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In quantum computing, precise control of system-environment coupling is essential for high-fidelity gates, measurements, and networking. We present an architecture that employs an artificial giant atom from waveguide quantum electrodynamics to tailor the interaction between a superconducting qubit and its environment. This frequency-tunable giant atom exhibits both frequency and power selectivity for photons: when resonant with the qubit, it reflects single photons emitted from the qubit while remaining transparent to strong microwave signals for readout and control. This approach surpasses the Purcell limit and significantly extends the qubit's lifetime by ten times while maintaining the readout speed, thereby improving both gate operations and readout. Our architecture holds promise for bridging circuit and waveguide quantum electrodynamics systems in quantum technology applications.

Accurately digitizing physical objects is central to many applications, including virtual/augmented reality, industrial design, and e-commerce. Prior research has demonstrated efficient and faithful reconstruction of objects' geometric shapes and visual appearances, which suffice for digitally representing rigid objects. In comparison, physical properties, such as elasticity and pressure, are also indispensable to the behavioral fidelity of digitized deformable objects. However, existing approaches to acquiring these quantities either rely on invasive specimen collection or expensive/bulky laboratory setups, making them inapplicable to consumer-level usage. To fill this gap, we propose a wearable and non-invasive computing framework that allows users to conveniently estimate the material elasticity and internal pressure of deformable objects through finger touches. This is achieved by modeling their local surfaces as pressurized elastic shells and analytically deriving the two physical properties from finger-induced wrinkling patterns. Together with photogrammetry-reconstructed geometry and textures, the two estimated physical properties enable us to faithfully replicate the motion and deformation behaviors of several deformable objects. For the pressure estimation, our model achieves a relative error of 3.5%. In the interaction experiments, the virtual-physical deformation discrepancy measures less than 10.1%. Generalization to objects of irregular shape further demonstrates the potential of our approach in practical applications. We envision this work to provide insights for and motivate research toward democratizing the ubiquitous and pervasive digitization of our physical surroundings in daily, industrial, and scientific scenarios., Comment: 10 pages, 6 figures

Advancements in the fabrication of superconducting quantum devices have highlighted tantalum as a promising material, owing to its low surface oxidation microwave loss at low temperatures. However, tantalum films exhibit significantly larger kinetic inductances compared to materials such as aluminum or niobium. Given the inevitable variations in film thickness, this increased kinetic inductance leads to considerable, uncontrolled frequency variances and shifts in components like superconducting coplanar waveguide (SCPW) resonators. Achieving high precision in resonator frequencies is crucial, particularly when multiple resonators share a common Purcell filter with limited bandwidth in superconducting quantum information processors. Here, we tackle this challenge from both fabrication and design perspectives, achieving a reduction in resonator frequency fluctuation by a factor of more than 100. Concurrently, the internal quality factor of the SCPW resonator remains at high level. Our findings open up new avenues for the enhanced utilization of tantalum in large-scale superconducting chips.

The unique property of tantalum (Ta), particularly its long coherent lifetime in superconducting qubits and its exceptional resistance to both acid and alkali, makes it promising for superconducting quantum processors. It is a notable advantage to achieve high-performance quantum processors with neat and unified fabrication of all circuit elements, including coplanar waveguides (CPW), qubits, and airbridges, on the tantalum film-based platform. Here, we propose a reliable tantalum airbridges with separate or fully-capped structure fabricated via a novel lift-off method, where a barrier layer with aluminium (Al) film is first introduced to separate two layers of photoresist and then etched away before the deposition of tantalum film, followed by cleaning with piranha solution to remove the residual photoresist on the chip. We characterize such tantalum airbridges as the control line jumpers, the ground plane crossovers and even coupling elements. They exhibit excellent connectivity, minimal capacitive loss, effectively suppress microwave and flux crosstalk and offer high freedom of coupling. Besides, by presenting a surface-13 tunable coupling superconducting quantum processor with median $T_1$ reaching above 100 $\mu$s, the overall adaptability of tantalum airbridges is verified. The median single-qubit gate fidelity shows a tiny decrease from about 99.95% for the isolated Randomized Benchmarking to 99.94% for the simultaneous one. This fabrication method, compatible with all known superconducting materials, requires mild conditions of film deposition compared with the commonly used etching and grayscale lithography. Meanwhile, the experimental achievement of non-local coupling with controlled-Z (CZ) gate fidelity exceeding 99.2% may further facilitate qLDPC codes, laying a foundation for scalable quantum computation and quantum error correction with entirely tantalum elements., Comment: 15 pages, 10 figures

In multi-qubit superconducting systems utilizing flip-chip technology, achieving high accuracy in resonator frequencies is of paramount importance, particularly when multiple resonators share a common Purcell filter with restricted bandwidth. Nevertheless, variations in inter-chip spacing can considerably influence these frequencies. To tackle this issue, we present and experimentally validate the effectiveness of a resonator design. In our design, we etch portions of the metal on the bottom chip that faces the resonator structure on the top chip. This enhanced design substantially improves frequency stability by a factor of over 3.5 compared to the non-optimized design, as evaluated by the root mean square error of a linear fitting of the observed frequency distribution, which is intended to be linear. This advancement is crucial for successful scale-up and achievement of high-fidelity quantum operations.

In-plane anomalous Hall effect (IPAHE) is an unconventional anomalous Hall effect (AHE) with the Hall current flows in the plane spanned by the magnetization or magnetic field and the electric field. Here,we predict a stable two-dimensional ferromagnetic monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ with collinear ordering of Mn moments in the basal plane. Moreover, we reveal that the monolayer $\mathrm{Mn}_{3}\mathrm{Si}_{2}\mathrm{Te}_{6}$ possesses a substantial periodic IPAHE due to the threefold rotational symmetry, which can be switched by changing the magnetization orientation by external magnetic fields. In addition, we briefly discuss the impacts of moderate strains on the electronic states and AHE, which lead to a near quantized Hall conductivity. Our work provides a potential platform for realizing a sizable and controllable IPAHE that greatly facilatates the application of energy-efficient spintronic devices., Comment: 7 pages, 8 figures

Two-dimensional ferromagnetic (FM) half-metals are promising candidates for advanced spintronic devices with small-size and high-capacity. Motivated by recent report on controlling synthesis of FM Cr$_3$Te$_4$ nanosheet, herein, to explore the potential application in spintronics, we designed spintronic devices based on Cr$_3$X$_4$ (X=Se, Te) monolayers and investigated their spin transport properties. We found that Cr$_3$Te$_4$ monolayer based device shows spin filtering and dual spin diode effect when applying bias voltage, while Cr$_3$S$_4$ monolayer is an excellent platform to realize a spin valve. The different transport properties are primarily ascribed to the semiconducting spin channel, which is close to and away from the Fermi level in Cr$_3$Te$_4$ and Cr$_3$Se$_4$ monolayers, respectively. Interestingly, the current in monolayer Cr$_3$Se$_4$ based device also displays a negative differential resistance effect (NDRE) and a high magnetoresistance ratio (up to 2*10$^3$). Moreover, we found thermally induced spin filtering effect and NDRE in Cr$_3$Se$_4$ junction when applying temperature gradient instead of bias voltage. These theoretical findings highlight the potential of Cr$_3$X$_4$ (X=Se, Te) monolayers in spintronic applications and put forward realistic materials to realize nanosale spintronic device.

We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional (2D) transition metal dichalcogenide (TMDC) WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the basis of density function theory combined with Boltzmann transport equation, we show that the TE figure of merit zT of monolayer WS2 is remarkably enhanced when forming into a WS2/WSe2 LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel (xx) and perpendicular (yy) to the superlattice period are highly symmetric for both p- and n-doped LS owing to the nearly isotropic lifetime of charger carriers. The spin-orbital effect causes a significant split of conduction band and leads to three-fold degenerate sub-bands and high density of states (DOS), which offers opportunity to obtain the high n-type Seebeck coefficient (S). Interestingly, the separated degenerate sub-bands and upper conduction band in monolayer WS2 form a remarkable stairlike DOS, yielding a higher S. The hole carriers with much higher mobility than electrons reveal the high p-type power factor and the potential to be good p-type TE materials with optimal zT exceeds 1 at 400K in WS2/WSe2 LS.