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The simulation results of the switching times of ultrathin body semiconductor-on-insulator n-channel field-effect transistors with 22- and 17-nm gate lengths obtained for high mobility substrates and compared to Si is presented.

The self-consistent solutions of ultrathin body device structures are presented to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. The 2-D electrostatics considerations are at least as important as quantum-mechanical ones in understanding the subthreshold scaling behavior of ultrathin body devices, as shown through numerical simulations.

The charge distribution of carriers induced at the end of a quantum well by an auxiliary confining potential perpendicular to the plane of the well was investigated. In the case of an epitaxially-grown selectively-doped layer, the induced electron density was observed to be proportional to the well width. As the quantum state was driven above the band offset, an additional charge originating from the dopants was also observed.

A study of the analytic derivation of the direct current and low frequency alternating current behavior of the positive-negative step suggests that all preexisting treatments are incorrect. This is because not all contributions to the diode current are incorporated. Inaccurate equivalent circuit topologies and incorrect boundary conditions for minority carrier concentrations are also flaws in all preexisting treatments. A new analytic equivalent circuit model that includes correct boundary conditions is thus proposed.

We present self-consistent solutions of ultrathin body device structures to understand the influence of quantum-mechanical confinement on the predictions of classical scaling theory. We show that, two-dimensional (2-D) electrostatics considerations play a more dominant role than quantum-mechanical effects in the subthreshold behavior of ultrathin fully depleted silicon-on-insulator structures. We also show how modifications to the doping profile can be used to alleviate 2-D short-channel effects. [ABSTRACT FROM AUTHOR]

Self-consistent numerical solutions of the Poisson and Schrödinger equations have been obtained for the states of electrons under a narrow gate or under a narrow slit in a metal-oxide-silicon structure with an inner and an outer gate. For the cases considered (30-nm-wide gate and 80-nm-wide slit), the states of motion parallel to the Si-SiO2 interface are more closely spaced than the states for motion perpendicular to the interface. It should be possible, for the structures considered, to achieve a dynamically one-dimensional system with an electron density <=106 cm-1. [ABSTRACT FROM AUTHOR]