently, the external quantum efficiency (EQE) of LHP NC based light-emitting diodes (PNC LEDs) has been rapidly improved to a level required by practical applications. However, the poor operational stability of the device, caused by halide ion migration at the grain boundary of LHP NC thin films, remains a great challenge. Herein, we report a resurfacing strategy via pseudohalogen ions to mitigate detrimental halide ion migration, aiming to stabilize PNC LEDs. We employ a thiocyanate solution processed post-treatment method to efficiently resurface CsPbBr 3 NCs and demonstrate that the thiocyanate ions can effectively inhibit bromide ion migration in LHP NC thin films. Owing to thiocyanate resurfacing, we fabricated LEDs with a high EQE of 17.3%, a maximum brightness of 48000 cd m -2 , and an excellent operation half-life time.