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This music score was submitted for the Kaleidoscope 2020 Call for Scores, an open access collaboration with the UCLA Music Library.

This music score was submitted for the Kaleidoscope 2020 Call for Scores, an open access collaboration with the UCLA Music Library.

This music score was submitted for the Kaleidoscope 2020 Call for Scores, an open access collaboration with the UCLA Music Library.

Recently, lead halide perovskites have attracted significant attention as promising absorber materials for photoelectrochemical (PEC) solar water splitting. However, charge‐accumulation‐induced ion migration at the interface causes perovskite degradation and efficiency loss. To suppress the charge accumulation and improve the PEC performance of the perovskite photoanode, a simple interface engineering is proposed by decorating the SnO2/perovskite interface with a mixture of polyethylenimine ethoxylated (PEIE) and chlorobenzenesulfonic acid (CBSA). The mixed CBSA+PEIE treatment effectively passivates the oxygen vacancies in SnO2 and adjusts the band alignment between SnO2 and the perovskite. The synergistic effects of the mixture treatment facilitate an effective carrier extraction at the SnO2/perovskite interface, enhance the PEC performance, and improve the stability of the device. The perovskite photoanode exhibits an impressive applied bias photon‐to‐current efficiency of 12.9% with an outstanding durability for 225 h. Furthermore, an unbiased solar water splitting is achieved using all the perovskite photoelectrodes, resulting in a remarkable unassisted solar‐to‐hydrogen efficiency of 10.9% and a continuous 22 h stable operation. [ABSTRACT FROM AUTHOR]

The lack of highly efficient photoanodes presents a significant challenge to implementing the promising strategy of unbiased solar‐to‐fuel conversion. To achieve high‐performance photoanodes, improving their light harvesting and charge separation/injection capabilities is indispensable. Herein, solution‐processed vertically oriented Sb2S3 nanorod arrays on substrate are obtained via a Au seed layer, resulting in improved optoelectronic properties (due to the light scattering effect) and favorable crystallographic orientation of the 1D nanostructure. Moreover, the (NH4)2WS4 treatment caps the surface of the nanorods with an amorphous WSx layer and passivates the sulfur vacancy of Sb2S3, resulting in boosted charge extraction to the reactants. The resulting photoanode is employed to drive an iodide oxidation reaction (IOR), which is a prominent alternative to sluggish water oxidation reactions, exhibiting a high photocurrent density of 13 mA cm−2 at 0.6 V versus the reversible hydrogen electrode. Subsequently, an unassisted hydrogen generation device is demonstrated by combining an Sb2S3 nanorod array‐based photoanode for IOR and a perovskite‐based photocathode for the hydrogen evolution reaction, achieving an efficient hydrogen production current density of 5.7 mA cm−2 without any external bias. [ABSTRACT FROM AUTHOR]

Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent device performance, and bias stability are highly desirable for portable and wearable electronics. Here, the development of low‐voltage indium‐tin‐zinc‐oxide (ITZO) TFTs with excellent device performance and bias stability based on a dual‐channel layer and an anodic‐oxide dielectric layer are reported. An ultra‐thin anodic AlxOy film as a gate dielectric layer is prepared using an anodization process. The dual‐channel layer consists of an oxygen‐uncompensated channel layer and an oxygen‐compensated capping layer. It is confirmed that the dual‐channel structure is effective for enhancing device performance and bias stability in comparison with the single‐channel structure. As a result, the dual‐channel ITZO TFT gated with anodic AlxOy exhibits an effective saturation mobility of 12.56 cm2 Vs−1, a threshold voltage of 0.28 V, a subthreshold swing of 76 mV dec−1, a low‐voltage operation of 1 V, and good operational stability (threshold voltage shift (ΔVTH) < −0.03 V under a negative gate bias stress and ΔVTH < 0.15 under positive gate bias stress of 3600 s). The work shows that the ITZO TFTs, based on a dual‐channel layer and an anodic‐oxide gate dielectric layer, have great potential for low‐power, portable, and wearable electronics. [ABSTRACT FROM AUTHOR]