Search

The interplay of charge, spin, orbital and lattice degrees of freedom has recently received great interest due to its potential to improve the magnetocaloric effect (MCE) for the purpose of magnetic cooling applications. Here we propose a new mechanism for a giant inverse MCE in rare-earth tetraborides, especially for Ho1-xDyxB4 (x = 0.0, 0.5, and 1.0). For x = 0.0, 0.5, and 1.0, the maximum entropy changes of the giant inverse MCE are found to be 22.7 J/kgK, 19.6 J/kgK, and 19.0 J/kgK with critical fields of 25 kOe, 40 kOe, and 50 kOe, respectively. It is remarkable that such a giant MCE is realized, even when applying a low magnetic field, which enables a field-tuned entropy change and brings about a significant advantage for several applications. For all compounds, we have systematically studied how the entropy changes as a function of the field and temperature and investigated their correlation with consecutive double transitions, i.e., the magnetic dipolar order at T = TN and the quadrupolar order at T = TQ (TQ < TN). We found that the maximum entropy change occurs at T = TQ and the critical field associated with the meta-magnetic transition, which is in good agreement with the experimental data. Thus, we elucidate that this unique behaviour is attributed to the strong coupling between magnetic dipoles and quadrupoles in the presence of strong spin-orbit coupling and geometric frustration. Our work offers new insights into both the academic interest of multipolar degrees of freedom in magnetic materials and the discovery of giant MCE with various applications for magnetic cooling systems., Comment: 25 pages, 12 figures

Heavy fermion (HF) materials exhibit a rich array of phenomena due to the strong Kondo coupling between their localized moments and itinerant electrons. A central question in their study is to understand the interplay between magnetic order and charge transport, and its role in stabilizing new quantum phases of matter. Particularly promising in this regard is a family of tetragonal intermetallic compounds Ce{$TX$}$_2$ ($T=$ transition metal, $X=$ pnictogen), that includes a variety of HF compounds showing $T$-linear electronic specific heat $\bf{C_e \sim \gamma T}$, with $\gamma\sim$ 20-500 mJ$\cdot$mol$^{-1}$~K$^{-2}$, reflecting an effective mass enhancement ranging from small to modest. Here, we study the low-temperature field-tuned phase diagram of high-quality CeAgBi$_2$ using magnetometry and transport measurements. We find an antiferromagnetic transition at ${T_{N} = 6.4}$~K with weak magnetic anisotropy and the easy axis along the $c$-axis, similar to previous reports (${T_{N} = 6.1}$~K). This scenario, along with the presence of two anisotropic Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions, leads to a rich field-tuned magnetic phase diagram, consisting of five metamagnetic transitions of both first and second order. In addition, we unveil an anomalous Hall contribution for fields $H<54$ kOe which is drastically altered when $H$ is tuned through a trio of transitions at 57, 78, and 84~kOe, suggesting that the Fermi surface is reconstructed in a subset of the metamagnetic transitions., Comment: (*equal contribution)

We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual electroforming marked by resistance increasing and capacitance decreasing is observed in current-voltage and capacitance characteristics. By the Auger electron spectroscopy analysis, a model based on Cu ion and oxygen vacancy drift, and thickness change of the SiOx layer at the CuOx/Si interface was proposed for the memristive switching and gradual electroforming, respectively. The present work would be meaningful for the preparation of forming-free and homogeneous memristive devices., Comment: 17 pages, 8 figures

The high reset current IR in unipolar resistance switching now poses major obstacles to practical applications in memory devices. In particular, the first IR-value after the forming process is so high that the capacitors sometimes do not exhibit reliable unipolar resistance switching. We found that the compliance current Icomp is a critical parameter for reducing IR-values. We therefore introduced an improved, simple, easy to use Icomp-limiter that stabilizes the forming process by drastically decreasing current overflow, in order to precisely control the Icomp- and subsequent IR-values., Comment: 15 pages, 4 figures

The high reset current, IR, in unipolar resistance switching is an important issue which should be resolved for practical applications in nonvolatile memories. We showed that,during the forming and set processes, the compliance current, Icomp, can work as a crucial parameter to reduce IR. Doping with Co or Mn can significantly reduce the leakage current in capacitors made using SrTiOx film, opening a larger operation window for Icomp. By decreasing Icomp with acceptor doping, we could reduce IR in SrTiOx films by a factor of approximately 20. Our work suggests that the decrease of Icomp by carrier doping could be a viable alternative for reducing IR in unipolar resistance switching., Comment: 14 pages, 3 figures

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation, SR/R2, in the low resistance state displayed a power law dependence on the resistance R with exponent w = 1.6. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices., Comment: 15 pages, 3 figures

In unipolar resistance switching of NiO capacitors, Joule heating in the conducting channels should cause a strong nonlinearity in the low resistance state current-voltage (I-V) curves. Due to the percolating nature of the conducting channels, the reset current IR, can be scaled to the nonlinear coefficient Bo of the I-V curves. This scaling relationship can be used to predict reset voltages, independent of NiO capacitor size; it can also be applied to TiO2 and FeOy capacitors. Using this relation, we developed an error correction scheme to provide a clear window for separating reset and set voltages in memory operations.

Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement and practical applications. Using NiO capacitors, we investigated the distributions of the RESET voltage and current. We found that they scaled with the resistance value Ro in the low resistance state, and that the scaling exponents varied at Ro = 30 Ohm. We explain these intriguing scaling behaviors and their crossovers by analogy with percolation theory. We show that the connectivity of conducting filaments plays a crucial role in the RESET process., Comment: 17 pages, 4 figures

We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongly nonlinear, with variations in the resistance R as large as 60%. This strong nonlinear behavior was most likely caused by Joule heating of conducting filaments inside the films. By carefully controlling the applied dc bias, we obtained several low resistance states, whose values of the third harmonic coefficient B3f were proportional to R2+w (with w = 2.07). This suggested that the resistance changes of the NiO films were accompanied by connectivity changes of the conducting filaments, as observed in classical percolating systems., Comment: 17 pages, 3 figures

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond percolation model that describes the forming and rupturing of conducting filaments. Assuming Joule heating and thermal dissipation processes in the bonds, we explain how both RS types could occur and be controlled by temperature. We show that these unipolar RS are closely related and can be explained by a simple unified percolation picture., Comment: 16 pages, 5 figures

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE} \geq 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE} \leq 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory., Comment: 14 pages, 3 figures

We report the detailed current-voltage (I-V) characteristics of resistance switching in NiO thin films. In unipolar resistance switching, it is commonly believed that conducting filaments will rupture when NiO changes from a low resistance to a high resistance state. However, we found that this resistance switching can sometimes show abnormal behavior during voltage- and current-driven I-V measurements. We used the random circuit breaker network model to explain how abnormal switching behaviors could occur. We found that this resistance change can occur via a series of avalanche processes, where conducting filaments could be formed as well as ruptured., Comment: 12 pages, 5 figures

A muon range detector (MRD) has been constructed as a near detector for the KEK-to-Kamioka long-baseline neutrino experiment (K2K). It monitors the neutrino beam properties at the near site by measuring the energy, angle and production point of muons produced by charged-current neutrino interaction. The detector has been working stably since the start of the K2K experiment., Comment: 18 pages, 17 eps-figures, uses elsart.cls. To be published in Nucl. Instr. and Methods A

We study the spatio-temporal behavior of simple coupled map lattices with periodic boundary conditions. The local dynamics is governed by two maps, namely, the sine circle map and the logistic map respectively. It is found that even though the spatial behavior is irregular for the regularly coupled (nearest neighbor coupling) system, the spatially synchronized (chaotic synchronization) as well as periodic solution may be obtained by the introduction of three long range couplings at the cost of three nearest neighbor couplings., Comment: 5 pages (revtex), 7 figures (eps, included)