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Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS2–WS2 to prove the consequences of disorder-mediated deformation in the band structure. Moreover, we directly observed variations in the metal composition of the multi-disordered nanoscale alloy Mo1−x WxS2, consisting of atomic vacancies, crystal edges, and distinct nanocrystallites. Our findings through tip-enhanced Raman spectroscopy (TERS) imply that a tens of nanometer area of continuous TMDs alloy forms the multi-disordered interface of the lateral heterostructure. The results of this study could present the way for the evaluation of the TMDs lateral heterostructure for excitonic applications.

We consider the problem of detecting a shift in the mean of a multivariate time-series process with general marginal distributions and general cross- and auto-correlation structures. We propose a distribution-free monitoring procedure that does not need model fitting or trial-and-error calibration for control limits, which makes the procedure convenient to be implemented when a facility consists of many processes to be monitored. The main idea is to convert each observation vector into a one-dimensional T 2 quantity that captures cross-correlation. The T 2 quantities form a univariate auto-correlated process, and CUSUM statistics are constructed on the T 2 quantities. Then using the fact that the CUSUM statistics on the auto-correlated process behave as a reflected Brownian motion asymptotically under some conditions, the control limits of the CUSUM procedure are analytically determined by setting the first-passage time of the Brownian motion equal to a target in-control average run length. We compare the performance of our procedure with three competing procedures on simulated data with various cross- and auto-correlation and real data from a wafer etching process. The proposed procedure delivers actual in-control average run lengths close to the target and shows comparable or better performance in detecting a shift in mean than the competitors. [ABSTRACT FROM AUTHOR]

Transition metal dichalcogenide (TMDs) heterostructure, particularly the lateral heterostructure of two different TMDs, is gaining attention as ultrathin photonic devices based on the charge transfer (CT) excitons generated at the junction. However, the characteristics of the interface of the lateral heterostructure, determining the electronic band structure and alignment at the heterojunction region, have rarely been studied due to the limited spatial resolution of nondestructive analysis systems. In this study, we investigated the confined phonons resulting from the phonon-disorder scattering process involving multiple disorders at the lateral heterostructure interface of MoS2–WS2 to prove the consequences of disorder-mediated deformation in the band structure. Moreover, we directly observed variations in the metal composition of the multi-disordered nanoscale alloy Mo1−xWxS2, consisting of atomic vacancies, crystal edges, and distinct nanocrystallites. Our findings through tip-enhanced Raman spectroscopy (TERS) imply that a tens of nanometer area of continuous TMDs alloy forms the multi-disordered interface of the lateral heterostructure. The results of this study could present the way for the evaluation of the TMDs lateral heterostructure for excitonic applications. [ABSTRACT FROM AUTHOR]

A photomultiplication (PM)‐type organic photodetector (OPD) that exploits the ionic motion in CsPbI3 perovskite quantum dots (QDs) is demonstrated. The device uses a QD monolayer as a PM‐inducing interlayer and a donor–acceptor bulk heterojunction (BHJ) layer as a photoactive layer. When the device is illuminated, negative ions in the CsPbI3 QD migrate and accumulate near the interface between the QDs and the electrode; these processes induce hole injection from the electrode and yield the PM phenomenon with an external quantum efficiency (EQE) >2000% at a 3 V applied bias. It is confirmed that the ionic motion of the CsPbI3 QDs can induce a shift in the work function of the QD/electrode interface and that the dynamics of ionic motion determines the response speed of the device. The PM OPD showed a large EQE‐bandwidth product >106 Hz with a −3 dB frequency of 125 kHz at 3 V, which is one of the highest response speeds reported for a PM OPD. The PM‐inducing strategy that exploits ionic motion of the interlayer is a potential approach to achieving high‐efficiency PM OPDs. [ABSTRACT FROM AUTHOR]

Nanoscale defects in two-dimensional (2D) transition metal dichalcogenides (TMDs) alter their intrinsic optical and electronic properties, and such defects require investigation. Atomic-resolution techniques such as transmission electron microscopy detect nanoscale defects accurately but are limited in terms of clarifying precise chemical and optical characteristics. In this study, we investigated nanoscale heterogeneous defects in a single-crystalline hexagonal WS2 monolayer using tip-enhanced Raman spectroscopy (TERS). We observed the Raman properties of heterogeneous defects, which are indicated by the shifted A1′(Γ) modes appearing on the W- and S-edge domains, respectively, with defect-induced Raman (D) mode. In the edge region, various Raman features occur with nanoscale defects. In addition, the TERS signals from single-crystalline WS2 indicate the existence of two majority defects in each domain, which imply S- and W-dominated vacancies. Quantum mechanical computations were performed for each majority defect and demonstrated the defect-induced variation in the vibrational phonon modes. TERS imaging promises to be a powerful technique for determining assorted nanoscale heterogeneous defects as well as for investigating the properties of other nanomaterials. [ABSTRACT FROM AUTHOR]