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A quad-band microstrip bandpass filter (BPF) based on a 13-mode resonator is proposed in this article with compact size, high band‐to‐band isolation, and multiple transmission zeros (TZs). The proposed filter is constructed by two transmission paths from the input to the output port, which employs the transversal cancellation mechanism of two transition paths to introduce extra nine TZs. Therefore, a total of 12 TZs are located at 0.2, 1.8, 2, 3.88, 4.61, 5.24, 5.9, 9.26, 9.51, 12.32, 12.75, and 13.27 GHz, respectively, realizing high selectivity. Moreover, the designed filter can achieve quad passbands with centered frequency at 0.95, 2.78, 7.32, and 10.63 GHz for the requirement of multi-service in modern communication systems, with wide bandwidth of 235, 790, 2200, and 1540 MHz, respectively. The measured results agree well with the simulation results, which proves the feasibility of the design method. [ABSTRACT FROM AUTHOR]

Recently, lithium niobate thin film laterally excited bulk wave resonators (XBARs) have attracted much attention because of their advantage of high frequency and outstanding electromechanical coupling factor (K2) enabling wide filter bandwidths. These can satisfy the increasing 5G communication demand. However, their large temperature coefficient limits their development to some extent. To improve their temperature stability with little K2 reduction, this paper has proposed a sandwiched structure for temperature compensated XBARs (TC XBARs). This structure includes the top silicon dioxide (SiO2) layer and the bottom SiO2 layer. One layer can improve temperature stability, and the other layer can increase K2. The optimized XBARs have a temperature coefficient of frequency (TCF) of −90.77 ppm⁄°C. The common two-layer TC XBARs can achieve a TCF of −22 ppm⁄°C sacrificing K2 to 8%. However, the proposed sandwiched TC XBARs can achieve a K2 of 12.15 and a TCF of −28.94 ppm⁄°C simultaneously, with a large FoM. Meanwhile, spurious modes can be suppressed in the sandwiched structure. Thus, this sandwiched structure can provide a good solution for the high performance of XBARs. [ABSTRACT FROM AUTHOR]

To prospective research the efficacy of dual-energy computed tomography (DECT) in predicting contrast medium extravasation and secondary cerebral hemorrhage after stent thrombectomy in acute ischemic cerebral infarction. Ninety-two patients with acute ischemic stroke who underwent intra-arterial thrombolysis in our hospital from December 2019 to January 2022 have opted as the study subjects. DECT was performed immediately after stent thrombectomy. Images were generated through the image workstation and routine diagnosis was performed 24 hours after the operation. To analyze the diagnostic value of To analyze the diagnostic value of DECT, and to explore the diagnostic status of lesions with hemorrhagic transformation or increased hemorrhage and their correlation with iodine concentration. (1) 68 situations were confirmed, 56 positive and 12 negative with detection rates of 10.71% for hemorrhage, 75.00% for contrast agent extravasation, and 14.29% for extravasation combined with hemorrhage; (2) DECT diagnosed 8 cases of postoperative bleeding and 44 cases of extravasation of contrast media and 4 cases of extravasation of contrast media with hemorrhage ; The accuracy of DECT in diagnosing postoperative hemorrhage was 96.43%. The accuracy of diagnosis of extravasation was 96.43%. (3) The mean iodine concentration of lesions with increased hemorrhage or hemorrhagic transformation was higher compared to those without; (4) There was a correlation between hemorrhagic transformation or increased hemorrhage and iodine concentration. Dual-energy CT (DECT) can accurately distinguish the extravasation of contrast agent and secondary cerebral hemorrhage, and can predict the increased bleeding and bleeding transformation, with good diagnostic value and good predictive efficacy. [ABSTRACT FROM AUTHOR]

Current semiconductor gas sensors often fail to operate in low-temperature and high-vacuum environments, making it challenging to detect gases in space. Herein, a core–shell structured SnO2@Ag2O composite with a high proportion of an effective interface was designed and developed into a MEMS gas sensor. Utilizing the selective adsorption of H2S gas by SnO2 microspheres, the direct reaction between Ag2O nanoparticles and H2S gas adsorbed on the surface of SnO2 microspheres was achieved. The gas sensor achieved a fast response and high selectivity to H2S gas under −20 °C and 1 × 10−5 Pa, with a response time of 15.3 s and a response value of 7.6 for 1 ppm H2S gas. The present study has clarified surface chemisorbed oxygen ion roles and the deactivation of semiconductor gas sensors under high-vacuum. The "adsorption coupled with reaction" concept for gas sensing reactions was introduced, which could potentially be utilized in gas detection for deep space exploration. [ABSTRACT FROM AUTHOR]