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We conducted experiments utilizing the scattering effect of zinc oxide (ZnO) to enhance the photoluminescence (PL) intensity of cesium lead bromide (CsPbBr3) perovskite quantum dots (QDs). This study involved investigating the method for creating a CsPbBr3 and ZnO mixture and determining the optimal mixing ratio. A mixture dispersion of CsPbBr3 and ZnO, prepared at a 1:0.015 weight ratio through shaking, was fabricated into a film using the spin coating method. The PL intensity of this film showed a relative increase of 20% compared to the original CsPbBr3 QD film without ZnO. The scattering effect of ZnO was confirmed through ultraviolet-visible (UV-Vis) absorption and transient PL experiments, and a long-delayed exciton lifetime was observed in the optimized mixture dispersion thin film. The morphology of the fabricated film was characterized using field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and atomic force microscopy (AFM). For the CsPbBr3-ZnO mixture (1:0.0015) film, crystal domains of approximately 10 nm were observed using TEM. Through AFM analysis, an excellent film roughness of 4.6 nm was observed, further confirming the potential of perovskite QD/ZnO composite films as promising materials for enhanced photoconversion intensity. In future studies, applying this method to other perovskite materials and metal oxides for the optimization of photoconversion composite materials is expected to enable the fabrication of highly efficient perovskite QD/metal oxide composite films. [ABSTRACT FROM AUTHOR]

Two new yellow azo pyridone derivatives, (E)-6-hydroxy-1-(3-methoxypropyl)-4-methyl-2-oxo-5-(p-tolyldiazenyl)-1,2-dihydropyridine-3-carbonitrile (APY-M) and 5,5′-((1E,1′E)-(methylenebis(4,1-phenylene))bis(diazene-2,1-diyl))bis(6-hydroxy-4-methyl-2-oxo-1,2-dihydropyridine-3-carbonitrile) (APY-D), were designed and synthesized as yellow colorants for image sensors. The properties of these new compounds were evaluated in both solution and color filter film forms, focusing on their optical and thermal characteristics. The molar extinction coefficient values of APY-M and APY-D in solution were found to be 2.7 × 105 and 3.0 × 105 L/mol·cm, respectively. The transmittance of the newly synthesized compounds met commercial requirements, showing values below 0.21% at 435 nm and above 97.1% at 530 nm. APY-D exhibited a molar extinction coefficient value in solution that was 1.15 times higher than that of the commercially used yellow colorant Disperse Yellow 241. Both newly synthesized compounds satisfied the decomposition temperature requirement of over 230 °C, which is essential for the color filter manufacturing process in image sensors. In particular, APY-D, with its dimeric structure and increased molecular weight, demonstrated enhanced thermal stability, with a 50 °C increase in decomposition temperature compared to Disperse Yellow 241. Color filter films for image sensors were fabricated using the new compounds, and their thermal resistance was evaluated. APY-D maintained its transmittance due to the enhanced thermal stability provided by its dimer structure and increased molecular weight. Consequently, APY-D is anticipated to be a promising candidate for use as a yellow colorant in image sensors, owing to its excellent optical and thermal properties. [ABSTRACT FROM AUTHOR]

We applied 4,6-Bis(3,5-di(pyridin-2-yl)phenyl)-2-methylpyrimidine (B2PyMPM), a material with a wide bandgap and excellent electron mobility, as the host for the emissive layer in red, green, and blue organic phosphorescence-emitting devices. In the case of red emission, it exhibited a stable and outstanding external quantum efficiency (EQE) of 10.2% along with color coordinates (0.68, 0.31), indicating its potential as a candidate material for smartphone displays. For green and blue emissions, relatively low electroluminescence characteristics were observed due to insufficient energy transfer. With a high triplet energy level (T1) of 2.89 eV, B2PyMPM holds promise for use with other phosphorescent dopants in the future. [ABSTRACT FROM AUTHOR]

We designed and synthesized new indolocarbazole-triazine derivatives, 9-di-tert-butyl-5,7-bis(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-P-ICz) and 3,9-di-tert-butyl-5,7-bis(5′-(4,6-diphenyl-1,3,5-triazin-2-yl)-[1,1′:3′,1″-terphenyl]-2′-yl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-TP-ICz), as new bipolar host materials for red phosphorescent OLEDs. In the film state, 2TRZ-P-ICz and 2TRZ-TP-ICz exhibited photoluminescence maxima at 480 nm and 488 nm, respectively. The dipole moment characteristics of the new compounds under various solvent conditions were investigated using the Lippert–Mataga equation. The results showed that the dipole moment of 2TRZ-P-ICz is 26.9D, while that of 2TRZ-TP-ICz is 21.3D. The delayed fluorescence lifetimes were 0.188 μs for 2TRZ-P-ICz and 2.080 μs for 2TRZ-TP-ICz, with 2TRZ-TP-ICz showing TADF characteristics. Additionally, 2TRZ-TP-ICz was found to have a ΔEST of less than 0.2 eV. The triplet energy levels of the newly synthesized bipolar host materials were found to be 2.72 and 2.75 eV, confirming their suitability for use in red phosphorescent OLEDs. To investigate the carrier mobility of the synthesized materials, hole-only devices and electron-only devices were fabricated and tested. The hole mobility value at 1V was found to be 3.43 × 10−3 cm2/Vs for 2TRZ-P-ICz and 2.16 × 10−3 cm2/Vs for 2TRZ-TP-ICz. For electron mobility at 1V, 2TRZ-P-ICz showed a value of 4.41 × 10−9 cm2/Vs, while 2TRZ-TP-ICz exhibited a value of 9.13 × 10−9 cm2/Vs. As a result, when the new material was used as a host in red phosphorescent OLEDs, 2TRZ-TP-ICz achieved a current efficiency of 9.92 cd/A, an external quantum efficiency of 13.7%, CIE coordinates of (0.679, 0.319), and an electroluminescence maximum wavelength of 626 nm. [ABSTRACT FROM AUTHOR]

We designed and successfully synthesized a novel anthracene-based host material, 10-(4-(naphthalen-1-yl)phenyl)-9-(naphthalen-3-yl)anthracene (2-NaAn-1-PNa). The 2-NaAn-1-PNa exhibited a PL max at 440 nm in film state and demonstrated a wide band gap of 2.95 eV, indicating its suitability as a blue host material. In an OLED device using 2-NaAn-1-PNa as the host and 3Me-1Bu-TPPDA as the dopant, real blue emission was achieved with an electroluminescence maximum (ELmax) at 460 nm and Commission Internationale de L'Eclairage coordinates of (0.133, 0.141). The device exhibited excellent EL characteristics, with an external quantum efficiency of 8.3% and a current efficiency of 9.3 cd/A at 10 mA/cm2. Furthermore, the efficiency roll-off was limited to only 1.9% up to 4000 nits, demonstrating exceptional performance. [ABSTRACT FROM AUTHOR]

Two blue-emitting materials, 4-(12-([1,1′:3′,1″-terphenyl]-5′-yl)chrysen-6-yl)-N,N-diphenylaniline (TPA-C-TP) and 6-([1,1′:3′,1″-terphenyl]-5′-yl)-12-(4-(1,2,2-triphenylvinyl)phenyl)chrysene (TPE-C-TP), were prepared with the composition of a chrysene core moiety and terphenyl (TP), triphenyl amine (TPA), and tetraphenylethylene (TPE) moieties as side groups. The maximum photoluminescence (PL) emission wavelengths of TPA-C-TP and TPE-C-TP were 435 and 369 nm in the solution state and 444 and 471 nm in the film state. TPA-C-TP effectively prevented intermolecular packing through the introduction of TPA, a bulky aromatic amine group, and it showed an excellent photoluminescence quantum yield (PLQY) of 86% in the film state. TPE-C-TP exhibited aggregation-induced emission; the PLQY increased dramatically from 0.1% to 78% from the solution state to the film state. The two synthesized materials had excellent thermal stability, with a high decomposition temperature exceeding 460 °C. The two compounds were used as emitting layers in a non-doped device. The TPA-C-TP device achieved excellent electroluminescence (EL) performance, with Commission Internationale de L′Eclairage co-ordinates of (0.15, 0.07) and an external quantum efficiency of 4.13%, corresponding to an EL peak wavelength of 439 nm. [ABSTRACT FROM AUTHOR]

We synthesized three materials, namely, TDBA-Ge, mTDBA-Ge, and mTDBA-2Ge, as blue host emitters. These materials incorporate a tetraphenylgermanium (TPG) group with a germanium atom into the main backbone of 5,9-dioxa-13b-boranaphtho[3,2,1-de]anthracene (DOBNA), demonstrating multiple-resonance-induced thermally activated delayed fluorescence (MR-TADF). All three materials exhibited high thermal stability with a glass transition temperature (Tg) exceeding 100 °C. The increased molecular distance also demonstrated the inhibition of self-quenching between molecules in the packing. All three materials showed ΔEST values within 0.3 eV, confirming their potential for MR-TADF characteristics. Especially, mTDBA-2Ge exhibited the lowest ΔEST value of 0.11 eV among the three materials. When these host materials were doped with the conventional dopant ν-DABNA, efficient energy transfer between the two materials was observed, and the resulting device efficiency was confirmed. In comparison to TDBA-Ph, which lacks the TPG moiety and contains only phenyl groups, an approximately 1.5–1.8-fold increase in external quantum efficiency max (EQEmax) was observed. Among the three materials, mTDBA-2Ge exhibited the highest efficiency, with an EQEmax of 24.41%. [ABSTRACT FROM AUTHOR]

New blue-light-emitting materials, 2,7-Bis-[1,1′;3′,1″]terphenyl-spiro-fluorene[3,4]naphthalene (TP-AFF-TP) and spiro-fluorene[3,4]-5-terphenylnaphthalene (TP-ASF) were synthesized based on a fused core with anthracene and spirofluorene. The photoluminescence (PL) maximum values of TP-AFF-TP and TP-ASF in film states exhibited 477 nm and 467 nm within the blue region, respectively. Degradation temperature (Td) values for TP-AFF-TP and TP-ASF were very high at 481 °C and 407 °C, respectively. TP-AFF-TP and TP-ASF exhibited power efficiencies (PE) of 1.03 lm/W and 2.39 lm/W, respectively, along with luminance efficiencies (LE) of 2.55 cd/A and 5.17 cd/A, respectively, in nondoped organic light-emitting diode (OLED) devices in which the newly synthesized compounds were employed as emissive layers. The achieved CIE values were (0.25, 0.45) for TP-AFF-TP and (0.17, 0.31) for TP-ASF. Furthermore, when TP-ASF was utilized as one of the emissive materials in solution-processed white OLED devices, the resultant device showcased a notably high LE of 3.13 cd/A, a PE of 2.69 lm/W, and a white CIE value of (0.30, 0.34). [ABSTRACT FROM AUTHOR]