1. Simulation of electrons irradiation damages to optimize the performance of IGBT
- Author
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Elmazria, O., Hoffman, A., Lepley, B., Charles, J.-P., and Adams, L.
- Subjects
Bipolar transistors -- Research ,Electromagnetic radiation -- Research ,Business ,Electronics ,Electronics and electrical industries - Abstract
Electron irradiation (IE) is a technique used to control the IGBT switching performances and then produce series of IGBT's with various switching velocities. However, this irradiation introduces undesirable effects on other parameters, such as forward voltage drop and leakage current. In this paper, we propose a method to optimize the performances of the IGBT's considering the degradation effects. The IE effects are simulated using the two-dimensional device simulator ATLAS. Defects densities defined by their energy levels and capture cross section, and densities are introduced into all the structure layers. The energy levels and capture cross sections are extracted from literature and densities are obtained by an iterative process, where the simulated characteristics are fitted to the experimental ones. This method validity is confirmed by comparison of simulation results with experimental ones performed onto a series of IGBT's irradiated to various doses. Steady states and switching characteristics obtained by both simulation and measurements are in good agreement and variations of forward voltage drop versus turn-off time for various doses are obtained and used for performance optimization purposes.
- Published
- 1997