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Antiferromagnets (AFMs) exhibit spin arrangements with no net magnetization, positioning them as promising candidates for spintronics applications. While electrical manipulation of the single-crystal AFMs, composed of periodic spin configurations, is achieved recently, it remains a daunting challenge to characterize and to manipulate polycrystalline AFMs. Utilizing statistical analysis in data science, we demonstrate that polycrystalline AFMs can be described using a real, symmetric, positive semi-definite, rank-two tensor, which we term the Neel tensor. This tensor introduces a unique spin torque, diverging from the conventional field-like and Slonczewski torques in spintronics devices. Remarkably, Neel tensors can be trained to retain a specific orientation, functioning as a form of working memory. This attribute enables zero-field spin-orbit-torque switching in trilayer devices featuring a heavy-metal/ferromagnet/AFM structure and is also consistent with the X-ray magnetic linear dichroism measurements. Our findings uncover hidden statistical patterns in polycrystalline AFMs and establishes the presence of Neel tensor torque, highlighting its potential to drive future spintronics innovations., Comment: main text 18 pages, supplementary information 10 pages

Spin Hall effect plays an essential role in generating spin current from the injected charge current, following the Dyakonov-Perel rule that the directions of charge flow, spin flow and spin polarization are mutually perpendicular to each other. Recently, its generalization from an antiferromagnet, so-called magnetic spin Hall effect, has been studied and verified by measuring anomalous spin accumulations. Here, we investigate the magnetic spin Hall effect in bilayer materials made of a heavy metal and an antiferromagnet. The spin current generated by the magnetic spin Hall effect accomplishes spin-orbit-torque switching for ferromagnetic magnetization and exchange bias concurrently without any external magnetic field. The switching mechanism crucially relies on the non-collinear spin texture in the antiferromagnet, capable of generating symmetry-breaking components in the spin-current tensor so that the external magnetic field is no longer necessary. The zero-field concurrent switching of magnetization and exchange bias is a significant technological breakthrough. Furthermore, our findings pave the way to explore the magnetic spin Hall effects in various spin textures through spin-orbit-torque switching.

With ultra-fast writing capacity and high reliability, the spin-orbit torque is regarded as a promising alternative to fabricate next-generation magnetic random access memory. However, the three-terminal setup can be challenging when scaling down the cell size. In particular, the thermal stability is an important issue. Here we demonstrate that the current-pulse-induced perpendicular exchange bias can significantly relieve the concern of thermal stability. The switching of the exchange bias direction is induced by the spin-orbit torque when passing current pulses through the Pt/Co system with an inserted IrMn antiferromagnetic layer. Manipulating the current-pulse-induced exchange bias, spin-orbit-torque switching at zero field between states with unidirectional anisotropy is achieved and the thermal agitation of the magnetic moment is strongly suppressed. The spin-orbit torque mechanism provides an innovative method to generate and to control the exchange bias by electrical means, which enables us to realize the new switching mechanism of highly stable perpendicular memory cells.

Assessing and controlling magnetic interactions in magnetic nanostructures are critical to nanomagnetic and spintronic explorations, such as magnetic recording media, permanent magnets, magnetic memory and logic devices, etc. Here we demonstrate an extremely sensitive magnetic yoking effect and tunable interactions in FePt based hard/soft bilayers mediated by the soft layer. Below the exchange length, a thin soft layer strongly exchange couples to the perpendicular moments of the hard layer; above the exchange length, just a few nanometers thicker, the soft layer moments turn in-plane and act to yoke the dipolar fields from the adjacent hard layer perpendicular domains. The evolution from exchange to dipolar-dominated interactions is experimentally captured by first-order reversal curves, the delta-M method, and polarized neutron reflectometry, and confirmed by micromagnetic simulations. These findings demonstrate an effective yoking approach to design and control magnetic interactions in wide varieties of magnetic nanostructures and devices., Comment: 24 pages, 5 figures, plus 3-page supplementary information

The tunnel magnetoresistance (TMR) in the magnetic tunnel junction (MTJ) with embedded nanoparticles (NPs) was calculated in range of the quantum-ballistic model. The simulation was performed for electron tunneling through the insulating layer with embedded magnetic and nonmagnetic NPs within the approach of the double barrier subsystem connected in parallel to the single barrier one. This model can be applied for both MTJs with in-plane magnetization and perpendicular one. We also calculated the in-plane component of the spin transfer torque (STT) versus the applied voltage in MTJs with magnetic NPs and determined that its value can be much larger than in single barrier system (SBS) for the same tunneling thickness. The reported simulation reproduces experimental data of the TMR suppression and peak-like TMR anomalies at low voltages available in literature., Comment: 9 pages, 6 figures

Temperature dependence of the tunnel magnetoresistance (TMR) was calculated in range of the quantum-ballistic model in the magnetic tunnel junctions (MTJs) with embedded nanoparticles (NPs). The electron tunnel transport through NP was simulated in range of double barrier approach, which was integrated into the model of the magnetic point-like contact. The resonant TMR conditions and temperature impact were explored in detail. Moreover, the possible reasons of the temperature induced resonant conditions were discussed in the range of the lead-tunneling cell-lead model near Kondo temperature. We also found that redistribution of the voltage drop becomes crucial in this model. Furthermore, the direct tunneling plays the dominant role and cannot be omitted in the quantum systems with the total tunneling thickness up to 5-6 nm. Hence, Coulomb blockade model cannot explain Kondo-induced TMR anomalies in nanometer-sized tunnel junctions., Comment: 7 pages, 3 figures

In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be easily simulated within our model: we found, that the suppressed TMR magnitudes and the TMR sign-reversing effect at small voltages are related to the electron momentum states of the NP located inside the insulating layer. All these TMR behaviors can be explained within the tunneling model, where NP is simulated as a quantum well (QW). The coherent (direct) double barrier tunneling is dominating over the single barrier one. The origin of the TMR suppression is the quantized angle transparency for spin polarized electrons being in one of the lowest QW states. The phenomenon was classified as the quantized conductance regime due to restricted geometry., Comment: 4 pages, 5 figures

To address thermal stability issues for spintronic devices with a reduced size, we investigate spin-orbit torque in Co/Pt multilayers with strong perpendicular magnetic anisotropy. Note that the spin-orbit torque arises from the global imbalance of the spin currents from the top and bottom interfaces for each Co layer. By inserting Ta or Cu layers to strengthen the top-down asymmetry, the spin-orbit torque efficiency can be greatly modified without compromised perpendicular magnetic anisotropy. Above all, the efficiency builds up as the number of layers increases, realizing robust thermal stability and high spin-orbit-torque efficiency simultaneously in the multilayers structure.

The A1- L10 phase transformation has been investigated in (001) FeCuPt thin films prepared by atomic-scale multilayer sputtering and rapid thermal annealing (RTA). Traditional x-ray diffraction is not always applicable in generating a true order parameter, due to non-ideal crystallinity of the A1 phase. Using the first-order reversal curve (FORC) method, the A1 and L10 phases are deconvoluted into two distinct features in the FORC distribution, whose relative intensities change with the RTA temperature. The L10 ordering takes place via a nucleation-and-growth mode. A magnetization-based phase fraction is extracted, providing a quantitative measure of the L10 phase homogeneity., Comment: 17 pages, 5 figures, 4 page supplementary material (4 figures)

Nanopatterned FePt nano-dots often exhibit low coercivity and a broad switching field distribution, which could arise due to edge damage during the patterning process causing a reduction in the $L1_{0}$ ordering required for a high magnetocrystalline anisotropy. Using an atomistic spin model, we study the magnetization reversal behavior of $L1_{0}$ FePt nanodots with soft magnetic edges. We show that reversal is initiated by nucleation for the whole range of edge widths studied. For narrow soft edges the individual nucleation events dominate reversal; for wider edges, multiple nucleation at the edge creates a circular domain wall at the interface which precedes complete reversal. Our simulations compare well with available analytical theories. The increased edge width further reduces and saturates the required nucleation field. The nucleation field and the activation volume manipulate the thermally induced switching field distribution. By control of the properties of dot edges using proper patterning methods, it should be possible to realize exchange spring bit patterned media without additional soft layers., Comment: 9 pages and 6 figures

We have achieved (001) oriented L10 (Fe1-xCux)55Pt45 thin films, with magnetic anisotropy up to 3.6x10^7 erg/cm^3, using atomic-scale multilayer sputtering and post annealing at 400 {\deg}C for 10 seconds. By fixing the Pt concentration, structure and magnetic properties are systematically tuned by the Cu addition. Increasing Cu content results in an increase in the tetragonal distortion of the L10 phase, significant changes to the film microstructure, and lowering of the saturation magnetization and anisotropy. The relatively convenient synthesis conditions, along with the tunable magnetic properties, make such materials highly desirable for future magnetic recording technologies., Comment: 16 pages, 6 figures, to appear in APL

We demonstrate a simple method to tailor the magnetization reversal mechanisms of Co/Pt multilayers by depositing them onto large area nanoporous anodized alumina (AAO) with various aspect ratios, A = pore depth/diameter. Magnetization reversal of composite (Co/Pt)/AAO films with large A is governed by strong domain-wall pinning which gradually transforms into a rotation-dominated reversal for samples with smaller A, as investigated by a first-order reversal curve method in conjunction with analysis of the angular dependent switching fields. The change of the magnetization reversal mode is attributed to topographical changes induced by the aspect ratio of the AAO templates., Comment: 12 pages, 3 figures

We studied the interlayer coupling in the quadrilayer consisting of IrMn/CoFe (bottom layer)/NiFeOx/ CoFe (top layer). The in-plane perpendicular interlayer coupling is observed between CoFe layers at room temperature. An anisotropy transition from uniaxial to unidirectional in the perpendicular direction is observed around Tt = 55 K. The nano-oxide layer NiFeOx shows no distinguishable ferromagnetic signal in the high-temperature (uniaxial) phase, while a strong signal appeared in the low-temperature (unidirectional) phase. A possible two-component scenario, that the nano-oxide layer may contain both amorphous short-range antiferromagnetic domains and superparamagneitc clusters, is proposed to explain the phase transition., Comment: final version to appear in Applied Physics Letters