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6. Advances in understanding metal-semiconductor interfaces by surface science techniques

Author

L.J. Brillson

Subjects
Surface (mathematics), Materials science, Schottky barrier, General Materials Science, Nanotechnology, General Chemistry, Condensed Matter Physics, Atomic units, Chemical reaction, Metal semiconductor, Characterization (materials science)
Abstract

This review focuses on recent progress in understanding metal-semiconductor interfaces through the use of ultrahigh vacuum surface science techniques. Characterization of electronic and chemical structure on an atomic scale reveals the importance of strong metal-semiconductor interactions such as interface chemical reaction, interdiffusion, and defect formation and their influence on Schottky barrier formation.

Published
1983
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9. Semiconductor Interfaces

Author

G. Margaritondo, L.J. Brillson, V. Brusic, J.R. Chelikowsky, R.W. Grant, and G.W. Rubloff

Subjects
General Engineering

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