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In this paper, we investigate the quasi-two-body decays $B_c \to K_0^{*}(1430,1950) D_{(s)} \to K \pi D_{(s)}$ within the perterbative QCD (PQCD) framework. The S-wave two-meson distribution amplitudes (DAs) are introduced to describe the final state interactions of the $K\pi$ pair, which involve the time-like form factors and the Gegenbauer polynomials. In the calculations, we adopt two kinds of parameterization schemes to describe the time-like form factors: One is the relativistic Breit-Wigner (RBW) formula, which is usually more siutable for the narrow resonances, and the other is the LASS line shape proposed by the LASS Collaboration, which includes both the resonant and nonresonant components. We find that the branching ratios and the direct CP violations for the decays $B_c \to K_0^{*}(1430) D_{(s)}$ obtained from those of the quasi-two-body decays $B_c \to K_0^{*}(1430) D_{(s)} \to K \pi D_{(s)}$ under the narrow width approximation (NWA) can be consistent well with the previous PQCD results calculated in the two-body framework by assuming that $K^*_0(1430)$ being the lowest lying $\bar q s$ state, which is so-called scenario II (SII). We conclude that the LASS parameterization is more siutable to describe the $K_0^{*}(1430)$ than the RBW formula, and the nonresonant components play an important role in the branching ratios of the decays $B_c \to K_0^{*}(1430) D_{(s)} \to K \pi D_{(s)}$. In view of the large difference between the decay width measurements for the $K_0^{*}(1950)$ given by BaBar and LASS collaborations, we calculate the branching ratios and the CP violations for the quasi-two-body decays $B_c \to K_0^{*}(1950) D_{(s)} \to K \pi D_{(s)}$ by using two values, $\Gamma_{K^*_0(1950)}=0.100\pm0.04$ GeV and $\Gamma_{K^*_0(1950)}=0.201\pm0.034$ GeV, besides the two kinds of parameterizations for the resonance $K^*_0(1950)$., Comment: 16 pages, 3 figures

Resonance fluorescence (RF) of a two-level emitter displays persistently anti-bunching irrespective of the excitation intensity, but inherits the driving laser's linewidth under weak excitation. These properties are commonly explained disjoinedly as the emitter's single photon saturation or passively scattering light, until a recent theory attributes anti-bunching to the laser-like spectrum's interference with the incoherently scattered light. However, the theory implies higher-order scattering processes, and led to an experiment purporting to validate an atom's simultaneous scattering of two photons. If true, it could complicate RF's prospects in quantum information applications. Here, we propose a unified model that treats all RF photons as spontaneous emission, one at a time, and can explain simultaneously both the RF's spectral and correlation properties. We theoretically derive the excitation power dependencies, with the strongest effects measurable at the single-photon incidence level, of the first-order coherence of the whole RF and super-bunching of the spectrally filtered, followed by experimental confirmation on a semiconductor quantum dot micro-pillar device. Furthermore, our model explains peculiar coincidence bunching observed in phase-dependent two-photon interference experiments. Our work provides novel understandings of coherent light-matter interaction and may stimulate new applications., Comment: Equation 4 is updated to cover all two-level emitters, with or without a cavity

Coherent-one-way (COW) quantum key distribution (QKD) is a significant communication protocol that has been implemented experimentally and deployed in practical products due to its simple equipment requirements. However, existing security analyses of COW-QKD either provide a short transmission distance or lack immunity against coherent attacks in the finite-key regime. In this paper, we present a tight finite-key security analysis within the universally composable framework for a variant of COW-QKD, which has been proven to extend the secure transmission distance in the asymptotic case. We combine the quantum leftover hash lemma and entropic uncertainty relation to derive the key rate formula. When estimating statistical parameters, we use the recently proposed Kato's inequality to ensure security against coherent attacks and achieve a higher key rate. Our paper confirms the security and feasibility of COW-QKD for practical application and lays the foundation for further theoretical study and experimental implementation., Comment: 15 pages, 7 figures

Monolayer hBN has attracted interest as a potentially weakly interacting 2D insulating layer in heterostructures. Recently, wafer-scale hBN growth on Cu(111) has been demonstrated for semiconductor chip fabrication processes and transistor action. For all these applications, the perturbation on the underlying electronically active layers is critical. For example, while hBN on Cu(111) has been shown to preserve the Cu(111) surface state 2D electron gas, it was previously unknown how this varies over the sample and how it is affected by local electronic corrugation. Here, we demonstrate that the Cu(111) surface state under wafer-scale hBN is robustly homogeneous in energy and spectral weight over nanometer length scales and over atomic terraces. We contrast this with a benchmark spectral feature associated with interaction between BN atoms and the Cu surface, which varies with the Moir\'e pattern of the hBN/Cu(111) sample and is dependent on atomic registry. This work demonstrates that fragile 2D electron systems and interface states are largely unperturbed by local variations created by the hBN due to atomic-scale interactions with the substrate, thus providing a remarkably transparent window on low-energy electronic structure below the hBN monolayer.

The 3D local atomic structures and crystal defects at the interfaces of heterostructures control their electronic, magnetic, optical, catalytic and topological quantum properties, but have thus far eluded any direct experimental determination. Here we determine the 3D local atomic positions at the interface of a MoS2-WSe2 heterojunction with picometer precision and correlate 3D atomic defects with localized vibrational properties at the epitaxial interface. We observe point defects, bond distortion, atomic-scale ripples and measure the full 3D strain tensor at the heterointerface. By using the experimental 3D atomic coordinates as direct input to first principles calculations, we reveal new phonon modes localized at the interface, which are corroborated by spatially resolved electron energy-loss spectroscopy. We expect that this work will open the door to correlate structure-property relationships of a wide range of heterostructure interfaces at the single-atom level.

The electronic and optoelectronic properties of two dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS$_2$ or WSe$_2$)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials., Comment: accepted version

Identifying the point defects in 2D materials is important for many applications. Recent studies have proposed that W vacancies are the predominant point defect in 2D WSe2, in contrast to theoretical studies, which predict that chalcogen vacancies are the most likely intrinsic point defects in transition metal dichalcogenide semiconductors. We show using first principles calculations, scanning tunneling microscopy (STM) and scanning transmission electron microscopy experiments, that W vacancies are not present in our CVD-grown 2D WSe2. We predict that O-passivated Se vacancies (O_Se) and O interstitials (Oins) are present in 2D WSe2, because of facile O2 dissociation at Se vacancies, or due to the presence of WO3 precursors in CVD growth. These defects give STM images in good agreement with experiment. The optical properties of point defects in 2D WSe2 are important because single photon emission (SPE) from 2D WSe2 has been observed experimentally. While strain gradients funnel the exciton in real space, point defects are necessary for the localization of the exciton at length scales that enable photons to be emitted one at a time. Using state-of-the-art GW-Bethe-Salpeter-equation calculations, we predict that only Oins defects give localized excitons within the energy range of SPE in previous experiments, making them a likely source of previously observed SPE. No other point defects (O_Se, Se vacancies, W vacancies and Se_W antisites) give localized excitons in the same energy range. Our predictions suggest ways to realize SPE in related 2D materials and point experimentalists toward other energy ranges for SPE in 2D WSe2.

Hybrid van der Waals (vdW) heterostructures constructed by the integration of organic molecules and two-dimensional (2D) transition metal dichalcogenide (TMD) materials have useful tunable properties for flexible electronic devices. Due to the chemically inert and atomically smooth nature of the TMD surface, well-defined crystalline organic films form atomically sharp interfaces facilitating optimal device performance. Here, the surface phase transformation of the supramolecular packing structure of fluorinated fullerene (C60F48) on single-layer (SL) tungsten diselenide (WSe2) is revealed by low-temperature (LT) scanning tunnelling microscopy (STM), from thermally stable liquid to solid phases as the coverage increases. Statistical analysis of the intermolecular interaction potential reveals that the repulsive dipole-dipole interaction induced by interfacial charge transfer and substrate-mediated interactions play important roles in stabilizing the liquid C60F48 phases. Theoretical calculations further suggest that the dipole moment per C60F48 molecule varies with the surface molecule density, and the liquid-solid transformation could be understood from the perspective of the thermodynamic free energy for open systems. This study offers new insights into the growth behaviour at 2D organic/TMD hybrid heterointerfaces.

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications., Comment: 22 pages main manuscript and methods, 4 main figures, 30 pages supplementary materials, 16 extended figures