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13. Modeling of high contrast partially electroded resonators by means of a polynomial approach.

Author

Rabotovao, P. M., Ratolojanahary, F. E., Lefebvre, J. E., Raherison, A., Elmaimouni, L., Gryba, T., and Yu, J. G.

Subjects
ELECTRIC resonators, ELECTRIC potential, ZINC oxide, ELECTROMECHANICAL technology, ALUMINUM nitride
Abstract

This work presents the modeling of high contrast partially electroded resonators by means of a polynomial approach. This method allows easily solving the equations that govern the structure. The boundary, symmetry, and continuity conditions are automatically incorporated into the equations of motion by the use of delta functions for the variables stress (T) and electric displacement (D) and appropriate analytical expression forms for the independent variables, mechanical displacements (u), and electric potential ([lowercase_phi_synonym]). Structure symmetry was used to reduce the number of unknowns. For the zinc oxide (ZnO) resonator in extreme geometrical cases (thin plate and bar cases), a good agreement was obtained between the results of the proposed polynomial approach and those of an analytical approach for both the modal and harmonic analyses. The proposed polynomial approach was used to calculate the 2D resonator electrical admittance (full and partial metallization) near the 1D thickness fundamental mode, and the results highlight the presence of spurious modes. Influence of the metallization rate on the number of spurious modes in the bandwidth is studied. This model can also easily calculate the electromechanical coupling coefficient and the field profiles. Illustrations for both electromechanical coupling coefficient and particle displacement profiles are given for aluminium nitride (AlN), lead zirconate titanate, and ZnO resonators. [ABSTRACT FROM AUTHOR]

Published
2013
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16. Two-dimensional Legendre polynomial modeling of composite bulk acoustic wave resonators.

Author

Raherison, A., Lefebvre, J. E., Ratolojanahary, F. E., Elmaimouni, L., and Gryba, T.

Subjects
*ELECTRIC potential, *ELECTRICAL impedance tomography, *RESONATORS, *MOBILE communication systems, *POLYNOMIALS, *EQUATIONS
Abstract

A bidimensional analysis of 6 mm hexagonal resonators is described using a double orthonormal basis set for the expansion of field quantities. The analysis takes into account the electrical voltage source and by means of a unique formalism along with a single calculation restitutes all the types of resonance whatever the thickness to width ratio value through either modal solutions or electrical impedance. An illustrative example gives the capabilities of the method to investigate spurious modes in laterally bounded resonators. [ABSTRACT FROM AUTHOR]

Published
2010
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17. Legendre polynomial modeling of composite bulk acoustic wave resonators.

Author

Raherison, A., Ratolojanahary, F. E., Lefebvre, J. E., and Elmaimouni, L.

Subjects
LEGENDRE'S polynomials, RESONATORS, ACOUSTIC surface wave devices, MODAL analysis, HARMONIC analysis (Mathematics), MATHEMATICAL models
Abstract

The Legendre polynomial method has been extended to the modeling of bulk acoustic wave (BAW) resonators. Modifications have been made to the formulation in order to account for large differences in the physical properties of adjoining layers and to take into account the electric source. A unique formalism has been obtained which allows for both harmonic and modal analyses. Resonance and antiresonance frequencies, electric input impedance, electromechanical coupling coefficients, and quality factors have been obtained for an aluminum/zinc oxide/aluminum (Al/ZnO/Al) BAW resonator. The results are in excellent agreement with analytical results. [ABSTRACT FROM AUTHOR]

Published
2008
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21. ZnO contour-mode resonator

Author

Tadeusz Gryba, Juien Carlier, Wang, S., Zhao, X., Guo, S., Lefebvre, J. E., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Wuhan University [China], Société Française d'Acoustique - SFA, Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI.ACOU]Engineering Sciences [physics]/Acoustics [physics.class-ph], [SPI]Engineering Sciences [physics], Condensed Matter::Materials Science, [PHYS.MECA.ACOU]Physics [physics]/Mechanics [physics]/Acoustics [physics.class-ph]
Abstract

National audience; This paper reports on design, fabrication and experimental testing of one port ZnO piezoelectric contour- mode MEMS resonator. This is a rectangular plate formed by ZnO layer between two electrodes platinum and aluminium. A vertical electric field is applied to a layer of ZnO and induces in plane dilation of the plate through the d31 piezoelectric coefficient. In this paper we will look at the rectangular plate vibrating in the length-extensional mode and the width-extensional mode. The frequency equations of the length-extension mode and the width-extensional mode are calculated. The equivalent Butterworth Van-Dyke circuit of resonant microstructure is presented. The equivalent parameters of the resonator for the length-extensional mode are expressed and the fs series and fp parallel resonant frequencies are calculated. The method of fabrication of the resonator ZnO is presented. The ZnO layer was deposited using radio frequency magnetron sputtering. The XRD pattern of ZnO is presented. The SEM of contour-mode ZnO 10x5.6 Μm resonator is presented. The electrical characterization of the resonator system was carried out using the S11 scattering parameter measured with a Suss Microtech prober coupled with a Hewlett Packard 8753 Vector Network Analyzer. Key experimentally determined parameters for the contour mode ZnO MEMS resonators are presented. Measured S11 is plotted. Parameters of the ZnO and the AlN contour-mode resonators are compared. The use of contour modes, whose frequencies are set by lithographically defined dimensions, permits the fabrication of multiple filters at arbitrary frequencies on the same chip.

Published
2010

22. Development of IDT sensors for the ultrasonic non-destructive testing

Author

Deboucq, J., Marc Duquennoy, Mohammadi Ouaftouh, Frédéric Jenot, Lefebvre, J. E., Juien Carlier, Mohamed Ourak, Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Published
2010

23. Contour-mode ZnO piezoelectric MEMS resonator

Author

Tadeusz Gryba, Juien Carlier, Zhao, X. Z., Guo, S. S., Wang, S. X., Lefebvre, J. E., Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF), Matériaux et Acoustiques pour MIcro et NAno systèmes intégrés - IEMN (MAMINA - IEMN), Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 (IEMN-DOAE), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-INSA Institut National des Sciences Appliquées Hauts-de-France (INSA Hauts-De-France), Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), and Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)

Subjects
[SPI]Engineering Sciences [physics]
Published
2010

26. Guided waves in general anisotropic layered rectangular rods: An extended orthogonal polynomial approach.

Author

Yu, J. G., Lefebvre, J. E., and Zhang, Ch

Subjects
*STRUCTURAL rods, *ANISOTROPY, *ORTHOGONAL polynomials, *FOURIER analysis, *THEORY of wave motion
Abstract

The orthogonal polynomial approach has been used to solve the guided wave propagation in structures for about 20 years, but was limited until now to one-dimensional structures, that is, structures with a finite dimension in only one direction, such as horizontally infinite flat plates and axially infinite hollow cylinders. This paper extends the orthogonal polynomial approach to two-dimensional structures, that is, structures with finite dimensions in two directions, with illustration on the multilayered rectangular rod. Through numerical comparison with the available results, the validity of the extended polynomial approach is illustrated. The dispersion curves and displacement distributions of various layered rectangular rods are obtained to show their guided wave characteristics. [ABSTRACT FROM AUTHOR]

Published
2016
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36. Real-time atmospheric compensation

Author

Hardy, J. W., Lefebvre, J. E., and Koliopoulos, C. L.

Abstract

We have developed an active optical imaging system capable of correcting optical wave-front errors in real time at frequencies in the kilohertz range. Wave-front errors due to atmospheric turbulence in the propagation path, as well as optical figure aberrations and wave-front errors due to mechanical and thermal changes may be compensated. The system used an ac shearing interferometer, a parallel analog data processor, and a monolithic piezoelectric active mirror arranged in a closed-loop configuration. This compensation system can be applied to apertures of any size; experimental results are shown for a system with 21 correction zones.

Published
1977

37. Acoustooptic processing: real-time ambiguity function processor

Author

Waxin, G., Gazalet, M. G., Rouvaen, J. M., Bridoux, E., and Lefebvre, J. E.

Abstract

In this paper, realization of the real-time ambiguity function with acoustooptic devices is analyzed. The main advantages of the acoustooptic processing methods are first recalled. An optical configuration which allows the real-time display of the ambiguity function and its parallel detection is then derived. An example of technical realization is proposed; some experimental results for typical signals are presented.

Published
1985

38. Remote ultrasonic measurement of the thickness of thin films.

Author

Lefebvre, J. E., Bruneel, C., Delebarre, C., Lutgen, P., and Ecker, T.

Abstract

The current techniques for the measurement of the thickness of films are time consuming or not very reliable when the thickness is in the micron range. In this article, a new noncontacting method for the measurement of the thickness of thin films of various materials is presented. This method relies on the variations of the transmission coefficient of ultrasonic waves through the film. The sensitivity and the relative precision of this measurement can be optimized by an appropriate choice of the ultrasonic frequency according to the range of thicknesses to be measured. The method presented in this article can be set up ''on line'' for regulating the thickness of the films produced. [ABSTRACT FROM AUTHOR]

Published
1988
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39. Wave propagation in functionally graded piezoelectric rods with rectangular cross-section.

Author

YU, J. G., ZHANG, B., LEFEBVRE, J. E., and ZHANG, CH.

Subjects
*THEORY of wave motion, *PIEZOELECTRICITY, *TRANSDUCERS, *ORTHOGONAL polynomials, *PROBLEM solving
Abstract

FOR THE PURPOSE OF DESIGN AND OPTIMIZATION of functionally graded piezoelectric material (FGPM) transducers, wave propagation in FGPM structures has received much attention in the past twenty years. But research focused essentially on semi-infinite structures and one-dimensional structures, i.e., structures with a finite dimension in only one direction, such as horizontally infinite flat plates and axially infinite hollow cylinders. This paper proposes a double orthogonal polynomial series approach to solve the wave propagation problem in a two-dimensional (2D) FGPM structure, namely, an FGPM rod with a rectangular cross-section. The dispersion curves and electric potential distributions are illustrated. [ABSTRACT FROM AUTHOR]

Published
2015

40. Acoustic wave propagation in continuous functionally graded plates: an extension of the Legendre polynomial approach.

Author

Lefebvre JE, Zhang V, Gazalet J, Gryba T, and Sadaune V

Abstract

The propagation of guided waves in continuous functionally graded plates is studied by using Legendre polynomials. Dispersion curves, and power and field profiles are easily obtained. Our computer program is validated by comparing our results against other calculations from the literature. Numerical results are also given for a graded semiconductor plate. It is felt that the present method could be of quite practical interest in waveguiding engineering, non-destructive testing of functionally graded materials (FGMs) to identify the best inspection strategies, or by means of a numerical inversion algorithm to determine through-thickness gradients in material parameters.

Published
2001
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