185 results on '"Li, A.Z."'
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2. Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors
3. Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides
4. Effects of continuously graded or step-graded InxAl1−xAs buffer on the performance of InP-based In0.83Ga0.17As photodetectors
5. Optimization of InAlAs buffers for growth of GaAs-based high indium content InGaAs photodetectors
6. Effects of well widths and well numbers on InP-based triangular quantum well lasers beyond 2.4 µm
7. Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4 μm
8. The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3 μm
9. Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectors
10. Gas source MBE grown Al0.52In0.48P photovoltaic detector
11. Optimization of AlInGaAs/InGaAs/InAs strain compensated triangular quantum wells grown by gas source molecular beam epitaxy for laser applications in 2.1–2.4 μm range
12. Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures
13. Key issues associated with low threshold current density for InP-based quantum cascade lasers
14. Polymeric 1 × 32 arrayed waveguide grating multiplexer using cross-linkable fluorinated poly (ether ether ketone) at 1550 nm
15. Gas source MBE growth and doping characteristics of AlInP on GaAs
16. Energy filters using modulated superlattices
17. Continuous-wave operation quantum cascade lasers at 7.95 μm
18. Low threshold distribution feedback quantum cascade lasers at 7.6 μm grown by gas source molecular beam epitaxy
19. Heat management of MBE-grown antimonide lasers
20. Microstructure, heat treatment, and oxidation study of porous silicon formed on moderately doped p-type silicon
21. Photoluminescence studies of InGaAs/InAlAs strained double quantum wells
22. Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy
23. Fabrication and characterization of thick porous silicon layers for rf circuits
24. Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs
25. High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy
26. The effects of (NH 4) 2S passivation treatments on the dark current–voltage characteristics of InGaAsSb PIN detectors
27. Characterization of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers
28. TRAP SUPPRESSION IN n AND p MBE GROWN GaAs BY ISOELECTRONIC (In OR Sb) DOPING AND SELECTION OF SUITABLE GROWTH PARAMETERS
29. Band-structure and optical gain for InAsP/In(GaAs)P MQW laser structures
30. Mid-infrared GaInAsSb photodetector grown by solid source molecular beam epitaxy
31. MBE grown 2.0 μm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes
32. Temperature and injection current dependencies of 2 μm InGaAsSb/AlGaAsSb multiple quantum-well ridge-waveguide lasers
33. GSMBE growth of InGaP/(In)GaAs modulation-doped heterostructures and their applications to HEMT and HHMT
34. GSMBE grown In 0.49Ga 0.51P/GaAs heterojunction bipolar transistors with heavily beryllium doped base and undoped Spacer
35. Characteristics of strain compensated 1.3 μm InAsP/InGaAsP ridge waveguide laser diodes grown by gas source MBE
36. The effect of dispersion of the refractive index on the performance of mid-infrared quantum cascade lasers
37. Quasi RT-CW operation of InGaAs/InGaAsP strained quantum well lasers
38. Characterization of GaN grown by RF plasma MBE
39. Study of AlGaAsSb/InGaAsSb strained quantum well grown by molecular beam epitaxy on GaSb(100)
40. Coupling coefficients for guided modes in distributed feedback quantum cascade lasers
41. Suppression of yellow luminescence in As-doped GaN epilayers grown by metalorganic chemical vapor deposition
42. Growth and characterization of high-quality GaInAs/AlInAs triple wells
43. Temperature-dependent exciton behavior in quaternary GaInAsSb/AlGaAsSb strained single quantum wells
44. Theoretical estimates of optimal parameters for quantum cascade lasers
45. The effect of strain on the miscibility gap in Ga–In–Sb ternary alloy
46. GSMBE grown infrared quantum cascade laser structures
47. GSMBE grown In 0.49Ga 0.51P/(In)GaAs/GaAs high hole mobility transistor structures
48. Crystal Structure of TR3 LBD_L449W in complex with Molecule 2
49. Crystal Structure of TR3 LBD in complex with Molecule 6
50. Crystal Structure of TR3 LBD in complex with 1-(3,4,5-trihydroxyphenyl)decan-1-one
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