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Today's micro- and nano-fabrication is essentially two-dimensional, with very limited possibilities of accessing the third dimension. The most viable way to mass-fabricate functional structures at the nano-scale, such as electronics or MEMS, with equal feature sizes in all directions, is by three-dimensional self-assembly. Up to now, three-dimensional self-assembly has mainly been restricted to crystals of polymer spheres. We report on two- and three-dimensional self-assembly of silicon cubes, levitated in a paramagnetic fluid. We demonstrate the benefits of templating and study the effect of a change in hydrophilicity of the cubes. These experiments bring us one step closer to three-dimensional self-assembly of anisotropic, semiconducting units, which is a crucial milestone in overcoming the scaling limits imposed by contemporary 2D microfabrication.

The mechanical properties of phase change materials alter when the phase is transformed. In this paper, we report on experiments that determine the change in crucial parameters such as Young's modulus and residual stress for two of the most widely employed compositions of phase change films, Ge1Sb2Te4 and Ge2Sb2Te5, using an accurate microcantilever methodology. The results support understanding of the exact mechanisms that account for the phase transition, especially with regard to stress, which leads to drift in non-volatile data storage. Moreover, detailed information on the change in mechanical properties will enable the design of novel low-power nonvolatile MEMS.

In this paper we present a method to deposit thin films of bismuth with sub-nanometer surface roughness for application to diamagnetic levitation. Evaporated films of bismuth have a high surface roughness with peak to peak values in excess of 100 nm and average values on the order of 20 nm. We expose the smooth backside of the films using a template stripping method, resulting in a great reduction of the average surface roughness, to 0.8 nm. Atomic force microscope and X-ray diffraction measurements show that the films have a polycrystalline texture with preferential c-axis orientation. On the back side of the film, fine grains are grouped into larger clusters. Cantilever resonance shift measurements indicate that the Young's modulus of the films is on the order of 20 GPa.

Three dimensional photonic band gap crystals with a cubic diamond-like symmetry are fabricated. These so-called inverse-woodpile nanostructures consist of two perpendicular sets of pores in single-crystal silicon wafers and are made by means of complementary metal oxide–semiconductor (CMOS)-compatible methods. Both sets of pores have high aspect ratios and are made by deep reactive-ion etching. The mask for the first set of pores is defined in chromium by means of deep UV scan-and-step technology. The mask for the second set of pores is patterned using an ion beam and carefully placed at an angle of 90° with an alignment precision of better than 30 nm. Crystals are made with pore radii between 135–186 nm with lattice parameters a = 686 and c = 488 nm such that a/c = √2; hence the structure is cubic. The crystals are characterized using scanning electron microscopy and X-ray diffraction. By milling away slices of crystal, the pores are analyzed in detail in both directions regarding depth, radius, tapering, shape, and alignment. Using optical reflectivity it is demonstrated that the crystals have broad reflectivity peaks in the near-infrared frequency range, which includes the telecommunication range. The strong reflectivity confirms the high quality of the photonic crystals. Furthermore the width of the reflectivity peaks agrees well with gaps in calculated photonic band structures.

This work presents a MEMS displacement sensor based on the conductive heat transfer of a resistively heated silicon structure towards an actuated stage parallel to the structure. This differential sensor can be easily incorporated into a silicon-on-insulator-based process, and fabricated within the same mask as electrostatic actuators and flexure-based stages. We discuss a lumped capacitance model to optimize the sensor sensitivity as a function of the doping concentration, the operating temperature, the heater length and width. We demonstrate various sensor designs. The typical sensor resolution is 2 nm within a bandwidth of 25 Hz at a full scale range of 110 µm.

We describe an experimental method to recover a single, deterministically fabricated nanostructure in various experimental instruments without the use of artificially fabricated markers, with the aim to study photonic structures. Therefore, a detailed map of the spatial surroundings of the nanostructure is made during the fabrication of the structure. These maps are made using a series of micrographs with successively decreasing magnifications. The graphs reveal intrinsic and characteristic geometric features that can subsequently be used in different setups to act as markers. As an illustration, we probe surface cavities with radii of 65 nm on a silica opal photonic crystal with various setups: a focused ion beam workstation; a scanning electron microscope (SEM); a wide field optical microscope and a confocal microscope. We use cross-correlation techniques to recover a small area imaged with the SEM in a large area photographed with the optical microscope, which provides a possible avenue to automatic searching. We show how both structural and optical reflectivity data can be obtained from one and the same nanostructure. Since our approach does not use artificial grids or markers, it is of particular interest for samples whose structure is not known a priori, like samples created solely by self-assembly. In addition, our method is not restricted to conducting samples.

Near-infrared emissive lanthanide complexes were synthesized with covalently attached sensitizers that absorb in the visible. This functionalization was designed such that the sensitizer is in close proximity to the lanthanide ion, which is a prerequisite for efficient energy transfer from the excited sensitizer to the lanthanide ion. The sensitizers used were fluorescein, eosin, and erythrosin, which were linked via a -alanine spacer to the polydentate chelate. The sensitizers were chosen because they absorb visible light and are structurally very similar, but the intrinsic intersystem crossing quantum yields of the sensitizers vary significantly, because of the presence of the heavy atoms (bromine in eosin and iodine in erythrosin). It was expected that an intrinsic high intersystem crossing would be beneficial in the sensitization process, because energy transfer occurs through the triplet state of sensitizers. However, because of the enhanced intersystem crossing of the sensitizers by the nearby heavy and paramagnetic lanthanide ions, these intrinsic differences were largely diminished. It was even found that fluorescein acts as a more efficient sensitizer for the NIR emission than eosin and erythrosin. The donating triplet state of fluorescein is higher in energy than that of eosin and erythrosin, resulting in less energy back transfer and therefore in a higher efficiency of sensitized emission. This and considerations of selection rules for energy transfer to the lanthanide ions made it possible to distinguish the 4F9/2 level of Nd3+ as the main acceptor channel for energy transfer. In the Er3+ complexes, the enhancement in intersystem crossing was lower in the eosin and erythrosin complexes than in the fluorescein complex, which was concluded from the remaining complex fluorescence. Furthermore, it is tentatively concluded that additional pathways other than those allowed in Dexter energy transfer play a role in the sensitization of Er3+. In the Yb3+ complexes, the higher efficiency of sensitization by fluorescein is due to the enhanced intersystem crossing that is larger in the fluorescein complex than in the eosin or erythrosin complex.

We theoretically investigate the design of cavities in a three-dimensional (3D) inverse woodpile photonic crystal. This class of cubic diamondlike crystals has a very broad photonic band gap and consists of two perpendicular arrays of pores with a rectangular structure. The point defect that acts as a cavity is centered on the intersection of two intersecting perpendicular pores with a radius that differs from the ones in the bulk of the crystal. We have performed supercell band structure calculations with up to 5×5×5 unit cells. We find that up to five isolated and dispersionless bands appear within the 3D photonic band gap. For each isolated band, the electric-field energy is localized in a volume centered on the point defect, hence the point defect acts as a 3D photonic band gap cavity. The mode volume of the cavities resonances is as small as 0.8 λ 3 (resonance wavelength cubed), indicating a strong confinement of the light. By varying the radius of the defect pores we found that only donorlike resonances appear for smaller defect radius, whereas no acceptorlike resonances appear for greater defect radius. From a 3D plot of the distribution of the electric-field energy density we conclude that peaks of energy are found in sharp edges situated at the point defect, similar to how electrons collect at such features. This is different from what is observed for cavities in noninverted woodpile structures. Since inverse woodpile crystals can be fabricated from silicon by CMOS-compatible means, we project that single cavities and even cavity arrays can be realized, for wavelength ranges compatible with telecommunication windows in the near infrared.

Photonic crystals control light propagation at a fundamental level [1]. Photonic crystals are ordered composite materials with a spatially varying dielectric constant that has a periodicity of the order of the wavelength of light. Frequency gaps emerge for which light cannot propagate inside such structure due to Bragg diffraction. These frequency gaps appear in experiments as stopbands. We have investigated stopbands in directions of high symmetry for two-dimensional photonic crystals. Surprisingly, we find a stopband below the first order Bragg condition. This result is valid not only for photonic crystals, but for wave propagation in periodic media in general. This has implications for crystallography, scattering of phonons and band gap formation.

We investigate the diffraction conditions and associated formation of stop gaps for waves in crystals with different Bravais lattices. We identify a prominent stop gap in high-symmetry directions that occurs at a frequency below the ubiquitous first-order Bragg condition. This sub-Bragg-diffraction condition is demonstrated by reflectance spectroscopy on two-dimensional photonic crystals with a centered rectangular lattice, revealing prominent diffraction peaks for both the sub-Bragg and first-order Bragg conditions. These results have implications for wave propagation in 2 of the 5 two-dimensional Bravais lattices and 7 out of 14 three-dimensional Bravais lattices, such as centered rectangular, triangular, hexagonal, and body-centered cubic.

We report on the fabrication of periodic arrays of deep nanopores with high aspect ratios in crystalline silicon. The radii and pitches of the pores were defined in a chromium mask by means of deep UV scan and step technology. The pores were etched with a reactive ion etching process with SF(6), optimized for the formation of deep nanopores. We have realized structures with pitches between 440 and 750 nm, pore diameters between 310 and 515 nm, and depth to diameter aspect ratios up to 16. To the best of our knowledge, this is the highest aspect ratio ever reported for arrays of nanopores in silicon made with a reactive ion etching process. Our experimental results show that the etching rate of the nanopores is aspect-ratio-dependent, and is mostly influenced by the angular distribution of the etching ions. Furthermore we show both experimentally and theoretically that, for sub-micrometer structures, reducing the sidewall erosion is the best way to maximize the aspect ratio of the pores. Our structures have potential applications in chemical sensors, in the control of liquid wetting of surfaces, and as capacitors in high-frequency electronics. We demonstrate by means of optical reflectivity that our high-quality structures are very well suited as photonic crystals. Since the process studied is compatible with existing CMOS semiconductor fabrication, it allows for the incorporation of the etched arrays in silicon chips.

The Young’s modulus of thin films can be determined by deposition on a micronsized Si cantilever and measuring the resonance frequency before and after deposition. The accuracy of the method depends strongly on the initial determination of the mechanical properties and dimensions of the cantilever. We discuss the orientation of the cantilever with respect to the Si crystal, and the inevitable undercut of the cantilever caused by process inaccuracies. By finite element modelling we show that the Young’s modulus should be used instead of the analytical plate modulus approximation for the effective Young’s modulus of Si cantilevers used in this work for both the 1 0 0 and 1 1 0 crystal orientation. Cantilever undercut can be corrected by variation of the cantilever length. As an example, the Young’s modulus of PbZr0.52Ti0.48O3 (PZT) thin films deposited by pulsed laser deposition (PLD) was determined to be 99 GPa, with 1.4 GPa standard error.

We determined the Young’s modulus of pulsed laser deposited epitaxially grown PbZr0.52Ti0.48O3 (PZT) thin films on microcantilevers by measuring the difference in cantilever resonance frequency before and after deposition. By carefully optimizing the accuracy of this technique, we were able to show that the Young’s modulus of PZT thin films deposited on silicon is dependent on the in-plane orientation, by using cantilevers oriented along the 1 1 0 and 1 0 0 silicon directions. Deposition of thin films on cantilevers affects their flexural rigidity and increases their mass, which results in a change in the resonance frequency. An analytical relation was developed to determine the effective Young’s modulus of the PZT thin films from the shift in the resonance frequency of the cantilevers, measured both before and after the deposition. In addition, the appropriate effective Young’s modulus valid for our cantilevers’ dimensions was used in the calculations that were determined by a combined analytical and finite-element (FE) simulations approach. We took extra care to eliminate the errors in the determination of the effective Young’s modulus of the PZT thin film, by accurately determining the dimensions of the cantilevers and by measuring many cantilevers of different lengths. Over-etching during the release of cantilevers from the handle wafer caused an undercut. Since this undercut cannot be avoided, the effective length was determined and used in the calculations. The Young’s modulus of PZT, deposited by pulsed laser deposition, was determined to be 103.0 GPa with a standard error of ± 1.4 GPa for the 1 1 0 crystal direction of silicon. For the 1 0 0 silicon direction, we measured 95.2 GPa with a standard error of ± 2.0 GPa.

We have studied the reflectivity of CMOS-compatible three-dimensional silicon inverse woodpile photonic crystals at near-infrared frequencies. Polarization-resolved reflectivity spectra were obtained from two orthogonal crystal surfaces corresponding to 1.88 pi sr solid angle. The spectra reveal broad peaks with high reflectivity up to 67 % that are independent of the spatial position on the crystals. The spectrally overlapping reflectivity peaks for all directions and polarizations form the signature of a broad photonic band gap with a relative bandwidth up to 16 %. This signature is supported with stopgaps in plane wave bandstructure calculations and with the frequency region of the expected band gap., Comment: 9 pages, 5 figures

Three-dimensional photonic crystals radically control propagation and emission of light [1, 2]. Photonic crystals are ordered composite materials with a spatially varying dielectric constant that has a periodicity of the order of the wavelength of light. In specific three-dimensional crystals, a common frequency range for all polarizations is formed for which light is not allowed to propagate in any direction, called the photonic band gap. It is an outstanding challenge to create these crystals and experimentally demonstrate the photonic band gap.

Recently, a silicon micromachining method to produce tetrahedral silicon particles was discovered. In this report we determine, using band structure calculations, the optical properties of diamond-lattice photonic crystals when assembled from such particles. We show that crystal structures built from silicon tetrahedra are expected to display small stop gaps. Wide photonic band gaps appear when truncated tetrahedral particles are used to build the photonic crystals. With truncated tetrahedral particles a band gap with a width of 23.6% can be achieved, which is more than twice as wide compared to band gaps in self-assembled diamond-lattices of hard-spheres. The width of the band gap is insensitive to small deviations from the optimal amount of truncation. This work paves the way to a novel class of silicon diamond-lattice band gap crystals that can be obtained through self-assembly. Such a self-assembly approach would allow for easy integration of these highly photonic crystals in existing silicon microfluidic and -electronic systems., Comment: Improvements to the text, changed equation 3, added reference 34

The fabrication of three-dimensional inverse woodpile photonic crystals is highly desirable because of their predicted large photonic band gap, their conceptual ease of fabrication, and their robustness to withstand deviations from the ideal geometry that are intrinsic to nanofabrication. In this thesis, several fabrication methods were investigated to obtain three-dimensional inverse woodpile photonic crystals. Preferably, the entire process is compatible with methods used in the complementary metal oxide semiconductor (CMOS) industry to allow the incorporation of the photonic crystals in silicon integrated circuits. The e�ects of fabrication induced deviations on the photonic band gap of the structures were quanti�ed. Furthermore, we have reported a new method to obtain material cavities that will act as optical cavities in opal photonic crystals. Although the photonic band gap in inverse woodpile crystals is generally robust to disorder, it is sensitive to tapering of the pores. Nonetheless, within the limits of the fabrication methods, the fabricated crystals are expected to remain strongly photonic. In addition, a di�erent crystal geometry was found that yields a slightly larger band gap. By changing the lithographic processes in our fabrication scheme, obtaining this crystal geometry is within reach.

We present a new method of realizing single nanocavities in individual colloidal particles on the surface of silicon dioxide artificial opals using a focused ion beam milling technique. We show that both the radius and the position of the nanocavity can be controlled with nanometre precision, to radii as small as 40 nm. The relation between the defect size and the milling time has been established. We confirmed that milling not only occurs on the surface of the spheres, but into and through them as well. We also show that an array of nanocavities can be fashioned. Structurally modified colloids have interesting potential applications in nanolithography, as well as in chemical sensing and solar cells, and as photonic crystal cavities.

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The authors present a method to pattern etch masks for arbitrary nano- and microstructures on different, inclined planes of a sample. Our method allows standard CMOS fabrication techniques to be used in different inclined planes; thus yielding three-dimensional structures with a network topology. The method involves processing of the sample in a first plane, followed by mounting the prepared sample in a specially designed silicon holder wafer such that the second, inclined plane is exposed to continued processing. As a proof of principle we demonstrate the fabrication of a patterned chromium etch mask for three-dimensional photonic crystals in silicon. The etch mask is made on the 90° inclined plane of a silicon sample that already contains high aspect ratio nanopores. The etch mask is carefully aligned with respect to these pores, with a high translational accuracy of

In this report the effects of unintended deviations from ideal inverse woodpile photonic crystals on the band gap are discussed. These deviations occur during the nanofabrication of the crystal. By computational analyses it is shown that the band gap of this type of crystal is robust to most types of deviations that relate to the radii, position and angular alignment of the pores. However, the photonic band gap is very sensitive to tapering of the pores, i.e., conically shaped pores instead of cylindrical pores. To obtain three-dimensional inverse woodpile photonic crystals with a large volume, our work shows that with modern fabrication performances, tapering contributes most significantly to a reduction in the photonic strength of inverse woodpile photonic crystals.