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Here we present the first findings on the resonance response of DNA oligonucleotides deposited on silicon nanosandwich (SNS) and living bio-tissue to the THz irradiation that allow their identification by measuring the change of the longitudinal conductance and the lateral voltage within frameworks of the SNS prepared in the Hall geometry. The THz resonance response from living bio-tissue under the THz radiation is also applied to the definition of oncological diseases. The results obtained from the basis of the express diagnostics in practical medicine.

The experimental data of the optical and electric features of the silicon nanosandwiches obtained by silicon planar technology in the frameworks of the Hall geometry are presented. Silicon nanosandwiches represent the ultra-shallow silicon quantum wells of 2nm wide that are confined by δ-barriers heavily doped with boron, which appear to be used as the phase invertors and modulators of optical THz spectra and electric signals. The negative-U dipole boron centers formation, which appear to confine the edge channels, results in the effective mass dropping and corresponding reduction of the electron-electron interaction thereby giving rise to the macroscopic quantum phenomena at high temperatures up to room temperature. The modulation phase shift of the THz electroluminescence spectrum and phase control of the longitudinal conductance are observed by changing either the magnitude of the source-drain current or the voltage applied to the external gates of the silicon nanosandwiches within the quantum Faraday effect.

The circularly polarized electroluminescence (CPEL) from silicon nanostructures which are the p-type ultra-narrow silicon quantum well (Si-QW) confined by {\delta}-barriers heavily doped with boron, 5 10^21 cm^-3, is under study as a function of temperature and excitation levels. The CPEL dependences on the forward current and temperature show the circularly polarized light emission which appears to be caused by the exciton recombination through the negative-U dipole boron centers at the Si-QW {\delta}-barriers interface.

Studies of infrared induced emission from the silicon quantum wires, which is due to the formation of a correlation gap in the DOS of degenerate hole gas, are presented. The quantum wires of this art are created by electrostatic confining potential inside ultra-shallow p + n junctions which are realized using controlled surface injection of self-interstitials and vacancies in the process of non-equilibrium boron diffusion.

We present the findings of spin‐dependent single‐hole and pair‐hole transport across the p‐type high mobility silicon quantum well (Si‐QW) confined by the superconductor delta‐barriers on the n‐type Si (100) surface. The oscillations of the conductance in normal state and the zero‐resistance supercurrent in superconductor state as a function of the bias voltage are found to be correlated by on‐ and off‐resonance tuning the two‐dimensional subbands of holes with the Fermi energy in the superconductor barriers.

Non-equilibrium impurity diffusion of dopants has been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the boron/phosphorus diffusion process, it was possible to obtain, for the first time, quantum-size diffusion profiles and p-n junctions with dimensions that could be controlled over the 10-220 AA range.