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11. Simulation of capacitorless DRAM based on polycrystalline silicon with a vertical underlap structure and a separated channel layer

12. Photoluminescence of Chemically and Electrically Doped Two-Dimensional Monolayer Semiconductors.

16. Formation of Cluster‐Structured Metallic Filaments in Organic Memristors for Wearable Neuromorphic Systems with Bio‐Mimetic Synaptic Weight Distributions.

29. Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect

31. Dependence of Positive Bias Stress Instability on Threshold Voltage and its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors

32. Sol–Gel-Processed Y 2 O 3 Multilevel Resistive Random-Access Memory Cells for Neural Networks.

42. Simulation of Capacitorless DRAM Based on the Polycrystalline Silicon Nanotube Structure with Multiple Grain Boundaries.

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