32 results on '"L. Martin-Samos"'
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2. Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study
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L. Martin Samos, Nicolas Richard, P.L. Julliard, Denis Rideau, Anne Hémeryck, A. LeRoch, Vincent Goiffon, Filadelfo Cristiano, Antoine Jay, S. de Gironcoli, Commissariat à l'Energie Atomique et aux énergies alternatives - CEA (FRANCE), Centre National de la Recherche Scientifique - CNRS (FRANCE), Institut National Polytechnique de Toulouse - Toulouse INP (FRANCE), Institut National des Sciences Appliquées de Toulouse - INSA (FRANCE), Institut Supérieur de l'Aéronautique et de l'Espace - ISAE-SUPAERO (FRANCE), STMicroelectronics (FRANCE), Université Toulouse III - Paul Sabatier - UT3 (FRANCE), Université Toulouse - Jean Jaurès - UT2J (FRANCE), Université Toulouse 1 Capitole - UT1 (FRANCE), CNR Istituto Officina dei Materiali - IOM (Rome, Italy), Équipe Modélisation Multi-niveaux des Matériaux (LAAS-M3), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Équipe Matériaux et Procédés pour la Nanoélectronique (LAAS-MPN), STMicroelectronics [Crolles] (ST-CROLLES), Institut Supérieur de l'Aéronautique et de l'Espace (ISAE-SUPAERO), CEA DAM ILE-DE-FRANCE - Bruyères-le-Châtel [Arpajon] (CEA DAM IDF), CNR Istituto Officina dei Materiali (IOM), Consiglio Nazionale delle Ricerche [Roma] (CNR), Scuola Internazionale Superiore di Studi Avanzati / International School for Advanced Studies (SISSA / ISAS), European Project: 871813,H2020-EU.2.1.1. - INDUSTRIAL LEADERSHIP - Leadership in enabling and industrial technologies - Information and Communication Technologies (ICT) ,MUNDFAB (2020), Centre d'Études de Limeil-Valenton (CEA-DAM), Direction des Applications Militaires (DAM), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), and National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR)
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Band gap ,Radiation effects ,02 engineering and technology ,01 natural sciences ,Signal ,Settore FIS/03 - Fisica della Materia ,Atomic measurements ,Metastability ,0103 physical sciences ,cross sections ,Cluster (physics) ,Traitement du signal et de l'image ,Electronics ,defects ,010302 applied physics ,Physics ,[PHYS]Physics [physics] ,Modulation ,Semiconductor device measurement ,business.industry ,defects electronic states ,Time measurement ,021001 nanoscience & nanotechnology ,Discrete Fourier transforms ,Computational physics ,Semiconductor ,Dark current ,random telegraph signal ,(SISPAD)(SISPAD)Dark current ,0210 nano-technology ,business ,electronic states ,Switches - Abstract
International audience; The origin of the random telegraph signal (RTS) observed in semiconductors-based electronic devices is still subject to debates. In this work, by means of atomistic simulations, typical clusters of defects as could be obtained after irradiation or implantation are studied as a possible cause for RTS. It is shown that: (i) a cluster of defects is highly metastable, (ii) it introduces several electronic states in the band gap, (iii) it has an electronic cross section much higher than the one of point defects. These three points can simultaneously explain why an electronhole generation rate can switch with time, while respecting the experimental measurement.
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- 2021
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3. Evidence of enhanced photocurrent response in corannulene films
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Laura Zoppi, Jinta Mathew, Nadiia Pastukhova, Kim K. Baldridge, Egon Pavlica, Gvido Bratina, Jay S. Siegel, and L. Martin Samos
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Photocurrent ,education.field_of_study ,Thin layers ,Chemistry ,General Chemical Engineering ,Photoconductivity ,Population ,02 engineering and technology ,General Chemistry ,010402 general chemistry ,021001 nanoscience & nanotechnology ,Photochemistry ,01 natural sciences ,Molecular physics ,0104 chemical sciences ,Photoexcitation ,Condensed Matter::Materials Science ,chemistry.chemical_compound ,Conducting channels Corannulene Photoconductivity spectrum Photocurrent response Potential mechanism Quantum nanostructures Solution phase Thin layers ,Atomic orbital ,Corannulene ,Molecular orbital ,0210 nano-technology ,education - Abstract
Photoconductivity spectra measured in non-crystalline corannulene thin layers are compared to optical absorption in solution phase and thin films. The unexpected enhanced photoconductivity is correlated with GW-BSE theoretical predictions of corannulene gas-phase excitonic spectra. Theoretical analysis reveals a consistent contribution involving transitions to Super Atomic Molecular Orbitals (SAMOs), a unique set of diffuse orbitals typical of curved conjugated constructs. Results suggest SAMO population via direct photoexcitation as a potential mechanism towards exploiting these diffuse orbitals as conducting channels in suitably assembled quantum nanostructures or solids.
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- 2017
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4. v-P
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Luigi, Giacomazzi, L, Martin-Samos, A, Alessi, N, Richard, A, Boukenter, Y, Ouerdane, S, Girard, M, Valant, and S, De Gironcoli
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Electronic properties and materials ,Structure of solids and liquids ,Article - Abstract
Synthetic vitreous silica is currently the preferred material for the production of optical fibres because of the several excellent properties of this glass, e.g. high transmission in the visible and IR domains, high mechanical strength, chemical durability, and ease of doping with various materials. For instance, fiber lasers and amplifiers exploit the light amplification properties provided by rare-earth ions employed as dopants in the core of silica-based optical fibers. The structure and composition of the nearest neighbor shell surrounding rare-earth ions in silica-based optical fibers and amplifiers have been intensively debated in the last decade. To reduce aggregation effects between rare-earth ions, co-dopants such as phosphorus and aluminium are added as structural modifiers; phosphorus-doping, in particular, has proved to be very efficient in dissolving rare-earth ions. In this work, we provide further insights concerning the embedding of P atoms into the silica network, which may be relevant for explaining the ease of formation of a phosphorus pentoxide nearest-neighbor shell around a rare-earth dopant. In particular, by means of first-principles calculations, we discuss alternative models for an irradiation (UV, x–, γ-rays) induced paramagnetic center, i.e. the so called room-temperature phosphorus-oxygen-hole center, and its precursors. We report that the most likely precursor of a room-temperature phosphorus-oxygen-hole center comprises of a micro-cluster of a few (at least two) neighboring phosphate tetrahedra, and correspondingly that the occurrence of isolated [(O-)2P(=O)2]− units is unlikely even at low P-doping concentrations. In fact, this work predicts that the symmetric stretching of P=O bonds in isolated [(O-)2P(=O)2]− units appears as a Raman band at a frequency of ~1110 cm−1, and only by including at least another corner-sharing phosphate tetrahedron, it is shown to shift to higher frequencies (up to ~40 cm−1) due to the shortening of P=O bonds, thereby leading to an improved agreement with the observed Raman band located at ~1145 cm−1.
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- 2019
5. Paramagnetic H-related defects in silica: a first-principles investigation First-principles investigation of H-defects in SiO2
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Giacomazzi, Luigi, L Martin-Samos, and N Richard
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- 2016
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6. Oxygen and Silicon Self-Diffusion in Quartz and Silica: The Contribution of First Principles Calculations
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Guido Roma, Yves Limoge, and L. Martin-Samos
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Work (thermodynamics) ,Self-diffusion ,Radiation ,Materials science ,Silicon ,Plane wave ,chemistry.chemical_element ,Nanotechnology ,Condensed Matter Physics ,Kinetic energy ,Oxygen ,chemistry ,Chemical physics ,Impurity ,General Materials Science ,Quartz - Abstract
Despite its importance as a material in many domains, SiO2 is still a very badly known material from the point of view of materials science. Experimentally the silicon and oxygen diffusion has been determined in silica as well as in quartz, but several discrepancies arise between different authors. From a theoretical point of view the various possible atomic defects have mostly been studied in an electronic perspective, so even the simplest ones remained quite poorly known till recently, the silicon related ones remaining completely unknown. The great similarity between silica and quartz properties is in favour of a common model. The determination of the precise formation and migration energies of the various defects is then of paramount importance for the understanding of the kinetic properties of SiO2. We will present in this paper the results of a study of the formation and mobility properties of oxygen and silicon defects in the view of determining the self-diffusion mechanism(s). Our work relies on up to date ab-initio methods: total energy calculations in a DFT-LDA approach, using either plane wave or pseudo-atomic basis for the wave functions and pseudopotentials.We shall discuss the role of the various parameters controlling the kinetic behaviour: chemical potential of the species, nature of the main impurities, cristallinity, and preparation mode of the sample.
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- 2006
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7. Oxygen Self-Diffusion Mechanisms in Silica by First-Principles
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Jean-Paul Crocombette, Guido Roma, Nicolas Richard, Yves Limoge, and L. Martin-Samos
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Self-diffusion ,Radiation ,Materials science ,chemistry ,Chemical physics ,First principle ,chemistry.chemical_element ,General Materials Science ,Diffusion (business) ,Condensed Matter Physics ,Oxygen - Published
- 2005
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8. First principles study of oxygen-deficient centers in pure and Ge-doped silica
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Nicolas Richard, V. Cuny, Sébastien Girard, Aziz Boukenter, Jacques Meunier, Youcef Ouerdane, L. Martin-Samos, Département de Conception et Réalisation des Experimentations, CEA-DIF (DCRE CEA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Dipartimento di Fisica, Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia (UNIMORE), Laboratoire Hubert Curien (LHC), and Institut d'Optique Graduate School (IOGS)-Université Jean Monnet - Saint-Étienne (UJM)-Centre National de la Recherche Scientifique (CNRS)
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[PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] ,Chemistry ,Charge density ,chemistry.chemical_element ,Silica ,Electronic structure ,Condensed Matter Physics ,Oxygen ,Crystallographic defect ,Standard enthalpy of formation ,Electronic, Optical and Magnetic Materials ,Bond length ,Crystallography ,Ab initio quantum chemistry methods ,Chemical physics ,Materials Chemistry ,Ceramics and Composites ,Doping ,Density functional theory ,Defects ,Ab initio calculations - Abstract
International audience; Using ab initio calculations on 108 atoms pure- and Ge-doped (2.8 mol%) silica-based supercells, we performed a statistical study on the electronic structure and energetic contribution of neutral oxygen vacancies, also named Oxygen Deficient Centers (ODCs). All the 72 oxygen sites in the amorphous silica (a-SiO2) cell were considered as possible candidates for the formation of the vacancies leading to study 72 different Si-ODCs ('Si\Si' bond) and 144 Ge-ODCs ('Ge\Si' bond). The distributions of structural parameters and formation energies of the ODCs were evaluated through Density Functional Theory calculations. The obtained parameters showed a wide distribution that can be mainly associated with the differences in the local environments surrounding the point defects. Weshow that the formation energies of Si and Ge-ODCs generated from the same oxygen site of our supercell are correlated. Moreover, the local asymmetry around the Si\Ge or Ge\Si bond can also affect their formation energies, providing a strong evidence for the influence of short-range environment on the ODC generation efficiency.
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- 2011
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9. Atomic and electronic structure of the nonpolarGaN(11¯00)surface
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P. Löptien, Martin Wenderoth, M. Bertelli, A. Rizzi, L. Martin-Samos, Andrea Ferretti, Carlo Maria Bertoni, Alessandra Catellani, Maria Clelia Righi, and Rainer G. Ulbrich
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Physics ,Band gap ,Scanning tunneling spectroscopy ,Fermi energy ,02 engineering and technology ,Electronic structure ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,01 natural sciences ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,0103 physical sciences ,Density functional theory ,Local-density approximation ,Atomic physics ,Scanning tunneling microscope ,010306 general physics ,0210 nano-technology ,Surface states - Abstract
We present a cross-section scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and ab initio density-functional theory simulations study of the cleaved nonpolar $(1\overline{1}00)$ surface ($m$-plane) of $n$-type HVPE GaN free-standing quasisubstrates. Atomically resolved empty and filled states STM topographies show that no reconstruction occurs upon cleavage, as predicted by theory. STS measurements on clean and atomically flat cleaved surfaces (defect concentration ${\ensuremath{\sigma}}_{d}\ensuremath{\le}2\ifmmode\times\else\texttimes\fi{}{10}^{12}\text{ }{\text{cm}}^{\ensuremath{-}2}$) show that the Fermi energy is not pinned and the tunneling current flows through Ga-like electronic states lying outside the fundamental band gap. On surface areas with defect concentration ${\ensuremath{\sigma}}_{d}\ensuremath{\ge}3\ifmmode\times\else\texttimes\fi{}{10}^{13}\text{ }{\text{cm}}^{\ensuremath{-}2}$, the Fermi energy is pinned inside the band gap in defect-derived surface states and tunneling through filled (empty) N-like (Ga-like) states takes place.
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- 2009
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10. Oxygen neutral defects in silica: Origin of the distribution of the formation energies.
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L. Martin-Samos, Y. Limoge, N. Richard, J. P. Crocombette, G. Roma, E. Anglada, and E. Artacho
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- 2004
11. Photoactivated processes in optical fibers: generation and conversion mechanisms of twofold coordinated Si and Ge atoms.
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Luigi Giacomazzi, L Martin-Samos, A Boukenter, Y Ouerdane, S Girard, A Alessi, S de Gironcoli, and N Richard
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- *
NANOTECHNOLOGY , *SILICA , *GERMANIUM - Abstract
In this work we present an extensive investigation of nanoscale physical phenomena related to oxygen-deficient centers (ODCs) in silica and Ge-doped silica by means of first-principles calculations, including nudged-elastic band, electron paramagnetic resonance parameters calculations, and many-body perturbation theory (GW and Bethe–Salpeter equation) techniques. We show that by neutralizing positively charged oxygen monovacancies we can obtain model structures of twofold Si and Ge defects of which the calculated absorption spectra and singlet-to-triplet transitions are in excellent agreement with the experimental optical absorption and photo-luminescence data. In particular we provide an exhaustive analysis of the main exciton peaks related to the presence of twofold defects including long-range correlation effects. By calculating the reaction pathways and energy barriers necessary for the interconversion, we advance a double precursory origin of the and Ge(2) centers as due to the ionization of neutral oxygen monovacancies (Si–Si and Ge–Si dimers) and as due to the ionization of twofold Si and Ge defects. Furthermore two distinct structural conversion mechanisms are found to occur between the neutral oxygen monovacancy and the twofold Si (and Ge) atom configurations. Such conversion mechanisms allow to explain the radiation induced generation of the ODC(II) centers, their photobleaching, and also their generation during the drawing of optical fibers. [ABSTRACT FROM AUTHOR]
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- 2017
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12. Study of point defects in as-drawn and irradiated Ge-doped optical fibers using cathodoluminescence.
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I. Reghioua, S. Girard, A. Alessi, D. Di Francesca, E. Marin, A. Morana, M. Fanetti, L. Martin-Samos, N. Richard, M. Raine, M. Valant, A. Boukenter, and Y. Ouerdane
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- 2017
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13. Irradiation temperature effects on the induced point defects in Ge-doped optical fibers.
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A. Alessi, I. Reghioua, S. Girard, S. Agnello, D. Di Francesca, L. Martin-Samos, C. Marcandella, N. Richard, M. Cannas, A. Boukenter, and Y. Ouerdane
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- 2017
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14. SOFI: Finding point group symmetries in atomic clusters as finding the set of degenerate solutions in a shape-matching problem.
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Gunde M, Salles N, Grisanti L, Martin-Samos L, and Hemeryck A
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Point Group (PG) symmetries play a fundamental role in many aspects of theoretical chemistry and computational materials science. With the objective to automatize the search of PG symmetry operations of generic atomic clusters, we present a new algorithm called Symmetry Operation FInder (SOFI). SOFI addresses the problem of identifying PG symmetry by framing it as a degenerate shape-matching problem, where the multiple solutions correspond to distinct symmetry operations. The developed algorithm is compared against three other algorithms dedicated to PG identification on a large set of atomic clusters. The results, along with some illustrative use cases, showcase the effectiveness of SOFI. The SOFI algorithm is released as part of the iterative rotations and assignments library, accessible at https://github.com/mammasmias/IterativeRotationsAssignments., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)
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- 2024
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15. Exploring potential energy surfaces to reach saddle points above convex regions.
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Gunde M, Jay A, Poberžnik M, Salles N, Richard N, Landa G, Mousseau N, Martin-Samos L, and Hemeryck A
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Saddle points on high-dimensional potential energy surfaces (PES) play a determining role in the activated dynamics of molecules and materials. Building on approaches dating back more than 50 years, many open-ended transition-state search methods have been developed to follow the direction of negative curvature from a local minimum to an adjacent first-order saddle point. Despite the mathematical justification, these methods can display a high failure rate: using small deformation steps, up to 80% of the explorations can end up in a convex region of the PES, where all directions of negative curvature vanish, while if the deformation is aggressive, a similar fraction of attempts lead to saddle points that are not directly connected to the initial minimum. In high-dimension PES, these reproducible failures were thought to only increase the overall computational cost, without having any effect on the methods' capacity to find all saddle points surrounding a minimum. Using activation-relaxation technique nouveau (ARTn), we characterize the nature of the PES around minima, considerably expanding on previous knowledge. We show that convex regions can lie on activation pathways and that not exploring beyond them can introduce significant bias in the saddle-point search. We introduce an efficient approach for traversing the convex regions, almost eliminating exploration failures, while multiplying by almost 10 the number of identified unique and connected saddle points as compared to the standard ARTn, thus underlining the importance of correctly handling convex regions for completeness of saddle point explorations., (© 2024 Author(s). Published under an exclusive license by AIP Publishing.)
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- 2024
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16. Identification of paramagnetic centers in irradiated Sn-doped silicon dioxide by first-principles.
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Giacomazzi L, Martin-Samos L, Richard N, Ceresoli D, and Alessi A
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We present a first-principles investigation of Sn paramagnetic centers in Sn-doped vitreous silica based on calculations of the electron paramagnetic resonance (EPR) parameters. The present investigation provides evidence of an extended analogy between the family of Ge paramagnetic centers in Ge-doped silica and the family of Sn paramagnetic centers in Sn-doped silica for SnO
2 concentrations below phase separation. We infer, also keeping into account the larger spin-orbit coupling of Sn atoms with respect to Ge atoms, that a peculiar and highly distorted three-fold coordinated Sn center (i.e. the Sn forward-oriented configuration) should give rise to an orthorhombic EPR signal of which we suggest a fingerprint in the EPR spectra recorded by Chiodini et al (2001 Phys. Rev. B 64 073102). Given its structural analogy with theEα'and Ge(2) centers, we here name it as the 'Sn(2) center'. Moreover, we show that the single trapped electron at a SnO4 tetrahedron constitutes a paramagnetic center responsible for the orthorhombic EPR signal reported in Chiodini et al (1998 Phys. Rev. B 58 9615), confuting the early assignment to a distorted variant of the Sn- E ' center. We hence relabel the latter orthorhombic EPR signal as the 'Sn(1) center' due to its analogy to the Ge(1) center in Ge-doped silica., (Creative Commons Attribution license.)- Published
- 2024
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17. Deep Levels and Electron Paramagnetic Resonance Parameters of Substitutional Nitrogen in Silicon from First Principles.
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Simha C, Herrero-Saboya G, Giacomazzi L, Martin-Samos L, Hemeryck A, and Richard N
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Nitrogen is commonly implanted in silicon to suppress the diffusion of self-interstitials and the formation of voids through the creation of nitrogen-vacancy complexes and nitrogen-nitrogen pairs. Yet, identifying a specific N-related defect via spectroscopic means has proven to be non-trivial. Activation energies obtained from deep-level transient spectroscopy are often assigned to a subset of possible defects that include non-equivalent atomic structures, such as the substitutional nitrogen and the nitrogen-vacancy complex. Paramagnetic N-related defects were the object of several electron paramagnetic spectroscopy investigations which assigned the so-called SL5 signal to the presence of substitutional nitrogen (NSi). Nevertheless, its behaviour at finite temperatures has been imprecisely linked to the metastability of the NSi center. In this work, we build upon the robust identification of the SL5 signature and we establish a theoretical picture of the substitutional nitrogen. Through an understanding of its symmetry-breaking mechanism, we provide a model of its fundamental physical properties (e.g., its energy landscape) based on ab initio calculations. Moreover by including more refined density functional theory-based approaches, we calculate EPR parameters (↔g and ↔A tensors), elucidating the debate on the metastability of NSi. Finally, by computing thermodynamic charge transition levels within the GW method, we present reference values for the donor and acceptor levels of NSi.
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- 2023
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18. The Influence of Catechols on the Magnetization of Iron Oxide Nanoparticles.
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Čampelj S, Pobrežnik M, Landovsky T, Kovač J, Martin-Samos L, Hamplova V, and Lisjak D
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In this study, MNPs were functionalized with pyrocatechol (CAT), pyrogallol (GAL), caffeic acid (CAF), and nitrodopamine (NDA) at pH 8 and pH 11. The functionalization of the MNPs was successful, except in the case of NDA at pH 11. The thermogravimetric analyses indicated that the surface concentration of the catechols was between 1.5 and 3.6 molecules/nm
2 . The saturation magnetizations (Ms ) of the functionalized MNPs were higher than the starting material. XPS analyses showed only the presence of Fe(III) ions on the surface, thus refuting the idea of the Fe being reduced and magnetite being formed on the surfaces of the MNPs. Density functional theory (DFT) calculations were performed for two modes of adsorption of CAT onto two model surfaces: plain and adsorption via condensation. The total magnetization of both adsorption modes remained the same, indicating that the adsorption of the catechols does not affect the Ms . The analyses of the size and the size distribution showed an increase in the average size of the MNPs during the functionalization process. This increase in the average size of the MNPs and the reduction in the fraction of the smallest (i.e., <10 nm) MNPs explained the increase in the Ms values.- Published
- 2023
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19. Saturation magnetisation as an indicator of the disintegration of barium hexaferrite nanoplatelets during the surface functionalisation.
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Lisjak D, Arčon I, Poberžnik M, Herrero-Saboya G, Tufani A, Mavrič A, Valant M, Boštjančič PH, Mertelj A, Makovec D, and Martin-Samos L
- Abstract
Barium hexaferrite nanoplatelets (BHF NPLs) are permanent nanomagnets with the magnetic easy axis aligned perpendicular to their basal plane. By combining this specific property with optimised surface chemistry, novel functional materials were developed, e.g., ferromagnetic ferrofluids and porous nanomagnets. We compared the interaction of chemically different phosphonic acids, hydrophobic and hydrophilic with 1-4 phosphonic groups, with BHF NPLs. A decrease in the saturation magnetisation after functionalising the BHF NPLs was correlated with the mass fraction of the nonmagnetic coating, whereas the saturation magnetisation of the NPLs coated with a tetraphosphonic acid at 80 °C was significantly lower than expected. We showed that such a substantial decrease in the saturation magnetisation originates from the disintegration of BHF NPLs, which was observed with atomic-resolution scanning transmission electron microscopy and confirmed by a computational study based on state-of-the-art first-principles calculations. Fe K-edge XANES (X-ray absorption near-edge structure) and EXAFS (Extended X-ray absorption fine structure) combined with Fourier-transformed infrared (FTIR) spectroscopy confirmed the formation of an Fe-phosphonate complex on the partly decomposed NPLs. Comparing our results with other functionalised magnetic nanoparticles confirmed that saturation magnetisation can be exploited to identify the disintegration of magnetic nanoparticles when insoluble disintegration products are formed., (© 2023. The Author(s).)
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- 2023
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20. IRA: A Shape Matching Approach for Recognition and Comparison of Generic Atomic Patterns.
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Gunde M, Salles N, Hémeryck A, and Martin-Samos L
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- Algorithms, Silicon Dioxide, Software
- Abstract
We propose a versatile, parameter-less approach for solving the shape matching problem, specifically in the context of atomic structures when atomic assignments are not known a priori. The algorithm Iteratively suggests Rotated atom-centered reference frames and Assignments (iterative rotations and assignments (IRA)). The frame for which a permutationally invariant set-set distance, namely, the Hausdorff distance, returns a minimal value is chosen as the solution of the matching problem. IRA is able to find rigid rotations, reflections, translations, and permutations between structures with different numbers of atoms, for any atomic arrangement and pattern, periodic or not. When distortions are present between the structures, optimal rotation and translation are found by further applying a standard singular value decomposition-based method. To compute the atomic assignments under the one-to-one assignment constraint, we develop our own algorithm, constrained shortest distance assignments (CShDA). The overall approach is extensively tested on several structures, including distorted structural fragments. The efficiency of the proposed algorithm is shown as a benchmark comparison against two other shape matching algorithms. We discuss the use of our approach for the identification and comparison of structures and structural fragments through two examples: a replica-exchange trajectory of a cyanine molecule, in which we show how our approach could aid the exploration of relevant collective coordinates for clustering the data, and a SiO
2 amorphous model, in which we compute distortion scores, and compare them with a classical strain-based potential. The source code and benchmark data are available at https://github.com/mammasmias/IterativeRotationsAssignments.- Published
- 2021
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21. Finding Reaction Pathways and Transition States: r-ARTn and d-ARTn as an Efficient and Versatile Alternative to String Approaches.
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Jay A, Huet C, Salles N, Gunde M, Martin-Samos L, Richard N, Landa G, Goiffon V, De Gironcoli S, Hémeryck A, and Mousseau N
- Abstract
Finding transition states and diffusion pathways is essential to understand the evolution of materials and chemical reactions. Such characterization is hampered by the heavy computation costs associated with exploring energy landscapes at ab initio accuracy. Here, we revisit the activation-relaxation technique (ARTn) to considerably reduce its costs when used with the density functional theory and propose three adapted versions of the algorithm to efficiently (i) explore the energy landscape of complex materials with the knowledge of a single minimum (ARTn); (ii) identify a transition state when two minima or a guess transition state is given (refining ART or r-ART); and (iii) reconstruct complex pathways between two given states (directed ART or d-ART). We show the application of these three variants on benchmark examples and on various complex defects in silicon. For the latter, the presented improvements to ART lead to much more precise transition states while being 2 to 6 times faster than the commonly used string methods such as the climbing image nudged elastic band method (CI-NEB).
- Published
- 2020
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22. Collective dipole effects in ionic transport under electric fields.
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Salles N, Martin-Samos L, de Gironcoli S, Giacomazzi L, Valant M, Hemeryck A, Blaise P, Sklenard B, and Richard N
- Abstract
In the context of ionic transport in solids, the variation of a migration barrier height under electric fields is traditionally assumed to be equal to the classical electric work of a point charge that carries the transport charge. However, how reliable is this phenomenological model and how does it fare with respect to Modern Theory of Polarization? In this work, we show that such a classical picture does not hold in general as collective dipole effects may be critical. Such effects are unraveled by an appropriate polarization decomposition and by an expression that we derive, which defines the equivalent polarization-work charge. The equivalent polarization-work charge is not equal neither to the transported charge, nor to the Born effective charge of the migrating atom alone, but it is defined by the total polarization change at the transition state. Our findings are illustrated by oxygen charged defects in MgO and in SiO
2 .- Published
- 2020
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23. v-P 2 O 5 micro-clustering in P-doped silica studied by a first-principles Raman investigation.
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Giacomazzi L, Martin-Samos L, Alessi A, Richard N, Boukenter A, Ouerdane Y, Girard S, Valant M, and De Gironcoli S
- Abstract
Synthetic vitreous silica is currently the preferred material for the production of optical fibres because of the several excellent properties of this glass, e.g. high transmission in the visible and IR domains, high mechanical strength, chemical durability, and ease of doping with various materials. For instance, fiber lasers and amplifiers exploit the light amplification properties provided by rare-earth ions employed as dopants in the core of silica-based optical fibers. The structure and composition of the nearest neighbor shell surrounding rare-earth ions in silica-based optical fibers and amplifiers have been intensively debated in the last decade. To reduce aggregation effects between rare-earth ions, co-dopants such as phosphorus and aluminium are added as structural modifiers; phosphorus-doping, in particular, has proved to be very efficient in dissolving rare-earth ions. In this work, we provide further insights concerning the embedding of P atoms into the silica network, which may be relevant for explaining the ease of formation of a phosphorus pentoxide nearest-neighbor shell around a rare-earth dopant. In particular, by means of first-principles calculations, we discuss alternative models for an irradiation (UV, x-, γ-rays) induced paramagnetic center, i.e. the so called room-temperature phosphorus-oxygen-hole center, and its precursors. We report that the most likely precursor of a room-temperature phosphorus-oxygen-hole center comprises of a micro-cluster of a few (at least two) neighboring phosphate tetrahedra, and correspondingly that the occurrence of isolated [(O-)
2 P(=O)2 ]- units is unlikely even at low P-doping concentrations. In fact, this work predicts that the symmetric stretching of P=O bonds in isolated [(O-)2 P(=O)2 ]- units appears as a Raman band at a frequency of ~1110 cm-1 , and only by including at least another corner-sharing phosphate tetrahedron, it is shown to shift to higher frequencies (up to ~40 cm-1 ) due to the shortening of P=O bonds, thereby leading to an improved agreement with the observed Raman band located at ~1145 cm-1 .- Published
- 2019
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24. Study of silica-based intrinsically emitting nanoparticles produced by an excimer laser.
- Author
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Reghioua I, Fanetti M, Girard S, Di Francesca D, Agnello S, Martin-Samos L, Cannas M, Valant M, Raine M, Gaillardin M, Richard N, Paillet P, Boukenter A, Ouerdane Y, and Alessi A
- Abstract
We report an experimental study demonstrating the feasibility to produce both pure and Ge-doped silica nanoparticles (size ranging from tens up to hundreds of nanometers) using nanosecond pulsed KrF laser ablation of bulk glass. In particular, pure silica nanoparticles were produced using a laser pulse energy of 400 mJ on pure silica, whereas Ge-doped nanoparticles were obtained using 33 and 165 mJ per pulse on germanosilicate glass. The difference in the required energy is attributed to the Ge doping, which modifies the optical properties of the silica by facilitating energy absorption processes such as multiphoton absorption or by introducing absorbing point defects. Defect generation in bulk pure silica before nanoparticle production starts is also suggested by our results. Regarding the Ge-doped samples, scanning electron microscopy (SEM) and cathodoluminescence (CL) investigations revealed a good correspondence between the morphology of the generated particles and their emission signal due to the germanium lone pair center (GLPC), regardless of the energy per pulse used for their production. This suggests a reasonable homogeneity of the emission features of the samples. Similarly, energy dispersive X-ray spectroscopy (EDX) data showed that the O, Ge and Si signals qualitatively correspond to the particle morphology, suggesting a generally uniform chemical composition of the Ge-doped samples. No significant CL signal could be detected in pure silica nanoparticles, evidencing the positive impact of Ge for the development of intrinsically emitting nanoparticles. Transmission electron microscope (TEM) data suggested that the Ge-doped silica nanoparticles are amorphous. SEM and TEM data evidenced that the produced nanoparticles tend to be slightly more spherical in shape for a higher energy per pulse. Scanning transmission electron microscope (STEM) data have shown that, regardless of size and applied energy per pulse, in each nanoparticle, some inhomogeneity is present in the form of brighter (i.e., more dense) features of a few nanometers.
- Published
- 2019
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25. Optical Properties of Saturated and Unsaturated Carbonyl Defects in Polyethylene.
- Author
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Roma G, Bruneval F, and Martin-Samos L
- Abstract
Polyethylene (PE), one of the simplest and most used aliphatic polymers, is generally provided with a number of additives, in particular antioxidants, because of its tendency to get oxidized. Carbonyl defects, a product of the oxidation of PE, are occurring in various forms, in particular saturated ones, known as ketones, where a C═O double bond substitutes a CH
2 group, and various unsaturated ones, i.e., with further missing hydrogens. Many experimental investigations of the optical properties in the visible/UV range mainly attribute the photoluminescence of PE to one specific kind of unsaturated carbonyls, following analogies to the emission spectra of similar small molecules. However, the reason why saturated carbonyls should not be optically detected is not clear. We investigated the optical properties of PE with and without carbonyl defects using perturbative GW and the Bethe-Salpeter equation in order to take into account excitonic effects. We discuss the calculated excitonic states in comparison with experimental absorption/emission energies and the stability of both saturated and unsaturated carbonyl defects. We conclude that the unsaturated defects are indeed the best candidate for the luminescence of oxidized PE, and the reason is mainly due to oscillator strengths.- Published
- 2018
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26. Photoactivated processes in optical fibers: generation and conversion mechanisms of twofold coordinated Si and Ge atoms.
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Giacomazzi L, Martin-Samos L, Boukenter A, Ouerdane Y, Girard S, Alessi A, Gironcoli S, and Richard N
- Abstract
In this work we present an extensive investigation of nanoscale physical phenomena related to oxygen-deficient centers (ODCs) in silica and Ge-doped silica by means of first-principles calculations, including nudged-elastic band, electron paramagnetic resonance parameters calculations, and many-body perturbation theory (GW and Bethe-Salpeter equation) techniques. We show that by neutralizing positively charged oxygen monovacancies we can obtain model structures of twofold Si and Ge defects of which the calculated absorption spectra and singlet-to-triplet transitions are in excellent agreement with the experimental optical absorption and photo-luminescence data. In particular we provide an exhaustive analysis of the main exciton peaks related to the presence of twofold defects including long-range correlation effects. By calculating the reaction pathways and energy barriers necessary for the interconversion, we advance a double precursory origin of the [Formula: see text] and Ge(2) centers as due to the ionization of neutral oxygen monovacancies (Si-Si and Ge-Si dimers) and as due to the ionization of twofold Si and Ge defects. Furthermore two distinct structural conversion mechanisms are found to occur between the neutral oxygen monovacancy and the twofold Si (and Ge) atom configurations. Such conversion mechanisms allow to explain the radiation induced generation of the ODC(II) centers, their photobleaching, and also their generation during the drawing of optical fibers.
- Published
- 2017
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27. Buckybowl superatom states: a unique route for electron transport?
- Author
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Zoppi L, Martin-Samos L, and Baldridge KK
- Abstract
A unique paradigm for intermolecular charge transport mediated by diffuse atomic-like orbital (SAMOs), typically present in conjugated hollow shaped molecules, is investigated for C20H10 molecular fragments by means of G0W0 theory. Inclusion of many body screening and polarization effects is seen to be important for accurate prediction of electronic properties involving these diffuse orbitals. Theoretical predictions are made for the series of bowl-shaped fullerene fragments, C20H10, C30H10, C40H10, C50H10. Interesting results are found for the LUMO-SAMO energy gap in C20H10, which is shown to be nearly an order of magnitude lower that that determined for C60. Given the ability to support bowl fragments on metal surfaces, these results suggest the concrete possibility for exploiting SAMO-mediated electron transport in supramolecular conducting layers.
- Published
- 2015
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28. Structure-property relationships of curved aromatic materials from first principles.
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Zoppi L, Martin-Samos L, and Baldridge KK
- Abstract
CONSPECTUS: Considerable effort in the past decade has been extended toward achieving computationally affordable theoretical methods for accurate prediction of the structure and properties of materials. Theoretical predictions of solids began decades ago, but only recently have solid-state quantum techniques become sufficiently reliable to be routinely chosen for investigation of solids as quantum chemistry techniques are for isolated molecules. Of great interest are ab initio predictive theories for solids that can provide atomic scale insights into properties of bulk materials, interfaces, and nanostructures. Adaption of the quantum chemical framework is challenging in that no single theory exists that provides prediction of all observables for every material type. However, through a combination of interdisciplinary efforts, a richly textured and substantive portfolio of methods is developing, which promise quantitative predictions of materials and device properties as well as associated performance analysis. Particularly relevant for device applications are organic semiconductors (OSC), with electrical conductivity between that of insulators and that of metals. Semiconducting small molecules, such as aromatic hydrocarbons, tend to have high polarizabilities, small band-gaps, and delocalized π electrons that support mobile charge carriers. Most importantly, the special nature of optical excitations in the form of a bound electron-hole pairs (excitons) holds significant promise for use in devices, such as organic light emitting diodes (OLEDs), organic photovoltaics (OPVs), and molecular nanojunctions. Added morphological features, such as curvature in aromatic hydrocarbon structure, can further confine the electronic states in one or more directions leading to additional physical phenomena in materials. Such structures offer exploration of a wealth of phenomenology as a function of their environment, particularly due to the ability to tune their electronic character through functionalization. This Account offers discussion of current state-of-the-art electronic structure approaches for prediction of structural, electronic, optical, and transport properties of materials, with illustration of these capabilities from a series of investigations involving curved aromatic materials. The class of curved aromatic materials offers the ability to investigate methodology across a wide range of materials complexity, including (a) molecules, (b) molecular crystals, (c) molecular adsorbates on metal surfaces, and (d) molecular nanojunctions. A reliable pallet of theoretical tools for such a wide array relies on expertise spanning multiple fields. Working together with experimental experts, advancements in the fundamental understanding of structural and dynamical properties are enabling focused design of functional materials. Most importantly, these studies provide an opportunity to compare experimental and theoretical capabilities and open the way for continual improvement of these capabilities.
- Published
- 2014
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29. Oxygen deficient centers in silica: optical properties within many-body perturbation theory.
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Richard N, Martin-Samos L, Girard S, Ruini A, Boukenter A, Ouerdane Y, and Meunier JP
- Abstract
The electronic and optical properties of neutral oxygen vacancies, also called oxygen deficient centers (ODC(I)s), have been investigated in pure and germanium doped silica (both amorphous and α-quartz) through first-principles calculations. By means of density functional theory and many-body perturbation theory (GW approximation and the solution of the Bethe-Salpeter equation), we obtain the atomic and electronic structures as well as the optical absorption spectra of pure and Ge-doped silica in the presence of ODCs (SiODC(I)s and GeODC(I)s); our study allows us to interpret and explain the very nature of the optical features in experimental absorption spectra. The theoretical optical absorption signatures of these defects show excellent agreement with experiments for the SiODC(I)s, i.e. two absorption bands arise around 7.6 eV due to transitions between the defect levels. Our theoretical results also explain the experimental difficulty in measuring the GeODC(I) absorption band in Ge-doped silica, which was in fact tentatively assigned to a broad and very weak absorption signature, located between 7.5 and 8.5 eV. The influence of Ge-doping induced disorder on the nature of the defect-related optical transitions is discussed. We find that even if the atomic and electronic structures of SiODC(I) and GeODC(I) defects are relatively similar, the slight network distortion induced by the presence of the Ge atom, together with the increase in the Ge-Si bond asymmetry, completely changes the nature of the optical absorption edge.
- Published
- 2013
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30. Effect of molecular packing on corannulene-based materials electroluminescence.
- Author
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Zoppi L, Martin-Samos L, and Baldridge KK
- Abstract
The present investigation reports for the first time a detailed theoretical analysis of the optical absorption spectra of corannulene-based materials using state-of-the-art first-principles many-body GW-BSE theory. The study specifically addresses the nature of optical excitations for predictions regarding suitability for device fabrication. The well-defined structure-correlation relationship in functionalized corannulenes is used in a focused investigation of the predicted optoelectronic properties in both the isolated state and bulk crystals. The findings suggest that the excitonic properties are strongly dependent on the specific substituent group as well as the crystalline arrangement. Arylethynyl-substituted corannulene derivatives are shown to be the most suitable for device purposes.
- Published
- 2011
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31. Charged oxygen defects in SiO2: going beyond local and semilocal approximations to density functional theory.
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Martin-Samos L, Roma G, Rinke P, and Limoge Y
- Abstract
The long-standing problem of the oxygen self-diffusion mechanism in silicon dioxide, a prototypical oxide, both in the crystalline and in the amorphous phase, is studied from first principles. We demonstrate that the widely used local-density approximation to density functional theory (DFT) predicts a kinetic behavior of oxygen in strong disagreement with available experiments. Applying a recently developed scheme that combines DFT with quasiparticle energy calculations in the G0W0 approximation considerably improves defect energetics and gives gratifying agreement with experiment.
- Published
- 2010
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32. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials.
- Author
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Giannozzi P, Baroni S, Bonini N, Calandra M, Car R, Cavazzoni C, Ceresoli D, Chiarotti GL, Cococcioni M, Dabo I, Dal Corso A, de Gironcoli S, Fabris S, Fratesi G, Gebauer R, Gerstmann U, Gougoussis C, Kokalj A, Lazzeri M, Martin-Samos L, Marzari N, Mauri F, Mazzarello R, Paolini S, Pasquarello A, Paulatto L, Sbraccia C, Scandolo S, Sclauzero G, Seitsonen AP, Smogunov A, Umari P, and Wentzcovitch RM
- Abstract
QUANTUM ESPRESSO is an integrated suite of computer codes for electronic-structure calculations and materials modeling, based on density-functional theory, plane waves, and pseudopotentials (norm-conserving, ultrasoft, and projector-augmented wave). The acronym ESPRESSO stands for opEn Source Package for Research in Electronic Structure, Simulation, and Optimization. It is freely available to researchers around the world under the terms of the GNU General Public License. QUANTUM ESPRESSO builds upon newly-restructured electronic-structure codes that have been developed and tested by some of the original authors of novel electronic-structure algorithms and applied in the last twenty years by some of the leading materials modeling groups worldwide. Innovation and efficiency are still its main focus, with special attention paid to massively parallel architectures, and a great effort being devoted to user friendliness. QUANTUM ESPRESSO is evolving towards a distribution of independent and interoperable codes in the spirit of an open-source project, where researchers active in the field of electronic-structure calculations are encouraged to participate in the project by contributing their own codes or by implementing their own ideas into existing codes.
- Published
- 2009
- Full Text
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