1. Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$
- Author
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Llopez, Alexandre, Leroy, Frédéric, Tagne-Kaegom, Calvin, Croes, Boris, Michon, Adrien, Mastropasqua, Chiara, Khalfioui, Mohamed Al, Curiotto, Stefano, Müller, Pierre, Saùl, Andrés, Kierren, Bertrand, Kremer, Geoffroy, Fèvre, Patrick Le, Bertran, François, Fagot-Revurat, Yannick, and Cheynis, Fabien
- Subjects
Condensed Matter - Materials Science - Abstract
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports., Comment: ACS Applied Materials and Interfaces, 2024
- Published
- 2024
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