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Direct printing of conjugated polymer thin‐film transistors enables the fabrication of deformable devices with low cost, high throughput, and large area. However, a relatively poor device performance of printed devices remains a major obstacle to their application in high‐end display backplanes and integrated circuits. In this study, high‐performance and highly stackable printed organic transistors is developed, arrays, and circuits using a near‐amorphous polymer, indacenodithiophene‐co‐benzothiadiazole (IDT‐BT). The printed devices exhibited high saturation mobility (>1 cm2 V−1 s−1), high on/off ratio (>107), and low subthreshold slope (245 mV dec−1). In addition, 16 × 16 printed IDT‐BT arrays achieved 100% fabrication yield, with excellent device‐to‐device uniformity and low variations of mobility (9.55%) and threshold voltage (4.51%), and good operational and environmental stability (>365 days). Furthermore, five stacked 3D transistors are demonstrated with an excellent 3D uniformity without compromising device performance due to a low required thermal budget for processing amorphous IDT‐BT. Finally, a new concept of 3D universal logic gate with high voltage gain (33.91 V/V) and record density (100 printed transistors per cm2) is proposed and fabricated, which is relevant for the commercialization of low‐cost printed display backplanes and high‐density integrated circuits based on highly processable polymeric semiconductors. [ABSTRACT FROM AUTHOR]

Due to their inherent flexibility, solution-processable conjugated polymers are increasingly being considered for the cost-effective production of thin-film semiconductor devices used in Internet of Everything (IoE) applications. With considerable improvements in charge carrier mobilities, the final challenge impeding the commercialization of conjugated polymers may be improving their environmental and electrical stabilities. Recent studies have improved the stability of computing devices (i.e., transistors) by eliminating interface traps and water molecules within conjugated polymers. However, the stability issue of Schottky diodes, which play a crucial role in configuring thin-film IoE devices used in wireless communication and energy harvesting, has been largely overlooked. This study reveals that aluminum, which is commonly used as a cathode metal in polymer Schottky diodes, creates a nonstoichiometric effect when deposited on conjugated polymers, thereby leading to the formation of charge traps over time, which reduces the rectification ratio of the Schottky diodes and induces a significant bias stress effect during operation. To address this issue, we introduce a zinc-oxide sacrificial interlayer between the conjugated polymer and cathode. This interlayer effectively eliminates the penetrated Al metal or ionized Al-induced nonstoichiometric effect without reducing the charge injection efficiency, achieving exceptional environmental and operational stability. The printed polymer Schottky diodes demonstrate consistent rectifying operation at 13.56 MHz for several months with negligible changes in electrical characteristics. [ABSTRACT FROM AUTHOR]

Single wall carbon nanotubes (SWNT) have been a significant research topic as active layers for thin film transistors (TFTs) due to their high charge carrier mobility beyond that of crystalline silicon. In this study, we report an effective approach to achieve a very high field-effect mobility and on/off ratio for solution processed semiconducting SWNT TFTs, by selective doping through contact with a thin ferric chloride (FeCl3) dopant layer. The semiconducting layer is formed by a double spin coating of the highly purified (>99%) high pressure carbon mono oxide (HiPCO) SWNT sorted by wrapping of poly (3-dodecylthiophene-2,5-diyl) (P3DDT). In order to achieve effective hole injection from the top Au source electrode without increasing the off-state drain current, less purified (98-99%) SWNTs produced by the plasma discharge process sorted by wrapping of poly (9,9-di-n-dodecylfluorene) (PFDD) are formed on the top of HiPCO film. Significantly improved TFT performance is achieved by the insertion of a few nanometers of a FeCl3 dopant layer at the semiconductor-contact interface. A significant high hole field-effect of 48.35 ± 3.11 cm2V−1s−1 (bare: 6.18 ± 0.87 cm2V−1s−1) with a reasonable on/off current ratio of 105, and low off current of ∼80 pA, are obtained by controlling the concentration of FeCl3 dopant (thickness = 1.5 nm) at the contact. Mobility is improved further at 2.5 nm thickness of the FeCl3 dopant layer resulting in a hole mobility of 177 ± 13.2 cm2 V−1s−1, an on/off ratio of 7.4 × 103, and off state current of 1.2 × 10−9 A. [ABSTRACT FROM AUTHOR]

An increasing volume of research has examined issues related to working abroad, but studies focusing on low-skilled migrant workers are lagging. Relying on intercultural interaction and social exchange views as overarching frames, we examined determinants of low-skilled immigrant workers' workplace satisfaction. With a sample of 640 migrant workers from eight countries, we specifically examined and compared the effects of cultural and workplace factors. Results showed that intercultural negativity factors such as intercultural rejection sensitivity and intercultural interaction difficulty reduced the workplace satisfaction of low-skilled migrant workers, while social exchange factors such as supervisory support and distributive justice perception boosted their workplace satisfaction. We further found that workplace factors showed significantly stronger effects than cultural factors on their workplace satisfaction. Finally, we examined interaction effects between cultural and workplace factors, and found that the positive effect of supervisory support was greater for those who perceived more cultural difficulty than for those perceiving less cultural difficulty. Theoretical and practical implications are included. [ABSTRACT FROM AUTHOR]