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A study was conducted, using Lorentz microscopy, to investigate the Ga implantation at various doses in an uncapped permalloy thin film, and to examine the effects of this on the magnetization reversal process. The result shows that implantation with a dose of 10(super 15) Ga(super +) cm(super -2) and higher increases the coercivity of the implanted region.

Presents survey results on the methods of laryngoscope cleaning in Great Britain. Evidence of great variety in cleaning practice; Dominance of autoclaving larygoscope blade; Absence of guidelines relating to equipment treatment between uses.

Examines the treatment on patient with thermal injury in Great Britain. Assessment on the algorithm for managing injury from smoke inhalation; Efficacy of the techniques in treating airway problems and poisoning; Methodology of the treatment.

Presents correspondence related to medicine. Causes of sleep disorders in children; Genetic aspects of hemochromatosis; Management of severe burns.

A focused-ion beam has been used to pattern magnetic antidot arrays containing different sized antidots and spacings in Ni[sub 80]Fe[sub 20] films. Their magnetic domain structure has been studied using Lorentz transmission electron microscopy, which has shown that the edges of the antidots pin the domain walls during magnetization reversal. The remanent domain structure was found to depend strongly on the antidot size and spacing, from domains pinned between the corners of adjacent rows of antidots for large sizes to domains pinned between the edges of adjacent antidots for small sizes. The relevance of such structures for high density recording is discussed. © 2000 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Abstract: The effects of Ga+ ion implantation in SiO2/Ta(5nm)/NiFe(3.5nm)/CoFe(1.5nm)/Cu(2.9nm) /CoFe(2.5nm)/IrMn(10nm)/Ta(5nm) spin valve stacks were investigated. As-deposited films show a giant magnetoresistance (GMR) of 7.3% and an exchange bias field () of 42mT. After implantation with 30keV Ga+ ions at doses ranging from 1012 to 1016 ions/cm2, we observe a dramatic decrease in GMR and exchange bias field together with an increase in film resistance. The effects of Ga+ ion implantation during FIB milling of small GMR elements was investigated by reducing 10μm spin valve lines to line widths ranging from 7 to 0.5μm. The GMR and exchange bias field were found to rapidly decrease with decrease in spin valve width. Magnetic field annealing after Ga+ ion implantation does not restore the spin valve properties. [Copyright &y& Elsevier]