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A set of small and lightweight laser retro-reflector arrays (LRAs) was fabricated and tested for use on lunar landersunder NASA's Commercial Lunar Payload Service program. Each array contains eight 1.27-cm-diameter cornercube retro-reflectors mounted on a dome-shaped aluminum structure. The arrays are 5.0cmin diameter at the base,1.6 cm in height, and 20 g in mass. They can be tracked by an orbiting laser altimeter, such as the Lunar OrbiterLaser Altimeter, froma distance of a few hundred kilometers or by a landing lidar on future lunar landers. TheLRAsdemonstrated a diffraction-limited optical performance. They were designed and tested to survive and function ontheMoon for decades,well after the lander missions are completed.

Total ionizing dose (TID) and single-event effect (SEE) room-temperature radiation test results are presented for developmental prototype 4H-SiC junction field effect transistor (JFET) semiconductor integrated circuits (ICs) that have demonstrated prolonged operation in extremely high-temperature (500 °C) environments. The devices tested demonstrated over 7 Mrad(Si) TID tolerance and no destructive SEE susceptibility.

Total ionizing dose, displacement damage dose, and single-event effect testing were performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, bipolar devices, and FPGAs.

After four decades of single-event effects testing, radiation engineers face pressure to find alternatives to reduce or eliminate testing costs. Many of these alternatives focus on use of archival test data to bound SEE risk for similar parts. This presentation examines the challenges and limitations of such analyses and suggests analysis techniques and goals that are likely to be most appropriate for such efforts.

Dr. Jean-Marie Lauenstein, NASA Goddard Space Flight Center, will present the radiation challenges of adopting wide-bandgap semiconductors for space applications. Wide-bandgap devices are attractive for space applications due to improved performance such as faster switching speeds, lower power losses, and their ability to operate at higher temperature as compared with their silicon counterparts. Their tolerance to total ionizing dose levels (> 100 krad(Si)) further enhances the desirability of these technologies. This short course will focus on silicon carbide and gallium nitride power rectifying, switching, and RF devices as these technologies are now readily available commercially. The radiation hardness assurance issues presented by the heavy-ion radiation environment will be discussed.

The purpose of this testing was to obtain total ionizing dose (TID) information about custom-built research prototype silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) capable of prolonged operation in extremely high-temperature (500 degrees Centigrade) environments. The circuits included ring oscillators and operational amplifiers as well as individual n-channel JFETs. This technology is being considered for use in high temperature, high pressure applications such as Long-Lives Surface System Explorer (LLISSE). These devices were developed at NASA Glenn Research Center (GRC). Testing occurred from July 9th-July 13th, 2018.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Heavy-ion radiation effects knowledge across SiC power devices is examined and insights for more rugged designs and appropriate test methods geared toward space applications are extracted. The conclusions drawn are supported by recent publicly reported heavy-ion test results of a modified SiC MOSFET design.

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

Single-event effect (SEE) test results are presented for commercial grade, automotive grade, and radiation-hardened trench power MOSFETs.

Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

Recent work for the NASA Electronic Parts and Packaging Program Power MOSFET task is presented. The Task technology focus, roadmap, and partners are given. Recent single-event effect test results on commercial, automotive, and radiation hardened trench power MOSFETs are summarized with an emphasis on risk of using commercial and automotive trench-gate power MOSFETs in space applications.

Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages applied during heavy-ion exposure. In addition, TCAD simulations are used to give insight on the physical mechanisms involved.

We present destructive single-event effects characterization of a variety of silicon Schottky diodes from different manufacturers. We also discuss suitable derating guidelines.

Mission Statement: The NASA Electronic Parts and Packaging (NEPP) Program provides NASA's leadership for developing and maintaining guidance for the screening, qualification, test. and usage of EEE parts by NASA as well as in collaboration with other government Agencies and industry. NASA Space Technology Mission Directorate (STMD) "STMD rapidly develops, demonstrates, and infuses revolutionary, high-payoff technologies through transparent, collaborative partnerships, expanding the boundaries of the aerospace enterprise." Mission Statement: The Space Environments Testing Management Office (SETMO) will identify, prioritize, and manage a select suite of Agency key capabilities/assets that are deemed to be essential to the future needs of NASA or the nation, including some capabilities that lack an adequate business base over the budget horizon. NESC mission is to perform value-added independent testing, analysis, and assessments of NASA's high-risk projects to ensure safety and mission success. NASA Space Environments and Avionics Fellows as well as Radiation and EEE Parts Community of Practice (CoP) leads.

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

The performance of electronic devices in a space radiation environment is often limited by susceptibility to single-event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Interpreting the results of SEE, TID, and DD testing of complex devices is quite difficult given the rapidly changing nature of both technology and the related radiation issues. Radiation testing is performed to establish the sensitivities of candidate spacecraft electronics to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transients (SETs), TID, and DD effects. Knowing where to search for these test results is a valuable resource for the aerospace engineer or spacecraft design engineer. This poster is intended to be a resource tool for finding radiation test data.

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.

Wide band gap semiconductors, such as silicon carbide (SiC), have emerged as very promising materials for future electronic components due to the tremendous advantages they offer in terms of power capability, extreme temperature tolerance, and high frequency operation. This report documents some issues pertaining to SiC technology and its application in the area of power electronics, in particular those geared for space missions. It also serves as a body of knowledge (BOK) in reference to the development and status of this technology obtained via literature and industry survey as well as providing a listing of the major manufacturers and their capabilities. Finally, issues relevant to the reliability of SiC-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified.

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

We present the results of single event effect (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results.

We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics.This paper is a summary of test results.

Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. This presentation will provide an overview of some of the key proposed updates to the document.

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

The dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.

Heavy-ion induced degradation and catastrophic failure data for SiC power MOSFETs and Schottky diodes are examined to provide insight into the challenge of single-event effect hardening of SiC power devices.

Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.

NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment are often limited by their susceptibility to single event effects (SEE). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is and adequate understanding of the test condition is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), and single-event transient (SET). For total ionizing dose (TID) and displacement damage dose (DDD) results, see a companion paper submitted to the 2015 Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC) Radiation Effects Data Workshop (REDW) entitled "compendium of Current Total Ionizing Dose and Displacement Damage for Candidate Spacecraft Electronics for NASA by M. Campola, et al.

Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.

The dependence of single-event failures in Schottky diodes on reverse voltage derating is discussed. Failure location and possible mechanisms are also discussed.

The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.