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Abstract We have investigated current-current correlations in a cross-shaped conductor made of graphene. The mean free path of charge carriers is on the order of the ribbon width which leads to a hybrid conductor where there is diffusive transport in the device arms while the central connection region displays near ballistic transport. Our data on auto and cross correlations deviate from the predictions of Landauer-Büttiker theory, and agreement can be obtained only by taking into account contributions from non-thermal electron distributions at the inlets to the semiballistic center, in which the partition noise becomes strongly modified. The experimental results display distinct Hanbury – Brown and Twiss (HBT) exchange correlations, the strength of which is boosted by the non-equilibrium occupation-number fluctuations internal to this hybrid conductor. Our work demonstrates that variation in electron coherence along atomically-thin, two-dimensional conductors has significant implications on their noise and cross correlation properties.

The electrodynamics of topological insulators has been predicted to show a new magnetoelectric term, but this hasn’t been observed. Here, Dziomet al. observe a universal Faraday rotation angle equal to the fine structure constant, evidencing the so-called topological magnetoelectric effect.

A material weakly linking two superconductors may itself exhibit superconductivity whilst its material properties strongly influence the nature of the supercurrent. Here, the authors identify a supercurrent with p-wave symmetry in such a Josephson junction made of topologically non-trivial material.

Here, we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)_{2}Te_{3}. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight into the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bear a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases.

Frequency analysis of the rf emission of oscillating Josephson supercurrent is a powerful passive way of probing properties of topological Josephson junctions. In particular, measurements of the Josephson emission enable the detection of topological gapless Andreev bound states that give rise to emission at half the Josephson frequency f_{J} rather than conventional emission at f_{J}. Here, we report direct measurement of rf emission spectra on Josephson junctions made of HgTe-based gate-tunable topological weak links. The emission spectra exhibit a clear signal at half the Josephson frequency f_{J}/2. The linewidths of emission lines indicate a coherence time of 0.3–4 ns for the f_{J}/2 line, much shorter than for the f_{J} line (3–4 ns). These observations strongly point towards the presence of topological gapless Andreev bound states and pave the way for a future HgTe-based platform for topological quantum computation.

We have observed thermal gating, i.e. electrostatic gating induced by hot electrons. The effect occurs in a device consisting of two capacitively coupled quantum dots. The double dot system is coupled to a hot electron reservoir on one side (QD1), while the conductance of the second dot (QD2) is monitored. When a bias across QD2 is applied we observe a current which is strongly dependent on the temperature of the heat reservoir. This current can be either enhanced or suppressed, depending on the relative energetic alignment of the QD levels. Thus, the system can be used to control a charge current by hot electrons.

We have experimentally studied the diffusion thermopower of a serial double quantum dot, defined electrostatically in a GaAs/AlGaAs heterostructure. We present the thermopower stability diagram for a temperature difference Δ T = (20 ± 10) mK across the device and find a maximum thermovoltage signal of several μ V in the vicinity of the triple points. Along a constant energy axis in this regime, the data show a characteristic pattern which is in agreement with Mott's relation and can be well understood within a model of sequential transport.

HgTe/Hg0.3Cd0.7Te(0 0 1) quantum well structures fabricated with a Si–O–N insulator layer and an Au top gate electrode exhibit hysteresis effects in their gate-voltage dependent carrier density and thus a nonlinear variation of the Rashba spin–orbit splitting energy (ΔR). Charging and discharging of states at the semiconductor insulator interface has been found to be responsible for this effect. The quantitative agreement with a simple capacitor model has been used to identify the maximum hysteresis-free gate-voltage range. A nearly linear variation of ΔR with applied gate voltage has been observed in this range. [ABSTRACT FROM AUTHOR]

We study nanoscale morphology of PbTe/CdTe multilayer heterostuctures grown by molecular beam epitaxy on hybrid GaAs/CdTe (100) substrates. Nominally, the structures consist of 25 repetitions of subsequently deposited CdTe and PbTe layers with comparable thicknesses of 21 and 8 nm, respectively. However, the morphology of the resulting structures crucially depends on the growth temperature. The two-dimensional layered, superlattice-like character of the structures remains preserved only when grown at low substrate temperatures, such as 230 °C. The samples grown at the slightly elevated temperature of 270 °C undergo a morphological transformation to structures consisting of CdTe and PbTe pillars and columns oriented perpendicular to the substrate. Although the pillar-like objects are of various shapes and dimensions these structures exhibit exceptionally strong photoluminescence in the near infrared spectral region. At the higher growth temperature of 310 °C, PbTe and CdTe separate completely forming thick layers oriented longitudinally to the substrate plane. The observed topological transformations are driven by thermally activated atomic diffusion in the solid state phase. The solid state phase remains fully coherent during the processes. The observed topological transitions leading to the material separation in PbTe/CdTe system could be regarded as an analog of spinodal decomposition of an immiscible solid state solution and thus they can be qualitatively described by the Cahn–Hillard model as proposed by Groiss et al (2014 APL Mater.2 012105). [ABSTRACT FROM AUTHOR]

We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model. [ABSTRACT FROM AUTHOR]

The extent of the depletion region at an n-ZnSe/GaAs heterointerface in MBE grown epilayers has been investigated by thickness-dependent Hall measurements. Exceptionally large depletion widths of up to 110 nm have been found on the ZnSe side. The depletion cannot be caused by charge transfer or interface states alone, but is attributed to compensation due to large scale atomic interdiffusion across the heterointerface. A II-VI buffer layer structure is demonstrated to shield the effects of the depletion from sensitive device layers grown on top, and to prevent parallel conduction by lateral and vertical transport through the substrate and the lower-lying buffer layers. [ABSTRACT FROM AUTHOR]