20 results on '"Lasers, Q-switched"'
Search Results
2. Passive Q-switching laser properties of Yb:Re3Ga5O12 (Re [formula omitted] Y, Lu, Gd) garnets with GaAs semiconductor saturable absorber.
- Author
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Han, Wenjuan, Ma, Yanjun, Dou, Xiaodan, Wang, Lisha, Xu, Honghao, and Liu, Junhai
- Subjects
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SWITCHING circuits , *GARNET , *CRYSTALS , *GALLIUM arsenide , *LASERS - Abstract
We report, for the first time to our knowledge, on the GaAs saturable absorber passive Q-switching laser properties of Yb:Y 3 Ga 5 O 12 , Yb:Lu 3 Ga 5 O 12 , and Yb:Gd 3 Ga 5 O 12 gallium garnet crystals. 1.10–1.53 W of average output power at 1025–1026 nm could be generated at pulse repetition rates ranging from 19.6 to 43.5 kHz. The shortest pulse duration achieved with the three garnets proved to be very close, falling in a range of 3.3–3.5 ns. The largest pulse energy and highest peak power, obtained with Yb:Y 3 Ga 5 O 12 ; Yb:Lu 3 Ga 5 O 12 ; and Yb:Gd 3 Ga 5 O 12 , were respectively, 52.0; 82.4; and 55.0 μ J, and 12.4, 17.0, and 12.7 kW. [ABSTRACT FROM AUTHOR]
- Published
- 2018
- Full Text
- View/download PDF
3. Tm:KY1-x-yGdxLuy(WO4)2 planar waveguide laser passively Q-switched by single-walled carbon nanotubes
- Author
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Universitat Rovira i Virgili, Kifle E; Mateos X; Loiko P; Choi SY; Bae JEUN; Rotermund F; Aguiló M; Díaz F; Griebner U; Petrov V, Universitat Rovira i Virgili, and Kifle E; Mateos X; Loiko P; Choi SY; Bae JEUN; Rotermund F; Aguiló M; Díaz F; Griebner U; Petrov V
- Abstract
© 2018 Optical Society of America. A Tm 3+ monoclinic double tungstate planar waveguide laser is passively Q-switched (PQS) by a saturable absorber (SA) based on single-walled carbon nanotubes (SWCNTs) randomly oriented in a polymer film. The laser is based on a 18 µm-thick 5 at.% Tm:KY 1-x-y Gd x Lu y (WO 4 ) 2 active layer grown on an undoped (010)-oriented KY(WO 4 ) 2 substrate by liquid phase epitaxy with determined propagation losses 0.7 ± 0.2 dB/cm. The PQS laser generated a maximum average output power of 45.6 mW at 1.8354 µm with a slope efficiency of 22.5%. Stable 83-ns-long laser pulses with an energy of 33 nJ were achieved at a repetition rate of 1.39 MHz. The use of SWCNTs as SA is promising for generation of sub-100 ns pulses in such waveguide lasers at ~2 µm.
- Published
- 2018
4. Tm:KY1-x-yGdxLuy(WO4)2 planar waveguide laser passively Q-switched by single-walled carbon nanotubes.
- Author
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Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, Mateos, X. ; Kifle, E; Loiko, P; Choi, S. ; Bae, J. E. ; Rotermund, F. ; Aguiló, M. ; Díaz, F. ; Griebner, U.; Petrov, V., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, and Mateos, X. ; Kifle, E; Loiko, P; Choi, S. ; Bae, J. E. ; Rotermund, F. ; Aguiló, M. ; Díaz, F. ; Griebner, U.; Petrov, V.
- Abstract
Open Access, A Tm3+ monoclinic double tungstate planar waveguide laser is passively Qswitched (PQS) by a saturable absorber (SA) based on single-walled carbon nanotubes (SWCNTs) randomly oriented in a polymer film. The laser is based on a 18 ¿m-thick 5 at.% Tm:KY1-x-yGdxLuy(WO4)2 active layer grown on an undoped (010)-oriented KY(WO4)2 substrate by liquid phase epitaxy with determined propagation losses 0.7 ± 0.2 dB/cm. The PQS laser generated a maximum average output power of 45.6 mW at 1.8354 ¿m with a slope efficiency of 22.5%. Stable 83-ns-long laser pulses with an energy of 33 nJ were achieved at a repetition rate of 1.39 MHz. The use of SWCNTs as SA is promising for generation of sub-100 ns pulses in such waveguide lasers at ~2 ¿m.
- Published
- 2018
5. Tm:KY1-x-yGdxLuy(WO4)2 planar waveguide laser passively Q-switched by single-walled carbon nanotubes
- Author
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Mateos, X., Kifle, E, Loiko, P, Choi, S., Bae, J. E., Rotermund, F., Aguiló, M., Díaz, F., Griebner, U., Petrov, V., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,Làsers ,Chemistry ,1094-4087 ,Lasers, Q-switched ,Guies d'ones ,Química ,Waveguides, planar - Abstract
Open Access A Tm3+ monoclinic double tungstate planar waveguide laser is passively Qswitched (PQS) by a saturable absorber (SA) based on single-walled carbon nanotubes (SWCNTs) randomly oriented in a polymer film. The laser is based on a 18 ¿m-thick 5 at.% Tm:KY1-x-yGdxLuy(WO4)2 active layer grown on an undoped (010)-oriented KY(WO4)2 substrate by liquid phase epitaxy with determined propagation losses 0.7 ± 0.2 dB/cm. The PQS laser generated a maximum average output power of 45.6 mW at 1.8354 ¿m with a slope efficiency of 22.5%. Stable 83-ns-long laser pulses with an energy of 33 nJ were achieved at a repetition rate of 1.39 MHz. The use of SWCNTs as SA is promising for generation of sub-100 ns pulses in such waveguide lasers at ~2 ¿m.
- Published
- 2018
- Full Text
- View/download PDF
6. Graphene Q-switched Er,Yb:GdAl3(BO3)4 laser at 1550 nm
- Author
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Uwe Griebner, Francesc Díaz, V. V. Maltsev, Valentin Petrov, K. N. Gorbachenya, Anatol Yasukevich, N. I. Leonyuk, Pavel Loiko, Xavier Mateos, Viktor Kisel, Magdalena Aguiló, N. V. Kuleshov, Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,0003-6935 ,Materials science ,business.industry ,Graphene ,Physics ,Física ,Saturable absorption ,Òptica ,Infrared and far-infrared lasers ,Laser ,law.invention ,Optics ,law ,Fiber laser ,Feixos de làser ,Optoelectronics ,Lasers, Q-switched ,business ,Laser beams - Abstract
single-layer graphene saturable absorber is employed for passive Q-switching of an Er,Yb:GdAl3(BO3)4 (Er,Yb:GdAB) compact laser, representing the first Er-doped oxoborate laser Q-switched by graphene. This laser ibased on a c-cut 1.8 at.% Er3+, 15 at.% Yb3+:GdAB crystal diode-pumped at 0.976 ¿m. It generates a maximum average output power of 360 mW at 1.55 ¿m with a slope efficiency of 23% (with respect to the incident power). Stable ~1 ¿J / 130 ns pulses are achieved at a repetition rate of 400 kHz. This result represents the shortest pulse duration ever achieved in bulk Er lasers Q-switched by 2D-materials. Graphene is a promising material for generating nanosecond pulses at high repetition rates (MHz-range) in Er-doped oxoborate lasers emitting in the eye-safe range at 1.5-1.7 ¿m.
- Published
- 2017
- Full Text
- View/download PDF
7. Monoclinic Tm3+:MgWO4: a promising crystal for continuous-wave and passively Q-switched lasers at ∼2 μm
- Author
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Mateos, X., Loiko, P., Serres, J. M., Aguiló, M., Xavier Mateos, Zhang, L., Lin, Z., Lin, H., Zhang, G., Yumashev , K., Petrov, V., Griebner, U., Wang, Y., Yung, S., Rotermund, F., Chen, W., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,Làsers ,Chemistry ,0146-9592 ,Lasers, Q-switched ,Química ,Lasers, solid state - Abstract
Monoclinic thulium-doped magnesium monotungstate, Tm3+:MgWO4, is promising for efficient power-scalable continuous-wave (CW) and passively Q-switched lasers at >2 ¿m. Under diode-pumping at 802 nm, a compact CW laser based on Z-cut Tm:MgWO4 generated 3.09 W at 2022-2034 nm with a slope efficiency of 50% which represents the highest output power ever achieved with this type of laser host. Stable passive Q-switching of the Tm:MgWO4 laser is demonstrated for the first time using single-walled carbon nanotubes (SWCNTs), graphene and Cr2+:ZnS saturable absorbers. Using the latter best performance are achieved with 16.1 ¿J / 13.6 ns pulses at 2017.8 nm with to a maximum average output power of 0.87 W and a peak power of 1.18 kW
- Published
- 2017
- Full Text
- View/download PDF
8. Graphene Q-switched Er,Yb:GdAl3(BO3)4 laser at 1550 nm
- Author
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Mateos, X., GORBACHENYA, K., KISEL, V., YASUKEVICH, A., LOIKO, P., MALTSEV, V., LEONYUK, N., Aguiló, M., Díaz, F., GRIEBNER, W., PETROV, V., KULESHOV, N., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,0003-6935 ,Feixos de làser ,Physics ,Lasers, Q-switched ,Física ,Òptica ,Infrared and far-infrared lasers - Abstract
single-layer graphene saturable absorber is employed for passive Q-switching of an Er,Yb:GdAl3(BO3)4 (Er,Yb:GdAB) compact laser, representing the first Er-doped oxoborate laser Q-switched by graphene. This laser ibased on a c-cut 1.8 at.% Er3+, 15 at.% Yb3+:GdAB crystal diode-pumped at 0.976 ¿m. It generates a maximum average output power of 360 mW at 1.55 ¿m with a slope efficiency of 23% (with respect to the incident power). Stable ~1 ¿J / 130 ns pulses are achieved at a repetition rate of 400 kHz. This result represents the shortest pulse duration ever achieved in bulk Er lasers Q-switched by 2D-materials. Graphene is a promising material for generating nanosecond pulses at high repetition rates (MHz-range) in Er-doped oxoborate lasers emitting in the eye-safe range at 1.5-1.7 ¿m.
- Published
- 2017
- Full Text
- View/download PDF
9. Monoclinic Tm3+:MgWO4: a promising crystal for continuous-wave and passively Q-switched lasers at ∼2 μm
- Author
-
Valentin Petrov, Francesc Díaz, Lizhen Zhang, Konstantin Yumashev, Ge Zhang, Yicheng Wang, Magdalena Aguiló, Josep Maria Serres, Haifeng Lin, Zhoubin Lin, Fabian Rotermund, Uwe Griebner, S. Y. Choi, Pavel Loiko, Weidong Chen, Xavier Mateos, Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Materials science ,02 engineering and technology ,01 natural sciences ,law.invention ,010309 optics ,Crystal ,Optics ,law ,Fiber laser ,0103 physical sciences ,Lasers, Q-switched ,Lasers, solid state ,Diode ,Laser materials ,Làsers ,business.industry ,Graphene ,Slope efficiency ,Química ,021001 nanoscience & nanotechnology ,Laser ,Atomic and Molecular Physics, and Optics ,Chemistry ,0146-9592 ,Continuous wave ,0210 nano-technology ,business ,Monoclinic crystal system - Abstract
Monoclinic thulium-doped magnesium monotungstate, Tm3+:MgWO4, is promising for efficient power-scalable continuous-wave (CW) and passively Q-switched lasers at >2 μm. Under diode pumping at 802 nm, a compact CW laser based on Z-cut Tm:MgWO4 generated 3.09 W at 2022–2034 nm with a slope efficiency of 50% which represents the highest output power ever achieved with this type of laser host. Stable passive Q-switching of the Tm:MgWO4 laser is demonstrated for the first time, to the best of our knowledge, using single-walled carbon nanotubes, graphene, and Cr2+:ZnS saturable absorbers. Using the latter, the best performance is achieved with 16.1 μJ/13.6 ns pulses at 2017.8 nm with a maximum average output power of 0.87 W and a peak power of 1.18 kW.
- Published
- 2017
- Full Text
- View/download PDF
10. Monoclinic Tm3+:MgWO4: A promising crystal for continuous-wave and passively Q-switched lasers at ?2 ?m
- Author
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Química Física i Inorgànica, Universitat Rovira i Virgili, Loiko P., Serres J., Mateos X., Aguiló M., Díaz F., Zhang L., Lin Z., Lin H., Zhang G., Yumashev K., Petrov V., Griebner U., Wang Y., Choi S., Rotermund F., Chen W., Química Física i Inorgànica, Universitat Rovira i Virgili, and Loiko P., Serres J., Mateos X., Aguiló M., Díaz F., Zhang L., Lin Z., Lin H., Zhang G., Yumashev K., Petrov V., Griebner U., Wang Y., Choi S., Rotermund F., Chen W.
- Abstract
© 2017 Optical Society of America. Monoclinic thulium-doped magnesium monotungstate, Tm 3+ :MgWO 4 , is promising for efficient power-scalable continuous-wave (CW) and passively Q-switched lasers at > 2 ?m. Under diode pumping at 802 nm, a compact CW laser based on Z-cut Tm:MgWO 4 generated 3.09 W at 2022-2034 nm with a slope efficiency of 50% which represents the highest output power ever achieved with this type of laser host. Stable passive Q-switching of the Tm:MgWO 4 laser is demonstrated for the first time, to the best of our knowledge, using single-walled carbon nanotubes, graphene, and Cr 2+ :ZnS saturable absorbers. Using the latter, the best performance is achieved with 16.1 ?J/13.6 ns pulses at 2017.8 nm with a maximum average output power of 0.87 W and a peak power of 1.18 kW.
- Published
- 2017
11. Graphene Q-switched Er,Yb:GdAl3(BO3)4 laser at 1550 nm
- Author
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Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, Mateos, X. ; GORBACHENYA, K. ; KISEL, V. ; YASUKEVICH, A. ; LOIKO, P. ; MALTSEV, V. ; LEONYUK, N.; Aguiló, M. ; Díaz, F. ; GRIEBNER, W. ; PETROV, V. ; KULESHOV, N., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, and Mateos, X. ; GORBACHENYA, K. ; KISEL, V. ; YASUKEVICH, A. ; LOIKO, P. ; MALTSEV, V. ; LEONYUK, N.; Aguiló, M. ; Díaz, F. ; GRIEBNER, W. ; PETROV, V. ; KULESHOV, N.
- Abstract
single-layer graphene saturable absorber is employed for passive Q-switching of an Er,Yb:GdAl3(BO3)4 (Er,Yb:GdAB) compact laser, representing the first Er-doped oxoborate laser Q-switched by graphene. This laser ibased on a c-cut 1.8 at.% Er3+, 15 at.% Yb3+:GdAB crystal diode-pumped at 0.976 ¿m. It generates a maximum average output power of 360 mW at 1.55 ¿m with a slope efficiency of 23% (with respect to the incident power). Stable ~1 ¿J / 130 ns pulses are achieved at a repetition rate of 400 kHz. This result represents the shortest pulse duration ever achieved in bulk Er lasers Q-switched by 2D-materials. Graphene is a promising material for generating nanosecond pulses at high repetition rates (MHz-range) in Er-doped oxoborate lasers emitting in the eye-safe range at 1.5-1.7 ¿m.
- Published
- 2017
12. Passive Q-switching of Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber
- Author
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Mateos, X., SERRES, J. M, LOIKO, P., JAMBUNATHAN, V., YASUKEVICH, A. S., YUMASHEV, K. V., PETROV, V., GRIEBNER, U., Aguiló, M., Díaz, F., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,Làsers ,Chemistry ,1559-128X ,Lasers, Q-switched ,Química ,Infrared and far-infrared lasers - Abstract
A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns / 9 ¿J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns / 10.4 ¿J / 8.2 kHz pulses were generated at 2061.1 nm corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented predicting the pulse energy and duration. The simulations are in good agreement with the experimental results
- Published
- 2016
- Full Text
- View/download PDF
13. Passive Q-switching of Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber
- Author
-
Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, Mateos, X. ; SERRES, J. M; LOIKO, P. ; JAMBUNATHAN, V. ; YASUKEVICH, A. S. ; YUMASHEV, K. V. ; PETROV, V. ; GRIEBNER, U. ; Aguiló, M. ; Díaz, F., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, Universitat Rovira i Virgili, and Mateos, X. ; SERRES, J. M; LOIKO, P. ; JAMBUNATHAN, V. ; YASUKEVICH, A. S. ; YUMASHEV, K. V. ; PETROV, V. ; GRIEBNER, U. ; Aguiló, M. ; Díaz, F.
- Abstract
A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns / 9 ¿J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns / 10.4 ¿J / 8.2 kHz pulses were generated at 2061.1 nm corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented predicting the pulse energy and duration. The simulations are in good agreement with the experimental results
- Published
- 2016
14. Passive Q-switching of a Tm,Ho:KLu(WO4)(2) microchip laser by a Cr:ZnS saturable absorber
- Author
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Universitat Rovira i Virgili, Serres, J. M.; Loiko, P.; Mateos, X.; Jambunathan, V.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F., Universitat Rovira i Virgili, and Serres, J. M.; Loiko, P.; Mateos, X.; Jambunathan, V.; Yasukevich, A. S.; Yumashev, K. V.; Petrov, V.; Griebner, U.; Aguilo, M.; Diaz, F.
- Abstract
A diode-pumped Tm,Ho:KLu (WO4)(2) microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns/9 mu J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns/10.4 mu J/8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results. (C) 2016 Optical Society of America
- Published
- 2016
15. Tunable Q-switched fiber laser based on saturable edge-state absorption in few-layer molybdenum disulfide (MoS₂)
- Author
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Woodward, RI, Kelleher, EJR, Howe, RCT, Hu, G, Torrisi, F, Hasan, T, Popov, SV, Taylor, JR, Howe, Richard [0000-0001-5086-0699], Hu, Guohua [0000-0001-9296-1236], Torrisi, Felice [0000-0002-6144-2916], Hasan, Tawfique [0000-0002-6250-7582], and Apollo - University of Cambridge Repository
- Subjects
Lasers, fiber ,Lasers, Q-switched ,Nonlinear optical materials ,Nanomaterials - Abstract
We fabricate a few-layer molybdenum disulfide (MoS₂) polymer composite saturable absorber by liquid-phase exfoliation, and use this to passively Q-switch an ytterbium-doped fiber laser, tunable from 1030 to 1070 nm. Self-starting Q-switching generates 2.88 μs pulses at 74 kHz repetition rate, with over 100 nJ pulse energy. We propose a mechanism, based on edge states within the bandgap, responsible for the wideband nonlinear optical absorption exhibited by our few-layer MoS₂ sample, despite operating at photon energies lower than the material bandgap.
- Published
- 2014
16. Tm:KLu(WO4)2 microchip laser Q-switched by a graphene-based saturable absorber
- Author
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Serres, J. M., Loiko, P., Mateos, X., Yumashev, K., Griebner, K. U., Petrov, V., Aguilo, M., Diaz, F., Serres, J. M., Loiko, P., Mateos, X., Yumashev, K., Griebner, K. U., Petrov, V., Aguilo, M., and Diaz, F.
- Abstract
We report on the first Tm-doped double tungstate microchip laser Q-switched with graphene using a Tm:KLu(WO4)2 crystal cut along the Ng dielectric axis. This laser generates a maximum average output power of 310 mW with a slope efficiency of 13%. At a repetition rate of 190 kHz the shortest pulses with 285 ns duration and 1.6 μJ energy are achieved
17. Passive Q-switching of a Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber
- Author
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Serres, Y. M., Loiko, P. A., Mateos, X., Jambunathan, V., Yasukevich, A. S., Yumashev, K. V., Petrov, V., Griebner, U., Aguilo, M., Diaz, F., Serres, Y. M., Loiko, P. A., Mateos, X., Jambunathan, V., Yasukevich, A. S., Yumashev, K. V., Petrov, V., Griebner, U., Aguilo, M., and Diaz, F.
- Abstract
A diode-pumped Tm;Ho:KLu WO42 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns∕9 μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns∕10.4 μJ∕8.2 kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results
18. Highly efficient continuous-wave diode-pumped Er, Yb:GdAl3(BO3)4 laser
- Author
-
Kisel, V. E., Gorbachenya, K. N., Yasukevich, A. S., Maltsev, V. V., Leonyuk, N. I., Kuleshov, N. V., Kisel, V. E., Gorbachenya, K. N., Yasukevich, A. S., Maltsev, V. V., Leonyuk, N. I., and Kuleshov, N. V.
- Abstract
We report the highly efficient continuous-wave diode-pumped laser operation of Er, Yb:GdAl3 BO3 4 crystal. Absorption and stimulated emission spectra, emission lifetimes, and efficiencies of energy transfer from Yb3 to Er3 ions were determined. A maximal output power of 780 mWwas obtained at 1531 nm at absorbed pump power of 4 W with slope efficiency of 26%
19. Tm:KY1-x-yGdxLuy(WO4)2 planar waveguide laser passively Q-switched by single-walled carbon nanotubes
- Author
-
Mateos, X., Kifle, E, Loiko, P, Choi, S., Bae, J. E., Rotermund, F., Aguiló, M., Díaz, F., Griebner, U., Petrov, V., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,Làsers ,Chemistry ,1094-4087 ,Lasers, Q-switched ,Guies d'ones ,Química ,Waveguides, planar - Abstract
Open Access A Tm3+ monoclinic double tungstate planar waveguide laser is passively Qswitched (PQS) by a saturable absorber (SA) based on single-walled carbon nanotubes (SWCNTs) randomly oriented in a polymer film. The laser is based on a 18 ¿m-thick 5 at.% Tm:KY1-x-yGdxLuy(WO4)2 active layer grown on an undoped (010)-oriented KY(WO4)2 substrate by liquid phase epitaxy with determined propagation losses 0.7 ± 0.2 dB/cm. The PQS laser generated a maximum average output power of 45.6 mW at 1.8354 ¿m with a slope efficiency of 22.5%. Stable 83-ns-long laser pulses with an energy of 33 nJ were achieved at a repetition rate of 1.39 MHz. The use of SWCNTs as SA is promising for generation of sub-100 ns pulses in such waveguide lasers at ~2 ¿m.
- Full Text
- View/download PDF
20. Passive Q-switching of Tm,Ho:KLu(WO4)2 microchip laser by a Cr:ZnS saturable absorber
- Author
-
Mateos, X., SERRES, J. M, LOIKO, P., JAMBUNATHAN, V., YASUKEVICH, A. S., YUMASHEV, K. V., PETROV, V., GRIEBNER, U., Aguiló, M., Díaz, F., Física i Cristal.lografia de Materials, Física i Cristal·lografia de Nanomaterials, Química Física i Inorgànica, and Universitat Rovira i Virgili
- Subjects
Laser materials ,Làsers ,Chemistry ,1559-128X ,Lasers, Q-switched ,Química ,Infrared and far-infrared lasers - Abstract
A diode-pumped Tm,Ho:KLu(WO4)2 microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14 ns / 9 ¿J at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9 ns / 10.4 ¿J / 8.2 kHz pulses were generated at 2061.1 nm corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented predicting the pulse energy and duration. The simulations are in good agreement with the experimental results
- Full Text
- View/download PDF
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