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Your search keyword '"Lebedev, D. V."' showing total 334 results
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334 results on '"Lebedev, D. V."'

2. Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

Author

Lebedev, D. V., Kulagina, M. M., Troshkov, S. I., Bogdanov, A. A., Vlasov, A. S., Davydov, V. Yu., Smirnov, A. N., Merz, J. L., Kapaldo, J., Gocalinska, A., Juska, G., Moroni, S. T., Pelucchi, E., Barettin, D., Rouvimov, S., and Mintairov, A. M.

Subjects
Physics - Optics
Abstract

Formation, emission and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs having nano-pan-cake shape have height of ~2 nm, lateral size of 20-50 nm and density of ~5x109 cm-2. Their emission observed at ~940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character indicating In-As intermixing, as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having dimeter ~3.2 mkm and providing free spectral range of ~27 nm and quality factors up to Q~13000. Threshold of ~50 W/cm2 and spontaneous emission coupling coefficient of ~0.2 were measured for this MD-QD system.

Published
2017
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8. Lasing via excited state of type A InP/GaInP quantum dots embedded in microdisks.

Author

Lebedev, D. V., Mintairov, A. M., Vlasov, A. S., Kulagina, M. M., Guseva, Yu. A., Troshkov, S. I., Juska, G., Pelucchi, E., and Gocalinska, A.

Subjects
*EXCITED states, *QUANTUM dots, *QUALITY factor, *PHOTOLUMINESCENCE
Abstract

We describe the growth, material characterization, and lasing of InP/GaInP quantum dot (QD) microdisks (diameter D = 2.2 μ m, quality factor Q ∼ 9000) with an emission lasing line of 693 nm (77 K). We demonstrate that MOVPE growth can result in two types of InP/GaInP QDs, differing in height (type A h ∼ 5 –10 nm, type B h ∼ 20 nm), whose emission has different decay lifetimes (τ A = 0.6 ns, τ B = 2.4 ns). We show, importantly for technological microlasing applications, that lasing occurs via the excited states of type A QDs, as inferred from a number of experimental results: power-dependent photoluminescence, time-resolved experiments, and temperature dependence of the generation threshold. [ABSTRACT FROM AUTHOR]

Published
2022
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12. Selective Area Epitaxy of InP/GaInP2Quantum Dots from Metal-Organic Compounds.

Author

Vlasov, A. S., Afanasev, K. M., Galimov, A. I., Kalyuzhnyy, N. A., Lebedev, D. V., Malevskaya, A. V., Mintairov, S. A., Rakhlin, M. V., Salii, R. A., Mozharov, A. M., Mukhin, I. S., and Mintairov, A. M.

Subjects
METAL organic chemical vapor deposition, QUANTUM dots, ORGANOMETALLIC compounds, EPITAXY, LITHOGRAPHY
Abstract

Experiments on the growth of self-assembled InP/GaInP2 quantum dots in dielectric mask 0.1–1 μm apertures by MOVPE epitaxy have been carried out. A sequence of operations for the implementation of the lift-off lithography method is proposed and implemented. The possibility of obtaining apertures with 100 nm diameter and less is shown. Combination of thermally deposited SiO2 and wet etching is shown to produce minimal amount of nonradiative defects and results in a stable PL signal from single QDs in the aperture. [ABSTRACT FROM AUTHOR]

Published
2024
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47. Piezo-electric fields and state-filling photo-luminescence in natural InP/GaInP2 Wigner molecule structures

Author

Mintairov, A. M., primary, Ankundinov, A. V., additional, Kalyuzhnyy, N. A., additional, Lebedev, D. V., additional, Mintairov, S. A., additional, Pavlov, N. V., additional, Galimov, A. I., additional, Rakhlin, M. V., additional, Salii, R. A., additional, Toropov, A. A., additional, Vlasov, A. S., additional, Barettin, D., additional, der Maur, M. Auf, additional, and Blundell, S. A., additional

Published
2021
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50. Synthesis of Au/Si nanostructures by STM lithography

Author

null Dubrovsky V. G., null Mukhin I. S., null Arkhipov A. V., null Golubok A. O., null Petukhov A. E., null Mozharov A. M., null Shkoldin V. A., and null Lebedev D. V.

Abstract

A technique for synthesizing nanostructures by current lithography in a scanning tunneling microscope (STM lithography) in layered Au/Si structures has been developed. An experimental dependence of the geometric dimensions of the created nanostructures on the time of current STM lithography has been obtained. A theoretical model for the growth of nanostructures is proposed, which explains the nonlinear dependence of the radius of the obtained nanostructures on time with saturation in the region of large radii. Keywords: Au/Si nanostructures, STM lithography, growth rate, modeling.

Published
2022

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