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This study demonstrates enhancement of in-device electro-optic activity via a series of theory-inspired organic electro-optic (OEO) chromophores based on strong (diarylamino)phenyl electron donating moieties. These chromophores are tuned to minimize trade-offs between molecular hyperpolarizability and optical loss. Hyper-Rayleigh scattering (HRS) measurements demonstrate that these chromophores, herein described as BAH, show >2-fold improvement in β versus standard chromophores such as JRD1, and approach that of the recent BTP and BAY chromophore families. Electric field poled bulk devices of neat and binary BAH chromophores exhibited significantly enhanced EO coefficients (r33) and poling efficiencies (r33/Ep) compared with state-of-the-art chromophores such as JRD1. The neat BAH13 devices with charge blocking layers produced very large poling efficiencies of 11.6 ± 0.7 nm2 V−2 and maximum r33 value of 1100 ± 100 pm V−1 at 1310 nm on hafnium dioxide (HfO2). These results were comparable to that of our recently reported BAY1 but with much lower loss (extinction coefficient, k), and greatly exceeding that of other previously reported OEO compounds. 3 : 1 BAH-FD : BAH13 blends showed a poling efficiency of 6.7 ± 0.3 nm2 V−2 and an even greater reduction in k. 1 : 1 BAH-BB : BAH13 showed a higher poling efficiency of 8.4 ± 0.3 nm2 V−2, which is approximately a 2.5-fold enhancement in poling efficiency vs. JRD1. Neat BAH13 was evaluated in plasmonic–organic hybrid (POH) Mach–Zehnder modulators with a phase shifter length of 10 μm and slot widths of 80 and 105 nm. In-device BAH13 achieved a maximum r33 of 208 pm V−1 at 1550 nm, which is ∼1.7 times higher than JRD1 under equivalent conditions. ISSN:2051-6347 ISSN:2051-6355

As bit rates of optical interconnects increase, a large amount of complicated signal conditioning is needed to compensate for the insufficient bandwidth of current modulators. In this paper, we evaluate the reduced equalization requirements of high-bandwidth plasmonic modulators in short-reach transmission experiments. It is shown that transmission of 100 Gbit/s non-return-to-zero (NRZ) and 112 Gbit/s pulse-amplitude modulation-4 over 1 km and 2 km distance is possible without any receiver equalization. At higher bit-rates, such as 120 Gbit/s NRZ, data transmission is demonstrated over 500 m with reduced receiver equalization requirements. Transmission up to 200 Gbit/s over 1 km is also shown with more complex receiver equalization. The reduced complexity of the receiver digital signal processing is attributed to a flat frequency response of at least 108 GHz of the plasmonic modulators. All single wavelength transmissions have been performed at 1540 nm in standard single mode fiber.

A new plasmonic Mach-Zehnder modulator is demonstrated at a bit rate of 120 Gb/s NRZ-OOK with low peak-to-peak driving voltages of 178 mVpp below the HD-FEC limit. Such record low driving voltage requirements potentially translate into an electrical drive power consumption of 862 aJ/bit. The low drive voltages have been made possible by a new differential Mach-Zehnder modulator electrode design. The differential electrode design is optimized for the balanced driving circuitry and reduces the effectively required driving voltage by a factor of four (Vπ/4). The potential of the transmitter scheme is further demonstrated by a transmission experiment over 500 m of single mode fiber at the C-band with a BER performance below the KP4 FEC limit.

Organic electro-optic (EO) materials incorporated into silicon-organic hybrid and plasmonic-organic hybrid devices have enabled new records in EO modulation performance. We report a new series of nonlinear optical chromophores engineered by theory-guided design, utilizing bis(4-dialkylaminophenyl)heteroarylamino donor moieties to greatly enhance molecular hyperpolarizabilities. Hyperpolarizabilities predicted using density functional theory were validated by hyper-Rayleigh scattering measurements, showing strong prediction/experiment agreement and >2-fold advancement in static hyperpolarizability over the best prior chromophores. Electric field poled thin films of these chromophores showed significantly enhanced EO coefficients (r33) and poling efficiencies (r33/Ep) at low chromophore concentrations compared with state-of-the-art chromophores such as JRD1. The highest performing blend, containing just 10 wt% of the novel chromophore BTP7, showed a 12-fold enhancement in poling efficiency per unit concentration vs.JRD1. Our results suggest that further improvement in chromophore hyperpolarizability is feasible without unacceptable tradeoffs with optical loss or stability.

To address the challenge of increasing data rates, next-generation optical communication networks will require the co-integration of electronics and photonics. Heterogeneous integration of these technologies has shown promise, but will eventually become bandwidth-limited. Faster monolithic approaches will therefore be needed, but monolithic approaches using complementary metal–oxide–semiconductor (CMOS) electronics and silicon photonics are typically limited by their underlying electronic or photonic technologies. Here, we report a monolithically integrated electro-optical transmitter that can achieve symbol rates beyond 100 GBd. Our approach combines advanced bipolar CMOS with silicon plasmonics, and addresses key challenges in monolithic integration through co-design of the electronic and plasmonic layers, including thermal design, packaging and a nonlinear organic electro-optic material. To illustrate the potential of our technology, we develop two modulator concepts—an ultra-compact plasmonic modulator and a silicon-plasmonic modulator with photonic routing—both directly processed onto the bipolar CMOS electronics. The monolithic integration of electronic and plasmonic technologies can be used to create electro-optic transmitters capable of symbol rates beyond 100 GBd.

The development of organic electro-optic (EO) materials that concurrently possess a high electro-optic coefficient (r33), high index of refraction, and long-term or high-temperature stability of ch...

A transparent Optical-subTHz-Optical link providing record-high single line rates of 240 Gbit/s and 192 Gbit/s on a single optical carrier over distances from 5 to 115 m is demonstrated. Besides a direct mapping of the optical to a 230 GHz subTHz-carrier frequency by means of a uni-traveling carrier (UTC) photodiode, we demonstrate direct conversion of data from the subTHz domain back to the optical domain by a plasmonic modulator. It is shown that the subTHz-to-optical upconversion can even be performed at good quality without any electrical amplifiers. Finally, at the receiver, the local oscillator is employed to directly map the optical signal back to the electrical baseband within a coherent receiver., Journal of Lightwave Technology, 40 (6), ISSN:0733-8724, ISSN:1558-2213

Tailored nanostructures provide at-will control over the properties of light, with applications in imaging and spectroscopy. Active photonics can further open new avenues in remote monitoring, virtual or augmented reality and time-resolved sensing. Nanomaterials with χ(2) nonlinearities achieve highest switching speeds. Current demonstrations typically require a trade-off: they either rely on traditional χ(2) materials, which have low non-linearities, or on application-specific quantum well heterostructures that exhibit a high χ(2) in a narrow band. Here, we show that a thin film of organic electro-optic molecules JRD1 in polymethylmethacrylate combines desired merits for active free-space optics: broadband record-high nonlinearity (10-100 times higher than traditional materials at wavelengths 1100-1600 nm), a custom-tailored nonlinear tensor at the nanoscale, and engineered optical and electronic responses. We demonstrate a tuning of optical resonances by Δλ = 11 nm at DC voltages and a modulation of the transmitted intensity up to 40%, at speeds up to 50 MHz. We realize 2 × 2 single- and 1 × 5 multi-color spatial light modulators. We demonstrate their potential for imaging and remote sensing. The compatibility with compact laser diodes, the achieved millimeter size and the low power consumption are further key features for laser ranging or reconfigurable optics., Spatial light modulators (SLM) provide tailored light fields for many applications. Here, the authors present an SLM device based on an organic electro-optic material that manipulates the properties of individual pixels by electronic signals at speeds up to 50 MHz.

Hybrid organic electro-optic (OEO) devices consist of a layer of ordered organic chromophores confined between layers of metals or semiconductors, enabling optical fields to be tightly confined within the OEO material. The combination of tight confinement with the high electro-optic (EO) performance of state-of-the art OEO materials enables exceptional electro-optic switching performance in silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) device architectures. Recent records in POH devices include bandwidths < 500 GHz and energy efficiency < 100 aJ/bit. However, optimization of device performance requires both understanding and improving the degree to which chromophores can be acentrically ordered near a metal or semiconductor interface. Applying bulk and/or isotropic models of OEO materials to nanophotonic device architectures often lead to overly optimistic translation of materials performance to device performance. Prior work has identified influences of high centrosymmetric order (birefringence), altered relations between acentric and centrosymmetric order (dimensionality), and surface electrostatics on chromophore ordering. We combine these models into a representation that can be used to understand the influences of these phenomena on device performance, how some prior OEO materials exhibited unusually high performance under confinement, how ordering close to surfaces may be improved, and implications for future electro-optic device design.

Electro-optic modulators from non-linear $\chi^{(2)}$ materials are essential for sensing, metrology and telecommunications because they link the optical domain with the microwave domain. At present, most geometries are suited for fiber applications. In contrast, architectures that modulate directly free-space light at gigahertz (GHz) speeds have remained very challenging, despite their dire need for active free-space optics, in diffractive computing or for optoelectronic feedback to free-space emitters. They are typically bulky or suffer from much reduced interaction lengths. Here, we employ an ultrathin array of sub-wavelength Mie resonators that support quasi bound states in the continuum (BIC) as a key mechanism to demonstrate electro-optic modulation of free-space light with high efficiency at GHz speeds. Our geometry relies on hybrid silicon-organic nanostructures that feature low loss ($Q = $ 550 at $\lambda_{res} = 1594$ nm) while being integrated with GHz-compatible coplanar waveguides. We maximize the electro-optic effect by using high-performance electro-optic molecules (whose electro-optic tensor we engineer in-device to exploit $r_{33} = 100$ pm/V) and by nanoscale optimization of the optical modes. We demonstrate both DC tuning and high speed modulation up to 5~GHz ($f_{EO,-3 dB} =3$ GHz) and shift the resonant frequency of the quasi-BIC by $\Delta\lambda_{res}=$11 nm, surpassing its linewidth. We contrast the properties of quasi-BIC modulators by studying also guided mode resonances that we tune by $\Delta\lambda_{res}=$20 nm. Our approach showcases the potential for ultrathin GHz-speed free-space electro-optic modulators., Comment: 24 pages, 4 figures