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111 results on '"Lantratov, V. M."'

24. High efficient radiation stable AlGaAs/GaAs solar cells with internal Bragg reflector

Author

Andreev, V. M, Kalinovsky, V. S, Komin, V. V, Kochnev, I. V, Lantratov, V. M, and Shvarts, M. Z

Subjects
Energy Production And Conversion
Abstract

An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.

Published
1995

27. High differential efficiency tilted wave laser

Author

Ledentsov, N. N., additional, Shchukin, V. A., additional, Gordeev, N. Yu., additional, Shernyakov, Yu. M., additional, Payusov, A. S., additional, Maximov, M. V., additional, Kaluzhniy, N. A., additional, Mintairov, S. A., additional, Lantratov, V. M., additional, Vashanova, K. A., additional, Kulagina, M. M., additional, and Rouvimov, S., additional

Published
2014
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29. Formation of defect-free InGaAs-GaAs quantum dots for 1.3 ?m spectral range grown by metal-organic chemical vapor deposition

Author

Krestnikov, I. L., Ledentsov, N. N., Mikhail Maximov, Bimberg, D., Bedarev, D. A., Kochnev, I. V., Lantratov, V. M., Cherkashin, N. A., Musikhin, Yu G., Alferov, Zh I., Matériaux et dispositifs pour l'Electronique et le Magnétisme (CEMES-MEM), Centre d'élaboration de matériaux et d'études structurales (CEMES), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA), A.F. Ioffe Physical-Technical Institute, Russian Academy of Sciences [Moscow] (RAS), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), and Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2000

30. Nordic Centre of Excellence in Photovoltaics (NCOE in PV)

Author

Holt, A., Edoff, Marika, Lund, P., Lauritzen, H., Reenaas, T. W., Mellikov, E., Lantratov, V. M., Holt, A., Edoff, Marika, Lund, P., Lauritzen, H., Reenaas, T. W., Mellikov, E., and Lantratov, V. M.

Abstract

A NCoE in PV has been formed by seven research institutions in the Nordic region. The centre is funded by Nordic Energy Research, Renewable Energy Corporation ASA, Elkem Solar AS, Solibro Research AB, Topsil A/S, Energinet.dk, and Luvata as well as the participating research organisations. The main objective is to strengthen the already formed Nordic R&D network and to serve the fast-growing and demanding Nordic PV industry. This will be achieved by educating PhD students with compulsory mobility of the students, arranging general workshops within solar cell research, organizing in-depth workshops on selected topics, giving hands-on workshops on processing of solar cells, and actively disseminate results both in public and scientific media channels.

Published
2008

39. Influence of Annealing on the Formation of InGaAs Quantum Dots in GaAs Matrix During Metal Organic Chemical Vapor Deposition

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Cherkashin, N. A., Bert, N. A., Ledentsov, N. N., Kochnev, I. V., Lantratov, V. M., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Cherkashin, N. A., Bert, N. A., Ledentsov, N. N., Kochnev, I. V., and Lantratov, V. M.

Abstract

Structure investigations of InGaAs quantum dots (QD) grown by metal organic chemical vapor deposition (MOCVD) on GaAs substrate at various growth conditions were carried out by transmission electron microscopy. Incomplete covering of InGaAs QD layer by a thin GaAs spacer grown at 480 degrees C followed by annealing at 600 degrees C is shown to result in removal of developed defect structure observed in unannealed samples. The growth of three InGaAs QD layers separated by GaAs spacers using the same treatment algorithm for each InGaAs QD layer led to perfect QD system formation., Pres: 8th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia, 19-23 Jun 2000, p117-120. This article is from ADA407315 Nanostructures: Physics and Technology International Symposium (8th) Held in St. Petersburg, Russia on June 19-23, 2000 Proceedings

Published
2000

40. Annealing and Morphology Transformation Effects in MOCVD Grown of Self-Organized InAlAs-AlGaAs Quantum Dots

Author

RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Mintairov, A. M., Kochnev, I., Lantratov, V. M., Merz, J. L., Musikhin, Y., RUSSIAN ACADEMY OF SCIENCES SAINT PETERSBURG IOFFE PHYSICAL-TECHNICAL INST, Mintairov, A. M., Kochnev, I., Lantratov, V. M., Merz, J. L., and Musikhin, Y.

Abstract

We report on MOCVD growth of the (In,Al)As-se1f-organized quantum dots (QD) on (Al,Ga)As. We demonstrate that dense arrays (about 2 x 10exp10/cm2) of small ( about 5 nm) QD are formed during annealing (75O C, 20 min, excess of arsine) of In(0.5)Al(0.5)As deposited at 500 C on a Al(0.6)Ga(0.4)As surface as demonstrated by atomic force and transmission electron microscopies and by photoluminescense. We determined that the opening process continues at room temperature and gives rise to large clusters of submicron size after time of one. In contrast, an identical sample that is not annealed shows low density (2 x 10exp9/cm2) of the QDs. Aging in this case gives results in a gradual smoothing of the morphology., Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia; 14-18 Jun 1999. p525-528. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings

Published
1999

44. Local triboelectrification of an n-GaAs surface using the tip of an atomic-force microscope.

Author

Brunkov, P. N., Goncharov, V. V., Rudinsky, M. E., Gutkin, A. A., Gordeev, N. Yu., Lantratov, V. M., Kalyuzhnyy, N. A., Mintairov, S. A., Sokolov, R. V., and Konnikov, S. G.

Subjects
ELECTRIFICATION, GALLIUM compounds, ATOMIC force microscopes, EPITAXIAL layers, DELAYED fluorescence, DEFORMATIONS (Mechanics)
Abstract

The method of scanning Kelvin-probe microscopy is used to show that the effect of triboelectrification is observed when the tip of an atomic-force microscope interacts with the surface of n-GaAs epitaxial layers. The sign of the change in the potential indicates that the sample surface after triboelectrification becomes more negative. The observed specific features of the phenomena can be attributed to the thermally activated generation of point defects in the vicinity of the sample surface due to deformation caused by the tip. [ABSTRACT FROM AUTHOR]

Published
2013
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46. High differential efficiency tilted wave laser

Author

Zediker, Mark S., Ledentsov, N. N., Shchukin, V. A., Gordeev, N. Yu., Shernyakov, Yu. M., Payusov, A. S., Maximov, M. V., Kaluzhniy, N. A., Mintairov, S. A., Lantratov, V. M., Vashanova, K. A., Kulagina, M. M., and Rouvimov, S.

Published
2014
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47. Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures.

Author

Andreev, I. A., Kunitsyna, E. V., Lantratov, V. M., L’vova, T. V., Mikhaılova, M. P., and Yakovlev, Yu. P.

Subjects
PHOTODIODES, HETEROSTRUCTURES, GALLIUM, OPTOELECTRONICS
Abstract

Gallium antimonide and its solid solutions are widely used to create optoelectronic devices for the spectral range 2-5 µm. However, the high chemical activity of their surfaces leads to a high growth rate of the native oxide and to degradation of the characteristics of devices based on these materials. The passivation of GaSb and the quaternary compounds GalnAsSb and GaAlAsSb based on it in aqueous solutions of Na[sub 2]S and (NH[sub 4])[sub 2]S is investigated. It was found that an etching phase is present when such semiconductor materials are treated in aqueous sulfide solutions. The effect of the treatment process (the type and molarity of the solution and the treatment time) on the etch rate of the test materials was investigated. The optimum technological conditions for passivating GaSb/GalnAsSb/GaAlAsSb mesa photodiode structures are determined on the basis of the results obtained, and a significant decrease (5-10 fold) in the value of the reverse dark current is obtained. [ABSTRACT FROM AUTHOR]

Published
1997
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