Search

Semiconducting two-dimensional materials have gained significant attention in the field of electronics due to their exotic physical properties. In this study, multilayer WS2 films were achieved by employing a layer-by-layer wet transfer method from monolayer WS2 films synthesized through chemical vapor deposition. Analysis of photoluminescence and Raman spectra indicated a weak interaction between layers in the multilayer WS2 films. The electron mobility of WS2—based field effect transistors was significantly affected by the number of layers, with trilayer films exhibiting the highest mobility. Moreover, the FETs exhibited operational ability in ambient conditions, showing enhanced performance when utilizing HfO2 as the capping layer. Our findings provide a feasible way to achieve multilayer WS2 for high-performance FETs. [ABSTRACT FROM AUTHOR]

Van der Waals (vdW) heterostructures have gained significant attention in photodetectors due to their seamless integration with materials possessing diverse functionalities. In this study, the fabrication of a Te nanomesh/black‐Si vdW heterostructure is presented, and investigated its photoresponse properties. The heterostructure exhibits a pronounced rectification behavior, characterized by a rectification ratio of 2.2 × 104. Notably, the heterostructure device demonstrates commendable photoresponse properties, including a high responsivity of 350 mA W−1, an extensive linear dynamic range of 45.5 dB, a high specific detectivity of 9.6 × 1011 Jones, and a wide spectral response ranging from 400 to 1550 nm. Furthermore, the heterostructure exhibits rapid response, with a rise time and a decay time of 70 and 140 µs, respectively. These exceptional photoresponse properties can be attributed to the robust internal built‐in electrical field at the hetero‐interface and the augmented light absorption in black‐Si. The outstanding photoresponse properties of the heterostructure make it a promising candidate for multiwavelength single‐pixel imaging, enabling the collection of mask patterns under varying wavelengths of light radiation. This work provides a novel approach for fabricating mixed‐dimensional vdW heterostructures, offering promising prospects for advancements in optoelectronics. [ABSTRACT FROM AUTHOR]

Zinc (Zn) has arisen as a significant suppressor of vacancy formation in halide perovskites, establishing its pivotal role in defect engineering for these materials. Herein, the Zn‐catalyzed vapor‐liquid‐solid (VLS) route is reported to render black‐phase CsPbI3 nanowires (NWs) operationally stable at room temperature. Based on first‐principle calculations, the doped Zn2+ can not only lead to the partial crystal lattice distortion but also reduce the formation energy (absolute value) from the black phase to the yellow phase, improving the stability of the desired black‐phase CsPbI3 NWs. A series of contrast tests further confirm the stabilization effect of the Zn‐doped strategy. Besides, the polarization‐sensitive characteristics of black‐phase CsPbI3 NWs are revealed. This work highlights the importance of phase stabilization engineering for CsPbI3 NWs and their potential applications in anisotropic optoelectronics. [ABSTRACT FROM AUTHOR]

Interlayer charge‐transfer (CT) in 2D atomically thin vertical stacks heterostructures offers an unparalleled new approach to regulation of device performance in optoelectronic and photonics applications. Despite the fact that the saturable absorption (SA) in 2D heterostructures involves highly efficient optical modulation in the space and time domain, the lack of explicit SA regulation mechanism at the nanoscale prevents this feature from realizing nanophotonic modulation. Here, the enhancement of SA response via CT in WS2/graphene vertical heterostructure is proposed and the related mechanism is demonstrated through simulations and experiments. Leveraging this mechanism, CT‐induced SA enhancement can be expanded to a wide range of nonlinear optical modulation applications for 2D materials. The results suggest that CT between 2D heterostructures enables efficient nonlinear optical response regulation. [ABSTRACT FROM AUTHOR]

Photodetectors with high responsivity, fast response, and broad spectral response are of great importance for a wide range of applications in fundamental science and various industries. However, conventional photodiodes operating at low bias voltage do not provide any gain. The graphene (Gr)/Si van der Waals heterostructure, on the other hand, offers a potential gain due to the limited density of states near the Dirac point. In this work, a highly photoresponsive broadband pyramidal black‐Si/Gr heterojunction photodetector is presented. The device, with an active area of 5×5 mm2 and a bias voltage of −5 V, exhibits an ultra‐high responsivity of 4.1 A W−1. The photoresponsivity can be further increased to 1379 A W−1 by reducing the device area. Comparative experiments reveal that the pyramidal black‐Si/Gr photodetectors exhibit the largest responsivity compared with pyramidal‐Si/Gr and flat‐Si/Gr photodetectors. The gain in pyramidal black‐Si/Gr photodetectors is attributed to both the pyramidal nanoporous structures and the shift of the Fermi level of Gr under bias. Furthermore, the high responsivity and stable operation of the photodetectors enable the demonstration of imaging applications. The results provide a new strategy for enhancing the performance of photodetectors based on 2D materials. [ABSTRACT FROM AUTHOR]

Two‐dimensional transition metal dichalcogenides (TMDs) are needed in high‐performance piezoresistive sensors due to their strong strain‐induced bandgap modification and thereby large gauge factors. However, integrating a conventional high‐temperature chemical vapor deposition (CVD)‐grown TMD with a flexible substrate necessitates a transfer process that inevitably degrades the sensing properties of the TMDs and increases the overall fabrication complexity. We present a high‐performance piezoresistive strain sensor that employs large‐area PdSe2 films grown directly on polyimide (PI) substrates via plasma‐assisted selenization of a sputtered Pd film. The reliable strain transfer from the substrate to the PdSe2 film ensures an outstanding strain‐sensing capability of the sensor. Specifically, the sensors have a gauge factor of up to −315 ± 2.1, a response time under 25 ms, a detection limit of 8 × 10−6, and an exceptional stability of over 104 loading–unloading cycles. By attaching the sensors to the skin surface, we demonstrate their application for measuring physiological parameters in health care monitoring, including motion, voice, and arterial pulse vibration. Furthermore, using the PdSe2 film sensor combined with deep learning technology, we achieved intelligent recognition of artery temperature from arterial pulse signals with only a 2% difference between predicted and actual temperatures. The excellent sensing performance, together with the advantages of low‐temperature fabrication and simple device structure, make the PdSe2 film sensor promising for wearable electronics and health care sensing systems. [ABSTRACT FROM AUTHOR]

PdSe2, a semiconductor with a narrow band gap, shows tremendous promise for high‐performance broadband photodetectors. In this study, highly sensitive, broadband, and flexible PdSe2 thin film photodetectors on polyimide (PI) substrates that can detect light from the UV (365 nm) to infrared (2200 nm) regions are reported. The devices with thick (21 nm) PdSe2 films show decent performance with a decent responsivity of 37.6 mA W−1 at 1550 nm and a fast response time. For the thick PdSe2 film, the bolometric effect dominates the positive photoresponse across all wavelength regions, whereas for the thin PdSe2 film (4.5–13 nm), which shows both positive and negative photoresponses, it dominates in the infrared region. The negative photoresponse of thin PdSe2 in the UV to the VIS region is attributed to the charge transfer‐related adsorption‐desorption of gas molecules. Detailed investigations revealed that the temperature coefficient of resistance (TCR) value is closely correlated to film thickness, with the thinnest film exhibiting the highest absolute TCR value of up to 4.3% °C−1. The value is much larger than that of metals, most 2D materials, amorphous Si, and even commercial VOx. These findings suggest that PdSe2 films have a promising future in broadband photodetectors. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) materials have gained significant attention owing to their exceptional electronic and optoelectronic properties, including high carrier mobility, strong light–matter interaction, layer-dependent band structure and band gap. The passivated surface of 2D materials enables the fabrication of van der Waals (vdW) heterojunctions by integrating them with various other materials, such as nanowires, nanosheets and bulk materials. Heterojunction photodetectors, specifically those composed of 2D materials and silicon (Si), have attracted considerable interest due to the well-established processing techniques associated with Si and the excellent performance of the related devices. The hybrid dimension vdW heterojunction composed of 2D materials and Si has the advantages of excellent performance, low fabrication cost, and easy integration with silicon-based devices. It has unique advantages in the field of heterojunction photodetectors. This review provides an overview of the recent advancements in photodetectors based on 2D material/Si heterojunctions. First, we present the background and motivation of the review. Next, we discuss the key performance metrics for evaluating photodetector performance. Then, we review the recent progress made in the field of 2D material/Si heterojunction photodetectors. Finally, we summarize the findings and offer future prospects. [ABSTRACT FROM AUTHOR]

Photodetectors with tunable responsivity are highly desirable for intelligent light sensors. The charge carrier transport properties of two-dimensional materials can be easily tuned by electrostatic doping due to their ultrathin thickness, meeting the requirement of deep optical sensing. In this study, we present the tunable temperature coefficient of resistance (TCR) in palladium diselenide (PdSe2) nanosheet-based field effect transistors (FETs) via gate voltage modulation. By applying a gate voltage to a FET with SiO2 (285 nm) dielectric, the TCR can be finely tuned from −1 to −3% K–1. Substituting the thick SiO2 with a thin h-BN dielectric further allows for TCR tuning from −2 to −0.06% K–1. The tunable TCR is attributed to the control of activation energy by the gate voltage. In addition, we demonstrate that a PdSe2 nanosheet-based FET, fabricated on a PI substrate, can act as a bolometric photodetector whose responsivity to infrared illumination (9.3 μm) can be electrically tuned. By modulation of the gate voltage, the responsivity can be adjusted from 21 to 245 mA/W. These findings suggest promising applications of PdSe2 nanosheet-based bolometers in next-generation intelligence infrared optoelectronic devices. [ABSTRACT FROM AUTHOR]

Atomically thin narrow-bandgap layered PdSe2 has attracted much attention due to its rich and unique electrical properties. For silicon-compatible device integration, direct wafer-scale preparation of high-quality PdSe2 thin film on a silicon substrate is highly desired. Here, we present the low-temperature synthesis of large-area polycrystalline PdSe2 films grown on SiO2/Si substrates by plasma-assisted metal selenization and investigate their charge carrier transport behaviors. Raman analysis, depth-dependent x-ray photoelectron spectroscopy, and cross-sectional transmission electron microscopy were used to reveal the selenization process. The results indicate a structural evolution from initial Pd to intermediate PdSe2– x phase and eventually to PdSe2. The field-effect transistors fabricated from these ultrathin PdSe2 films exhibit strong thickness-dependent transport behaviors. For thinner films (4.5 nm), a record high on/off ratio of 104 was obtained. While for thick ones (11 nm), the maximum hole mobility is about 0.93 cm2 V−1 S−1, which is the record high value ever reported for polycrystalline films. These findings suggest that our low-temperature-metal-selenized PdSe2 films have high quality and show great potential for applications in electrical devices. [ABSTRACT FROM AUTHOR]

Van der Waals heterostructure shows promising applications in next generation optoelectronics. As a kind of van der Waals heterostructure, graphene/silicon (Gr/Si) based heterostructure devices have been demonstrated as high performance photodetectors. Here, we studied the origin of the high performance of Gr/Si photodetectors based on photocurrent mapping technology. According to photocurrent mapping, the photocurrent in the Gr/Si and Gr/SiO2/Si area nearing the Si window edge is higher than that in other positions, which is attributed to the highly effective collection efficiency of photocarriers. A device with size of Gr/Si region (r=7.4 μm) and Gr/SiO2/Si region (L=6.1 μm) shows high sensitivity and a broadband photoresponse in the range from 420 to 1000 nm with the peak sensitivity of 52 A/W at 780 nm, and fast response speed with rise time of 16 μs and decay time of 52 μs. Our study provides a strategy for the design of high photoresponsivity Gr/Si based devices.

Controllable self‐catalyzed growth of semiconductor nanowires (NWs) is of great importance, particularly to avoid impurities coming from foreign catalysts to deteriorate the NW properties. Although this catalyst‐free NW growth has many obvious advantages, there are very limited works focused on all‐inorganic CsPbBr3 perovskite NWs, which is one of the recent champion materials for electronics and optoelectronics. Here, a direct self‐catalyzed synthesis of freestanding CsPbBr3 NWs via vapor–liquid–solid growth mechanism by chemical vapor deposition is developed. Notably, mainipulation of the substrate surface roughness is the key enabling parameter for the self‐catalyzed NW growth here. It is revealed that the surface energy of substrates, modulated by its surface roughness, is found to effectively mediate the self‐catalytic growth of CsPbBr3 NWs. When configured into photodetectors, the intrinsic p‐type CsPbBr3 NWs exhibit good optoelectronic performance with a photoresponivity of ≈2000 A W−1, a detectivity of ≈2.57 × 1012 Jones, and a fast response down to 362 µs. All these results evidently indicate the technological potential of this self‐catalyzed synthesizing route for other high‐quality all‐inorganic perovskite NWs. [ABSTRACT FROM AUTHOR]

Bi‐directional photodetection with positive and negative photoconductance (PPC/NPC) plays a critical role in building next‐generation artificial neuromorphic systems, visual information processing and optoelectronic logic gates of the future. However, the typical device configuration based on heterostructures with strict working principles restricts the diversity of material selection. In this work, a novel strategy is proposed to fabricate bi‐directional photoresponse devices based on PtSe2−x films with precisely controllable selenization engineering. It is found that the PtSe2−x films are composed of Pt and PtSe2 components. The direction of the photocurrent can be reversibly modulated in a broadband range by tuning the ratio of PtSe2 in the film, which is ascribed to the synergistic mechanism of bolometric effect of Pt and photoconductive effect of PtSe2. The polarity switching wavelength from NPC to PPC can be further modulated through tuning the components of the film for specific demand. The tunable bi‐directional photoresponse enables the device to mimic the fundamental functions of artificial synapses all optically, such as aversion learning capability and logical functions, with high paired pulse facilitation index. This work potentially opens an opportunity for the development of advanced artificial neuromorphic systems and optoelectronic logic gates. [ABSTRACT FROM AUTHOR]