1. Cd/sup 2+//NH/sub 3/-treatment of high-gap CuGaSe/sub 2/ thin film solar cell absorbers
- Author
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Ch.-H. Fischer, Marin Rusu, Th. Schedel-Niedrig, A. Grimm, Ch. Jung, L.M. Kotschau, M.C. Lux-Steiner, W. Gudat, Lothar Weinhardt, Paul Pistor, Iver Lauermann, Oliver Fuchs, Marcus Bär, Sebastian Lehmann, and Clemens Heske
- Subjects
Materials science ,Chalcopyrite ,Analytical chemistry ,Wide-bandgap semiconductor ,Synchrotron radiation ,Auger ,law.invention ,X-ray photoelectron spectroscopy ,law ,visual_art ,Excited state ,Solar cell ,visual_art.visual_art_medium ,Surface modification - Abstract
For chalcopyrite-based solar cells with conventional CdS buffers (prepared in a chemical bath), the Cd/sup 2+//NH/sub 3/-treatment can be used as a tool to visualize the processes during the initial stages of interface formation in the chemical bath. For high-gap CuGaSe/sub 2/ (CGSe) - an absorber material which has not yet shown its full potential in terms of solar cell performance - a CdSe surface compound was recently identified at the CGSe absorber surface after this kind of simple surface conditioning. In this contribution, we will clarify whether the [Ga]/[Cu]-ratio of the CGSe absorber has an impact on the formation of this non-abrupt interface. In addition, the lateral variation of the observed absorber surface modification will be investigated. Thus, as-deposited and Cd/sup 2+//NH/sub 3/-treated CGSe surfaces were characterized by X-ray excited Auger and photoelectron spectroscopy using Mg K/spl alpha/ and/or tuneable monochromatized synchrotron radiation.
- Published
- 2005
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