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2. 3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel

5. Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration

6. 3D sequential integration: applications and associated key enabling modules (design & technology)

7. Opportunities and challenges brought by 3D-sequential integration

8. A Review of Low Temperature Process Modules Leading Up to the First (≤500 °C) Planar FDSOI CMOS Devices for 3-D Sequential Integration

10. First Demonstration of Low Temperature (≤500°C) CMOS Devices Featuring Functional RO and SRAM Bitcells toward 3D VLSI Integration

12. Single-mode waveguides for GRAVITY

14. Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets

16. Single-mode waveguides for GRAVITY I. The cryogenic 4-telescope integrated optics beam combiner

17. Integrated optical detection circuit for magneto-optical drives

19. Introducing a highly efficient stressor for pMOS devices by controlling epitaxy and Ge enrichment in advanced planar FDSOI CMOS technology

21. Performance and design considerations for gate-all-around stacked-NanoWires FETs

22. High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

23. A new prognostic clinicopathological classification of pituitary adenomas: a multicentric case–control study of 410 patients with 8 years post-operative follow-up

24. Stacked-Wires FETs for Advanced CMOS Scaling

27. Dense N over CMOS 6T SRAM cells using 3D Sequential Integration

28. Vertically stacked-NanoWires MOSFETs in a replacement metal gate process with inner spacer and SiGe source/drain

29. Ns laser annealing for junction activation preserving inter-tier interconnections stability within a 3D sequential integration

30. Recent advances in low temperature process in view of 3D VLSI integration

32. Mise au point d’un test moléculaire améliorant le diagnostic préopératoire des nodules thyroïdens

33. High performance CMOS FDSOI devices activated at low temperature

35. W and Copper Interconnection Stability for 3D VLSI CoolCube Integration

36. (Invited) Annealing Techniques for Low Temperature Junctions Design in a 3D VLSI Integration

39. Intérêt du signal T2 des adénomes hypophysaires à GH traités par analogues de la somatostatine – premiers résultats de l’étude IRMA#2

41. A new prognostic clinicopathological classification of pituitary adenomas: a multicentric case-control study of 410 patients with 8 years post-operative follow-up.

42. Prognostic factors in prolactin pituitary tumors: clinical, histological, and molecular data from a series of 94 patients with a long postoperative follow-up

44. Corrélations significatives de l’aspect en IRM Haute Résolution des adénomes hypophysaires à GH avant traitement

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