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Your search keyword '"Lebiadok, Y."' showing total 18 results
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18 results on '"Lebiadok, Y."'

12. Three-Wave CO2 Laser with Acousto-Optic Q-Switching.

Author

Gorobets, V. A., Lebiadok, Y. V., Mikulich, R. Y., and Shavel, S. S.

Subjects
*Q-switching, *CARBON dioxide, *LASERS, *ACQUISITION of data, *ELECTRONIC data processing
Abstract

The operating principle and features of the oscillating process for a three-wave CO2 laser with acousto-optic Q-switching are described. Optimization of the active-medium composition and its excitation conditions as well as the choice of oscillating lines allow oscillation with an output power up to 5 W per line in a stable multiwave mode to be obtained. An efficient Q-switching method for a three-wave CO2 laser is demonstrated and enables the output radiation to be controlled in both a wide spectral range and a wide range of modulation frequencies. A method for separating signals with different wavelengths by spacing signals in time has been experimentally implemented using an external selective modulator to simplify data acquisition and processing. [ABSTRACT FROM AUTHOR]

Published
2020
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16. Powerful all-solid-state multiwave laser for aerosol lidars

Author

Ryabtsev, G. I., primary, Bogdanovich, M. V., additional, Grigor’ev, A. V., additional, Kabanov, V. V., additional, Kostik, O. E., additional, Lebiadok, Y. V., additional, Lepchenkov, K. V., additional, Osipenko, F. P., additional, Ryabtsev, A. G., additional, Chaikovsky, A. P., additional, Shchemelev, M. A., additional, and Tsitavets, U. S., additional

Published
2014
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18. INFLUENCE OF VACANCIES ON INDIUM ATOM DISTRIBUTION IN InGaAs AND InGaN COMPOUNDS.

Author

Bezyazychnaya, T. V., Kabanau, D. M., Kabanov, V. V., Lebiadok, Y. V., Ryabtsev, A. G., Ryabtsev, G. I., Zelenkovskii, V. M., and Mehta, S. K.

Subjects
INDIUM gallium arsenide, NITROGEN compounds, ARSENIC compounds, CLUSTERING of particles, DISTRIBUTION (Probability theory)
Abstract

It has been theoretically ascertained that for defect-free InGaAs and InGaN compounds the uniform distribution of indium atoms is more energetically preferable than the clustering distribution. The presence of gallium and arsenic vacancy in InGaAs and nitrogen vacancy in InGaN facilitates indium atom clustering distribution. It has been shown that the increase in the indium content in InGaAs and InGaN compounds leads to the decrease of the formation energy of gallium, arsenic and nitrogen vacancies. [ABSTRACT FROM AUTHOR]

Published
2015

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