139 results on '"Laügt, M."'
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2. Growth and characterization of A-plane ZnO and ZnCoO based heterostructures
3. Growth of non-polar ZnO/(Zn,Mg)O quantum well structures on R-sapphire by plasma-assisted molecular beam epitaxy
4. Growth by molecular beam epitaxy of AlGaN/GaN high electron mobility transistors on Si-on-polySiC
5. Structural and electronic properties of ZnMgO/ZnO quantum wells
6. AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(1 1 1)
7. Characterization by X-ray diffraction and electron microscopy of GaInAs and GaAsN single layers and quantum wells grown on GaAs
8. An X-ray and TEM study of inhomogeneous ordering in Al xGa 1− xN layers grown by MOCVD
9. Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers
10. Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxy
11. Microstructural analysis of III–V nitrides grown on 6H–SiC by metal–organic vapour phase epitaxy (MOVPE)
12. Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1)
13. Interface structure and anisotropic strain relaxation of nonpolar wurtzite [formula] and [formula] orientations: ZnO epilayers grown on sapphire.
14. Faceting and structural anisotropy of nanopatterned CdO(110) layers.
15. Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayer
16. Structural and optical characterization of ZnSe single crystals grown by solid-phase recrystallization.
17. Polar and non-polar ZnO/ZnMgO quantum well heterostructures
18. Magnetic anisotropy of Co2+ as signature of intrinsic ferrromagnetism in ZnO:Co
19. Residual strain in nonpolar a-plane Zn1−xMgxO (<x<0.55) and its effect on the band structure of (Zn,Mg)O/ZnO quantum wells
20. Interface structure and anisotropic strain relaxation of nonpolar wurtzite (112¯) and (101¯) orientations: ZnO epilayers grown on sapphire
21. Non-polara-plane ZnMgO1/ZnO quantum wells grown by molecular beam epitaxy
22. Reduction of stacking faults in (11$ \bar 2 $0) and (11$ \bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission
23. Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction
24. Crack-free highly reflective AlInN∕AlGaN Bragg mirrors for UV applications
25. Magnetic Anisotropy ofCo2+as Signature of Intrinsic Ferromagnetism inZnO∶Co
26. Growth of wurtzite-GaN on silicon (100) substrate by molecular beam epitaxy
27. Some benefits of Fe doped less dislocated GaN templates for AlGaN/GaN HEMTs grown by MOVPE
28. Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrors
29. (Ga,In)(N,As)-based solar cells grown by molecular beam epitaxy
30. From GaAs:N to oversaturated GaAsN: Analysis of the band-gap reduction
31. Realization of waveguiding epitaxial GaN layers on Si by low-pressure metalorganic vapor phase epitaxy
32. An X-ray and TEM study of inhomogeneous ordering in AlxGa1−xN layers grown by MOCVD
33. Ordering in undoped hexagonal AlxGa1xN grown on sapphire (0001) with 0.09 < x < 0.247
34. Ordering in undoped hexagonal AlxGa1xN grownon sapphire (0001) with 0.09 < x < 0.247
35. GaInNAs/GaAs quantum wells grown by molecular-beam epitaxy emitting above 1.5 μm
36. In situgrowth monitoring of distributed GaN–AlGaN Bragg reflectors by metalorganic vapor phase epitaxy
37. Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
38. Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy
39. Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates
40. Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
41. From Relaxed to Highly Tensily Strained GaN Grown on 6H-SiC and Si(111): Optical Characterization
42. High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO
43. Buffer free direct growth of GaN on 6H–SiC by metalorganic vapor phase epitaxy
44. Metal Organic Vapour Phase Epitaxy (MOVPE) Growth of GaN(n)/SiC(p) Heterostructures
45. Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
46. Effects of Built-in Polarization Field on the Optical Properties of AlGaN/GaN Quantum Wells
47. Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
48. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
49. Molecular Beam Epitaxy of GaN under N-rich Conditions using NH3
50. Optimizing scans on asymmetric reflections
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