146 results on '"Lhostis, S."'
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2. Reliability of the hybrid bonding level using submicrometric bonding pads
3. Recent Advances on Electromigration in Cu/SiO2 to Cu/SiO2 Hybrid Bonds for 3D Integrated Circuits
4. Thermal management of electronic devices by composite materials integrated in silicon
5. Soft X-ray photoemission study of nitrogen diffusion in TiN/HfO:N gate stacks
6. Carbon-doped GeTe: A promising material for Phase-Change Memories
7. Impact of the TiN electrode deposition on the HfO 2 band gap for advanced MOSFET gate stacks
8. New Method to Perform TDDB Tests for Hybrid Bonding Interconnects
9. Review—Hybrid Bonding-Based Interconnects: A Status on the Last Robustness and Reliability Achievements
10. $1.62\mu \mathrm{m}$ Global Shutter Quantum Dot Image Sensor Optimized for Near and Shortwave Infrared
11. Scanning Acoustic Microscopy versus Colored Picosecond Acoustics to detect interface defects in hybrid wafer bonding
12. Chemical interface analysis of as grown Hf[O.sub.2] ultrathin films on Si[O.sub.2]
13. Understanding of the thermal stability of the hafnium oxide/TiN stack via 2 “high k” and 2 metal deposition techniques
14. Observation of HfO 2 thin films by deep UV spectroscopic ellipsometry
15. Atomic Vapour Deposition (AVD™) Process for High Performance HfO22 Dielectric Layers
16. Impact of Process Variations on the Capacitance and Electrical Resistance down to $1.44\ \mu\mathrm{m}$ Hybrid Bonding Interconnects
17. Pulsed liquid-injection MOCVD of high-K oxides for advanced semiconductor technologies
18. Characterization of crystalline MOCVD SrTiO 3 films on SiO 2/Si(100)
19. Electrical characterization of SrTiO 3 thin films deposited on Si(0 0 1) substrate by liquid injection MOCVD
20. Study of crystalline structure N-doped GeSb Phase Change Material for PCRAM applications
21. Ultra-Low Energy Ion Implantation of Si into HfO2 and HfSiO-based Structures for Non Volatile Memory Applications
22. Ultra-Low energy Ion Implantation of Si into HfO2-based layers for Non Volatile Memory Applications
23. Thin films of the double perovskite Sr 2FeMoO 6 deposited by pulsed laser deposition
24. Robustness and reliability achievements for direct hybrid bonding integration: a review
25. Hybrid bonding for 3D stacked image sensors: impact of pitch shrinkage on interconnect robustness
26. Fine pitch 3D interconnections with hybrid bonding technology: From process robustness to reliability
27. Chemical interface analysis of as grown HfO2 ultrathin films on SiO2.
28. Making Synchrotron Tomography a Routine Tool for 3D Integration Failure Analysis through a Limited Number of Projections, an Adapted Sample Preparation Scheme, and a Fully-Automated Post-Processing
29. 1μm Pitch direct hybrid bonding with <300nm wafer-to-wafer overlay accuracy
30. Effect of passivation annealing on the electromigration properties of hybrid bonding stack
31. High-Resolution X-Ray Computed Tomography—What Synchrotron Sources Can Bring to 3Di Devices Failure Analysis
32. ITAC: A complete 3D integration test platform
33. Cu/SiO2 hybrid bonding: Finite element modeling and experimental characterization
34. Reliable 300 mm Wafer Level Hybrid Bonding for 3D Stacked CMOS Image Sensors
35. Thermal management of electronic devices by composite materials integrated in silicon
36. Impact of oxidation on Ge2Sb2Te5 and GeTe phase-change properties
37. Phase Change Memories Challenges: A Material and Process Perspective
38. PECVD of GeTe material for embedded applications
39. New challenges and opportunities for 3D integrations
40. 200 nm Wafer-to-wafer overlay accuracy in wafer level Cu/SiO2 hybrid bonding for BSI CIS
41. Microchannel Design Study for 3D Microelectronics Cooling Using a Hybrid Analytical and Finite Element Method
42. Electrical characterization of low energy Ge+ implanted Si3N4 Films With HfO2/SiO2 stack tunnel dielectric for non-volatile memory application
43. Formation and evolution of Ge nanocrystals by low-energy ion implantation in SiN/HfO2 stack layers for non-volatile memory applications
44. Ultra-low energy ion implantation of Si into HfO2 and HfSiO-based structures for non volatile memory applications
45. PCRAM performances improvement with nitrogen doped GeTe material for embedded applications
46. Ge nanocrystals embedded in Si3N4/HfO2 stack gate dielectrics by low-energy ion implantation for nonvolatile memory application
47. Ultra-low energy ion implantation of Si into HfO2-based structures for non volatile memory applications
48. Spectroscopic ellipsometric sudy of phase-change materials for data storage applications
49. Influence of the stoechiometry of GeTe thin films on their physical properties for PCRAM applications
50. Addition of yttrium into HfO2: Microstructure and electrical properties
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