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5. Ultralow-dielectric-constant amorphous boron nitride

23. Ultralow-dielectric-constant amorphous boron nitride

37. High-performance and scalable metal-chalcogenide semiconductors and devices via chalco-gel routes

39. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

40. Chemically Homogeneous and Thermally Robust Ni1–xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition

43. Defect states in amorphous SiNx:H compounds using thermally stimulated exo-electron emission

46. Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement

47. Effective work function engineering for a TiN/XO(X = La, Zr, Al)/SiO2 stack structures

48. Band alignment and defect states in amorphous GaInZnO thin films grown on SiO2/Si substrates

50. In situ observation of vacancy dynamics during resistance changes of oxide devices.

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