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White layer formation is considered as a part of minimum array of parameters characterizing surface integrity of the machined product. The paper is aimed on identification and characterization of white layer generated when finish turning aged Inconel 718 with Al 2 O 3 -SiC w ceramic tools under different cutting conditions, tool wear and coolant application. As expected intensity of white layer formation was proportional to cutting speed and tool wear. High resolution transmission electron microscopy (HRTEM) performed on white layer revealed formation of nanostructured material with grain size of 50-150 nm. Long-term ultrasonic-assisted etching of white layer allowed to uncover its morphology, where subsequent AFM measurements confirmed HRTEM findings. Observations by high resolution SEM provided evidence that γ’ Ni 3 (Al,Ti) phase remained intact. [ABSTRACT FROM AUTHOR]

Vacuum diffusion-bonded printed circuit heat exchangers are an attractive choice for the high-temperature, high-pressure demands of next-generation energy applications. However, early reports show that the high-temperature materials desired for these applications suffer from poor bond strengths due to precipitation at the bond line, preventing grain boundary migration. In this study, a diffusion bond of the high-temperature stainless steel grade 321H is investigated, and poor mechanical properties are found to be caused by Ti(C, N) precipitation at the bond line. Through in situ studies, it is found that Ti diffuses from the bulk to the mating surfaces at high temperatures. The Ti subsequently precipitates and, for the first time, an interaction between Ti(C, N) and Al/Mg-oxide precipitates at the bond line is observed, where Ti(C, N) nucleates on the oxides forming a core-shell structure. The results indicate that small amounts of particular alloying elements can greatly impact diffusion bond quality, prompting further research into the microstructural evolution that occurs during bonding conditions., Competing Interests: Conflict of Interest: The authors declare that they have no competing interest., (© The Author(s) 2024. Published by Oxford University Press on behalf of the Microscopy Society of America.)

Interdiffusion and chemical reactions contribute to tool wear in metal machining. Increased understanding of these processes, through characterisation of worn tools, can facilitate design of more resilient materials through chemical and diffusional passivation. However, the unknown reaction conditions, the large number of elements, and the formation of interspersed phases makes for a complex analysis. Here, we demonstrate the use of scanning transmission electron microscopy and energy dispersive X-ray spectroscopy for characterising the interaction layer between a titanium alloy and a cemented carbide tool. Principal component analysis is used to find chemical correlations and help separate signals from embedded phases. Crucially, we evaluate the required X-ray count statistics from simulated spectrum images and theory prior to the experiment. We find no indications of intermediate phases between the original WC and the metallic W interaction layer. Furthermore, we find enrichment of minor constituents in the titanium alloy closest to the tool which alter the solubility of out-diffusing species, suggesting strong interrelations between the diffusion processes., (© 2021 The Authors. Journal of Microscopy published by John Wiley & Sons Ltd on behalf of Royal Microscopical Society.)

The emergence of fourth-generation synchrotrons is prompting the development of new systems for experimental control and data acquisition. However, as general control systems are designed to cover a wide set of instruments and techniques, they tend to become large and complicated, at the cost of experimental flexibility. Here we present Contrast, a simple Python framework for interacting with beamline components, orchestrating experiments and managing data acquisition. The system is presented and demonstrated via its application at the NanoMAX beamline of the MAX IV Laboratory., (open access.)

Ptychographic X-ray computed tomography is a quantitative three-dimensional imaging technique offered to users of multiple synchrotron radiation sources. Its dependence on the coherent fraction of the available X-ray beam makes it perfectly suited to diffraction-limited storage rings. Although MAX IV is the first, and so far only, operating fourth-generation synchrotron light source, none of its experimental stations is currently set up to offer this technique to its users. The first ptychographic X-ray computed tomography experiment has therefore been performed on the NanoMAX beamline. From the results, information was gained about the current limitations of the experimental setup and where attention should be focused for improvement. The extracted parameters in terms of scanning speed, size of the imaged volume and achieved resolutions should provide a baseline for future users designing nano-tomography experiments on the NanoMAX beamline., (© Maik Kahnt et al. 2020.)

Semiconductor nanowires in wrapped, gate-all-around transistor geometry are highly favorable for future electronics. The advanced nanodevice processing results in strain due to the deposited dielectric and metal layers surrounding the nanowires, significantly affecting their performance. Therefore, non-destructive nanoscale characterization of complete devices is of utmost importance due to the small feature sizes and three-dimensional buried structure. Direct strain mapping inside heterostructured GaSb-InAs nanowire tunnel field-effect transistor embedded in dielectric HfO2, W metal gate layers, and an organic spacer is performed using fast scanning X-ray nanodiffraction. The effect of 10 nm W gate on a single embedded nanowire with segment diameters down to 40 nm is retrieved. The tensile strain values reach 0.26% in the p-type GaSb segment of the transistor. Supported by the finite element method simulation, we establish a connection between the Ar pressure used during the W layer deposition and the nanowire strain state. Thus, we can benchmark our models for further improvements in device engineering. Our study indicates, how the significant increase in X-ray brightness at 4th generation synchrotron, makes high-throughput measurements on realistic nanoelectronic devices viable.

III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substrate leading to high dislocation densities. In order to overcome the issue, efforts have gone into selected area growth of nanowires (NWs), using their small footprint in the substrate to grow virtually dislocation-free material. Their geometry is defined by six tall side-facets and a pointed tip which limits the design of optoelectronic devices. Growth of dislocation-free and atomically smooth 3D hexagonal GaN micro-prisms with a flat, micrometer-sized top-surface is presented. These self-forming structures are suitable for optical devices such as low-loss optical cavities for high-efficiency LEDs. The structures are made by annealing GaN NWs with a thick radial shell, reforming them into hexagonal flat-top prisms with six equivalents either m- or s-facets depending on the initial heights of the top pyramid and m-facets of the NWs. This shape is kinetically controlled and the reformation can be explained with a phenomenological model based on Wulff construction that have been developed. It is expected that the results will inspire further research into micron-sized III-nitride-based devices., (© 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

In this work, arrays of predominantly relaxed InGaN platelets with indium contents of up to 18%, free from dislocations and offering a smooth top c -plane, are presented. The InGaN platelets are grown by metal-organic vapor phase epitaxy on a dome-like InGaN surface formed by chemical mechanical polishing of InGaN pyramids defined by 6 equivalent {101̅1} planes. The dome-like surface is flattened during growth, through the formation of bunched steps, which are terminated when reaching the inclined {101̅1} planes. The continued growth takes place on the flattened top c -plane with single bilayer surface steps initiated at the six corners between the c -plane and the inclined {101̅1} planes, leading to the formation of high-quality InGaN layers. The top c -plane of the as-formed InGaN platelets can be used as a high-quality template for red micro light-emitting diodes.

In this work, we present a method to synthesize arrays of hexagonal InGaN submicrometer platelets with a top c-plane area having an extension of a few hundred nanometers by selective area metal-organic vapor-phase epitaxy. The InGaN platelets were made by in situ annealing of InGaN pyramids, whereby InGaN from the pyramid apex was thermally etched away, leaving a c-plane surface, while the inclined {101̅1} planes of the pyramids were intact. The as-formed c-planes, which are rough with islands of a few tens of nanometers, can be flattened with InGaN regrowth, showing single bilayer steps and high-quality optical properties (full width at half-maximum of photoluminescence at room temperature: 107 meV for In 0.09 Ga 0.91 N and 151 meV for In 0.18 Ga 0.82 N). Such platelets offer surfaces having relaxed lattice constants, thus enabling shifting the quantum well emission from blue (as when grown on GaN) to green and red. For single InGaN quantum wells grown on the c-plane of such InGaN platelets, a sharp interface between the quantum well and the barriers was observed. The emission energy from the quantum well, grown under the same conditions, was shifted from 2.17 eV on In 0.09 Ga 0.91 N platelets to 1.95 eV on In 0.18 Ga 0.82 N platelets as a result of a thicker quantum well and a reduced indium pulling effect on In 0.18 Ga 0.82 N platelets. On the basis of this method, prototype light-emitting diodes were demonstrated with green emission on In 0.09 Ga 0.91 N platelets and red emission on In 0.18 Ga 0.82 N platelets.

The 3D microstructure around a tin whisker, and its evolution during heat treatment were studied using scanning 3DXRD. The shape of each grain in the sample was reconstructed using a filtered-back-projection algorithm. The local lattice parameters and grain orientations could then be refined, using forward modelling of the diffraction data, with a spatial resolution of 250 n m . It was found that the tin coating had a texture where grains were oriented such that their c -axes were predominantly parallel to the sample surface. Grains with other orientations were consumed by grain growth during the heat treatment. Most of the grain boundaries were found to have misorientations larger than 15 ∘ , and many coincidence site lattice (CSL) or other types of low-energy grain boundaries were identified. None of the grains with CSL grain boundaries were consumed by grain growth. During the heat treatment, growth of preexisting Cu6Sn5 occurred; these grains were indexed as a hexagonal η phase, which is usually documented to be stable only at temperatures exceeding 186 ∘ C . This indicates that the η phase can exist in a metastable state for long periods. The tin coating was found to be under compressive hydrostatic stress, with a negative gradient in hydrostatic stress extending outwards from the root of the whisker. Negative stress gradients are generally believed to play an essential role in providing the driving force for diffusion of material to the whisker root.

GaN nanowires (NWs) are promising building blocks for future optoelectronic devices and nanoelectronics. They exhibit stronger piezoelectric properties than bulk GaN. This phenomena may be crucial for applications of NWs and makes their study highly important. We report on an investigation of the structure evolution of a single GaN NW under an applied voltage bias along polar [0001] crystallographic direction until its mechanical break. The structural changes were investigated using coherent X-ray Bragg diffraction. The three-dimensional (3D) intensity distributions of the NWs without metal contacts, with contacts, and under applied voltage bias in opposite polar directions were analyzed. Coherent X-ray Bragg diffraction revealed the presence of significant bending of the NWs already after metal contacts deposition, which was increased at applied voltage bias. Employing analytical simulations based on elasticity theory and a finite element method (FEM) approach, we developed a 3D model of the NW bending under applied voltage. From this model and our experimental data, we determined the piezoelectric constant of the GaN NW to be about 7.7 pm/V in [0001] crystallographic direction. The ultimate tensile strength of the GaN NW was obtained to be about 1.22 GPa. Our work demonstrates the power of in operando X-ray structural studies of single NWs for their effective design and implementation with desired functional properties.

Ternary nanowires (NWs) often exhibit varying material composition along the NW growth axis because of different diffusion properties of the precursor molecules. This constitutes a problem for optoelectronic devices for which a homogeneous material composition is most often of importance. Especially, ternary GaInP NWs grown under a constant Ga-In precursor ratio typically show inhomogeneous material composition along the length of the NW due to the complexity of low temperature precursor pyrolysis and relative rates of growth species from gas phase diffusion and surface diffusion that contribute to synthesis of particle-assisted growth. Here, we present the results of a method to overcome this challenge by in situ tuning of the trimethylindium molar fraction during growth of ternary Zn-doped GaInP NWs. The NW material compositions were determined by use of x-ray diffraction, scanning transmission electron microscopy and energy dispersive x-ray spectroscopy and the optical properties by photoluminescence spectroscopy.

III-V Nanowires (NWs) grown with metal-organic chemical vapor deposition commonly show a polytypic crystal structure, allowing growth of structures not found in the bulk counterpart. In this paper we studied the radial overgrowth of pure wurtzite (WZ) GaAs nanowires and characterized the samples with high resolution X-ray diffraction (XRD) to reveal the crystal structure of the grown material. In particular, we investigated what happens when adjacent WZ NWs radially merge with each other by analyzing the evolution of XRD peaks for different amounts of radial overgrowth and merging. By preparing cross-sectional lamella samples we also analyzed the local crystal structure of partly merged NWs by transmission electron microscopy. Once individual NWs start to merge, the crystal structure of the merged segments is transformed progressively from initial pure WZ to a mixed WZ/ZB structure. The merging process is then modeled using a simple combinatorial approach, which predicts that merging of two or more WZ NWs will result in a mixed crystal structure containing WZ, ZB, and 4H. The existence large and relaxed segments of 4H structure within the merged NWs was confirmed by XRD, allowing us to accurately determine the lattice parameters of GaAs 4H. We compare the measured WZ and 4H unit cells with an ideal tetrahedron and find that both the polytypes are elongated in the c -axis and compressed in the a -axis compared to the geometrically converted cubic ZB unit cell.

Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs-GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire-substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.